MAX1180 [MAXIM]
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC with Internal Reference and Parallel Outputs; 双10位，105Msps ， + 3.3V ，低功耗ADC ，内置电压基准及并行输出
| 型号： | MAX1180 |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC with Internal Reference and Parallel Outputs |
| 文件： | 总20页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-2097; Rev 0; 7/01
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
General Description
Features
The MAX1180 is a +3.3V, dual 10-bit, analog-to-digital
converter (ADC) featuring fully-differential wideband
track-and-hold (T/H) inputs, driving two pipelined, nine-
stage ADCs. The MAX1180 is optimized for low-power,
high-dynamic performance applications in imaging,
instrumentation, and digital communication applica-
tions. The MAX1180 operates from a single +2.7V to
+3.6V supply, consuming only 413mW, while delivering
a typical signal-to-noise ratio (SNR) of 58.5dB at an
input frequency of 20MHz and a sampling rate of
105Msps. The T/H driven input stages incorporate
400MHz (-3dB) input amplifiers. The converters may
also be operated with single-ended inputs. In addition
to low operating power, the MAX1180 features a 2.8mA
sleep mode, as well as a 1µA power-down mode to
conserve power during idle periods.
ꢀ Single +3.3V Operation
ꢀ Excellent Dynamic Performance:
58.5dB SNR at f = 20MHz
IN
72dB SFDR at f = 20MHz
IN
ꢀ SNR Flat within 1dB for f = 202MHz to 100MHz
IN
ꢀ Low Power:
125mA (Normal Operation)
2.8mA (Sleep Mode)
1µA (Shutdown Mode)
ꢀ 0.02dB Gain and 0.25° Phase Matching (typ)
ꢀ Wide 1Vpꢀp Differential Analog Input Voltage
Range
ꢀ 400MHz, ꢀ3dB Input Bandwidth
ꢀ OnꢀChip +2.048V Precision Bandgap Reference
An internal +2.048V precision bandgap reference sets
the full-scale range of the ADC. A flexible reference
structure allows the use of the internal or external
reference, if desired for applications requiring
increased accuracy or a different input voltage range.
ꢀ UserꢀSelectable Output Format—Two’s
Complement or Offset Binary
ꢀ 48ꢀPin TQFP Package with Exposed Pad for
Improved Thermal Dissipation
The MAX1180 features parallel, CMOS-compatible
three-state outputs. The digital output format is set to
two’s complement or straight offset binary through a
single control pin. The device provides for a separate
output power supply of +1.7V to +3.6V for flexible inter-
Ordering Information
PART
TEMP. RANGE
PIN-PACKAGE
✕
facing. The MAX1180 is available in a 7mm 7mm, 48-
MAX1180ECM
-40°C to +85°C
48 TQFP-EP
pin TQFP package, and is specified for the extended
industrial (-40°C to +85°C) temperature range.
Pin Configuration
Pin-compatible higher and lower speed versions of the
MAX1180 are also available. Please refer to the
MAX1181 data sheet for 80Msps, the MAX1182 data
sheet for 65Msps, the MAX1183 data sheet for 40Msps,
and the MAX1184 data sheet for 20Msps. In addition to
these speed grades, this family includes a 20Msps mul-
tiplexed output version (MAX1185), for which digital
data is presented time-interleaved on a single, parallel
10-bit output port.
COM
1
2
36 D1A
35 D0A
34 OGND
V
DD
GND
INA+
INA-
3
4
33 OV
32 OV
DD
DD
5
Applications
V
6
31 OGND
30 D0B
29 D1B
DD
MAX1180
GND
INB-
INB+
GND
7
High Resolution Imaging
I/Q Channel Digitization
Multichannel IF Undersampling
Instrumentation
8
D2B
D3B
D4B
D5B
9
28
27
26
25
10
11
12
V
DD
CLK
Video Application
Functional Diagram appears at end of data sheet.
48 TQFP-EP
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
ABSOLUTE MAXIMUM RATINGS
V
, OV
to GND ...............................................-0.3V to +3.6V
Continuous Power Dissipation (T = +70°C)
DD
DD
A
OGND to GND.......................................................-0.3V to +0.3V
48-Pin TQFP (derate 12.5mW/°C above +70°C).........1000mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
INA+, INA-, INB+, INB- to GND ...............................-0.3V to V
REFIN, REFOUT, REFP, REFN, CLK,
DD
COM to GND ............................................-0.3V to (V + 0.3V)
DD
OE, PD, SLEEP, T/B, D9A–D0A,
D9B–D0B to OGND ................................-0.3V to (OV + 0.3V)
DD
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
= +3.3V, OV
= +2.5V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN
DD
DD
through a 10kΩ resistor, V = 2V
(differential w.r.t. COM), C = 10pF at digital outputs (Note 5), f
= 105.263MHz, T = T
to
IN
p-p
L
CLK
A
MIN
T
MAX
, unless otherwise noted. Typical values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC ACCURACY
Resolution
10
-1
Bits
LSB
Integral Nonlinearity
Differential Nonlinearity
Offset Error
INL
f
f
= 7.47MHz
0.75
0.4
2.5
+1.5
1.7
2
IN
DNL
= 7.47MHz, no missing codes guaranteed
LSB
IN
<
1
% FS
% FS
Gain Error
0
ANALOG INPUT
Differential Input Voltage Range
V
Differential or single-ended inputs
Switched capacitor load
1.0
/2
V
V
DIFF
Common-Mode Input Voltage
Range
V
DD
V
CM
0.5
Input Resistance
R
20
5
kΩ
IN
IN
Input Capacitance
C
pF
CONVERSION RATE
Maximum Clock Frequency
f
105
MHz
CLK
Clock
Cycles
Data Latency
5
DYNAMIC CHARACTERISTICS (f
= 105.263MHz, 4096-point FFT)
CLK
f
f
f
f
f
f
f
f
f
f
f
f
= 7.47MHz, T = +25°C
59
INA or B
INA or B
INA or B
INA or B
INA or B
INA or B
INA or B
INA or B
INA or B
INA or B
INA or B
INA or B
A
Signal-to-Noise Ratio
SNR
= 20MHz, T = +25°C
55
54.7
60
58.5
58
dB
dB
A
= 50.078MHz (Note 1)
= 7.47MHz, T = +25°C
58.2
58.1
57.6
72
A
Signal-to-Noise and Distortion
(up to 5th harmonic)
SINAD
SFDR
HD3
= 20MHz, T = +25°C
A
= 50.078MHz (Note 1)
= 7.47MHz, T = +25°C
A
Spurious-Free Dynamic
Range
= 20MHz, T = +25°C
72
dBc
dBc
A
= 50.078MHz, (Note 1)
= 7.47MHz
70
-75
-75
-73
Third-Harmonic Distortion
= 20MHz
= 50.078MHz (Note 1)
2
_______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
ELECTRICAL CHARACTERISTICS (continued)
(V
= +3.3V, OV
= +2.5V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN
DD
DD
through a 10kΩ resistor, V = 2V
(differential w.r.t. COM), C = 10pF at digital outputs (Note 5), f
= 105.263MHz, T = T
to
IN
p-p
L
CLK
A
MIN
T
MAX
, unless otherwise noted. Typical values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX UNITS
f
f
= 38.055MHz at -6.5dB FS
= 42.926MHz at -6.5dB FS
INA or B
Intermodulation Distortion
(first five odd-order IMDs)
IMD
-74
dBc
dBc
INA or B
(Note 2)
f
f
f
= 7.47MHz, T = +25°C
-71
-70
-69
500
400
1
INA or B
INA or B
INA or B
A
Total Harmonic Distortion
(first five harmonics)
THD
= 20MHz, T = +25°C
-59
A
= 50.078MHz, (Note 1)
Small-Signal Bandwidth
Full-Power Bandwidth
Aperture Delay
Input at -20dB FS, differential inputs
Input at -0.5dB FS, differential inputs
MHz
MHz
ns
FPBW
t
AD
Aperture Jitter
t
2
ps
RMS
AJ
✕
Overdrive Recovery Time
Differential Gain
For 1.5 full-scale input
2
ns
1
%
Differential Phase
Output Noise
0.25
0.2
degrees
LSB
INA+ = INA- = INB+ = INB- = COM
RMS
INTERNAL REFERENCE
2.048
3%
Reference Output Voltage
REFOUT
V
Reference Temperature
Coefficient
TC
60
ppm/°C
REF
Load Regulation
1.25
mV/mA
BUFFERED EXTERNAL REFERENCE (V
= +2.048V)
REFIN
REFIN Input Voltage
V
2.048
2.162
V
V
REFIN
Positive Reference Output
Voltage
V
REFP
Negative Reference Output
Voltage
V
1.138
V
REFN
Differential Reference Output
Voltage Range
∆V
∆V
= V
- V
REFN
0.98
1.024
>50
5
1.07
V
REF
REF
REFP
REFIN Resistance
R
MΩ
mA
REFIN
Maximum REFP, COM Source
Current
I
I
SOURCE
Maximum REFP, COM Sink
Current
I
-250
µA
SINK
Maximum REFN Source Current
Maximum REFN Sink Current
250
-5
µA
SOURCE
I
mA
SINK
_______________________________________________________________________________________
3
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
ELECTRICAL CHARACTERISTICS (continued)
(V
= +3.3V, OV
= +2.5V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN
DD
DD
through a 10kΩ resistor, V = 2V
(differential w.r.t. COM), C = 10pF at digital outputs (Note 5), f
= 105.263MHz, T = T
to
IN
p-p
L
CLK
A
MIN
T
MAX
, unless otherwise noted. Typical values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
UNBUFFERED EXTERNAL REFERENCE (V
= AGND, reference voltage applied to REFP, REFN, and COM )
REFIN
R
R
Measured between REFP and COM and
REFN and COM
REFP,
REFP, REFN Input Resistance
4
kΩ
V
REFN
Differential Reference Input
Voltage Range
1.024
10%
∆V
∆V
= V
- V
REFP REFN
REF
COM
REFP
REFN
REF
V
/2
DD
10%
COM Input Voltage Range
REFP Input Voltage
V
V
V
V
∆V
+
COM
V
/2
REF
V
∆V
-
/2
COM
REFN Input Voltage
V
V
REF
DIGITAL INPUTS (CLK, PD, OE, SLEEP, T/B)
0.8 x
CLK
V
DD
Input High Threshold
Input Low Threshold
V
V
V
IH
0.8 x
OV
PD, OE, SLEEP, T/B
CLK
DD
0.2 x
V
DD
V
IL
0.2 x
OV
PD, OE, SLEEP, T/B
DD
Input Hysteresis
Input Leakage
V
0.1
5
V
HYST
I
IH
V
V
= OV or V (CLK)
5
5
IH
IL
DD
DD
µA
pF
I
IL
= 0
Input Capacitance
C
IN
DIGITAL OUTPUTS (D9A–D0A, D9B–D0B)
Output Voltage Low
V
I
I
= -200µA
0.2
10
V
V
OL
SINK
OV
- 0.2
DD
Output Voltage High
V
= 200µA
SOURCE
OH
Three-State Leakage Current
Three-State Output Capacitance
POWER REQUIREMENTS
Analog Supply Voltage Range
Output Supply Voltage Range
I
OE = OV
OE = OV
µA
pF
LEAK
DD
C
5
OUT
DD
V
2.7
1.7
3.3
2.5
125
2.8
1
3.6
3.6
155
V
V
DD
OV
DD
Operating, f
Sleep mode
= 20MHz at -0.5dB FS
INA or B
mA
µA
Analog Supply Current
I
VDD
Shutdown, clock idle, PD = OE = OV
15
DD
4
_______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
ELECTRICAL CHARACTERISTICS (continued)
(V
= +3.3V, OV
= +2.5V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN
DD
DD
through a 10kΩ resistor, V = 2V
(differential w.r.t. COM), C = 10pF at digital outputs (Note 5), f
= 105.263MHz, T = T
to
IN
p-p
L
CLK
A
MIN
T
MAX
, unless otherwise noted. Typical values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating, C = 15pF , f
L
-0.5dB FS
= 20MHz at
INA or B
15
mA
Output Supply Current
I
OVDD
Sleep mode
100
2
µA
µA
Shutdown, clock idle, PD = OE = OV
10
DD
Operating, f
= 20MHz at -0.5dB FS
413
9.2
3
511
mW
INA or B
Power Dissipation
PDISS
PSRR
Sleep mode
µW
Shutdown, clock idle, PD = OE = OV
50
8
DD
Offset
Gain
0.2
0.1
mV/V
%/V
Power-Supply Rejection Ratio
TIMING CHARACTERISTICS
CLK Rise to Output Data Valid
t
Figure 3 (Note 3)
Figure 4
5
ns
ns
ns
DO
Output Enable Time
Output Disable Time
t
10
1.5
ENABLE
t
Figure 4
DISABLE
4.75
1.5
CLK Pulse Width High
CLK Pulse Width Low
Wake-Up Time
t
Figure 3, clock period: 9.5ns
Figure 3, clock period: 9.5ns
ns
ns
µs
CH
4.75
1.5
t
CL
Wakeup from sleep mode (Note 4)
Wakeup from shutdown (Note 4)
0.18
1.5
t
WAKE
CHANNEL-TO-CHANNEL MATCHING
Crosstalk
f
f
f
= 20MHz at -0.5dB FS
= 20MHz at -0.5dB FS
= 20MHz at -0.5dB FS
-70
dB
dB
INA or B
INA or B
INA or B
Gain Matching
0.02
0.25
0.2
Phase Matching
degrees
Note 1: SNR, SINAD, THD, SFDR, and HD3 are based on an analog input voltage of -0.5dB FS, referenced to a +1.024V full-scale
input voltage range.
Note 2: Intermodulation distortion is the total power of the intermodulation products relative to the individual carrier. This number is
6dB or better, if referenced to the two-tone envelope.
Note 3: Digital outputs settle to V , V . Parameter guaranteed by design.
IH IL
Note 4: With REFIN driven externally, REFP, COM, and REFN are left floating while powered down.
Note 5: Equivalent dynamic performance is obtainable over full OV
range with reduced C .
DD
L
_______________________________________________________________________________________
5
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Typical Operating Characteristics
(V
= +3.3V, OV
= +2.5V, internal reference, differential input at -0.5dB FS, f
= 105.0005678MHz, C ≈ 10pF. T = +25°C,
DD
DD
CLK L A
unless otherwise noted.)
FFT PLOT CHA (8192-POINT RECORD,
DIFFERENTIAL INPUT)
FFT PLOT CHB (8192-POINT RECORD,
DIFFERENTIAL INPUT)
FFT PLOT CHA (8192-POINT RECORD,
DIFFERENTIAL INPUT)
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
CHA
CHB
CHA
f
f
f
= 6.242099MHz
= 7.523844MHz
= 105.00057MHz
f
f
f
= 6.242099MHz
= 7.523844MHz
= 105.00057MHz
f
f
f
= 20.084947MHz
= 25.006849MHz
= 105.00057MHz
INA
INB
CLK
INA
INB
CLK
INA
INB
CLK
AINA = -0.52dB FS
AINB = -0.48dB FS
AINA = -0.54dB FS
0
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
FFT PLOT CHB (8192-POINT RECORD,
DIFFERENTIAL INPUT)
FFT PLOT CHA (8192-POINT RECORD,
DIFFERENTIAL INPUT)
FFT PLOT CHB (8192-POINT RECORD,
DIFFERENTIAL INPUT)
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
CHB
CHA
CHB
f
f
f
= 20.084947MHz
= 25.006849MHz
= 105.00057MHz
f
f
f
= 52.23259MHz
= 57.050479MHz
= 105.00057MHz
f
f
f
= 52.23259MHz
= 57.050479MHz
= 105.00057MHz
INA
INB
CLK
INA
INB
CLK
INA
INB
CLK
AINA = -0.54dB FS
AINA = -0.47dB FS
AINB = -0.47dB FS
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
TWO-TONE IMD PLOT (8192-POINT
RECORD, DIFFERENTIAL INPUT)
SIGNAL-TO-NOISE RATIO vs.
ANALOG INPUT FREQUENCY
SIGNAL-TO-NOISE + DISTORTION vs.
ANALOG INPUT FREQUENCY
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
60
59
58
57
56
55
54
61
59
57
55
53
f
f
f
= 38.055015MHz
= 41.925886MHz
= 105.00057MHz
DIFFERENTIAL INPUT CONFIGURATION
INA
INB
CLK
DIFFERENTIAL INPUT CONFIGURATION
CHB
CHA
AIN = -6.5dB FS
TWO-TONE
ENVELOPE = -0.51dB FS
CHB
CHA
f
f
IN2
IN1
3RD ORDER
IMD
2ND ORDER
IMD
3RD ORDER
IMD
10
20
30
40
50
60
1
10
100
1
10
100
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
6
_______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Typical Operating Characteristics (continued)
(V
= +3.3V, OV
= +2.5V, internal reference, differential input at -0.5dB FS, f
= 105.0005678MHz, C ≈ 10pF. T = +25°C,
DD
DD
CLK L A
unless otherwise noted.)
TOTAL HARMONIC DISTORTION
vs. ANALOG INPUT FREQUENCY
SPURIOUS-FREE DYNAMIC RANGE
vs. ANALOG INPUT FREQUENCY
FULL-POWER INPUT BANDWIDTH vs.
ANALOG INPUT FREQUENCY, SINGLE-ENDED
-64
-66
-68
-70
76
74
72
70
68
66
64
6
DIFFERENTIAL INPUT CONFIGURATION
DIFFERENTIAL INPUT CONFIGURATION
4
2
CHB
CHA
0
CHA
CHB
-2
-4
-6
-8
-72
-74
1
10
100
1
10
100
1
10
100
1000
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
ANALOG INPUT FREQUENCY (MHz)
SIGNAL-TO-NOISE RATIO vs.
SIGNAL-TO-NOISE + DISTORTION vs.
SMALL-SIGNAL INPUT BANDWIDTH vs.
ANALOG INPUT FREQUENCY, SINGLE-ENDED
INPUT POWER (f = 20.084947MHz)
INPUT POWER (f = 20.084947MHz)
IN
IN
65
60
55
50
45
40
35
65
60
55
50
45
40
35
6
4
2
V
IN
= 100mVp-p
0
-2
-4
-6
-8
-20
-16
-12
-8
-4
0
-20
-16
-12
-8
-4
0
1
10
100
1000
INPUT POWER (dB FS)
INPUT POWER (dB FS)
ANALOG INPUT FREQUENCY (MHz)
INTEGRAL NONLINEARITY
(BEST ENDPOINT FIT)
TOTAL HARMONIC DISTORTION vs.
INPUT POWER (f = 20.084947MHz)
SPURIOUS-FREE DYNAMIC RANGE vs.
INPUT POWER (f = 20.084947MHz)
IN
IN
-55
80
76
72
68
64
60
1.0
0.5
0
-60
-65
-70
-75
-80
-0.5
-1.0
0
128 256 384 512 640 768 896 1024
DIGITAL OUTPUT CODE
-20
-16
-12
-8
-4
0
-20
-16
-12
-8
-4
0
INPUT POWER (dB FS)
INPUT POWER (dB FS)
_______________________________________________________________________________________
7
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Typical Operating Characteristics (continued)
(V
= +3.3V, OV
= +2.5V, internal reference, differential input at -0.5dB FS, f
= 105.0005678MHz, C ≈ 10pF. T = +25°C,
DD
DD
CLK L A
unless otherwise noted.)
GAIN ERROR vs. TEMPERATURE,
OFFSET ERROR vs. TEMPERATURE,
EXTERNAL REFERENCE (V
= +2.048V)
EXTERNAL REFERENCE (V
= +2.048V)
DIFFERENTIAL NONLINEARITY
REFIN
REFIN
0.50
0.25
0
1.0
0.5
0
1.0
0.5
CHB
CHA
CHB
0
-0.5
-1.0
-1.5
CHA
-0.25
-0.50
-0.5
-1.0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
0
128 256 384 512 640 768 896 1024
DIGITAL OUTPUT CODE
TEMPERATURE (°C)
TEMPERATURE (°C)
ANALOG SUPPLY CURRENT
vs. ANALOG SUPPLY VOLTAGE
ANALOG SUPPLY CURRENT
vs. TEMPERATURE
ANALOG POWER-DOWN CURRENT
vs. ANALOG POWER SUPPLY
150
140
130
120
110
100
150
140
130
120
110
100
1.0
0.8
0.6
0.4
0.2
0
OE = PD = OV
DD
2.70 2.85 3.00 3.15 3.30 3.45 3.60
-40
-15
10
35
60
85
2.70 2.85 3.00 3.15 3.30 3.45 3.60
(V)
V
DD
(V)
TEMPERATURE (°C)
V
DD
SFDR, SNR, THD, SINAD
vs. CLOCK DUTY CYCLE
INTERNAL REFERENCE VOLTAGE
vs. ANALOG SUPPLY VOLTAGE
90
80
70
60
50
40
2.050
f
= 20.08495MHz
IN
2.046
2.042
2.038
2.034
2.030
SFDR
THD
SNR
SINAD
40
44
48
52
56
60
2.70 2.85 3.00 3.15 3.30 3.45 3.60
(V)
CLOCK DUTY CYCLE (%)
V
DD
8
_______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Typical Operating Characteristics (continued)
(V
= +3.3V, OV
= +2.5V, internal reference, differential input at -0.5dB FS, f
= 105.0005678MHz, C ≈ 10pF. T = +25°C,
DD
DD
CLK L A
unless otherwise noted.)
INTERNAL REFERENCE VOLTAGE
vs. TEMPERATURE
OUTPUT NOISE HISTOGRAM (DC INPUT)
7000
6000
5000
4000
3000
2000
1000
0
2.065
2.055
2.045
2.035
2.025
2.015
64676
0
607
N-1
252
N+1
0
N-2
N
N+2
-40
-15
10
35
60
85
DIGITAL OUTPUT NOISE
TEMPERATURE (°C)
Pin Description
PIN
NAME
FUNCTION
1
COM
Common-Mode Voltage Input/Output. Bypass to GND with a ≥ 0.1µF capacitor.
Analog Supply Voltage. Bypass to GND with a capacitor combination of 2.2µF in parallel with
0.1µF.
2, 6, 11, 14, 15
V
DD
3, 7, 10, 13, 16
GND
INA+
INA-
INB-
INB+
CLK
Analog Ground
4
5
Channel A Positive Analog Input. For single-ended operation, connect signal source to INA+.
Channel A Negative Analog Input. For single-ended operation, connect INA- to COM.
Channel B Negative Analog Input. For single-ended operation, connect INB- to COM.
Channel B Positive Analog Input. For single-ended operation, connect signal source to INB+.
Converter Clock Input
8
9
12
T/B selects the ADC digital output format.
High: Two’s complement.
Low: Straight offset binary.
17
18
19
20
T/B
SLEEP
PD
Sleep Mode Input.
High: Deactivates the two ADCs, but leaves the reference bias circuit active.
Low: Normal operation.
Power-Down Input.
High: Power-down mode
Low: Normal operation
Output Enable Input.
High: Digital outputs disabled
Low: Digital outputs enabled
OE
_______________________________________________________________________________________
9
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Pin Description (continued)
PIN
21
NAME
D9B
D8B
D7B
D6B
D5B
D4B
D3B
D2B
D1B
D0B
OGND
FUNCTION
Three-State Digital Output, Bit 9 (MSB), Channel B
22
Three-State Digital Output, Bit 8, Channel B
Three-State Digital Output, Bit 7, Channel B
Three-State Digital Output, Bit 6, Channel B
Three-State Digital Output, Bit 5, Channel B
Three-State Digital Output, Bit 4, Channel B
Three-State Digital Output, Bit 3, Channel B
Three-State Digital Output, Bit 2, Channel B
Three-State Digital Output, Bit 1, Channel B
Three-State Digital Output, Bit 0 (LSB), Channel B
Output Driver Ground
23
24
25
26
27
28
29
30
31, 34
Output Driver Supply Voltage. Bypass to OGND with a capacitor combination of 2.2µF in parallel
with 0.1µF.
32, 33
OV
DD
35
36
37
38
39
40
41
42
43
44
D0A
D1A
D2A
D3A
D4A
D5A
D6A
D7A
D8A
D9A
Three-State Digital Output, Bit 0 (LSB), Channel A
Three-State Digital Output, Bit 1, Channel A
Three-State Digital Output, Bit 2, Channel A
Three-State Digital Output, Bit 3, Channel A
Three-State Digital Output, Bit 4, Channel A
Three-State Digital Output, Bit 5, Channel A
Three-State Digital Output, Bit 6, Channel A
Three-State Digital Output, Bit 7, Channel A
Three-State Digital Output, Bit 8, Channel A
Three-State Digital Output, Bit 9 (MSB), Channel A
Internal Reference Voltage Output. May be connected to REFIN through a resistor or a resistor
divider.
45
46
47
48
REFOUT
REFIN
REFP
✕
Reference Input. V
= 2 (V
- V
REFN
).
REFIN
REFP
Bypass to GND with a >1nF capacitor.
Positive Reference Input/Output. Conversion range is (V
Bypass to GND with a > 0.1µF capacitor.
- V
REFN
).
REFP
Negative Reference Input/Output. Conversion range is (V
Bypass to GND with a > 0.1µF capacitor.
- V
REFN
).
REFP
REFN
10 ______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
V
IN
V
IN
V
OUT
V
OUT
x2
x2
Σ
Σ
T/H
T/H
FLASH
ADC
FLASH
ADC
DAC
DAC
1.5 BITS
1.5 BITS
2-BIT FLASH
ADC
2-BIT FLASH
ADC
STAGE 1
STAGE 2
STAGE 8
STAGE 9
STAGE 1
STAGE 2
STAGE 8
STAGE 9
DIGITAL CORRECTION LOGIC
10
DIGITAL CORRECTION LOGIC
10
T/H
T/H
D9A–D0A
D9B–D0B
V
INA
V
INB
V
INA
V
INB
= INPUT VOLTAGE BETWEEN INA+ AND INA- (DIFFERENTIAL OR SINGLE-ENDED)
= INPUT VOLTAGE BETWEEN INB+ AND INB- (DIFFERENTIAL OR SINGLE-ENDED)
Figure 1. Pipelined Architecture—Stage Blocks
(C2a and C2b) through switches S4a and S4b. S2a and
S2b set the common mode for the amplifier input, and
open simultaneously with S1, sampling the input wave-
form. Switches S4a and S4b are then opened before
switches S3a and S3b, connect capacitors C1a and
C1b to the output of the amplifier, and switch S4c is
closed. The resulting differential voltages are held on
capacitors C2a and C2b. The amplifiers are used to
charge capacitors C1a and C1b to the same values
originally held on C2a and C2b. These values are then
presented to the first-stage quantizers and isolate the
pipelines from the fast-changing inputs. The wide input
bandwidth T/H amplifiers allow the MAX1180 to track-
and-sample/hold analog inputs of high frequencies
(> Nyquist). Both ADC inputs (INA+, INB+, INA-, and
INB-) can be driven either differentially or single-ended.
Match the impedance of INA+ and INA-, as well as
INB+ and INB-, and set the common-mode voltage to
Detailed Description
The MAX1180 uses a nine-stage, fully-differential
pipelined architecture (Figure 1), that allows for high-
speed conversion while minimizing power consump-
tion. Samples taken at the inputs move progressively
through the pipeline stages every half clock cycle.
Counting the delay through the output latch, the clock-
cycle latency is five clock cycles.
1.5-bit (two-comparator) flash ADCs convert the held-
input voltages into a digital code. The digital-to-analog
converters (DACs) convert the digitized results back
into analog voltages, which are then subtracted from
the original held-input signals. The resulting error sig-
nals are then multiplied by two and the residues are
passed along to the next pipeline stages where the
process is repeated until the signals have been
processed by all nine stages. Digital error correction
compensates for ADC comparator offsets in each of
these pipeline stages and ensures no missing codes.
midsupply (V /2) for optimum performance.
DD
Analog Inputs and Reference
Input Track-and-Hold (T/H) Circuits
Figure 2 displays a simplified functional diagram of the
input track-and-hold (T/H) circuits in both track-and-
hold mode. In track mode, switches S1, S2a, S2b, S4a,
S4b, S5a and S5b are closed. The fully-differential cir-
cuits sample the input signals onto the two capacitors
Configurations
The full-scale range of the MAX1180 is determined
by the internally generated voltage difference
between REFP (V /2 + V
REFIN
/4) and REFN (V /2 -
DD
DD
REFIN
V
/4).The full-scale range for both on-chip
______________________________________________________________________________________ 11
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
INTERNAL
COM
S5a
BIAS
S2a
C1a
S3a
S4a
S4b
INA+
INA-
OUT
OUT
C2a
C2b
S4c
S1
C1b
S3b
S5b
COM
S2b
INTERNAL
BIAS
CLK
INTERNAL
NONOVERLAPPING
CLOCK SIGNALS
HOLD
HOLD
INTERNAL
BIAS
TRACK
TRACK
COM
S5a
S2a
C1a
S3a
S4a
S4b
INB+
INB-
OUT
OUT
C2a
C2b
S4c
S1
MAX1180
C1b
S3b
S5b
COM
S2b
INTERNAL
BIAS
Figure 2. MAX1180 T/H Amplifiers
ADCs is adjustable through the REFIN pin, which is
provided for this purpose.
• Internal reference mode
• Buffered external reference mode
• Unbuffered external reference mode
REFOUT, REFP, COM (V /2), and REFN are internally
DD
buffered low-impedance outputs.
In the internal reference mode, connect the internal ref-
erence output REFOUT to REFIN through a resistor
(e.g., 10kΩ) or resistor divider, if an application
The MAX1180 provides three modes of reference oper-
ation:
12 ______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
5 CLOCK-CYCLE LATENCY
N
N + 1
N + 2
N + 3
N + 4
N + 5
N + 6
ANALOG INPUT
CLOCK INPUT
t
D0
t
CH
t
CL
DATA OUTPUT
N - 6
N - 6
N - 5
N - 5
N - 4
N - 4
N - 3
N - 3
N - 2
N - 1
N - 1
N
N
N + 1
D9A–D0A
DATA OUTPUT
N - 2
N + 1
D9B–D0B
Figure 3. System Timing Diagram
Table 1. MAX1180 Output Codes For Differential Inputs
STRAIGHT OFFSET
BINARY
DIFFERENTIAL INPUT
VOLTAGE*
TWO’S COMPLEMENT
DIFFERENTIAL INPUT
T/B = 1
T/B = 0
✕
V
511/512
+FULL SCALE - 1LSB
+ 1 LSB
11 1111 1111
10 0000 0001
10 0000 0000
01 1111 1111
00 0000 0001
00 0000 0000
01 1111 1111
00 0000 0001
00 0000 0000
11 1111 1111
10 0000 0001
10 0000 0000
REF
✕
V
1/512
REF
0
Bipolar Zero
✕
-V
1/512
- 1 LSB
REF
✕
-V
511/512
512/512
-FULL SCALE + 1 LSB
-FULL SCALE
REF
REF
✕
-V
*V
REF
= V
– V
REFP REFN
requires a reduced full-scale range. For stability and
noise filtering purposes, bypass REFIN with a >10nF
capacitor to GND. In internal reference mode, REFOUT,
COM, REFP, and REFN become low-impedance out-
puts.
shut down, these nodes become high impedance and
may be driven through separate external reference
sources.
Clock Input (CLK)
The MAX1180’s CLK input accepts CMOS-compatible
clock signals. Since the interstage conversion of the
device depends on the repeatability of the rising and
falling edges of the external clock, use a clock with low
jitter and fast rise and fall times (< 2ns). In particular,
sampling occurs on the rising edge of the clock signal,
requiring this edge to provide lowest possible jitter. Any
significant aperture jitter would limit the SNR perfor-
mance of the on-chip ADCs as follows:
In the buffered external reference mode, adjust the ref-
erence voltage levels externally by applying a stable
and accurate voltage at REFIN. In this mode, COM,
REFP, and REFN become outputs. REFOUT may be left
open or connected to REFIN through a >10kΩ resistor.
In the unbuffered external reference mode, connect
REFIN to GND. This deactivates the on-chip reference
buffers for REFP, COM, and REFN. With their buffers
______________________________________________________________________________________ 13
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
✕
✕
SNR = 20 log (1 / [2π x f
t ]),
AJ
dB
10
IN
OE
where f represents the analog input frequency and
AJ
IN
t
is the time of the aperture jitter.
t
t
DISABLE
ENABLE
Clock jitter is especially critical for undersampling
applications. The clock input should always be consid-
ered as an analog input and routed away from any ana-
log input or other digital signal lines.
OUTPUT
HIGH-Z
HIGH-Z
HIGH-Z
VALID DATA
VALID DATA
D9A–D0A
The MAX1180 clock input operates with a voltage thresh-
OUTPUT
D9B–D0B
HIGH-Z
old set to V /2. Clock inputs with a duty cycle other
DD
than 50%, must meet the specifications for high and low
periods as stated in the Electrical Characteristics.
Figure 4. Output Timing Diagram
System Timing Requirements
Figure 3 depicts the relationship between the clock
input, analog input, and data output. The MAX1180
samples at the rising edge of the input clock. Output
data for channels A and B is valid on the next rising
edge of the input clock. The output data has an internal
latency of five clock cycles. Figure 4 also determines
the relationship between the input clock parameters
and the valid output data on channels A and B.
disabled) and current consumption is reduced to
2.8mA.
To enter full power-down mode, pull PD high. With OE
simultaneously low, all outputs are latched at the last
value prior to the power-down. Pulling OE high, forces
the digital outputs into a high-impedance state.
Applications Information
Figure 5 depicts a typical application circuit containing
two single-ended to differential converters. The internal
Digital Output Data, Output Data Format
Selection (T/B), Output Enable (OE)
reference provides a V /2 output voltage for level-
DD
All digital outputs, D0A–D9A (Channel A) and D0B–D9B
(Channel B), are TTL/CMOS logic-compatible. There is
a five clock cycle latency between any particular sam-
ple and its corresponding output data. The output cod-
ing can be chosen to be either straight offset binary or
two’s complement (Table 1) controlled by a single pin
(T/B). Pull T/B low to select offset binary and high to
activate two’s complement output coding. The capaci-
tive load on the digital outputs D0A–D9A and D0B–D9B
should be kept as low as possible (<15pF), to avoid
large digital currents that could feed back into the ana-
log portion of the MAX1180, thereby degrading its
dynamic performance. Using buffers on the digital out-
puts of the ADCs can further isolate the digital outputs
from heavy capacitive loads. To further improve the
dynamic performance of the MAX1180 small-series
resistors (e.g., 100Ω), add to the digital output paths,
close to the MAX1180.
shifting purposes. The input is buffered and then split to
a voltage follower and inverter. One lowpass filter per
ADC suppresses some of the wideband noise associat-
ed with high-speed operational amplifiers. The user
may select the R
and C values to optimize the filter
IN
ISO
performance to suit a particular application. For the
application in Figure 5, a R of 50Ω is placed before
ISO
the capacitive load to prevent ringing and oscillation.
The 22pF C capacitor acts as a small bypassing
IN
capacitor.
Using Transformer Coupling
An RF transformer (Figure 6) provides an excellent
solution to convert a single-ended source signal to a
fully-differential signal, required by the MAX1180 for
optimum performance. Connecting the center tap of the
transformer to COM provides a V /2 DC level shift to
DD
the input. Although a 1:1 transformer is shown, a step-
up transformer may be selected to reduce the drive
requirements. A reduced signal swing from the input
driver, such as an op amp, may also improve the over-
all distortion.
Figure 4 displays the timing relationship between out-
put enable and data output valid, as well as power-
down/wake-up and data output valid.
Power-Down (PD) and Sleep (SLEEP)
Modes
The MAX1180 offers two power-save modes, sleep and
full power-down mode. In sleep mode (SLEEP = 1),
only the reference bias circuit is active (both ADCs are
In general, the MAX1180 provides better SFDR and
THD with fully-differential input signals, than a single-
ended drive, especially for high input frequencies. In
differential input mode, even-order harmonics are lower
as both inputs (INA+, INA- and/or INB+, INB-) are bal-
14 ______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
+5V
0.1µF
LOWPASS FILTER
INA+
MAX4108
R
ISO
50Ω
0.1µF
300Ω
C
IN
22pF
0.1µF
-5V
600Ω
600Ω
300Ω
COM
0.1µF
+5V
+5V
0.1µF
0.1µF
600Ω
INPUT
0.1µF
0.1µF
LOWPASS FILTER
MAX4108
300Ω
300Ω
INA-
MAX4108
R
ISO
C
IN
22pF
50Ω
-5V
-5V
+5V
300Ω
300Ω
600Ω
MAX1180
0.1µF
LOWPASS FILTER
INB+
MAX4108
R
ISO
50Ω
0.1µF
300Ω
C
IN
22pF
0.1µF
600Ω
-5V
600Ω
300Ω
0.1µF
+5V
+5V
0.1µF
0.1µF
600Ω
INPUT
0.1µF
LOWPASS FILTER
MAX4108
300Ω
300Ω
INB-
MAX4108
R
ISO
50Ω
C
IN
22pF
-5V
0.1µF
600Ω
-5V
300Ω
300Ω
Figure 5. Typical Application for Single-Ended to Differential Conversion
______________________________________________________________________________________ 15
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
lator followed by subsequent up-conversion can gener-
25Ω
ate the QAM signal. The result is an in-phase (I) and a
INA+
quadrature (Q) carrier component, where the Q compo-
22pF
nent is 90 degrees phase-shifted with respect to the in-
phase component. At the receiver, the QAM signal is
0.1µF
1
2
6
5
4
divided down into its I and Q components, essentially
representing the modulation process reversed. Figure 8
displays the demodulation process performed in the
analog domain, using the dual-matched, +3V, 10-bit
ADCs, MAX1180 and the MAX2451 quadrature demod-
ulators, to recover and digitize the I and Q baseband
signals. Before being digitized by the MAX1180, the
mixed-down signal components may be filtered by
matched analog filters, such as Nyquist or Pulse-
Shaping filters which remove any unwanted images
from the mixing process, enhances the overall signal-
to-noise (SNR) performance, and minimizes intersym-
bol interference.
T1
V
IN
N.C.
COM
2.2µF
0.1µF
3
MINICIRCUITS
TT1–6
25Ω
INA-
INB+
22pF
22pF
MAX1180
25Ω
Grounding, Bypassing,
and Board Layout
0.1µF
1
2
6
5
4
T1
V
IN
The MAX1180 requires high-speed board layout design
techniques. Locate all bypass capacitors as close to
the device as possible, preferably on the same side as
the ADC, using surface-mount devices for minimum
N.C.
2.2µF
0.1µF
3
MINICIRCUITS
TT1–6
inductance. Bypass V , REFP, REFN, and COM with
DD
25Ω
two parallel 0.1µF ceramic capacitors and a 2.2µF
bipolar capacitor to GND. Follow the same rules to
INB-
22pF
bypass the digital supply (OV ) to OGND. Multilayer
DD
boards with separate ground and power planes, pro-
duce the highest level of signal integrity. Consider the
use of a split ground plane arranged to match the
physical location of the analog ground (GND) and the
digital output driver ground (OGND) on the ADCs pack-
age. The two ground planes should be joined at a sin-
gle point, such that the noisy digital ground currents do
not interfere with the analog ground plane. The ideal
location of this connection can be determined experi-
mentally at a point along the gap between the two
ground planes, which produces optimum results. Make
this connection with a low-value, surface-mount resistor
(1Ω to 5Ω), a ferrite bead, or a direct short.
Alternatively, all ground pins could share the same
ground plane, if the ground plane is sufficiently isolated
from any noisy, digital systems ground plane (e.g.,
downstream output buffer or DSP ground plane). Route
high-speed digital signal traces away from the sensitive
analog traces of either channel. Make sure to isolate
the analog input lines to each respective converter to
Figure 6. Transformer-Coupled Input Drive
anced, and each of the ADC inputs only require half the
signal swing compared to single-ended mode.
Single-Ended AC-Coupled Input Signal
Figure 7 shows an AC-coupled, single-ended applica-
tion. Amplifiers, like the MAX4108, provide high-speed,
high bandwidth, low-noise, and low distortion to main-
tain the integrity of the input signal.
Typical QAM Demodulation Application
The most frequently used modulation technique for dig-
ital communications application is the Quadrature
Amplitude Modulation (QAM). QAMs are typically found
in spread-spectrum based systems. A QAM signal rep-
resents a carrier frequency modulated in both ampli-
tude and phase. At the transmitter, modulating the
baseband signal with quadrature outputs, a local oscil-
16 ______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
REFP
1kΩ
1kΩ
R
V
IN
ISO
50Ω
0.1µF
INA+
COM
INA-
MAX4108
C
IN
22pF
100Ω
100Ω
REFN
0.1µF
R
50Ω
ISO
C
22pF
IN
REFP
MAX1180
1kΩ
R
ISO
50Ω
V
IN
0.1µF
INB+
MAX4108
C
IN
22pF
100Ω
100Ω
1kΩ
REFN
0.1µF
R
50Ω
ISO
INB-
C
22pF
IN
Figure 7. Using an Op Amp for Single-Ended, AC-Coupled Input Drive
MAX2451
INA+
INA-
0°
90°
DSP POST
PROCESSING
MAX1180
INB+
INB-
DOWNCONVERTER
÷
8
Figure 8. Typical QAM Application, Using the MAX1180
______________________________________________________________________________________ 17
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Signal-to-Noise Ratio (SNR)
For a waveform perfectly reconstructed from digital
samples, the theoretical maximum SNR is the ratio of
the full-scale analog input (RMS value) to the RMS
quantization error (residual error).
CLK
ANALOG
INPUT
The ideal, theoretical minimum analog-to-digital noise is
caused by quantization error only and results directly
from the ADCs resolution (N-Bits):
t
AD
t
AJ
✕
SNR
= 6.02
N + 1.76
dB
dB[max]
dB
SAMPLED
DATA (T/H)
In reality, there are other noise sources besides quanti-
zation noise; thermal noise, reference noise, clock jitter,
etc. SNR is computed by taking the ratio of the RMS
signal to the RMS noise, which includes all spectral
components minus the fundamental, the first five har-
monics, and the DC offset.
HOLD
TRACK
TRACK
T/H
Figure 9. T/H Aperture Timing
Signal-to-Noise Plus Distortion (SINAD)
SINAD is computed by taking the ratio of the RMS sig-
nal to all spectral components minus the fundamental
and the DC offset.
minimize channel-to-channel crosstalk. Keep all signal
lines short and free of 90 degree turns.
Effective Number of Bits (ENOB)
ENOB specifies the dynamic performance of an ADC at
a specific input frequency and sampling rate. An ideal
ADC’s error consists of quantization noise only. ENOB
is computed from:
Static Parameter Definitions
Integral Nonlinearity (INL)
Integral nonlinearity is the deviation of the values on an
actual transfer function from a straight line. This straight
line can be either a best straight-line fit or a line drawn
between the endpoints of the transfer function, once
offset and gain errors have been nullified. The static lin-
earity parameters for the MAX1180 are measured using
the best straight-line fit method.
SINAD −1.76
dB
dB
ENOB =
6.02
dB
Total Harmonic Distortion (THD)
THD is typically the ratio of the RMS sum of the first four
harmonics of the input signal to the fundamental itself.
This is expressed as:
Differential Nonlinearity (DNL)
Differential nonlinearity is the difference between an
actual step-width and the ideal value of 1LSB. A DNL
error specification of less than 1LSB guarantees no
missing codes and a monotonic transfer function.
2
2
2
2
V2 + V3 + V4 + V5
THD = 20 × log
10
Dynamic Parameter Definitions
V
1
Aperture Jitter
where V is the fundamental amplitude, and V through
Figure 9 depicts the aperture jitter (t ), which is the
AJ
1
2
V
are the amplitudes of the 2nd- through 5th-order
harmonics.
sample-to-sample variation in the aperture delay.
5
Aperture Delay
Aperture delay (t ) is the time defined between the
AD
Spurious-Free Dynamic Range (SFDR)
SFDR is the ratio expressed in decibels of the RMS
amplitude of the fundamental (maximum signal compo-
nent) to the RMS value of the next largest spurious
component, excluding DC offset.
falling edge of the sampling clock and the instant when
an actual sample is taken (Figure 9).
18 ______________________________________________________________________________________
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Intermodulation Distortion (IMD)
Chip Information
The two-tone IMD is the ratio expressed in decibels of
TRANSISTOR COUNT: 10,811
either input tone to the worst 3rd-order (or higher) inter-
PROCESS: CMOS
modulation products. The individual input tone levels
are at -6.5dB full scale and their envelope is at -0.5dB
full scale.
Functional Diagram
V
DD
OGND
OV
DD
GND
INA+
10
10
OUTPUT
DRIVERS
PIPELINE
ADC
D9A–D0A
DEC
T/H
INA-
CONTROL
CLK
OE
INB+
INB-
10
10
PIPELINE
ADC
OUTPUT
DRIVERS
DEC
T/H
D9B–D0B
T/B
PD
SLEEP
REFERENCE
MAX1180
REFOUT
REFN COM REFP
REFIN
______________________________________________________________________________________ 19
Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
Package Information
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
20 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2001 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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