U426-SOIC [Linear]

Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8;
U426-SOIC
型号: U426-SOIC
厂家: Linear    Linear
描述:

Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8

开关 光电二极管 晶体管
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U426  
HIGH INPUT IMPEDANCE  
MONOLITHIC DUAL  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix U426  
The U426 is a high input impedance Monolithic Dual N-Channel JFET  
FEATURES  
HIGH INPUT IMPEDANCE  
HIGH GAIN  
LOW POWER OPERATION  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
The U426 monolithic dual n-channel JFET is designed  
to provide very high input impedance for differential  
amplification and impedance matching. Among its  
many unique features, this series offers operating gate  
current specified at -500 fA. The U426 is a direct  
replacement for discontinued Siliconix U426.  
IG = 0.25pA MAX  
gfs = 120µmho MIN  
VGS(OFF) = 2V MAX  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
The hermetically sealed TO-71 & TO-78 packages are  
well suited for military applications. The 8 Pin P-DIP  
and 8 Pin SOIC provide ease of manufacturing, and the  
symmetrical pinout prevents improper orientation.  
65°C to +150°C  
+150°C  
Maximum Voltage and Current for Each Transistor – Note 1  
VGSS  
VDSO  
IG(f)  
Gate Voltage to Drain or Source  
Drain to Source Voltage  
Gate Forward Current  
40V  
40V  
10mA  
(See Packaging Information).  
Maximum Power Dissipation  
Device Dissipation @ Free Air – Total  
U426 Applications:  
400mW @ +125°C  
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED  
ƒ
ƒ
ƒ
Ultra Low Input Current Differential Amps  
High-Speed Comparators  
Impedance Converters  
SYMBOL  
CHARACTERISTICS VALUE UNITS CONDITIONS  
|V GS12 /T|max.  
DRIFT VS.  
TEMPERATURE  
OFFSET VOLTAGE  
40  
µV/°C  
VDG=10V, ID=30µA  
TA=55°C to +125°C  
VDG=10V, ID=30µA  
| V GS12 | max.  
25  
mV  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
BVGGO  
CHARACTERISTICS  
Breakdown Voltage  
GateToGate Breakdown  
TRANSCONDUCTANCE  
Full Conduction  
MIN.  
40  
40  
TYP.  
60  
‐‐  
MAX.  
‐‐  
‐‐  
UNITS  
V
V
CONDITIONS  
VDS = 0 IG =1nA  
IG = 1µA ID = 0 IS= 0  
YfSS  
YfS  
300  
120  
‐‐  
200  
1500  
350  
µmho  
µmho  
VDS = 10V  
VDG = 10V  
VGS = 0V f = 1kHz  
ID = 30µA f = 1kHz  
Typical Operation  
DRAIN CURRENT  
Click To Buy  
IDSS  
Full Conduction  
GATE VOLTAGE  
Pinchoff voltage  
Operating Range  
GATE CURRENT  
Operating  
60  
‐‐  
1000  
µA  
VDS = 10V  
VGS = 0V  
VGS(off)  
VGS  
‐‐  
‐‐  
‐‐  
‐‐  
2.0  
1.8  
V
V
VDS = 10V  
VDG = 10V  
ID = 1nA  
ID = 30µA  
IGmax.  
IGmax.  
IGSSmax.  
IGSSmax.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
.25  
250  
1.0  
1.0  
pA  
pA  
pA  
nA  
VDG = 10V  
ID = 30µA  
VGS = 20V  
High Temperature  
At Full Conduction  
High Temperature  
OUTPUT CONDUCTANCE  
Full Conduction  
Operating  
TA = +125°C  
VDS = 0V  
TA = +125°C  
YOSS  
YOS  
‐‐  
‐‐  
‐‐  
0.1  
10  
3.0  
µmho  
µmho  
VDS = 10V  
VGS = 0V  
ID = 30µA  
VDG = 10V  
COMMON MODE REJECTION  
20 log | V GS12/ VDS|  
20 log | V GS12/ VDS|  
NOISE  
CMR  
‐‐  
‐‐  
90  
90  
‐‐  
‐‐  
dB  
dB  
VDS = 10 to 20V  
VDS = 5 to 10V  
VDG = 10V ID = 30µA RG = 10MΩ  
f = 10Hz  
VDG = 10V ID = 30µA f = 10Hz  
VDG = 10V ID = 30µA f = 1KHz  
ID = 30µA  
ID = 30µA  
NF  
en  
Figure  
Voltage  
‐‐  
‐‐  
‐‐  
‐‐  
20  
10  
1
70  
‐‐  
dB  
nV/Hz  
CAPACITANCE  
Input  
Reverse Transfer  
CISS  
CRSS  
‐‐  
‐‐  
‐‐  
‐‐  
3.0  
1.5  
pF  
pF  
VDS= 10V  
VGS = 0 f = 1MHz  
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired  
TO-71 / TO-78 (Top View)  
P-DIP / SOIC (Top View)  
Available Packages:  
U426 in TO-71 & TO-78  
U426 in PDIP & SOIC  
U426 available as bare die  
Please contact Micross for full package and die dimensions  
Email: chipcomponents@micross.com  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  

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