LTC559X_技术文档

LTC5567

300MHz to 4GHz Active

Downconverting Mixer with

Wideband IF

FeaTures

DescripTion

The LTC^®5567 is optimized for RF downconverting mixer

applications that require wide IF bandwidth. The part is

also a pin-compatible upgrade to the LT5557 active mixer,

offering higher linearity and 1dB compression, wider

bandwidth, and lower output spurious levels. Integrated

RF and LO transformers and LO buffer amplifiers allow a

very compact solution.

n

High IIP3: +26.9dBm at 1950MHz

n

1.9dB Conversion Gain

n

Low Noise Figure: 11.8dB at 1950MHz

n

16.5dB NF Under 5dBm Blocking

n

Low Power: 294mW

n

Wide IF Frequency Range Up to 2.5GHz

n

LO Input 50Ω Matched when Shutdown

n

–40°C to 105°C Operation (T )

Very Small Solution Size

C

The RF input is 50Ω matched from 1.4GHz to 3GHz, and

easily matched for higher or lower RF frequencies with

simple external matching. The LO input is 50Ω matched

from 1GHz to 4GHz, even when the IC is disabled. The LO

input is easily matched for higher or lower frequencies, as

low as 300MHz, with simple external matching. The low

capacitance differential IF output is usable up to 2.5GHz.

n

Pin Compatible with LT5557

16-Lead (4mm × 4mm) QFN package

applicaTions

n

Wireless Infrastructure Receivers

L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear

Technology Corporation. All other trademarks are the property of their respective owners.

n

DPD Observation Receivers

n

CATV Infrastructure

Typical applicaTion

DPD Observation Receiver Mixer with 500MHz IF Bandwidth and

+13dBm Input P1dB into 200Ω Load

Voltage Conversion Gain, IIP3

and NF vs IF Frequency

LO

1.65GHz

0dBm

28

26

24

3.9pF

IIP3

LO

LTC5567

200Ω LOAD

330pF

390nH

22 RF = 1.69GHz TO 2.24GHz

LO = 1.65GHz

+

20

IF

Z

T

= 50Ω

RF

IF

C

18

16

14

12

10

8

2.7pF

LO

RF

249Ω

100Ω

= 200Ω DIFFERENTIAL

1.69GHz

= 25°C

IF

TO

RF

EN

AMP

2.24GHz

NF

RF

390nH

330pF

–

IF

5567 TA01a

G

V

EN

BIAS

6

V

IADJ

CC

4

10nF

3.3V

89mA

40 90 140 190 240 290 340 390 440 490 540 590

IF FREQUENCY (MHz)

10nF

5567 TA01b

5567f

1

LTC5567

absoluTe MaxiMuM raTings

pin conFiguraTion

(Note 1)

+

–

TOP VIEW

Supply Voltage (V , IF , IF ) ..................................4.0V

CC

Enable Input Voltage (EN)................–0.3V to V + 0.3V

CC

16 15 14 13

LO Input Power (300MHz to 4.5GHz)................. +10dBm

LO Input DC Voltage............................................... 0.1V

RF Input Power (300MHz to 4GHz).................... +15dBm

RF Input DC Voltage............................................... 0.1V

TEMP Monitor Input Current..................................10mA

TEMP

GND

RF

1

2

3

4

12 GND

+

11 IF

17

GND

–

IF

10

9

GND

5

6

7

8

Operating Temperature Range (T )........ –40°C to 105°C

C

Junction Temperature (T ) .................................... 150°C

J

UF PACKAGE

16-LEAD (4mm × 4mm) PLASTIC QFN

= 150°C, θ = 8°C/W

Storage Temperature Range .................. –65°C to 150°C

T

JMAX

JC

EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB

orDer inForMaTion

LEAD FREE FINISH

TAPE AND REEL

PART MARKING

PACKAGE DESCRIPTION

16-Lead (4mm × 4mm) Plastic QFN

CASE TEMPERATURE RANGE

–40°C to 105°C

LTC5567IUF#PBF

LTC5567IUF#TRPBF

5567

Consult LTC Marketing for parts specified with wider operating temperature ranges.

Consult LTC Marketing for information on non-standard lead based finish parts.

For more information on lead free part marking, go to: http://www.linear.com/leadfree/

For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/

ac elecTrical characTerisTics ^V_CC= 3.3V, EN = High. Test circuit shown in Figure 1.

(Notes 2, 3, 4)

PARAMETER

CONDITIONS

MIN

TYP

300 to 4000

300 to 4500

5 to 2500

>12

MAX

UNITS

MHz

dB

RF Input Frequency Range

LO Input Frequency Range

IF Output Frequency Range

RF Input Return Loss

LO Input Return Loss

IF Output Impedance

LO Input Power

External Matching Required

Z = 50Ω, 1400MHz to 3000MHz, C3 = 2.7pF

O

Z = 50Ω, 1000MHz to 4000MHz, C5 = 3.9pF

O

>10

dB

Differential at 153MHz

532Ω||1.0pF

0

R||C

dBm

–6

6

RF to LO Isolation

RF = 300MHz to 1000MHz

RF = 1000MHz to 4000MHz

>59

>50

dB

RF to IF Isolation

RF = 300MHz to 700MHz

RF = 700MHz to 1000MHz

RF = 1000MHz to 4000MHz

>47

>40

>28

dB

5567f

2

LTC5567

ac elecTrical characTerisTics ^V_CC= 3.3V, EN = High. T_C= 25°C, P_LO= 0dBm, IF = 153MHz,

P_RF= –6dBm (–6dBm/tone for 2-tone tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Power Conversion Gain

RF = 450MHz, High Side LO

RF = 850MHz, High Side LO

RF = 1950MHz, Low Side LO

RF = 2550MHz, Low Side LO

RF = 3500MHz, Low Side LO

1.5

2.0

1.9

1.7

1.2

dB

0.8

Conversion Gain Flatness

RF = 1950 30MHz, LO = 1797MHz, IF = 153 30MHz

0.09

dB

Conversion Gain vs Temperature

T = –40°C to 105ºC, RF = 1950MHz, Low Side LO

C

–0.013

dB/°C

2-Tone Input 3rd Order Intercept (∆f = 2MHz)

RF = 450MHz, High Side LO

RF = 850MHz, High Side LO

RF = 1950MHz, Low Side LO

RF = 2550MHz, Low Side LO

RF = 3500MHz, Low Side LO

26.0

26.7

26.9

26.0

26.5

dBm

RF

24.2

2-Tone Input 2nd Order Intercept

RF = 450MHz (527MHz/373MHz), LO = 603MHz

RF = 850MHz (927MHz/773MHz), LO = 1003MHz

RF = 1950MHz (2027MHz/1873MHz), LO = 1797MHz

RF = 2550MHz (2627MHz/2473MHz), LO = 2397MHz

RF = 3500MHz (3577MHz/3423MHz), LO = 3347MHz

67

64

72

71

63

dBm

(∆f = 154MHz = f

)

RF

IM2

SSB Noise Figure

RF = 450MHz, High Side LO

RF = 850MHz, High Side LO

RF = 1950MHz, Low Side LO

RF = 2550MHz, Low Side LO

RF = 3500MHz, Low Side LO

12.5

11.4

11.8

12.6

14.6

dB

13.5

SSB Noise Figure Under Blocking

LO to RF Leakage

RF = 850MHz, High Side LO, 750MHz Blocker at 5dBm

RF = 1950MHz, Low Side LO, 2050MHz Blocker at 5dBm

16.5

dB

LO = 300MHz to 700MHz

LO = 700MHz to 2200MHz

LO = 2200MHz to 4500MHz

<–62

<–56

<–47

dBm

LO to IF Leakage

LO = 300MHz to 500MHz

LO = 500MHz to 700MHz

LO = 700MHz to 4500MHz

<–43

<–37

<–41

dBm

1/2IF Output Spurious Product

RF

850MHz: f = 926.5MHz at –6dBm, f = 1003MHz

–78

–73

dBc

RF

LO

(f Offset to Produce Spur at f = 153MHz)

1950MHz: f = 1873.5MHz at –6dBm, f = 1797MHz

IF

RF LO

1/3IF Output Spurious Product

RF

850MHz: f = 952MHz at –6dBm, f = 1003MHz

–82

–80

dBc

RF

LO

(f Offset to Produce Spur at f = 153MHz)

1950MHz: f = 1848MHz at –6dBm, f = 1797MHz

IF

RF

LO

Input 1dB Compression

RF = 450MHz, High Side LO

RF = 850MHz, High Side LO

RF = 1950MHz, Low Side LO

RF = 2550MHz, Low Side LO

RF = 3500MHz, Low Side LO

11.0

10.9

10.1

10.2

10.4

dBm

5567f

3

LTC5567

Dc elecTrical characTerisTics ^V_CC= 3.3V, T_C= 25°C. Test circuit shown in Figure 1. (Note 2)

PARAMETER

CONDITIONS

MIN

TYP

3.3

89

MAX

UNITS

Supply Voltage (V

Supply Current

)

3.0

3.6

V

CC

Enabled

Disabled

EN = High

EN = Low

105

100

mA

µA

Enable Logic Input (EN)

Input High Voltage (On)

Input Low Voltage (Off)

Input Current

2.5

V

0.3

–0.3V to V + 0.3V

–30

100

µA

µs

CC

Turn-On Time

0.6

0.5

Turn-Off Time

Mixer DC Current Adjust (IADJ)

Open-Circuit DC Voltage

2.2

1.8

V

Short-Circuit DC Current

Pin Shorted to Ground

mA

Temperature Sensing Diode (TEMP)

DC Voltage at T = 25°C

I

IN

I

IN

= 10µA

= 80µA

716

773

mV

J

Voltage Temperature Coefficient

I

IN

I

IN

= 10µA

= 80µA

–1.75

–1.56

mV/°C

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 3: SSB Noise Figure measured with a small-signal noise source,

bandpass filter and 2dB matching pad on RF input, and bandpass filter on

the LO input.

Note 4: Specified performance includes 4:1 IF transformer and evaluation

Note 2: The LTC5567 is guaranteed functional over the –40°C to 105°C

PCB losses.

case temperature range (θ = 8°C/W).

JC

Typical Dc perForMance characTerisTics ^{EN = High, Test circuit shown in Figure 1.}

TEMP Diode Voltage vs Junction

Temperature

Supply Current vs Supply Voltage

98

96

94

92

90

88

86

84

900

850

800

750

700

650

600

550

500

I

= 80µA

IN

T

= 105°C

= 85°C

= 55°C

= 25°C

= –10°C

= –40°C

C

I

= 10µA

IN

3.4

SUPPLY VOLTAGE (V)

3.6

3.0

3.1

3.2

3.3

3.5

–45 –20

5

30

55

80 105 130

JUNCTION TEMPERATURE (°C)

V

CC

5567 G02

5567 G01

5567f

4

LTC5567

Typical perForMance characTerisTics ^{1400MHzto3000MHzapplication.Testcircuitshownin}

Figure 1. V_CC= 3.3V, P_LO= 0dBm, P_RF= –6dBm (–6dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 153MHz unless otherwise noted.

Conversion Gain, IIP3 and NF

vs RF Frequency (Low Side LO)

1950MHz Conversion Gain, IIP3

and NF vs LO Power (Low Side LO)

2550MHz Conversion Gain, IIP3

and NF vs LO Power (Low Side LO)

28

26

24

22

20

18

16

14

12

10

8

30

28

26

24

22

20

18

16

14

12

10

5

4

3

2

1

0

28

26

24

22

20

18

16

14

12

10

8

IIP3

T

= 85°C

= 25°C

= –40°C

C

T

= 85°C

= 25°C

= –40°C

C

T

= 25°C

C

NF

G

C

6

4

2

0

6

4

2

0

G

C

G

C

NF

–6

–4

–2

0

2

4

6

1.4

2.2

2.6 2.8

–6

–4

–2

0

2

4

6

1.6 1.8 2.0

2.4

3.0

LO INPUT POWER (dBm)

RF FREQUENCY (GHz)

LO INPUT POWER (dBm)

5567 G05

5567 G03

5567 G04

Conversion Gain, IIP3 and NF

vs RF Frequency (High Side LO)

1950MHz Conversion Gain, IIP3

and NF vs LO Power (High Side LO)

2550MHz Conversion Gain, IIP3

and NF vs LO Power (High Side LO)

28

26

24

22

20

18

16

14

12

10

8

30

28

26

24

22

20

18

16

14

12

10

5

4

3

2

1

0

28

26

24

22

20

18

16

14

12

10

8

IIP3

T

= 85°C

= 25°C

= –40°C

C

T

= 85°C

= 25°C

= –40°C

C

T

= 25°C

C

NF

G

C

6

4

2

0

6

4

2

0

G

C

G

C

NF

–6

–4

–2

0

2

4

6

1.4

2.2

2.6 2.8

–6

–4

–2

0

2

4

6

1.6 1.8 2.0

2.4

3.0

LO INPUT POWER (dBm)

RF FREQUENCY (GHz)

LO INPUT POWER (dBm)

5567 G08

5567 G06

5567 G07

RF Isolation vs RF Frequency

LO Leakage vs LO Frequency

65

60

55

50

45

40

35

30

25

–20

–30

–40

–50

–60

–70

T

= 25°C

T

= 25°C

C

RF-LO

LO-IF

LO-RF

RF-IF

1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

1.2

1.6

2.0

2.4

2.8

3.2

RF FREQUENCY (GHz)

LO FREQUENCY (GHz)

5567 G09

5567 G10

5567f

5

LTC5567

Typical perForMance characTerisTics ^{1400MHzto3000MHzapplication.Testcircuitshownin}

Figure 1. V_CC= 3.3V, P_LO= 0dBm, P_RF= –6dBm (–6dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 153MHz unless otherwise noted.

2-Tone IF Output Power, IM3 and

IM5 vs RF Input Power

Single Tone IF Output Power, 2 × 2

and 3 × 3 Spurs vs RF Input Power

2 × 2 and 3 × 3 Spur Suppression

vs LO Power

15

5

–60

–65

–70

–75

–80

–85

–90

10

0

T

= 25°C

T

= 25°C

C

LO = 1797MHz

RF = 1950MHz

= –6dBm

IF

OUT

P

RF

IF

OUT

–5

–10

–20

–30

–40

–50

–60

–70

–80

–90

LO = 1797MHz

(RF = 1950MHz)

2RF-2LO

(RF = 1873.5MHz)

–15

–25

–35

–45

–55

–65

–75

–85

T

= 25°C

C

RF1 = 1949MHz

RF2 = 1951MHz

LO = 1797MHz

3RF-3LO

(RF = 1848MHz)

3RF-3LO

(RF = 1848MHz)

IM3

2RF-2LO

(RF = 1873.5MHz)

IM5

–6

–2

0

2

4

6

–12

–9

–3

0

3

6

–15 –12 –9 –6 –3

0

3

6

9

12

–4

–6

LO INPUT POWER (dBm)

RF INPUT POWER (dBm/TONE)

RF INPUT POWER (dBm)

5567 G13

5567 G11

5567 G12

SSB Noise Figure

vs RF Blocker Level

Conversion Gain, IIP3, NF and RF

Input P1dB vs Temperature

Conversion Gain, IIP3 and NF

vs Supply Voltage

22

21

20

19

18

17

16

15

14

13

12

11

28

26

24

22

20

18

16

14

12

10

8

30

27

24

21

18

15

12

9

T

= 25°C

C

RF = 1950MHz

IIP3

BLOCKER = 2050MHz

LO = 1797MHz

IIP3

RF = 1950MHz

LOW SIDE LO

T

= 85°C

C

RF = 1950MHz

LOW SIDE LO

= 25°C

P

LO

= –3dBm

= –40°C

NF

P

= 0dBm

LO

SSB NF

P1dB

6

4

2

0

6

G

C

P

0

= 3dBm

5

G

C

LO

3

0

–25

–15 –10 –5

10

–20

–45

–15

15

45

75

105

3.0

3.1

3.3

3.4

3.5

3.6

3.2

RF BLOCKER POWER (dBm)

CASE TEMPERATURE (°C)

V

SUPPLY VOLTAGE (V)

CC

5567 G14

5567 G15

5567 G16

1950MHz Conversion Gain

Distribution

1950MHz IIP3 Distribution

1950MHz SSB NF Distribution

50

45

40

35

30

25

20

15

10

5

30

25

20

15

10

5

50

45

40

35

30

25

20

15

10

5

RF = 1950MHz

LOW SIDE LO

RF = 1950MHz, LOW SIDE LO

105°C

25°C

–40°C

105°C

25°C

–40°C

25°C

–40°C

0

0.6

1.0

1.4

1.8

2.2

2.6

3.0

24.6 25.2 25.8 26.4 27.0 27.6 28.2 28.8

10.2 10.8 11.4 12.0 12.6 13.2 13.8

CONVERSION GAIN (dB)

IIP3 (dBm)

SSB NOISE FIGURE (dB)

5567 G17

5567 G18

5567 G19

5567f

6

LTC5567

Typical perForMance characTerisTics ^{700MHz to 1000MHz application. Test circuit shown in}

Figure 1. V_CC= 3.3V, P_LO= 0dBm, P_RF= –6dBm (–6dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 153MHz unless otherwise noted.

Conversion Gain, IIP3 and NF

vs RF Frequency

850MHz Conversion Gain,

IIP3 and NF vs LO Power

850MHz Conversion Gain,

IIP3 and NF vs Supply Voltage

28

26

24

22

20

18

16

14

12

10

8

28

26

24

22

20

18

16

14

12

10

8

28

25

22

19

16

13

10

7

IIP3

T

= 85°C

T

= 85°C

= 25°C

= –40°C

C

= 25°C

RF = 850MHz

T

HIGH SIDE LO

RF = 850MHz

HIGH SIDE LO

= –40°C

HIGH SIDE LO

T

= 25°C

C

NF

6

G

C

4

2

4

2

G

C

G

C

4

0

700

0

1

750

800

850

900

950 1000

–6

–4

–2

0

2

4

6

3.0

3.1

3.2

3.3

3.6

3.4

3.5

RF FREQUENCY (MHz)

LO INPUT POWER (dBm)

V

SUPPLY VOLTAGE (V)

CC

5567 G20

5567 G21

5567 G22

RF Isolation and LO Leakage vs

Frequency

Conversion Gain, IIP3, NF and RF

Input P1dB vs Temperature

SSB Noise Figure

vs RF Blocker Level

22

70

60

50

40

30

20

10

0

28

26

24

22

T

= 25°C

T

= 25°C

RF-LO

ISO

C

21

20

19

18

17

16

15

14

13

12

11

IIP3

RF = 850MHz

–10

–20

–30

–40

–50

–60

–70

BLOCKER = 750MHz

LO = 1003MHz

20 RF = 850MHz

RF-IF

ISO

HIGH SIDE LO

18

16

14

12

10

8

6

4

2

0

P

LO

= –3dBm

NF

P

= 0dBm

LO

P1dB

LO-IF

LO-RF

G

C

P

LO

= 3dBm

5

700

800

900

1000

1100

1200

–45

–15

15

45

75

105

–25 –20 –15 –10 –5

0

10

RF/LO FREQUENCY (MHz)

RF BLOCKER POWER (dBm)

CASE TEMPERATURE (°C)

5567 G25

5567 G23

5567 G24

2-Tone IF Output Power, IM3 and

IM5 vs RF Input Power

Single Tone IF Output Power, 2 × 2

and 3 × 3 Spurs vs RF Input Power

2 × 2 and 3 × 3 Spur Suppression

vs LO Power

15

5

–60

–65

–70

–75

–80

–85

–90

20

T

= 25°C

T

= 25°C

C

LO = 1003MHz

10

0

RF = 850MHz

= –6dBm

IF

OUT

P

RF

IF

OUT

–5

LO = 1003MHz

(RF = 850MHz)

–15

–25

–35

–45

–55

–65

–75

–85

–10

–20

–30

–40

–50

–60

–70

–80

2LO-2RF

(RF = 926.5MHz)

T

= 25°C

C

RF1 = 849MHz

RF2 = 851MHz

LO = 1003MHz

3LO-3RF

(RF = 952MHz)

IM3

IM5

3

3LO-3RF

(RF = 952MHz)

2LO-2RF

(RF = 926.5MHz)

6

9

12

–6

–2

0

2

4

6

–12

–9

–3

0

6

–15 –12 –9 –6 –3

0

3

–4

–6

LO INPUT POWER (dBm)

RF INPUT POWER (dBm/TONE)

RF INPUT POWER (dBm)

5567 G28

5567 G27

5567 G26

5567f

7

LTC5567

Typical perForMance characTerisTics ^{400MHz to 500MHz application. Test circuit shown in}

Figure 1. V_CC= 3.3V, P_LO= 0dBm, P_RF= –6dBm (–6dBm/tone for 2-tone IIP3 tests, ∆f = 2MHz), IF = 153MHz unless otherwise noted.

Conversion Gain, IIP3 and NF vs

RF Frequency

450MHz Conversion Gain,

IIP3 and NF vs LO Power

RF Isolation and LO Leakage

vs RF and LO Frequency

27

24

21

18

15

12

9

27

25

23

21

19

17

15

13

11

9

70

65

60

55

0

T

= 25°C

C

RF-IF

IIP3

–10

–20

–30

T

= 85°C

= 25°C

= –40°C

C

HIGH SIDE LO

NF

RF-LO

T

= 25°C

C

LO-IF

NF

50

45

–40

–50

40

35

30

–60

–70

–80

7

5

3

1

LO-RF

650

6

G

C

3

G

C

0

450

500

600

400

700

400

425

450

475

500

–6

–4

–2

0

2

4

6

550

RF FREQUENCY (MHz)

LO INPUT POWER (dBm)

RF/LO FREQUENCY (MHz)

5567 G29

5567 G30

5567 G31

3GHz to 4GHz application. Test circuit shown in Figure 1.

Conversion Gain, IIP3 and NF

vs RF Frequency

3500MHz Conversion Gain,

IIP3 and NF vs LO Power

3500MHz Conversion Gain,

IIP3 and NF vs Supply Voltage

28

26

24

22

20

18

16

14

12

10

8

27

24

21

18

15

12

9

27

24

21

18

15

12

9

IIP3

LOW SIDE LO

= 25°C

RF = 3.5GHz

LOW SIDE LO

RF = 3.5GHz

LOW SIDE LO

T

C

NF

T

= 85°C

= 25°C

= –40°C

T

= 85°C

= 25°C

= –40°C

C

6

4

2

G

C

G

C

3

G

C

0

3.0

3.2

3.4

3.6

3.8

4.0

–6

–4

–2

0

6

2

4

3.0

3.1

3.2

3.3

3.4

3.5

3.6

RF FREQUENCY (GHz)

LO INPUT POWER (dBm)

V

SUPPLY VOLTAGE

CC

5567 G32

5567 G33

5567 G34

Conversion Gain, IIP3 and RF

Input P1dB vs Temperature

RF Isolation vs RF Frequency

LO leakage vs LO Frequency

28

26

24

22

20

18

16

14

12

10

8

60

50

–20

–25

–30

–35

–40

–45

–50

–55

–60

T

= 25°C

C

IIP3

RF-LO

40

RF = 3500MHz

LOW SIDE LO

30

20

NF

T

= 25°C

10

C

LO-IF

0

P1dB

–10

–20

–30

–40

6

4

2

0

LO-RF

RF-IF

G

C

3.0

3.2

3.4

3.6

3.8

4.0

2.6

3.2

3.5

3.8

4.1

4.4

–45

–15

15

45

75

105

2.9

RF FREQUENCY (GHz)

LO FREQUENCY (GHz)

CASE TEMPERATURE (°C)

5567 G35

5567 G36

5567 G37

5567f

8

LTC5567

pin FuncTions

TEMP (Pin 1): Temperature Sensing Diode. This pin is

connected to the anode of a diode that may be used to

measure the die temperature, by forcing a current and

measuring the voltage.

V

(Pin6):PowerSupplyPin.Thispinmustbeconnected

CC

toaregulated3.3Vsupply, withabypasscapacitorlocated

close to the pin. Typical DC current consumption is 34mA.

NC (Pins 7, 14): These pins are not connected internally.

GND (Pins 2, 4, 9, 12, 13, 16, Exposed Pad Pin 17):

Ground. These pins must be soldered to the RF ground

plane on the circuit board. The exposed pad metal of the

package provides both electrical contact to ground and

good thermal contact to the printed circuit board.

They can be left floating, connected to ground, or to V .

CC

IADJ (Pin 8): This pin allows adjustment of the mixer DC

supply current. Typical open-circuit DC voltage is 2.2V.

This pin should be left floating for optimum performance.

+

–

IF /IF (Pin 11/Pin 10): Open-Collector Differential IF

RF (Pin 3): Single-Ended RF Input. This pin is internally

connected to the primary winding of the integrated RF

transformer, which has low DC resistance to ground. A

series DC-blocking capacitor must be used if the RF

source has DC voltage present. The RF input is 50Ω

impedance matched from 1.4GHz to 3GHz, as long as

the mixer is enabled. Operation down to 300MHz or up

to 4GHz is possible with external matching.

Output. These pins must be connected to the V supply

CC

through impedance-matching inductors or a transformer

center tap. Typical DC current consumption is 27.5mA

into each pin.

LO (Pin 15): Single-Ended Local Oscillator Input. This

pin is internally connected to the primary winding of an

integrated transformer, which has low DC resistance to

ground. A series DC-blocking capacitor must be used to

avoid damage to the internal transformer. This input is

50Ω impedance matched from 1GHz to 4GHz, even when

the IC is disabled. Operation down to 300MHz or up to

4.5GHz is possible with external matching.

EN (Pin 5): Enable Pin. When the input voltage is greater

than 2.5V, the mixer is enabled. When the input voltage is

lessthan0.3V,themixerisdisabled.Typicalinputcurrentis

lessthan30µA. Thispinhasaninternalpull-downresistor.

block DiagraM

16

15

14

13

GND

LO

NC

GND

1

2

TEMP

GND

GND 12

LO

11

+

IF

RF

3

4

10

–

RF

IF

GND

BIAS

GND

9

17 GND

(EXPOSED PAD)

V

6

EN

NC

7

IADJ

CC

5

8

5567 BD

5567f

9

LTC5567

TesT circuiT

DC1861A

EVALUATION BOARD

LAYER STACK-UP

(NELCO N4000-13)

RF

GND

0.015"

0.062"

BIAS

GND

0.015"

C6

LO

IN

50Ω

C5

16

15

14

NC

13

GND

LO

GND

GND 12

+

1

2

TEMP

GND

C7

LTC5567

11

IF

T1

IF

OUT

R1

R2

L1

L2

50Ω

C2

17

GND

C3

L3

RF

IN

3

4

RF

50Ω

R4

0Ω

–

C4

10

9

IF

C8

GND

IADJ

V

EN

NC

7

CC

5

6

8

V

CC

3.3V

EN

89mA

C1

C9

5567 F01

APPLICATION

RF (MHz)

RF MATCH

C4

LO MATCH

C5

LO

HS

C3

L3

C6

15pF

10pF

2.7pF

—

300 to 400

400 to 500

120pF

2.7pF

3.9pF

18pF

12pF

4.7pF

—

2.2nH

2nH

—

47pF

27pF

6.8pF

3.9pF

HS

700 to 1000

1400 to 3000

3000 to 4000

HS

LS, HS

LS

—

0.7pF

—

LS = Low side, HS = High side

REF DES

C1, C2

VALUE

SIZE

0402

VENDOR

AVX

REF DES

C9

VALUE

1µF

SIZE

VENDOR

10nF

0603

—

AVX

C3 - C6

C7, C8

See Table

330pF

AVX

T1

4:1

Mini-Circuits TC8-1-10LN+

Coilcraft 0603HP

AVX

L1, L2

L3

300nH

See Table

0603

0402

R1, R2

3.01k, 1%

Coilcraft 0402HP

Figure 1. Standard Downmixer Test Circuit Schematic (153MHz Bandpass IF Matching)

5567f

10

LTC5567

applicaTions inForMaTion

Introduction

RF Input

TheLTC5567incorporatesahighlinearitydouble-balanced

active mixer, a high-speed limiting LO buffer and bias/

enable circuits. See the Pin Functions and Block Diagram

sections for a description of each pin. A test circuit sche-

matic showing all external components required for the

data sheet specified performance is shown in Figure 1.

A few additional components may be used to modify the

DC supply current or frequency response, which will be

discussed in the following sections.

A simplified schematic of the mixer’s RF input is shown

in Figure 3. As shown, one terminal of the integrated RF

transformer’sprimarywindingisconnectedtoPin3, while

the other terminal is DC-grounded internally. For this rea-

son, a series DC-blocking capacitor (C3) is needed if the

RF source has DC voltage present. The DC resistance of

the primary winding is approximately 4Ω. The secondary

winding of the RF transformer is internally connected to

the RF buffer amplifier.

The LO and RF inputs are single ended. The IF output is

differential. Low side or high side LO injection may be

used. The test circuit, shown in Figure 1, utilizes bandpass

IF output matching and an 8:1 IF transformer to realize a

50Ω single-ended IF output. The evaluation board layout

is shown in Figure 2.

The RF input is 50Ω matched from 1400MHz to 3000MHz

with a single 2.7pF series capacitor on the input. Matching

to RF frequencies above or below this frequency range is

easily accomplished by adding shunt capacitor C4, shown

in Figure 3. For RF frequencies below 500MHz, series

Figure 2. Evaluation Board Layout

5567f

11

LTC5567

applicaTions inForMaTion

0

LTC5567

C3

RF

IN

L3

C4

–5

RF

3

RF

BUFFER

–10

–15

–20

–25

–30

5567 F03

Figure 3. RF Input Schematic

T

= 25°C

inductor L3 is also needed. The evaluation board does

not have provisions for L3, so the RF input trace needs

to be cut to install it in series. The RF input matching ele-

ment values for each application are tabulated in Figure 1.

Measured RF input return losses are shown in Figure 4.

The RF input impedance and input reflection coefficient,

versus frequency are listed in Table 1.

C

–35

0.2

0.7

1.2

1.7

2.2

2.7

3.2

3.7

4.2

4.7

FREQUENCY (GHz)

5567 F04

400MHz TO 500MHz APP.

700MHz TO 1000MHz APP.

1400MHz TO 3000MHz APP.

3GHz TO 4GHz APP.

Figure 4. RF Input Return Loss

Table 1. RF Input Impedance and S11 (At Pin 3, No External

Matching, Mixer Enabled)

LTC5567

C5

LO

IN

LO

15

S11

FREQUENCY

(MHz)

INPUT

IMPEDANCE

LO

BUFFER

MAG

0.79

0.71

0.66

0.61

0.57

0.52

0.48

0.41

0.33

0.26

0.19

0.13

0.14

0.22

0.34

0.45

0.56

0.64

0.70

ANGLE

161.6

152.1

147.0

142.5

138.1

131.1

125.1

115.6

107.9

103.1

104.9

120.8

155.9

171.3

167.9

158.3

147.3

136.8

126.6

C6

200

350

6.0 + j8.0

9.0 + j11.9

11.0 + j14.1

13.3 + j15.9

15.4 + j17.5

18.5 + j20.0

21.7 + j22.0

27.4 + j24.2

33.7 + j24.2

39.1 + j21.6

42.6 + j16.1

42.6 + j9.9

38.8 + j4.3

31.9 + j2.3

24.8 + j4.0

19.5 + j8.2

15.4 + j13.4

12.6 + j18.7

10.9 + j24.2

5569 F05

450

575

Figure 5. LO Input Schematic

700

LO Input

900

1100

1400

1700

1950

2200

2450

2700

3000

3300

3600

3900

4200

4500

A simplified schematic of the LO input, with external

components is shown in Figure 5. Similar to the RF in-

put, the integrated LO transformer’s primary winding is

DC-groundedinternally,andthereforerequiresanexternal

DC-blocking capacitor. Capacitor C5 provides the neces-

sary DC-blocking, and optimizes the LO input match over

the 1GHz to 4GHz frequency range. The nominal LO input

level is 0dBm although the limiting amplifiers will deliver

excellent performance over a 5dB input power range. LO

input power greater than +6dBm may cause conduction

of the internal ESD diodes.

To optimize the LO input match for frequencies below

1GHz, the value of C5 is increased and shunt capacitor C6

is added. A summary of values for C5 and C6, versus LO

5567f

12

LTC5567

applicaTions inForMaTion

Table 3. LO Input Impedance and S11 (At Pin 15, No External

Matching, Mixer Enabled)

frequency range is listed in Table 2. Measured LO input

return losses are shown in Figure 6. Finally, LO input im-

pedance and input reflection coefficient, versus frequency

is shown in Table 3.

S11

FREQUENCY

(MHz)

INPUT

IMPEDANCE

MAG

0.83

0.81

0.80

0.78

0.75

0.67

0.58

0.33

0.11

0.13

0.23

0.29

0.35

0.38

ANGLE

146.5

141.7

137.0

132.7

123.6

106.0

89.5

350

400

5.2 + j14.9

6.0 + j17.3

6.6 + j19.5

7.2 + j21.5

9.1 + j26.5

15.1 + j35.7

24.9 + j43.6

67.5 + j36.4

61.7 – j4.2

40.3 – j7.1

31.7 + j1.8

29.8 + j12.3

31.5 + j22.9

36.0 + j32.4

Table 2. LO Input Matching Values vs LO Frequency Range

FREQUENCY (MHz)

285 to 392

C5 (pF)

330

56

C6 (pF)

33

450

500

338 to 415

22

600

415 to 505

18

800

525 to 635

27

10

1000

1500

2000

2500

3000

3500

4000

4500

645 to 803

15

7.5

2.7

—

47.1

800 to 1150

1000 to 4000

3000 to 4500

6.8

–18.3

–139.4

173.1

140.0

113.2

92.8

3.9

1.8

0.2

0

–5

0

–10

–15

–20

–25

T

= 25°C

C

C5 = 3.9pF

–2

–4

–6

–8

–10

–12

–14

–16

–18

T

= 25°C

C

DISABLED

ENABLED

0.2

0.7

1.2

1.7

2.2

2.7

3.2

3.7

4.2

4.7

FREQUENCY (GHz)

5567 F06

C5 = 27pF, C6 = 10pF

C5 = 6.8pF, C6 = 2.7pF

C5 = 3.9pF

C5 = 1.8pF, C6 = 0.2pF

0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7 4.2 4.7

FREQUENCY (GHz)

5567 F07

Figure 6. LO Input Return Loss

Figure 7. LO Input Return Loss—Mixer Enabled and Disabled

The LO buffers have been designed such that the LO input

impedance does not change significantly when the IC is

disabled. This feature only requires that supply voltage is

applied. The actual performance of this feature is shown

in Figure 7. As shown, the LO input return loss is better

than 10dB over the 1GHz to 4GHz frequency range when

the IC is enabled or disabled.

IF Output

The IF output schematic with external matching compo-

nents is shown in Figure 8. As shown, the output is dif-

ferential open collector. Each IF output pin must be biased

at the supply voltage (V ), which is applied through the

CC

externalmatchinginductors(L1andL2)showninFigure8.

Each pin draws approximately 27.5mA of DC supply cur-

rent (55mA total).

5567f

13

LTC5567

applicaTions inForMaTion

The differential IF output impedance can be modeled as a

frequency-dependentparallelR-Ccircuit, usingthevalues

listed in Table 4. This data is referenced to the package

pins (with no external components) and includes the

effects of the IC and package parasitics. Resistors R1

and R2 are used to reduce the output resistance, which

increases the IF bandwidth and input P1dB, but reduces

the conversion gain. The standard downmixer test circuit

shown in Figure 1 uses bandpass matching and 3.01k

resistors to realize a 400Ω differential output, followed by

an 8:1 transformer to get a 50Ω single-ended output. C7

and C8 are 330pF DC-blocking capacitors. The values of

L1 and L2 are calculated to resonate with the internal IF

measured 1dB (conversion gain) IF frequency range for

eachinductorvalueisshown.Theinductorvalueslistedare

less than the ideal calculated values due to the additional

capacitance of the 8:1 transformer. For differential IF out-

put applications where the 8:1 transformer is eliminated,

the ideal calculated values should be used. Measured IF

output return losses are shown in Figure 9.

Table 4. IF Output Impedance and Bandpass Matching Element

Values vs IF Frequency.

IF MATCHING USING TC8-1

DIFFERENTIAL IF

IF FREQUENCY OUTPUT IMPEDANCE

1dB IF FREQUENCY

RANGE (MHz)

(MHz)

(R ||C )

IF IF

L1, L2

390nH

300nH

210nH

120nH

51nH

140

532Ω||1.0pF

530Ω||1.0pF

525Ω||1.0pF

511Ω||1.0pF

500Ω||1.03pF

454Ω||1.07pF

364Ω||1.12pF

268Ω||1.24pF

209Ω||1.41pF

65 to 327

84 to 350

107 to 375

160 to 415

288 to 520

capacitance (C ) at the desired IF center frequency, using

153

IF

the following equation:

190

250

1

L1, L2=

380

2•π •f ²•2•C_IF

(

)

IF

500

1000

1500

2000

2500

For IF frequencies below 100MHz, the inductor values

become unreasonably high and the highpass impedance

matchingnetwork describedina latersection is preferred,

due to its lower inductor values.

T1

IF

OUT

0

50Ω

C7

C8

–5

L1

L2

–10

–15

V

CC

390nH

300nH

210nH

120nH

51nH

R1

R2

C2

10nF

–20

–25

–30

11

10

LTC5567

V

+

–

IF

T1 = TC8-1

R1, R2 = 3.01k

C7, C8 = 330pF

CC

50 100 150 200 250 300 350 400 450 500 550

5567 F09

FREQUENCY (MHz)

Figure 9. IF Output Return Loss—400Ω Bandpass

Matching with 8:1 Transformer

5567 F08

Wideband Differential IF Output

Figure 8. IF Output Schematic with External Matching

Wide IF bandwidth and high input 1dB compression are

obtainedbyreducingtheIFoutputresistancewithresistors

R1 and R2. This will reduce the mixer’s conversion gain,

but will not degrade the IIP3 or noise figure.

Table 4 summarizes the optimum IF matching inductor

values, versus IF center frequency, to be used in the

standard downmixer test circuit shown in Figure 1. The

5567f

14

LTC5567

applicaTions inForMaTion

The IF matching shown in Figure 10 uses 249Ω resistors

and 390nH supply chokes to produce a wideband 200Ω

differential output. This differential output is suitable for

driving a wideband differential amplifier, filter, or a wide-

band 4:1 transformer. The evaluation board layout allows

the removal of the IF transformer to evaluate the mixer

performance with a differential output.

Table 5. IF Bandwidth and 1dB Compression for 400Ω and

200Ω Differential IF Output Resistance (RF = 1.69 to 2.24GHz,

LO = 1.65GHz, V_CC= 3.3V, T_C= 25°C, L1, L2 = 390nH)

R

R1, R2

(Ω)

P1dB

(dBm)

1dB (CONVERSION GAIN)

IF FREQUENCY RANGE

OUT

(Ω)

400

200

3.01k

249

10.1

13.0

65MHz to 327MHz

45MHz to 580MHz

The complete test circuit, shown in Figure 11, uses re-

sistive impedance matching attenuators (L-pads) on the

evaluation board to transform each 100Ω IF output to

50Ω. An external 0°/180° power combiner is then used to

convert the 100Ω differential output to 50Ω single-ended,

to facilitate measurement.

Measured voltage conversion gain, IIP3 and SSB noise

figure, at the 200Ω differential output are plotted in Fig-

ure 12. Voltage gain, rather than power gain, is plotted

to emphasize the voltage gain due to the 200Ω output.

As shown, the conversion gain is flat within 1dB over the

45MHz to 590MHz IF output frequency range.

Table 5 compares the IF bandwidth and 1dB compression

for the standard 400Ω and wideband 200Ω IF output re-

sistances. As shown, the 200Ω matching doubles the IF

bandwidth, and increases the RF input P1dB to +13dBm.

28

26

IIP3

24

22 RF = 1.69GHz TO 2.24GHz

LO = 1.65GHz

20

Z

T

= 50Ω

RF

IF

C

18

16

14

12

10

8

= 200Ω DIFFERENTIAL

200Ω

= 25°C

330pF

LOAD

NF

249Ω

390nH

100Ω

LTC5567

+

–

IF

V

CC

G

V

6

IF

390nH

4

40 90 140 190 240 290 340 390 440 490 540 590

IF FREQUENCY (MHz)

5567 F10

5567 F12

330pF

Figure 12. Voltage Conversion Gain, IIP3 and NF vs IF

Output Frequency for Wideband 200Ω Differential IF

Figure 10. Wideband 200Ω Differential Output

LO

1.65GHz

L-PADS AND 180° COMBINER

FOR 50Ω SINGLE-ENDED MEASUREMENT

0dBm

3.9pF

+

IF

LO

LTC5567

330pF

50Ω

69.8Ω

71.5Ω

1MHz TO 500MHz

COMBINER

+

–

IF

2.7pF

LO

RF

1.69GHz

TO

249Ω

390nH

IF

0°

IF

OUT

180°

RF

EN

200Ω

50Ω

2.24GHz

–

IF

RF

390nH

50Ω

69.8Ω

71.5Ω

IF

EN

BIAS

330pF

V

IADJ

CC

10nF

3.3V

89mA

5567 F11

10nF

Figure 11. Test Circuit for Wideband 200Ω Differential Output

5567f

15

LTC5567

applicaTions inForMaTion

Highpass IF Matching

wideband test circuit, shown in Figure 11, was modified

with the following new element values, and re-tested.

By simply changing component values, the bandpass IF

output matching network can be changed to a highpass

impedance transforming network. This matching network

will drive a lower impedance differential load (or trans-

former), like the 200Ω wideband bandpass matching

previously described, while delivering higher conversion

gain, similar to the 400Ω bandpass matching. The high-

pass matching network will have less IF bandwidth than

the bandpass matching. It also uses smaller inductance

values;anadvantagewhendesigningforIFcenterfrequen-

cies well below 100MHz.

L1, L2 = 150nH

C7, C8 = 10pF

R1, R2 = 1.1k

Measured voltage conversion gain for the highpass and

wideband bandpass methods are shown in Figure 14, for

comparison. Both circuits are driving a 200Ω differential

load, but the highpass version delivers 2.3dB of additional

gain at 153MHz. Measured performance for both circuits

is summarized in Table 6. As shown, the highpass method

has less than half the IF bandwidth, and 3dB lower P1dB.

Referring to the small-signal output network schematic in

Figure 13, the reactive matching element values (L1, L2,

C7 and C8) are calculated using the following equations.

Table 6. Measured Performance Comparison for Highpass

and Wideband IF Matching (RF = 1950MHz, IF = 153MHz,

Low Side LO).

The source resistance (R ) is the parallel combination of

S

G

IIP3

P1dB

1dB (CONVERSION GAIN)

IF FREQUENCY RANGE

external resistors R1 + R2 and the internal IF resistance,

V

IF MATCHING (dB) (dBm) (dBm)

R taken from Table 4. The differential load resistance

IF

Highpass

Wideband

8.5

6.2

26.9

10.0

13.0

110MHz to 320MHz

45MHz to 590MHz

(R ) is typically 200Ω, but can be less. C , the IF output

L

IF

capacitance, is taken from Table 4. Choosing R in the

S

380Ω to 450Ω range will yield power conversion gains

9

8

7

around 2dB.

153MHz

HIGHPASS

R = R || 2·R1

(R1 = R2)

(R > R )

S

IF

6

5

4

WIDEBAND

BANDPASS

Q = √(R /R –1)

S

L

S

L

3

2

Y = Q/R + (ω • C )

L

S

IF

1

0

RF = 1.7GHz TO 2.2GHz

L1, L2 = 1/(2 • Y • ω )

L

IF

LO = 1.65GHz AT 0dBm

–1

–2

–3

–4

–5

Z

T

= 50Ω

RF

IF

C

C7, C8 = 2/(Q • R • ω )

= 200Ω DIFFERENTIAL

L

IF

= 25°C

C7

LTC5567

+

50 100 150 200 250 300 350 400 450 500 550

IF

IF FREQUENCY (MHz)

11

10

R1

R2

L1

L2

5567 F14

V

R

L

CC

R

C

IF

Figure 14. Voltage Conversion Gain versus IF Frequency

for 153MHz Highpass and Wideband Bandpass IF Matching

Networks

C8

–

IF

5567 F13

Mixer Bias Current Reduction

Figure 13. IF Output Circuit for Highpass Matching Element

Value Calculations

The IADJ pin (Pin 8) is available for reducing the mixer

core DC current consumption at the expense of linearity

and P1dB. For the highest performance, this pin should

be left open circuit. As shown in Figure 15, an internal

bias circuit produces a 3mA reference current for the

To demonstrate the highpass impedance transformer

output matching, these equations were used to calculate

the element values for a 153MHz IF frequency and 200Ω

differential load resistance. The output matching on the

mixer core. If a resistor is connected to Pin 8, as shown

5567f

16

LTC5567

applicaTions inForMaTion

I

CC

6

V

CC

LTC5567

V

CC

R3

L1

L2

34mA

CLAMP

500Ω

300k

8

11

10

6

EN

+

–

IADJ

IF

V

CC

4

EN

CMOS

V

CC

3mA

BIAS

5567 F16

55mA

BIAS

Figure 16. Enable Input Circuit

LTC5567

The EN pin has an internal 300k pull-down resistor.

Therefore, the mixer will be disabled with the enable pin

left floating.

5567 F12

Figure 15. IADJ Interface

Supply Voltage Ramping

in Figure 15, a portion of the reference current can be

shunted to ground, resulting in reduced mixer core cur-

rent. For example, R3 = 1k will shunt away 1mA from Pin

8 and reduce the mixer core current by 33%. The nominal,

open-circuit DC voltage at the IADJ pin is 2.2V. Table 7

lists DC supply current and RF performance at 1950MHz

for various values of R3.

Fast ramping of the supply voltage can cause a current

glitch in the internal ESD clamp circuits connected to the

CC

result in a supply voltage transient that exceeds the 4.0V

maximum rating. A supply voltage ramp time greater than

1ms is recommended.

V

pin. Depending on the supply inductance, this could

Spurious Output Levels

Table 7. Mixer Performance with Reduced Current

(RF = 1950MHz, Low Side LO, IF = 153MHz)

Mixer spurious output levels versus harmonics of the

RF and LO are tabulated in Table 8. The spur levels were

measured on a standard evaluation board using the test

circuit shown in Figure 1. The spur frequencies can be

calculated using the following equation:

IIP3

P1dB

R3 (Ω)

Open

10k

I

(mA)

G (dB)

(dBm)

NF (dB)

11.8

CC

C

89.0

1.9

1.6

1.3

1.0

26.9

25.7

21.4

19.3

17.9

10.2

10.1

9.5

84.6

70.4

62.9

58.3

11.5

1k

10.5

f

= (M • f ) – (N • f )

RF LO

SPUR

330

10.3

100

8.5

10.1

Table 8. IF Output Spur Levels (dBm)

(RF = 1950MHz, P_RF= –2dBm, P_IF= 0dBm at 153MHz, Low Side

LO, P_LO= 0dBm, V_CC= 3.3V, T_C= 25°C)

Enable Interface

N

4

Figure 16 shows a simplified schematic of the enable

interface. To enable the mixer, the EN voltage must be

higher than 2.5V. If the enable function is not required,

0

1

2

3

5

6

7

8

9

0

1

2

3

4

5

6

7

–43 –24 –47 –30 –57 –46 –64 –50 –81

–56 –57 –59 –37 –69 –47 –78 –58

–60 –56 –67 –68 –72 –78 –78 –85 –87

–30

0

the pin should be connected directly to V . The volt-

CC

*

age at the EN pin should never exceed the power supply

*

–81 –89

*

–90

*

M

voltage (V ) by more than 0.3V. If this should occur, the

CC

*

–73

*

supply current could be sourced through the ESD diode,

potentially damaging the IC.

*Less than –90dBc

5567f

17

LTC5567

Typical applicaTions

300MHz RF Application with 70MHz Highpass IF Matching

22pF

LO

IN

50Ω

370MHz ±±0MHz

330pF

LO

LTC5567

22pF

TC±-1W

±:1

+

IF

OUT

120pF

LO

RF

1.1k

390nH

IN

50Ω

3.3nH

22pF

50Ω

70MHz NOM

300MHz ±±0MHz

RF

390nH

22pF

TYPICAL PERFORMANCE

(RF = 300MHz, IF = 70MHz, LO = 370MHz AT 0dBm)

–

G

C

= 0.6dB

IF

IIP3 = 26.3dBm

EN

BIAS

EN

SSB NF = 13.3dB

V

IADJ

CC

INPUT P1dB = 10.9dBm

10nF

3.3V

89mA

5567 TA03a

10nF

Conversion Gain, IIP3 and NF

vs RF Frequency

RF Isolation and LO leakage vs

RF and LO Frequency

RF, LO and IF Port Return Losses

10

5

28

26

24

22

20

18

16

14

12

10

8

70

0

IIP3

65

60

55

–10

–20

–30

RF-LO

HIGH SIDE LO

= 0dBm

0

P

LO

–5

IF = 70MHz

= 25°C

T

C

RF-IF

–10

–15

–20

–25

–30

–35

–40

LO-IF

IF

50

45

–40

–50

NF

LO

6

4

2

0

RF

40

35

30

–60

–70

–80

LO-RF

G

C

–2

50 100 150 200 250 300 350 400 450

260 280 300 320 340 360 380 400

260

300

340

380

420

460

5567 TA03d

FREQUENCY (MHz)

RF FREQUENCY (MHz)

RF/LO FREQUENCY (MHz)

5567 TA03b

5567 TA03c

5567f

18

LTC5567

package DescripTion

Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.

UF Package

16-Lead Plastic QFN (4mm × 4mm)

(Reference LTC DWG # 05-08-1692 Rev Ø)

0.72 ±0.05

4.35 ±0.05

2.90 ±0.05

2.15 ±0.05

(4 SIDES)

PACKAGE OUTLINE

0.30 ±0.05

0.65 BSC

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

BOTTOM VIEW—EXPOSED PAD

PIN 1 NOTCH R = 0.20 TYP

OR 0.35 × 45° CHAMFER

0.75 ±0.05

R = 0.115

TYP

4.00 ±0.10

(4 SIDES)

15

16

0.55 ±0.20

PIN 1

TOP MARK

(NOTE 6)

1

2

2.15 ±0.10

(4-SIDES)

(UF16) QFN 10-04

0.200 REF

0.30 ±0.05

0.65 BSC

0.00 – 0.05

NOTE:

1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)

2. DRAWING NOT TO SCALE

3. ALL DIMENSIONS ARE IN MILLIMETERS

4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE

MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE

5. EXPOSED PAD SHALL BE SOLDER PLATED

6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION

ON THE TOP AND BOTTOM OF PACKAGE

5567f

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-

tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

19

LTC5567

Typical applicaTion

CATV Downconverting Mixer with 1GHz IF Bandwidth

LO

IN

3.9pF

1200MHz

TO 2150MHz

50Ω

Conversion Gain, OIP3 and 2RF-LO

Spur vs IF Output Frequency

16

15

14

NC GND

LTC5567

13

30

27

24

21

18

15

12

9

0

12

11

GND

GND LO

OIP3

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

–110

15nH

402Ω

68nH

+

IF

RF = 1150MHz

1

2

TEMP

GND

MABACT0066

T1

P

= –6dBm

RF

HIGH SIDE LO

= 0dBm

1nF

P

T

LO

= 25°C

C

17

GND

IF

OUT

10pF

10nF

50MHz TO

1000MHz

50Ω

68nH

402Ω

RF

IN

1150MHz

50Ω

2RF-LO

6

3

4

RF

1.8pF

3

G

C

GND

0

–

10

9

IF

–3

15nH

0

200

400

600

800

1000

V

GND

NC IADJ

EN

5

CC

IF OUTPUT FREQUENCY (MHz)

6

7

8

5567 TA02b

V

CC

EN

3.0V TO 3.6V

1µF

10V

10nF

220nF

5567 TA02a

relaTeD parTs

PART NUMBER DESCRIPTION

Infrastructure

COMMENTS

2.3dB Gain, 23.5dBm IIP3 and 12.5dB NF at 1900MHz, 5V/78mA Supply

2.9dB Gain, 24.7dBm IIP3 and 11.7dB NF at 1950MHz, 3.3V/82mA Supply

8.5dB Gain, 26.5dBm IIP3, 9.9dB NF, 3.3V/380mA Supply

LT^®5527

LT5557

400MHz to 3.7GHz, 5V Downconverting Mixer

400MHz to 3.8GHz, 3.3V Downconverting Mixer

LTC559x

600MHz to 4.5GHz Dual Downconverting Mixer

Family

LTC5569

300MHz to 4GHz, 3.3V Dual Active

Downconverting Mixer

2dB Gain, 26.8dBm IIP3 and 11.7dB NF, 3.3V/180mA Supply

LTC554x

LTC6400-X

LTC6416

LTC6412

LT5554

LT5578

LT5579

LTC5588-1

LTC5585

600MHz to 4GHz, 5V Downconverting Mixer Family 8dBm Gain, >25dBm IIP3 and 10dB NF, 3.3V/200mA Supply

300MHz Low Distortion IF Amp/ADC Driver

2GHz 16-Bit ADC Buffer

31dB Linear Analog VGA

Fixed Gain of 8dB, 14dB, 20dB and 26dB; >36dBm OIP3 at 300MHz, Differential I/O

40dBm OIP3 to 300MHz, Programmable Fast Recovery Output Clamping

35dBm OIP3 at 240MHz, Continuous Gain Range –14dB to 17dB

Ultralow Distort IF Digital VGA

48dBm OIP3 at 200MHz, 2dB to 18dB Gain Range, 0.125dB Gain Steps

27dBm OIP3 at 900MHz, 24.2dBm at 1.95GHz, Integrated RF Transformer

27.3dBm OIP3 at 2.14GHz, NF = 9.9dB, 3.3V Supply, Single-Ended LO and RF Ports

31dBm OIP3 at 2.14GHz, –160.6dBm/Hz Noise Floor

400MHz to 2.7GHz Upconverting Mixer

1.5GHz to 3.8GHz Upconverting Mixer

200MHz to 6GHz I/Q Modulator

700MHz to 3GHz Wideband I/Q Demodulator

>530MHz Demodulation Bandwidth, IIP2 Tunable to >80dBm, DC Offset Nulling

RF Power Detectors

LT5538

LT5581

LTC5582

LTC5583

ADCs

40MHz to 3.8GHz Log Detector

0.8dB Accuracy Over Temperature, –72dBm Sensitivity, 75dB Dynamic Range

40dB Dynamic Range, 1dB Accuracy Over Temperature, 1.5mA Supply Current

0.5dB Accuracy Over Temperature, 0.2dB Linearity Error, 57dB Dynamic Range

Up to 60dB Dynamic Range, 0.5dB Accuracy Over Temperature, >50dB Isolation

6GHz Low Power RMS Detector

40MHz to 10GHz RMS Detector

Dual 6GHz RMS Power Detector

LTC2208

LTC2153-14

16-Bit, 130Msps ADC

14-Bit, 310Msps Low Power ADC

78dBFS Noise Floor, >83dB SFDR at 250MHz

68.8dBFS SNR, 88dB SFDR, 401mW Power Consumption

5567f

LT 0412 • PRINTED IN USA

20 ^{LinearTechnology Corporation}

1630 McCarthy Blvd., Milpitas, CA 95035-7417

●

 LINEAR TECHNOLOGY CORPORATION 2012

(408) 432-1900 FAX: (408) 434-0507 www.linear.com


型号：	LTC559X
厂家：	Linear
描述：	300MHz to 4GHz Active Downconverting Mixer 300MHz至4GHz的活动下变频混频器
文件：	总20页 (文件大小：355K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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