LTC4555EUD-TRPBF [Linear]
SIM Power Supply and Level Translator; SIM电源和电平转换器
| 型号： | LTC4555EUD-TRPBF |
| 厂家： | 
Linear |
| 描述： | SIM Power Supply and Level Translator |
| 文件： | 总8页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC4555
SIM Power Supply
and Level Translator
FEATURES
DESCRIPTION
The LTC®4555 provides power conversion and signal
level shifting needed for low voltage 2.5G and 3G cellular
telephones to interface with 1.8V or 3V subscriber identity
modules (SIMs). The part meets all type approval require-
ments for 1.8V and 3V SIMs and smart cards. The part
contains an LDO linear regulator to supply SIM power at
either 1.8V or 3V from a 3V to 6V input. The output volt-
age is selected with a single pin and up to 50mA of load
current can be supplied.
n
SIM Power Supply: 1.8V/3V at 50mA
n
Input Voltage Range: 3V to 6V
n
Controller Voltage Range: 1.2V to 4.4V
14kV ESD On All SIM Contact Pins
n
n
Meets All ETSI, IMT-2000 and ISO7816 SIM/Smart
Card Interface Requirements
n
Level Translators to 1.8V or 3V
n
20μA Operating Current
n
Logic-Controlled Shutdown (I < 1μA)
SD
n
Available in a Low Profile, 16-Pin (3mm × 3mm)
Internal level translators allow controllers operating with
supplies as low as 1.2V to interface with 1.8V or 3V smart
cards. Battery life is maximized by 20μA operating current
and <1μA shutdown current. Board area is minimized by
the 3mm × 3mm leadless QFN package.
QFN Package
APPLICATIONS
n
SIM Interface in 3G Cellular Telephones
Smart Card Readers
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
n
TYPICAL APPLICATION
Typical SIM Interface
V
BAT
(1.2V TO 4.4V) (3V TO 6V)
V
CC
SIM/
SMART CARD
INTERFACE
0.1μF
0.1μF
DV
V
CC
BAT
SHDN
V
CC
V
CC
V
1μF
CONTROLLER
SEL
LTC4555
GND
R
RST
CLK
I/0
RST
CLK
I/0
IN
C
IN
DATA
GND
4555 TA01
4555fb
1
LTC4555
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATION
(Note 1)
TOP VIEW
V
, DV , V to GND............................ –0.3V to 6.5V
BAT CC CC
Digital Inputs to GND................................ –0.3V to 6.5V
CLK, RST, I/O to GND.......................–0.3V to V + 0.3V
CC
Operating Temperature Range (Note 2).... –40°C to 85°C
Junction Temperature ........................................... 125°C
Storage Temperature Range................... –65°C to 125°C
16 15 14 13
CC
SHDN
1
2
3
4
12 NC
V
Short-Circuit Duration...................................Infinite
V
SEL
11 CLK
17
DV
GND
RST
10
9
CC
NC
5
6
7
8
UD PACKAGE
16-LEAD (3mm s 3mm) PLASTIC QFN
T
= 125°C, θ = 68°C/W, θ = 4.2°C/W
JA JC
JMAX
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
16-Lead (3mm × 3mm) Plastic QFN
TEMPERATURE RANGE
–40°C to 85°C
LTC4555EUD#PBF
LTC4555EUD#TRPBF
LAAA
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C.
PARAMETER
CONDITIONS
MIN
TYP
MAX
6
UNITS
V
l
l
l
l
l
l
l
V
BAT
V
BAT
V
BAT
Operating Voltage
Operating Current
Shutdown Current
3
I
CC
= 0mA
20
30
1
μA
μA
V
SHDN = 0V, V = 4.5V
BAT
DV Operating Voltage
CC
1.2
0.5
4.4
10
1
DV Operating Current
CC
f
= 1MHz
CLK
5
μA
μA
V
DV Shutdown Current
CC
SHDN = 0V
DV Undervoltage Lockout
CC
1.1
V
CC
Output Voltage
V
V
V
= DV , V = 3V, I = 50mA
VCC
2.8
3.0
1.8
V
V
V
SEL
SEL
SEL
CC BAT
l
l
= DV , V = 3.3V to 6V, I
= 0mA to 50mA
2.8
1.7
3.2
1.9
CC BAT
VCC
= 0, V = 2.6V to 6V, I
= 0mA to 50mA
BAT
VCC
V
CC
Short-Circuit Current
V
CC
Shorted to GND
60
110
175
mA
Controller Inputs/Outputs
Input Voltage Range
SHDN, V , R , C , DATA
0
DV
V
nA
V
SEL IN IN
CC
l
l
l
l
l
Input Current (I /I )
SHDN, V , R , C
–100
100
IH IL
SEL IN IN
High Input Threshold Voltage (V )
R , C
IN IN
0.7 × DV
IH
CC
Low Input Threshold Voltage (V )
R , C
IN IN
V
0.2 × DV
IL
CC
High Input Threshold Voltage (V )
SHDN, V
SHDN, V
1
V
IH
SEL
SEL
Low Input Threshold Voltage (V )
0.4
V
IL
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2
LTC4555
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C.
PARAMETER
High Level Input Current (I )
CONDITIONS
DATA
MIN
TYP
MAX
20
UNITS
μA
l
l
l
l
–20
IH
Low Level Input Current (I )
DATA
1
mA
V
IL
High Level Output Voltage (V
)
DATA I = 20μA, I/O = V
0.7 × DV
13
OH
OH
CC
CC
Low Level Output Voltage (V
DATA Pull-Up Resistance
)
DATA I = –200μA, I/O = 0V
0.4
30
V
OL
OL
Between DATA and DV
20
kΩ
CC
SIM Inputs/Outputs (V = 3V)
CC
l
l
l
l
High Level Output Voltage (V
)
)
I/O, I = 20μA, DATA = DV
CC
V
V
0.8 × V
OH
OH
CC
Low Level Output Voltage (V
I/O, I = –1mA, DATA = 0V
0.4
OL
OL
High Level Output Voltage (V
)
OH
RST, CLK, I = 20μA
V
0.9 × V
6.5
OH
CC
Low Level Output Voltage (V
I/O Pull-Up Resistance
)
OL
RST, CLK, I = –200μA
0.4
14
V
OL
Between I/O and V
10
10
kΩ
CC
SIM Inputs/Outputs (V = 1.8V)
CC
l
l
l
l
High Level Output Voltage (V
)
)
I/O, I = 20μA, DATA = DV
CC
V
V
0.8 × V
0.9 × V
6.5
OH
OH
CC
Low Level Output Voltage (V
I/O, I = –1mA, DATA = 0V
0.3
OL
OL
High Level Output Voltage (V
Low Level Output Voltage (V
)
OH
RST, CLK, I = 20μA
V
OH
CC
)
OL
RST, CLK, I = –200μA
V
0.2 × V
OL
CC
I/O Pull-Up Resistance
SIM Timing Parameters
CLK Rise/Fall Time
Between I/O and V
14
kΩ
CC
l
l
C
CLK
= 30pF, V = 1.8V/3V
18
1
ns
μs
CC
RST, I/O Rise/Fall Time
Max CLK Frequency
RST, I/O Loaded with 30pF, V = 1.8V/3V
CC
5
MHz
ms
V
CC
V
CC
Turn-On Time
SHDN = 1, (Note 3)
SHDN = 0, (Note 3)
0.5
0.5
Discharge Time to 1V
ms
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 3: Specification is guaranteed by design and not 100% tested in
production.
Note 2: The LTC4555E is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
4555fb
3
LTC4555
TYPICAL PERFORMANCE CHARACTERISTICS
VCC Short-Circuit Current
IBAT vs VBAT
22
170
150
130
110
90
V
= 3V
CC
T
= –40°C
20
18
16
14
12
10
A
T
= 25°C
A
T
= 85°C
A
T
= –40°C
A
T
= 25°C
A
T
= 85°C
A
V
= 1.8V
CC
70
50
4.5
(V)
5.5
6.0
40
TEMPERATURE (°C)
80 100
2.5 3.0
3.5 4.0
V
5.0
–40 –20
0
20
60
BAT
4555 G02
4555 G01
PIN FUNCTIONS
SHDN (Pin 1): Controller Driven Shutdown Pin. This pin
RST (Pin 9): Reset Output Pin for the SIM Card.
should be high (DV ) for normal operation and low to
CC
GND (Pin 10): Ground for the SIM and Controller. Proper
grounding and bypassing is required to meet 14kV ESD
specifications.
activate a low current shutdown mode.
V
(Pin2):V VoltageSelectPin.AlowlevelselectsV
CC CC
SEL
= 1.8V while driving this pin to DV selects V = 3V.
CC
CC
CLK (Pin 11): Clock Output Pin for the SIM Card. This
pin is pulled to ground during shutdown. Fast rising and
falling edges necessitate careful board layout for the CLK
node.
DV (Pin 3): Supply Voltage for the Controller Side I/O
CC
Pins (C , R , DATA). When below 1.1V, the V supply
IN IN
CC
is disabled. This pin should be bypassed with a 0.1μF
ceramic capacitor close to the pin.
C (Pin 13): Clock Input from the Controller.
IN
NC (Pins 4, 6, 12, 16): No Connect.
R (Pin 14): Reset Input from the Controller.
IN
V
(Pin 5): V Supply Input. This pin can be between
CC
BAT
DATA (Pin 15): Controller Side Data I/O. This pin is used
for bidirectional data transfer. The controller output must
be an open-drain configuration. The open-drain output
must be capable of sinking greater than 1mA.
3V and 6V for normal operation. V
quiescent current
BAT
reducesto<1μAinshutdown.Thispinshouldbebypassed
with a 0.1μF ceramic capacitor close to the pin.
V
(Pin7):SIMCardV Supply.A1μFlowESRcapacitor
CC
CC
Exposed Pad (Pin 17): GND. Must be soldered to PCB.
needstobeconnectedclosetotheV pinforstableopera-
CC
tion. This pin is discharged to GND during shutdown.
I/O (Pin 8): SIM-Side Data I/O. The SIM card output must
be on an open-drain driver capable of sourcing >1mA.
4555fb
4
LTC4555
BLOCK DIAGRAM
V
BAT
(3V TO 6V)
PROCESSOR
V
CC
C2
0.1μF
3
5
C3
0.1μF
DV
CC
V
BAT
V
CC
SHDN
1.8V/3V
AT 50mA
SHUTDOWN
PIN
7
1
50mA LDO
V
SIM
V
SEL
C1
1μF
VOLTAGE
SELECT
2
RESET
FROM
R
C
RST
CLK
I/0
IN
9
11
8
14
13
15
RESET
CLOCK
PROCESSOR
CLOCK
FROM
PROCESSOR
IN
20k
10k
DATA
DATA TO/
FROM SIM
BIDIRECTIONAL
I/O
CELL PHONE
PROCESSOR
INTERFACE
SIM/
SMART CARD
INTERFACE
LTC4555
GND
10
4555 BD
4555fb
5
LTC4555
APPLICATIONS INFORMATION
The LTC4555 provides both regulated power and internal
leveltranslatorstoallowlowvoltagecontrollerstointerface
with 1.8V or 3V SIMs or smart cards. The part meets all
ETSI, IMT-2000 and ISO7816 requirements for SIM and
smart card interfaces.
provides level translators to allow controllers to com-
municate with the SIM. The CLK and RST lines to the
SIM are level shifted from the controller supply (GND to
DV ) to the SIM supply (GND to V ). The data input to
CC
CC
the SIM requires an open-drain output on the controller.
On-chip pull-up resistors are provided for both the DATA
and I/O lines.
V
Voltage Regulator
CC
The V voltage regulator is a 50mA low dropout (LDO)
CC
Shutdown Modes
regulator with a digitally selected 1.8V or 3V output.
The LTC4555 enters a low current shutdown mode by
pulling the SHDN pin low. The SHDN pin is an active low
input that the controller can use to directly shut down
the part.
The output voltage is selected via the V pin. The output
SEL
is internally current limited and is capable of surviving an
indefinite short to GND.
The V output should be bypassed with a 1μF capacitor.
CC
The LTC4555 can use either a low ESR ceramic capacitor
ESD Protection
or a tantalum electrolytic capacitor on the V pin, with
CC
All pins that connect to the SIM/smart card will withstand
14kV of human body model ESD. In order to ensure
proper ESD protection, careful board layout is required.
The GND pin should be tied directly to a GND plane. The
no special ESR requirements.
V
BAT
should be bypassed with a 0.1μF ceramic capacitor.
Level Translators
V
capacitor should be located very close to the V pin
CC
CC
and tied directly to the GND plane.
All SIMs and smart cards contain a clock input, a reset
input and a bidirectional data input/output. The LTC4555
4555fb
6
LTC4555
PACKAGE DESCRIPTION
UD Package
16-Lead Plastic QFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1691)
0.70 p0.05
3.50 p 0.05
2.10 p 0.05
1.45 p 0.05
(4 SIDES)
PACKAGE OUTLINE
0.25 p0.05
0.50 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
PIN 1 NOTCH R = 0.20 TYP
OR 0.25 s 45o CHAMFER
R = 0.115
TYP
0.75 p 0.05
3.00 p 0.10
(4 SIDES)
15 16
PIN 1
TOP MARK
(NOTE 6)
0.40 p 0.10
1
2
1.45 p 0.10
(4-SIDES)
(UD16) QFN 0904
0.200 REF
0.25 p 0.05
0.00 – 0.05
0.50 BSC
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WEED-2)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
4555fb
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
7
LTC4555
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PART NUMBER
DESCRIPTION
COMMENTS
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50mA, 650kHz, Step-Up/Down Charge Pump with
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V
= 2.7V to 10V, V
= 3V/5V, I = 60μA, I = 10μA, S8 Package
Q SD
IN
OUT
OUT
OUT
LTC1515
50mA, 650kHz, Step-Up/Down Charge Pump with
Power-On Reset
V
= 2.7V to 10V, V
= 3.3V or 5V, I = 60μA, I < 1μA,
Q SD
IN
S8 Package
= 2.7V to 10V, V
LTC1555/LTC1556
LTC1555L
650kHz,SIM Power Supply and Level Translator for 3V/5V
SIM Cards
V
= 3V/5V, I = 60μA, I < 1μA,
Q SD
IN
SSOP-16, SSOP-20 Packages
1MHz, SIM Power Supply and Level Translator for 3V/5V
SIM Cards
V
= 2.6V to 6.6V, V
= 3V/5V, I = 40μA, I < 1μA,
Q SD
IN
OUT
OUT
SSOP-16 Package
LTC1555L-1.8
LTC1755/LTC1756
LTC1955
1MHz, SIM Power Supply and Level Translator for 1.8V/3V/5V
SIM Cards
V
= 2.6V to 6.6V, V
= 1.8V/3V/5V, I = 32μA, I < 1μA,
Q SD
IN
SSOP-16
Smart Card Interface with Serial Control for 3V/5V Smart Card V = 2.7V to 7V, V
Applications
= 3V/5V, I = 60μA, I < 1μA,
Q SD
IN
OUT
SSOP-16, SSOP-24
= 3V to 6V, V = 1.8V/3V, I = 200μA, I < 1μA,
OUT Q SD
Dual Smart Card Interface with Serial Control for 1.8V/3V/5V
Smart Card Applications
V
IN
QFN-32 Package
LTC1986
900kHz, SIM Power Supply for 3V/5V SIM Cards
V
= 2.6V to 4.4V, V
= 3V/5V, I = 14μA, I < 1μA,
OUT Q SD
IN
™
ThinSOT Package
LTC3250-1.5
LTC3251
250mA,1.5MHz, High Efficiency Step-Down Charge Pump
85% Efficiency, V = 3.1V to 5.5V, V
SD
= 1.5V, I = 35μA,
Q
IN
OUT
OUT
I
< 1μA, ThinSOT Package
500mA,1MHz to 16MHz, Spread Spectrum, Step-Down
Charge Pump
85% Efficiency, V = 3.1V to 5.5V, V
= 0.9V to 1.6V, I = 9μA,
Q
IN
I
< 1μA, MS Package
SD
ThinSOT is a trademark of Linear Technology Corporation.
4555fb
LT 0109 REV B • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
8
●
●
© LINEAR TECHNOLOGY CORPORATION 2001
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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