LT1113AC [Linear]
Dual Low Noise, Precision, JFET Input Op Amps; 双路低噪声，高精度， JFET输入运算放大器
| 型号： | LT1113AC |
| 厂家： | 
Linear |
| 描述： | Dual Low Noise, Precision, JFET Input Op Amps |
| 文件： | 总16页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT1113
Dual Low Noise,
Precision, JFET Input Op Amps
U
FEATURES
DESCRIPTIO
TheLT®1113achievesanewstandardofexcellenceinnoise
performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz
noise combined with low current noise and picoampere
bias currents makes the LT1113 an ideal choice for ampli-
fying low level signals from high impedance capacitive
transducers.
■
100% Tested Low Voltage Noise: 6nV/√Hz Max
■
SO-8 Package Standard Pinout
■
Voltage Gain: 1.2 Million Min
■
Offset Voltage: 1.5mV Max
■
Offset Voltage Drift: 15µV/°C Max
■
Input Bias Current, Warmed Up: 450pA Max
■
Gain Bandwidth Product: 5.6MHz Typ
TheLT1113isunconditionallystableforgainsof1ormore,
even with load capacitances up to 1000pF. Other key fea-
tures are 0.4mV VOS and a voltage gain of 4 million. Each
individual amplifier is 100% tested for voltage noise, slew
rate and gain bandwidth.
■
Guaranteed Specifications with ±5V Supplies
■
Guaranteed Matching Specifications
U
APPLICATIO S
■
Photocurrent Amplifiers
The design of the LT1113 has been optimized to achieve
true precision performance with an industry standard
pinout in the S0-8 package. A set of specifications are
providedfor±5Vsuppliesandafullsetofmatchingspeci-
fications are provided to facilitate the use of the LT1113 in
matching dependent applications such as instrumenta-
tion amplifier front ends.
■
Hydrophone Amplifiers
■
High Sensitivity Piezoelectric Accelerometers
■
Low Voltage and Current Noise Instrumentation
Amplifier Front Ends
■
Two and Three Op Amp Instrumentation Amplifiers
■
Active Filters
, LTC and LT are registered trademarks of Linear Technology Corporation.
U
TYPICAL APPLICATIO
Low Noise Hydrophone Amplifier with DC Servo
1kHz Input Noise Voltage Distribution
5V TO 15V
8
R3
V
= ±15V
= 25°C
R1*
S
A
40
30
20
10
0
3.9k
T
100M
–
2
3
138 S8
276 OP AMPS TESTED
1
1/2
OUTPUT
LT1113
+
C2
C1*
R2
4
0.47µF
200Ω
–5V TO –15V
R4
1M
R8
–
+
6
5
C
T
R6
100k
100M
HYDRO-
PHONE
7
1/2
LT1113
R5
1M
R7
1M
3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8
INPUT VOLTAGE NOISE (nV/√Hz)
DC OUTPUT ≤ 2.5mV FOR T < 70°C
A
1113 TA02
OUTPUT VOLTAGE NOISE = 128nV/√Hz AT 1kHz (GAIN = 20)
C1 ≈ C ≈ 100pF TO 5000pF; R4C2 > R8C ; *OPTIONAL
1113 TA01
T
T
1
LT1113
W W W
U
(Note 1)
ABSOLUTE AXI U RATI GS
Supply Voltage
Operating Temperature Range
–55°C to 105°C ............................................... ±20V
105°C to 125°C ............................................... ±16V
Differential Input Voltage ...................................... ±40V
Input Voltage (Equal to Supply Voltage)............... ±20V
Output Short Circuit Duration .......................... 1 Minute
Storage Temperature Range ................ –65°C to 150°C
LT1113AC/LT1113C (Note 2) .......... –40°C to 85°C
LT1113AM/LT1113M .................... –55°C to 125°C
Specified Temperature Range
LT1113AC/LT1113C (Note 3) .......... –40°C to 85°C
LT1113AM/LT1113M .................... –55°C to 125°C
Lead Temperature (Soldering, 10 sec) ................ 300°C
W
U
/O
PACKAGE RDER I FOR ATIO
TOP VIEW
ORDER PART
ORDER PART
TOP VIEW
NUMBER
NUMBER
+
OUT A
–IN A
+IN A
1
2
3
4
V
8
7
6
5
+
OUT A
–IN A
+IN A
1
2
3
4
8
7
6
5
V
OUT B
–IN B
+IN B
OUT B
–IN B
+IN B
LT1113AMJ8
LT1113MJ8
LT1113ACN8
LT1113CN8
A
LT1113CS8
A
B
–
B
V
–
V
S8 PART MARKING
1113
J8 PACKAGE
N8 PACKAGE
S8 PACKAGE
8-LEAD PLASTIC SO
8-LEAD CERDIP 8-LEAD PDIP
TJMAX = 160°C, θJA = 100°C/W (J8)
TJMAX = 150°C, θJA = 130°C/W (N8)
TJMAX = 150°C, θJA = 190°C/W
Consult factory for Industrial grade parts.
VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
LT1113AM/AC
TYP
LT1113M/C
TYP MAX
SYMBOL PARAMETER
CONDITIONS (Note 4)
MIN
MAX
MIN
UNITS
V
Input Offset Voltage
0.40
0.45
1.5
1.7
0.50
0.55
1.8
2.0
mV
mV
OS
V = ±5V
S
I
I
Input Offset Current
Input Bias Current
Warmed Up (Note 5)
Warmed Up (Note 5)
0.1Hz to 10Hz
30
300
2.4
100
450
35
320
2.4
150
480
pA
pA
OS
B
e
Input Noise Voltage
Input Noise Voltage Density
µV
P-P
n
f = 10Hz
17
4.5
17
4.5
nV/√Hz
nV/√Hz
O
f = 1000Hz
O
6.0
6.0
i
Input Noise Current Density
f = 10Hz, f = 1000Hz (Note 6)
10
10
fA/√Hz
n
O
O
R
Input Resistance
Differential Mode
Common Mode
IN
11
11
10
10
Ω
Ω
Ω
11
11
V
V
= –10V to 8V
= 8V to 11V
10
10
CM
CM
10
10
10
10
C
V
Input Capacitance
14
27
14
27
pF
pF
IN
V = ±5V
S
Input Voltage Range (Note 7)
13.0
13.5
–10.5 –11.0
13.0
13.5
–10.5 –11.0
V
V
CM
CMRR
PSRR
Common Mode Rejection Ratio
V
= –10V to 13V
85
86
98
82
83
95
98
dB
dB
CM
Power Supply Rejection Ratio V = ±4.5V to ± 20V
100
S
A
Large-Signal Voltage Gain
V = ±12V, R = 10k
1200
600
4800
4000
1000 4500
500 3000
V/mV
V/mV
VOL
O
L
V = ±10V, R = 1k
O
L
2
LT1113
VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
LT1113AM/AC
LT1113M/C
TYP
SYMBOL PARAMETER
CONDITIONS
R = 10k
MIN
TYP
MAX
MIN
MAX
UNITS
V
Output Voltage Swing
±13.5 ±13.8
±12.0 ±13.0
±13.0 ±13.8
±11.5 ±13.0
V
V
OUT
L
R = 1k
L
SR
Slew Rate
R ≥ 2k (Note 9)
2.3
4.0
3.9
5.6
4.2
2.3
4.0
3.9
5.6
4.2
V/µs
MHz
µs
L
GBW
Gain Bandwidth Product
Settling Time
f = 100kHz
O
t
0.01%, A = +1, R = 1k,
V L
S
C ≤ 1000pF, 10V Step
L
Channel Separation
f = 10Hz, V = ±10V, R = 1k
130
126
dB
O
O
L
I
Supply Current per Amplifier
5.3
5.3
6.25
6.20
5.3
5.3
6.50
6.45
mA
mA
S
V = ±5V
S
∆V
Offset Voltage Match
0.8
10
94
95
2.5
80
0.8
10
94
95
3.3
mV
pA
dB
dB
OS
+
∆I
Noninverting Bias Current Match Warmed Up (Note 5)
120
B
∆CMRR Common Mode Rejection Match (Note 11)
∆PSRR Power Supply Rejection Match (Note 11)
81
82
78
80
The ● denotes specifications which apply over the temperature range 0°C ≤ TA ≤ 70°C. VS = ±15V, VCM = 0V,
unless otherwise noted. (Note 12)
LT1113AC
TYP
LT1113C
TYP
SYMBOL PARAMETER
CONDITIONS (Note 4)
MIN
MAX
MIN
MAX
UNITS
V
Input Offset Voltage
●
●
0.6
0.7
2.1
2.3
0.7
0.8
2.5
2.7
mV
mV
OS
V = ±5V
S
∆V
∆Temp
Average Input Offset
Voltage Drift
(Note 8)
●
7
15
8
20
µV/°C
OS
I
I
Input Offset Current
●
●
50
350
55
450
pA
pA
OS
B
Input Bias Current
600
1200
700
1600
V
Input Voltage Range
●
●
12.9
13.4
12.9
13.4
V
V
CM
–10.0 –10.8
–10.0 –10.8
CMRR
PSRR
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
V
= –10V to 12.9V
●
●
81
83
97
99
79
81
94
97
dB
dB
CM
V = ±4.5V to ±20V
S
A
V = ±12V, R = 10k
V = ±10V, R = 1k
●
●
900
500
3600
2600
800
400
3400
2400
V/mV
V/mV
VOL
O
L
O
L
V
Output Voltage Swing
R = 10k
R = 1k
L
●
●
±13.2 ±13.5
±11.7 ±12.7
±12.7 ±13.5
±11.3 ±12.7
V
V
OUT
L
SR
Slew Rate
R ≥ 2k(Note 9)
●
●
2.1
3.2
3.7
4.5
1.7
3.2
3.7
4.5
V/µs
L
GBW
Gain Bandwidth Product
Supply Current per Amplifier
f = 100kHz
O
MHz
I
●
●
5.3
5.3
6.35
6.30
5.3
5.3
6.55
6.50
mA
mA
S
V = ±5V
S
∆V
Offset Voltage Match
●
●
●
●
0.9
30
93
93
3.5
0.9
35
93
93
4.5
mV
pA
dB
dB
OS
+
∆I
Noninverting Bias Current Match
300
400
B
∆CMRR Common Mode Rejection Match (Note 11)
∆PSRR Power Supply Rejection Match (Note 11)
76
79
74
77
3
LT1113
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the temperature range –40°C ≤ TA ≤ 85°C. VS = ±15V, VCM = 0V,
unless otherwise noted. (Note 10)
LT1113AC
TYP
LT1113C
SYMBOL PARAMETER
CONDITIONS (Note 4)
V = ±5V
MIN
MAX
MIN
TYP
MAX
UNITS
V
Input Offset Voltage
●
●
0.7
0.8
2.4
2.6
0.8
0.9
2.8
3.0
mV
mV
OS
S
∆V
∆Temp
Average Input Offset
Voltage Drift
●
7
15
8
20
µV/°C
OS
I
I
Input Offset Current
●
●
80
700
90
1000
pA
pA
OS
B
Input Bias Current
1750 3000
13.0
–10.0 –10.5
1800 5000
13.0
–10.0 –10.5
V
Input Voltage Range
●
●
12.6
12.6
V
V
CM
CMRR
PSRR
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
V
= –10V to 12.6V
●
●
80
81
96
98
78
79
93
96
dB
dB
CM
V = ±4.5V to ±20V
S
A
V = ±12V, R = 10k
V = ±10V, R = 1k
●
●
850
400
3300
2200
750
300
3000
2000
V/mV
V/mV
VOL
O
L
O
L
V
Output Voltage Swing
R = 10k
R = 1k
L
●
●
±13.0 ±12.5
±11.5 ±12.0
±12.5 ±12.5
±11.0 ±12.0
V
V
OUT
L
SR
Slew Rate
R ≥ 2k
●
●
2.0
2.9
3.5
4.3
1.6
2.9
3.5
4.3
V/µs
L
GBW
Gain Bandwidth Product
Supply Current per Amplifier
f = 100kHz
O
MHz
I
●
●
5.30
5.25
6.35
6.30
5.30
5.25
6.55
6.50
mA
mA
S
V = ±5V
S
∆V
Offset Voltage Match
●
●
●
●
1.0
50
93
92
4.4
1.0
55
93
92
5.1
mV
pA
dB
dB
OS
+
∆I
Noninverting Bias Current Match
600
900
B
∆CMRR Common Mode Rejection Match (Note 11)
∆PSRR Power Supply Rejection Match (Note 11)
76
77
73
75
The ● denotes specifications which apply over the temperature range –55°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V,
unless otherwise noted. (Note 12)
LT1113AM
TYP
LT1113M
TYP
SYMBOL PARAMETER
CONDITIONS (Note 4)
MIN
MAX
MIN
MAX
UNITS
V
Input Offset Voltage
●
●
0.8
0.8
2.7
2.8
0.9
0.9
3.3
3.4
mV
mV
OS
V = ±5V
S
∆V
∆Temp
Average Input Offset
Voltage Drift
(Note 8)
●
5
12
8
15
µV/°C
OS
I
I
Input Offset Current
●
●
0.8
15
50
1.0
25
70
nA
nA
OS
B
Input Bias Current
25
27
V
Input Voltage Range
●
●
12.6
13.0
12.6
13.0
V
V
CM
–10.0 –10.4
–10.0 –10.4
CMRR
PSRR
Common Mode Rejection Ratio
Power Supply Rejection Ratio
V
= –10V to 12.6V
●
●
79
80
95
97
77
78
92
95
dB
dB
CM
V = ±4.5V to ±20V
S
4
LT1113
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the temperature range –55°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V,
unless otherwise noted. (Note 12)
LT1113AM
TYP
LT1113M
TYP
SYMBOL PARAMETER
CONDITIONS (Note 4)
V = ±12V, R = 10k
MIN
MAX
MIN
MAX
UNITS
A
Large-Signal Voltage Gain
●
●
800
400
2700
1500
700
300
2500
1000
V/mV
V/mV
VOL
O
L
V = ±10V, R = 1k
O
L
V
Output Voltage Swing
R = 10k
R = 1k
L
●
●
±13.0 ±12.5
±11.5 ±12.0
±12.5 ±12.5
±11.0 ±12.0
V
V
OUT
L
SR
Slew Rate
R ≥ 2k(Note 9)
●
●
1.9
2.2
3.3
3.4
1.6
2.2
3.3
3.4
V/µs
L
GBW
Gain Bandwidth Product
Supply Current Per Amplifier
f = 100kHz
O
MHz
I
●
●
5.30
5.25
6.35
6.30
5.30
5.25
6.55
6.50
mA
mA
S
V = ±5V
S
∆V
Offset Voltage Match
●
●
●
●
1.0
1.8
92
5.0
12
1.0
2.0
92
5.5
20
mV
nA
dB
dB
OS
+
∆I
Noninverting Bias Current Match
B
∆CMRR Common Mode Rejection Match (Note 11)
∆PSRR Power Supply Rejection Match (Note 11)
75
76
73
74
91
91
Note 1: Absolute Maximum Ratings are those values beyond which the
life of the device may be impaired.
Note 2: The LT1113C is guaranteed functional over the Operating
Temperature Range of –40°C to 85°C. The LT1113M is guaranteed
functional over the Operating Temperature Range of –55°C to 125°C.
Note 7: Input voltage range functionality is assured by testing offset
voltage at the input voltage range limits to a maximum of 2.3mV
(A grade) to 2.8mV (C grade).
Note 8: This parameter is not 100% tested.
Note 9: Slew rate is measured in A = –1; input signal is ±7.5V, output
V
Note 3: The LT1113C is guaranteed to meet specified performance from
0°C to 70°C. The LT1113C is designed, characterized and expected to
meet specified performance from –40°C to 85°C but is not tested or QA
sampled at these temperatures. For guaranteed I grade parts, consult the
factory. The LT1113M is guaranteed to meet specified performance from
–55°C to 125°C.
Note 4: Typical parameters are defined as the 60% yield of parameter
distributions of individual amplifiers, i.e., out of 100 LT1113s (200 op
amps) typically 120 op amps will be better than the indicated
specification.
measured at ±2.5V.
Note 10: The LT1113 is designed, characterized and expected to meet
these extended temperature limits, but is not tested at –40°C and 85°C.
Guaranteed I grade parts are available. Consult factory.
Note 11: ∆ CMRR and ∆PSRR are defined as follows:
(1) CMRR and PSRR are measured in µV/V on the individual
amplifiers.
(2) The difference is calculated between the matching sides in µV/V.
(3) The result is converted to dB.
Note 12: The LT1113 is measured in an automated tester in less than
one second after application of power. Depending on the package used,
power dissipation, heat sinking, and air flow conditions, the fully
warmed-up chip temperature can be 10°C to 50°C higher than the
ambient temperature.
Note 5: Warmed-up I and I readings are extrapolated to a chip
B
OS
temperature of 50°C from 25°C measurements and 50°C characterization
data.
Note 6: Current noise is calculated from the formula:
1/2
i = (2qI )
n
B
–19
where q = 1.6 • 10
coulomb. The noise of source resistors up to 200M
swamps the contribution of current noise.
5
LT1113
U W
TYPICAL PERFOR A CE CHARACTERISTICS
1kHz Output Voltage Noise
Density vs Source Resistance
0.1Hz to 10Hz Voltage Noise
Voltage Noise vs Frequency
100
10
1
10k
1k
T
= 25°C
= ±15V
A
S
V
+
V
N
–
R
SOURCE
100
10
1
TYPICAL
1k
V
N
1/f CORNER
120Hz
SOURCE
T
= 25°C
= ±15V
A
S
RESISTANCE
ONLY
V
1
10
100
FREQUENCY (Hz)
10k
0
2
4
6
8
10
100
1k 10k 100k 1M 10M
1G
100M
SOURCE RESISTANCE (Ω)
TIME (SEC)
1113 G01
1113 G03
1113 G02
Voltage Noise vs
Chip Temperature
Input Bias and Offset Currents vs
Chip Temperature
Input Bias and Offset Currents
Over the Common-Mode Range
10
9
8
7
6
5
4
3
2
1
0
100n
30n
10n
3n
400
300
200
100
0
T
= 25°C
= ±15V
V
S
= ±15V
V = ±15V
S
A
S
V
NOT WARMED UP
I , V = 0V
B CM
1n
I , V = 10V
B CM
300p
100p
30p
10p
3p
BIAS CURRENT
I
, V = 0V
OS CM
I
, V = 10V
OS CM
OFFSET CURRENT
1p
–75
50
TEMPERATURE (°C)
100 125
–75
50
TEMPERATURE (°C)
100 125
–15 –10
–5
0
5
10
15
–50 –25
0
25
75
–50 –25
0
25
75
COMMON-MODE RANGE (V)
1113 G04
1113 G04
1113 G06
Common-Mode Rejection Ratio
vs Frequency
Power Supply Rejection Ratio
vs Frequency
Common-Mode Limit vs
Temperature
+
120
100
80
60
40
20
0
120
100
80
60
40
20
0
V
–0
T
= 25°C
T
= 25°C
= ±15V
A
A
S
–0.5
–1.0
–1.5
–2.0
V
+
V
= 5V TO 20V
+PSRR
–PSRR
4.0
3.5
–
V
= –5V TO –20V
3.0
2.5
–
V
+2.0
10
1k
10k 100k
1M
10M
100
–60
–20
20
60
100
140
1k
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
TEMPERATURE (°C)
1113 G08
1113 G09
1113 G07
6
LT1113
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Voltage Gain vs
Chip Temperature
Gain and Phase Shift vs
Frequency
Voltage Gain vs Frequency
10
9
8
7
6
5
4
3
2
1
0
50
40
30
20
10
0
180
140
100
60
60
V
V
V
= ±15V
T
V
C
= 25°C
S
O
O
T
= 25°C
= ±15V
A
S
L
A
S
= ±10V, R = 1k
= ±15V
L
V
80
= ±12V, R = 10k
= 10pF
L
100
120
140
160
180
R
=10k
L
PHASE
R
= 1k
L
GAIN
20
–20
–10
–75
50
CHIP TEMPERATURE (°C)
100 125
0.1
1
10
100
–50 –25
0
25
75
0.01
1
100
10k
1M
100M
FREQUENCY (MHz)
FREQUENCY (Hz)
1113 G11
1113 G12
1113 G10
Small-Signal Transient Response
Large-Signal Transient Response
Supply Current vs Supply Voltage
6
5
4
25°C
–55°C
125°C
2µs/DIV
AV = 1
CL = 10pF
1µs/DIV
A
V = 1
CL = 10pF
V
S = ±15V
VS = ±15V, ±5V
±10
±15
0
±20
±5
1113 G14
1113 G13
SUPPLY VOLTAGE (V)
1113 G15
Output Voltage Swing vs
Load Current
Slew Rate and Gain-Bandwidth
Product vs Temperature
Capacitive Load Handling
+
12
10
8
6
5
4
3
2
1
0
V
–0.8
–1.0
–1.2
–1.4
–1.6
1.4
50
125°C
V
= ±15V
= 25°C
≥ 10k
25°C
S
A
L
O
V
T
40
30
20
10
0
R
V
A
–55°C
= 100mV
P-P
SLEW RATE
GBW
= +10, R = 10k, C = 20pF
F
F
V
= ±5V TO ±20V
S
6
1.2
4
1.0
A
= 1
V
0.8
–55°C
25°C
2
0.6
A
= 10
V
125°C
–2
–
0
V
+0.4
–75
50
TEMPERATURE (°C)
100 125
–50 –25
0
25
75
0
2
4
8
1
100
CAPACITIVE LOAD (pF)
–10 –8
6
I
10
0.1
10
1000 10000
–6 –4
I
SINK
SOURCE
OUTPUT CURRENT (mA)
1113 G18
1113 G16
1113 G17
7
LT1113
TYPICAL PERFOR A CE CHARACTERISTICS
U W
Distribution of Offset Voltage Drift
with Temperature (N8, S8)
Distribution of Offset Voltage Drift
with Temperature (J8)
Warm-Up Drift
40
30
20
10
0
40
30
20
10
0
500
400
300
200
100
0
V
= ±15V
V = ±15V
S
V
T
= ±15V
= 25°C
S
S
A
S8 PACKAGE
N8 PACKAGE
75 J8
150 OP AMPS
78 S8
100 N8
356 OP AMPS
J8 PACKAGE
IN STILL AIR (S8 PACKAGE
SOLDERED ONTO BOARD)
0
1
2
3
4
5
6
–12 –10 –8 –6 –4 –2
0
2
4
6
8
–25 –20 –15 –10
–5
0
5
10 15 20 25
TIME AFTER POWER ON (MINUTES)
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
1113 G21
1113 G20
1113 G19
THD and Noise vs Frequency for
THD and Noise vs Frequency for
Noninverting Gain
Inverting Gain
Channel Separation vs Frequency
1
160
140
120
100
80
1
LIMITED BY
THERMAL INTERACTION
Z
= 2k 15pF
P-P
= +1, +10, +100
Z
V
A
= 2k 15pF
L
L
O
V
V
A
= 20V
= 20V
P-P
O
V
= –1, –10, –100
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
0.1
0.01
0.1
0.01
A
= –100
A
= 100
V
V
A
= –10
V
60
A
= 10
LIMITED BY
V
V
= ±15V
S
40
0.001
0.0001
0.001
0.0001
A
= 1
V
PIN-TO-PIN
A
V
= –1
R
= 1k
L
O
A
CAPACITANCE
V
= 10V
P-P
20
NOISE FLOOR
NOISE FLOOR
1k
T
= 25°C
0
10
100
1k
10k 100k
FREQUENCY (Hz)
1M
10M
20
100
1k
FREQUENCY (Hz)
10k 20k
20
100
10k 20k
FREQUENCY (Hz)
1113 G23
1113 • G22
1113 G24
CCIF IMD Test (Equal Amplitude
Tones at 13kHz, 14kHz)*
THD and Noise vs Output
Amplitude for Noninverting Gain
THD and Noise vs Output
Amplitude for Inverting Gain
1
0.1
0.1
1
0.1
Z
= 2k 15pF, f = 1kHz
O
= +1, +10, +100
V
R
T
= ±15V
= 2k
= 25°C
L
V
Z
= 2k 15pF, f = 1kHz
O
= –1, –10, –100
S
L
L
V
A
A
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
A
0.01
0.001
A
= 100
V
A
= –100
A
= ±10
V
0.01
0.01
V
A
= –10
V
A
A
= 10
= 1
V
0.001
0.001
A
= –1
V
V
NOISE FLOOR
10 30
NOISE FLOOR
10
0.0001
0.0001
0.0001
0.3
1
0.3
1
OUTPUT SWING (V
30
20m
0.1
1
10
30
OUTPUT SWING (V
)
OUTPUT SWING (V
)
)
P-P
P-P
P-P
1113 • G25
1113 • G27
1113 • G26
* See LT1115 data sheet for definition of CCIF testing.
8
LT1113
W
U
O U
I FOR ATIO
S
PPLICATI
A
The LT1113 dual in the plastic and ceramic DIP packages
are pin compatible with and directly replace such JFET op
amps as the OPA2111 and OPA2604 with improved noise
performance. Being the lowest noise dual JFET op amp
available to date, the LT1113 can replace many bipolar op
amps that are used in amplifying low level signals from
high impedance transducers. The best bipolar op amps
will eventually loose out to the LT1113 when transducer
impedance increases due to higher current noise. The low
voltage noise of the LT1113 allows it to surpass every dual
and most single JFET op amps available. For the best
performance versus area available anywhere, the LT1113
is offered in the narrow SO-8 surface mount package with
standard pinout and no degradation in performance.
ThismeanstheLT1113willbeatoutanydualJFETopamp,
only the lowest noise bipolar op amps have the edge
(at low source resistances). As the source resistance
increases from 5k to 50k, the LT1113 will match the best
bipolar op amps for noise performance, since the thermal
noise of the transducer (4kTR) begins to dominate the
total noise. A further increase in source resistance, above
50k, iswheretheopamp’scurrentnoisecomponent(2qIB
RTRANS) will eventually dominate the total noise. At these
high source resistances, the LT1113 will out perform
the lowest noise bipolar op amp due to the inherently low
current noise of FET input op amps. Clearly, the LT1113
will extend the range of high impedance transducers
that can be used for high signal to noise ratios. This
makes the LT1113 the best choice for high impedance,
capacitive transducers.
The low voltage and current noise offered by the LT1113
makes it useful in a wide range of applications, especially
where high impedance, capacitive transducers are used
suchashydrophones,precisionaccelerometersandphoto
diodes. The total output noise in such a system is the gain
times the RMS sum of the op amp input referred voltage
noise, the thermal noise of the transducer, and the op amp
bias current noise times the transducer impedance.
Figure 1 shows total input voltage noise versus source
resistance. In a low source resistance (<5k) application
the op amp voltage noise will dominate the total noise.
The high input impedance JFET front end makes the
LT1113 suitable in applications where very high charge
sensitivityisrequired. Figure2illustratestheLT1113inits
inverting and noninverting modes of operation. A charge
amplifierisshownintheinvertingmodeexample;herethe
gain depends on the principal of charge conservation at
the input of the LT1113. The charge across the transducer
capacitance, CS, is transferred to the feedback capacitor
CF, resulting in a change in voltage, dV, equal to dQ/CF.
1k
LT1124*
LT1113*
C
R
S
S
–
+
100
10
1
SOURCE RESISTANCE = 2R = R
S
†
LT1124
V
* PLUS RESISTOR
O
†
PLUS RESISTOR
2
1000pF CAPACITOR
C
R
S
S
2
V = A √V
+ 4kTR + 2q I • R
B
n
V
n (OP AMP)
†
LT1113
LT1113
LT1124
RESISTOR NOISE ONLY
1k 10k 100k 1M
SOURCE RESISTANCE (Ω)
100
10M 100M
1113 • F01
Figure 1. Comparison of LT1113 and LT1124 Total Output 1kHz Voltage Noise Versus Source Resistance
9
LT1113
PPLICATI
W
U
O U
S
I FOR ATIO
A
R2
R
F
C
B
C
F
R
B
–
+
–
+
OUTPUT
OUTPUT
C
R
R1
S
S
TRANSDUCER
C
R
R
C
C
= C
C
S
B
B
S
S
S
B
B
F
F
= R
R
= R
R
S
C
R
S
S
> R1 OR R2
dQ
dt
dV
dt
C
R
B
B
Q = CV;
= I = C
TRANSDUCER
1113 • F02
Figure 2. Noninverting and Inverting Gain Configurations
The gain therefore is 1 + CF/CS. For unity gain, CF should
equal the transducer capacitance plus the input capaci-
tance of the LT1113 and RF should equal RS. In the
noninverting mode example, the transducer current is
converted to a change in voltage by the transducer capaci-
tance; this voltage is then buffered by the LT1113 with a
gain of 1 + R1/R2. A DC path is provided by RS, which is
either the transducer impedance or an external resistor.
Since RS is usually several orders of magnitude greater
than the parallel combination of R1 and R2, RB is added to
balance the DC offset caused by the noninverting input
bias current and RS. The input bias currents, although
small at room temperature, can create significant errors
over increasing temperature, especially with transducer
resistances of up to 100M or more. The optimum value for
RB isdeterminedbyequatingthethermalnoise(4kTRS)to
Reduced Power Supply Operation
The LT1113 can be operated from ±5V supplies for lower
power dissipation resulting in lower IB and noise at the
expense of reduced dynamic range. To illustrate this
benefit, let’s look at the following example:
An LT1113CS8 operates at an ambient temperature of
25°C with ±15V supplies, dissipating 318mW of power
(typical supply current = 10.6mA for the dual). The SO-8
package has a θJA of 190°C/W, which results in a die
temperature increase of 60.4°C or a room temperature die
operating temperature of 85.4°C. At ±5V supplies, the die
temperature increases by only one third of the previous
amount or 20.1°C resulting in a typical die operating
temperature of only 45.1°C. A 40 degree reduction of die
temperature is achieved at the expense of a 20V reduction
in dynamic range. If no DC correction resistor is used at
the input, the input referred offset will be the input bias
current at the operating die temperature times the trans-
ducerresistance(refertoInputBiasandOffsetCurrentsvs
Chip Temperature graph in Typical Performance Charac-
teristics section). A 100mV input VOS is the result of a 1nA
IB (at 85°C) dropped across a 100M transducer resis-
tance; at ±5V supplies, the input offset is only 28mV (IB at
45°C is 280pA). Careful selection of a DC correction
2
the current noise (2qIB) times RS . Solving for RS results
in RB = RS = 2VT/IB
kT
q
VT =
= 26mV at 25°C .
A parallel capacitor, CB, is used to cancel the phase shift
caused by the op amp input capacitance and RB.
10
LT1113
W
U
O U
I FOR ATIO
S
PPLICATI
A
INPUT: ±5.2V Sine Wave
LT1113 Output
OPA2111 Output
Figure 3. Voltage Follower with Input Exceeding the Common-Mode Range ( VS = ±5V)
resistor (RB) will reduce the IR errors due to IB by an order
of magnitude. A further reduction of IR errors can be
achieved by using a DC servo circuit shown in the applica-
tions section of this data sheet. The DC servo has the
advantage of reducing a wide range of IR errors to the
millivolt level over a wide temperature variation. The
preservation of dynamic range is especially important
when reduced supplies are used, since input bias currents
can exceed the nanoamp level for die temperatures
over 85°C.
Advantages of Matched Dual Op Amps
In many applications the performance of a system
depends on the matching between two operational ampli-
fiersratherthantheindividualcharacteristicsofthetwoop
amps. Two or three op amp instrumentation amplifiers,
tracking voltage references and low drift active filters
are some of the circuits requiring matching between two
op amps.
The well-known triple op amp configuration in Figure 4
illustratestheseconcepts.Outputoffsetisafunctionofthe
difference between the two halves of the LT1113. This
error cancellation principle holds for a considerable
number of input referred parameters in addition to
offset voltage and bias current. Input bias current will
be the average of the two noninverting input currents
(IB+). The difference between these two currents (∆IB+)
is the offset current of the instrumentation amplifier.
Common mode and power supply rejections will be
dependent only on the match between the two amplifiers
(assuming perfect resistor matching).
To take full advantage of a wide input common mode
range, the LT1113 was designed to eliminate phase rever-
sal. Referring to the photographs shown in Figure 3, the
LT1113 is shown operating in the follower mode (AV = +1)
at±5Vsupplieswiththeinputswinging±5.2V. Theoutput
of the LT1113 clips cleanly and recovers with no phase
reversal, unlike the competition as shown by the last
photograph. This has the benefit of preventing lock-up in
servo systems and minimizing distortion components.
The effect of input and output overdrive on one amplifier
has no effect on the other, as each amplifier is biased
independently.
11
LT1113
W
U
O U
S
I FOR ATIO
PPLICATI
A
15V
Typical performance of the instrumentation amplifier:
Input offset voltage = 0.8mV
Input bias current = 320pA
3
8
–
R6
R4
1k
IN
+
1/2
10k
1
LT1113
IC1
2
C1
50pF
–
4
R1
1k
Input offset current = 10pA
Input resistance = 1011Ω
–15V
R2
–
Input noise = 3.4µVP-P
2
3
200Ω
1/2
1
OUTPUT
LT1113
IC2
High Speed Operation
+
C
L
R3
1k
ThelownoiseperformanceoftheLT1113wasachievedby
making the input JFET differential pair large to maximize
the first stage gain. Increasing the JFET geometry also
increases the parasitic gate capacitance, which if left
unchecked, can result in increased overshoot and ringing.
When the feedback around the op amp is resistive (RF),
a pole will be created with RF, the source resistance and
capacitance (RS,CS), and the amplifier input capacitance
(CIN = 27pF). In closed loop gain configurations and
with RS and RF in the kilohm range (Figure 5), this pole
can create excess phase shift and even oscillation.
A small capacitor (CF) in parallel with RF eliminates this
problem. With RS(CS + CIN) = RFCF, the effect of the
feedback pole is completely removed.
–
6
5
R5
1k
1/2
LT1113
IC1
7
+
+
IN
R7
10k
GAIN = 100
BANDWIDTH = 400kHz
INPUT REFERRED NOISE = 6.6nV/√Hz AT 1kHz
WIDEBAND NOISE DC TO 400kHz = 6.6 µV
1113 • F04
RMS
C
L
≤ 0.01µF
Figure 4. Three Op Amp Instrumentation Amplifier
The concepts of common mode and power supply
rejection ratio match (∆CMRR and ∆PSRR) are best
demonstrated with a numerical example:
Assume CMRRA = +50µV/V or 86dB,
and CMRRB = + 39µV/V or 88dB,
then ∆CMRR = 11µV/V or 99dB;
if CMRRB = -39µV/V which is still 88dB,
then ∆CMRR = 89µV/V or 81dB
C
F
R
F
–
+
C
OUTPUT
IN
R
S
C
S
Clearly the LT1113, by specifying and guaranteeing all of
these matching parameters, can significantly improve the
performance of matching-dependent circuits.
1113 • F05
Figure 5.
12
LT1113
U
O
TYPICAL APPLICATI S
Accelerometer Amplifier with DC Servo
C1
1250pF
R1
100M
R2
18k
R3
2k
C2
2µF
R4
R4C2 = R5C3 > R1 (1 + R2/R3) C1
OUTPUT = 0.8mV/pC* = 8.0mV/g**
DC OUTPUT ≤ 2.7mV
20M
–
+
6
5
7
R5
20M
1/2 LT1113
OUTPUT NOISE = 6nV/√Hz AT 1kHz
*PICOCOULOMBS
**g = EARTH’S GRAVITATIONAL CONSTANT
5V TO 15V
C3
2µF
ACCELEROMETER
B & K MODEL 4381
OR EQUIVALENT
–
8
2
3
1
1/2 LT1113
+
OUTPUT
4
1113 • TA03
–5V TO –15V
Paralleling Amplifiers to Reduce Voltage Noise
3
+
1k
A1
1
1/2 LT1113
2
–
51Ω
51Ω
1k
10k
3
2
15V
8
+
1k
–
A2
1
6
5
1/2 LT1113
7
OUTPUT
1/2 LT1113
–
+
1k
4
–15V
15V
8
5
6
+
1k
An
7
1/2 LT1113
–
4
1. ASSUME VOLTAGE NOISE OF LT1113 AND 51Ω SOURCE RESISTOR = 4.6nV/√Hz
2. GAIN WITH n LT1113s IN PARALLEL = n • 200
3. OUTPUT NOISE = √n • 200 • 4.6nV/√Hz
–15V
1k
51Ω
OUTPUT NOISE 4.6
4. INPUT REFERRED NOISE =
=
nV/√Hz
n • 200
√n
5. NOISE CURRENT AT INPUT INCREASES √n TIMES
9µV
√5
6. IF n = 5, GAIN = 1000, BANDWIDTH = 1MHz, RMS NOISE, DC TO 1MHz =
= 4µV
1113 • TA04
13
LT1113
TYPICAL APPLICATI S
U
O
Low Noise Light Sensor with DC Servo
C1
2pF
R1
1M
–
2
1
1/2 LT1113
C2
OUTPUT
+
3
0.022µF
D2
1N914
C
D
+V
R2
100k
8
–
6
D1
1N914
R3
1k
7
2N3904
1/2 LT1113
+
5
4
R5
1k
R4
1k
–V
HAMAMATSU
S1336-5BK
R2C2 > C1R1
C
D
V
O
= PARASITIC PHOTODIODE CAPACITANCE
= 100mV/µWATT FOR 200nm WAVE LENGTH
330mV/µWATT FOR 633nm WAVE LENGTH
–
1113 • TA05
V
10Hz Fourth Order Chebyshev Lowpass Filter (0.01dB Ripple)
R2
237k
R5
154k
C1
33nF
C3
10nF
15V
8
R1
237k
R3
249k
–
2
3
R4
154k
R6
V
IN
249k
–
6
5
1
1/2 LT1113
C2
100nF
7
+
V
OUT
1/2 LT1113
+
C4
330nF
4
–15V
TYPICAL OFFSET ≈ 0.8mV
1% TOLERANCES
FOR V = 10V , V
= –121dB AT f > 330Hz
= – 6dB AT f = 16.3Hz
IN
P-P OUT
1113 • TA06
LOWER RESISTOR VALUES WILL RESULT IN LOWER THERMAL NOISE AND LARGER CAPACITORS
14
LT1113
U
PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted.
J8 Package
8-Lead CERDIP (Narrow 0.300, Hermetic)
(LTC DWG # 05-08-1110)
CORNER LEADS OPTION
(4 PLCS)
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
0.405
(10.287)
MAX
0.005
(0.127)
MIN
0.200
(5.080)
MAX
0.045 – 0.068
0.300 BSC
(0.762 BSC)
(1.143 – 1.727)
FULL LEAD
OPTION
6
5
4
8
7
0.015 – 0.060
(0.381 – 1.524)
0.025
(0.635)
RAD TYP
0.220 – 0.310
(5.588 – 7.874)
0.008 – 0.018
(0.203 – 0.457)
0° – 15°
J8 1298
1
2
3
0.045 – 0.065
(1.143 – 1.651)
0.125
3.175
MIN
0.014 – 0.026
(0.360 – 0.660)
0.100
(2.54)
BSC
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
N8 Package
8-Lead PDIP (Narrow 0.300)
(LTC DWG # 05-08-1510)
0.400*
(10.160)
MAX
0.130 ± 0.005
0.300 – 0.325
0.045 – 0.065
(3.302 ± 0.127)
(1.143 – 1.651)
(7.620 – 8.255)
8
1
7
6
5
0.065
(1.651)
TYP
0.255 ± 0.015*
(6.477 ± 0.381)
0.009 – 0.015
(0.229 – 0.381)
0.125
0.020
(0.508)
MIN
(3.175)
MIN
+0.035
–0.015
2
4
3
0.325
0.018 ± 0.003
0.100
(2.54)
BSC
N8 1098
+0.889
8.255
(0.457 ± 0.076)
(
)
–0.381
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.189 – 0.197*
(4.801 – 5.004)
0.010 – 0.020
(0.254 – 0.508)
7
5
8
6
× 45°
0.053 – 0.069
(1.346 – 1.752)
0.004 – 0.010
(0.101 – 0.254)
0.008 – 0.010
(0.203 – 0.254)
0°– 8° TYP
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
0.016 – 0.050
(0.406 – 1.270)
0.050
(1.270)
BSC
0.014 – 0.019
(0.355 – 0.483)
TYP
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
SO8 1298
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
1
2
3
4
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT1113
TYPICAL APPLICATI S
U
O
Light Balance Detection Circuit
R1
1M
C1
I
I
1
2pF TO 8pF
PD
PD
1
V
= 1M • (I – I )
1 2
2
OUT
PD PD = HAMAMATSU S1336-5BK
1,
–
WHEN EQUAL LIGHT ENTERS PHOTODIODES, V
< 3mV.
OUT
2
V
1/2 LT1113
OUT
+
2
1113 • TA07
Unity Gain Buffer with Extended Load Capacitance Drive Capability
R2
1k
C1
C1 = C ≤ 0.1µF
L
–
R1
33Ω
OUTPUT SHORT-CIRCUIT CURRENT
( 30mA) WILL LIMIT THE RATE AT WHICH THE
V
1/2 LT1113
+
VOLTAGE CAN CHANGE ACROSS LARGE CAPACITORS
dV
OUT
(I = C
)
V
IN
dt
C
L
1113 • TA08
RELATED PARTS
PART NUMBER
LT1028
DESCRIPTION
COMMENTS
Single Low Noise Precision Op Amp
Dual Low Noise Precision Op Amp
Dual Low Noise Precision JFET Op Amp
V
V
= 1.1nV/√Hz Max
= 4.2nV/√Hz Max
NOISE
NOISE
LT1124
LT1169
10pA I
B
LT1462
Dual Picoamp I C-LoadTM Op Amp
I = 2pA Max, 10000pF C-Load, I = 45µA
B S
B
LT1464
Dual Picoamp I C-Load Op Amp
I = 2pA Max, 10000pF C-Load, I = 200µA
B
B
S
LT1792
Single Low Noise Precision Op Amp
Single Low Noise Precision Op Amp
Single LT1113
LT1793
Single LT1169
C-Load is a trademark of Linear Technology Corporation.
1113fa LT/TP 0100 2K REV A • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1993
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
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(408)432-1900 FAX:(408)434-0507 www.linear-tech.com
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