LT1001AM [Linear]
Precision Operational Amplifier; 精密运算放大器器
| 型号： | LT1001AM |
| 厂家： | 
Linear |
| 描述： | Precision Operational Amplifier |
| 文件： | 总12页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT1001
Precision Operational
Amplifier
U
FEATURES
DESCRIPTION
The LT®1001 significantly advances the state-of-the-
art of precision operational amplifiers. In the design,
processing, and testing of the device, particular atten-
tion has been paid to the optimization of the entire
distribution of several key parameters. Consequently,
the specifications of the lowest cost, commercial tem-
perature device, the LT1001C, have been dramatically
improvedwhencomparedtoequivalentgradesofcom-
peting precision amplifiers.
■
Guaranteed Low Offset Voltage
LT1001AM
LT1001C
Guaranteed Low Drift
LT1001AM
LT1001C
Guaranteed Low Bias Current
LT1001AM
LT1001C
Guaranteed CMRR
LT1001AM
LT1001C
Guaranteed PSRR
LT1001AM
LT1001C
Low Power Dissipation
LT1001AM
LT1001C
Low Noise 0.3µVP-P
15µV max
60µV max
■
■
■
■
■
■
0.6µV/°C max
1.0µV/°C max
2nA max
4nA max
Essentially, the input offset voltage of all units is less
than 50µV (see distribution plot below). This allows the
LT1001AM/883 to be specified at 15µV. Input bias and
offset currents, common-mode and power supply re-
jection of the LT1001C offer guaranteed performance
which were previously attainable only with expensive,
selected grades of other devices. Power dissipation is
nearly halved compared to the most popular precision
op amps, without adversely affecting noise or speed
performance. A beneficial by-product of lower dissipa-
tion is decreased warm-up drift. Output drive capability
of the LT1001 is also enhanced with voltage gain
guaranteed at 10 mA of load current. For similar perfor-
mance in a dual precision op amp, with guaranteed
matchingspecifications, seetheLT1002. Shownbelow
is a platinum resistance thermometer application.
, LTC and LT are registered trademarks of Linear Technology Corporation.
114dB min
110dB min
110dB min
106dB min
75mW max
80mW max
U
APPLICATIONS
■
Thermocouple amplifiers
■
■
■
Strain gauge amplifiers
Low level signal processing
High accuracy data acquisition
Linearized Platinum Resistance Thermometer
Typical Distribution
of Offset Voltage
with ±0.025°C Accuracy Over 0 to 100°C
1MEG.**
+15
VS = ±15V, TA = 25°C
†
R plat.
20k
1kΩ = 0°C
330k*
GAIN
TRIM
954 UNITS
200
1.2k**
FROM THREE RUNS
10k*
2
3
1 µf
150
–
+
2
6
LT1001
–
6
10k*
LT1001
OUTPUT
100
3
LINEARITY
TRIM
0 TO 10V =
0 TO 100°C
+
200Ω
50
0
90k*
20k
10k*
LM129
OFFSET TRIM
–60 –40
–20
0
20
40
60
‡
*
ULTRONIX 105A WIREWOUND
Trim sequence: trim offset (°0C = 1000.0Ω),
trim linearity (°3C5= 1138.7Ω), trim gain
(1°0C0= 1392.6Ω). Repeat until all three
points are fixed wi±th0.025°C.
INPUT OFFSET VOLTAGE (MICROVOLTS)
** 1% FILM
†
1001 TA02
PLATINUM RTD
118MF (ROSEMOUNT, INC.)
1001 TA01
1
LT1001
W W U W
U
W U
ABSOLUTE MAXIMUM RATINGS
PACKAGE/ORDER INFORMATION
Supply Voltage ...................................................... ±22V
Differential Input Voltage ...................................... ±30V
Input Voltage ........................................................ ±22V
Output Short Circuit Duration ......................... Indefinite
Operating Temperature Range
LT1001AM/LT1001M ....................... –55°C to 150°C
LT1001AC/LT1001C .............................. 0°C to 125°C
Storage: All Devices.......................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
TOP VIEW
OFFSET ADJUST
ORDER PART NUMBER
8
V+
OUT
7
5
1
LT1001AMH/883
LT1001MH
LT1001ACH
LT1001CH
–
+
–IN
2
6
3
NC
4
+IN
V– (CASE)
H PACKAGE
METAL CAN
LT1001AMJ8/883
LT1001MJ8
LT1001ACJ8
LT1001CJ8
LT1001ACN8
LT1001CN8
LT1001CS8
TOP VIEW
V
V
OS
OS
TRIM
–IN
+IN
V–
1
2
3
4
TRIM
8
–
+
7
6
5
V+
OUT
NC
J8 PACKAGE
8 PIN HERMETIC DIP 8 PIN PLASTIC DIP
N8 PACKAGE
S8 PACKAGE
8 PIN PLASTIC SO
S8 PART MARKING
1001
VS = ±15V, TA = 25°C, unless otherwise noted
ELECTRICAL CHARACTERISTICS
LT1001AM/883
LT1001AC
LT1001M/LT1001C
SYMBOL PARAMETER
CONDITIONS
LT1001AM/883
LT1001AC
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
7
15
Note 1
V
Input Offset Voltage
18
60
µV
OS
10
25
∆V
∆Time
Long Term Input Offset Voltage
Stability
OS
Notes 2 and 3
0.2
0.3
1.0
2.0
0.3
0.4
1.5
3.8
µV/month
I
Input Offset Current
Input Bias Current
nA
nA
OS
b
I
±0.5
0.3
±2.0
0.6
±0.7
0.3
±4.0
0.6
e
e
Input Noise Voltage
Input Noise Voltage Density
0.1Hz to 10Hz (Note 2)
µV
p-p
n
n
f = 10Hz (Note 5)
10.3
9.6
18.0
11.0
10.5
9.8
18.0
11.0
O
nV√Hz
f = 1000Hz (Note 2)
O
A
Large Signal Voltage Gain
R ≥ 2kΩ, V = ±12V
450
300
800
500
400
250
800
500
VOL
L
O
V/mV
R ≥ 1kΩ V = ±10V
L
O
CMRR
PSRR
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Resistance Differential Mode
Input Voltage Range
V
= ±13V
114
110
30
126
123
100
110
106
15
126
123
80
dB
dB
CM
V = ±3V to ±18V
S
R
MΩ
V
in
±13 ±14
±13
±14
V
S
Maximum Output Voltage Swing
R ≥ 2kΩ
R ≥ 1kΩ
L
±13 ±14
±12 ±13.5
±13
±12
±14
±13.5
V
V
OUT
R
L
Slew Rate
R ≥ 2kΩ (Note 4)
L
0.1 0.25
0.4 0.8
0.1
0.4
0.25
0.8
V/µs
GBW
Gain-Bandwidth Product
Power Dissipation
(Note 4)
MHz
P
No load
No load, V = ±3V
46
4
75
6
48
4
80
8
d
mW
S
See Notes on page 3.
2
LT1001
ELECTRICAL CHARACTERISTICS VS = ±15V, –55°C ≤ TA ≤ 125°C, unless otherwise noted
LT1001AM/883
LT1001M
TYP
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
µV
V
OS
Input Offset Voltage
●
●
30
60
45
160
1.0
∆V
Average Offset Voltage Drift
0.2
0.6
0.3
µV/°C
OS
∆Temp
I
Input Offset Current
●
●
●
●
●
●
●
●
0.8
±1.0
700
122
117
±14
4.0
1.2
7.6
nA
nA
OS
B
I
Input Bias Current
±4.0
±1.5 ±8.0
A
Large Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Voltage Range
R ≥ 2kΩ, V = ±10V
300
110
104
200
106
700
120
V/mV
dB
VOL
L
O
CMRR
PSRR
V
CM
= ±13V
V = ±3 to ±18V
S
100
117
dB
±13
±13
±14
V
V
Output Voltage Swing
Power Dissipation
R ≥ 2kΩ
L
±12.5 ±13.5
±12.0 ±13.5
V
OUT
P
No load
55
90
60
100
mW
d
VS = ±15V, 0°C ≤ TA ≤ 70°C, unless otherwise noted
LT1001AC
LT1001C
TYP
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
60
MIN
MAX
110
1.0
UNITS
µV
V
OS
Input Offset Voltage
●
●
20
30
∆V
Average Offset Voltage Drift
0.2
0.6
0.3
µV/°C
OS
∆Temp
I
Input Offset Current
●
●
●
●
●
●
●
●
0.5
3.5
0.6
±1.0
750
123
120
±14
5.3
nA
nA
OS
B
I
Input Bias Current
±0.7
±3.5
±5.5
A
Large Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Voltage Range
R ≥ 2kΩ, V = ±10V
350 750
110 124
106 120
±13 ±14
±12.5 ±13.8
50
250
106
V/mV
dB
VOL
L
O
CMRR
PSRR
V
CM
= ±13V
V = ±3V to ±18V
S
103
dB
±13
V
V
Output Voltage Swing
Power Dissipation
R ≥ 2kΩ
L
±12.5 ±13.8
V
OUT
P
No load
85
55
90
mW
d
Note 2: This parameter is tested on a sample basis only.
Note 3: Long Term Input Offset Voltage Stability refers to the averaged
The
● denotes the specifications which apply over the full operating
temperature range.
trend line of V versus Time over extended periods after the first 30 days
Note 1: Offset voltage for the LT1001AM/883 and LT1001AC are measured
after power is applied and the device is fully warmed up. All other grades
are measured with high speed test equipment, approximately 1 second
after power is applied. The LT1001AM/883 receives 168 hr. burn-in at
125°C. or equivalent.
OS
of operation. Excluding the initial hour of operation, changes in V during
OS
the first 30 days are typically 2.5µV.
Note 4: Parameter is guaranteed by design.
Note 5: 10Hz noise voltage density is sample tested on every lot. Devices
100% tested at 10Hz are available on request.
3
LT1001
TYPICAL PERFORMANCE CHARACTERISTICS
W
U
Typical Distribution of Offset
Voltage Drift with Temperature
Offset Voltage Drift withTemperature
of Representative Units
Warm-Up Drift
100
80
60
40
20
50
40
LT1001
265 UNITS
TESTED
V
S
= ±15V
V
= ±15V
= 25°C
S
A
30
4
3
2
1
T
20
LT1001A
10
METAL CAN (H) PACKAGE
0
LT1001A
–10
–20
–30
–40
–50
DUAL-IN-LINE PACKAGE
PLASTIC (N) OR CERDIP (J)
LT1001
–1.0 –0.6 –0.2 0 +0.2 +0.6 +1.0
–50
0
25
50
75 100 125
0
1
3
4
5
–25
2
TEMPERATURE (°C)
OFFSET VOLTAGE DRIFT (µV/°C)
TIME AFTER POWER ON (MINUTES)
1001 G01
1001 G02
1001 G03
Long Term Stability of Four
Representative Units
0.1Hz to 10Hz Noise
Noise Spectrum
10
5
100
10
T
= 25°C
= ±3 TO ±18V
A
S
V
30
10
3
1/f CORNER
4Hz
VOLTAGE
0
1.0
1/f CORNER
70Hz
–5
–10
3
1
0.3
0.1
CURRENT
0
1
2
3
4
5
0
2
4
6
8
10
1
10
100
1000
FREQUENCY (Hz)
TIME (MONTHS)
TIME (SECONDS)
1001 G05
1001 G06
1001 G04
Input Bias and Offset Current
vs Temperature
Input Bias Current
Input Bias Current vs
Over the Common Mode Range
Differential Input Voltage
1.5
1.0
0.5
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
30
20
10
0
V
= ±15V
= 25°C
S
A
–
T
+
I
b
V
CM
V
= ±15V
S
DEVICE WITH POSITIVE INPUT CURRENT
V
= ±15V
= 25°C
S
A
T
BIAS CURRENT
–.5
DEVICE WITH NEGATIVE INPUT CURRENT
–1.0
COMMON-MODE
28V
I
B
≈ 1 nA to V
= 0.7V
DIFF
OFFSET CURRENT
INPUT RESISTANCE =
= 280GΩ
0.1nA
–1.5
25
50
TEMPERATURE (°C)
75
100 125
–15 –10
–5
0
5
10
15
0.1
0.3
1.0
3.0
10
30
–50 –25
0
COMMON-MODE INPUT VOLTAGE
±DIFFERENTIAL INPUT (VOLTS)
1001 G09
1001 G08
1001 G07
4
LT1001
W
U
TYPICAL PERFORMANCE CHARACTERISTICS
Open Loop Voltage Gain
vs Temperature
Open Loop Voltage Gain
Frequency Response
Gain, Phase Shift vs Frequency
80
20
16
12
8
140
120
100
80
1200k
1000k
800k
600k
400k
200k
0
100
120
140
160
180
200
220
PHASE 25°C
T
A
= 25°C
V
= ±15V, V = ±12V
O
S
25°C
PHASE
MARGIN
= 60°
V
= ±15V
S
60
V
= ±3V, V = ±1V
O
S
4
GAIN 125°C
40
V
= ±3V
GAIN 25°C & –55°C
S
0
20
V
= ±15V
S
–4
–8
0
PHASE MARGIN –55°C = 63°
125°C = 57°
–20
25
50
TEMPERATURE (°C)
75
100 125
0.1
1
10 100
1k
FREQUENCY (Hz)
10k 100k 1M 10M
0.1
0.2
0.5
1
2
–50 –25
0
FREQUENCY (MHz)
1001 G12
1001 G10
1001 G11
Common Mode Rejection Ratio
vs Frequency
Power Supply Rejection Ratio
vs Frequency
Common Mode Limit
vs Temperature
+
140
140
120
100
80
V
–0.2
–0.4
–0.6
–0.8
–1.0
V
= ±15V ±1V p-p
= 25°C
S
A
120
100
80
60
40
20
0
+
T
V
V
= 1.2 to 4V
+
= 12 to 18V
NEGATIVE SUPPLY
POSITIVE SUPPLY
V
= ±15V
= 25°C
S
A
–
T
V
V
= –12 to –18V
= –1.2 to –4V
+1.0
+0.8
+0.6
+0.4
+0.2
60
–
40
–
V
20
0.1
10
100
1k
10k 100k
1
50
TEMPERATURE °C
100 125
1
10
100
1k
10k
100k 1M
–50 –25
0
25
75
FREQUENCY (Hz)
FREQUENCY (Hz)
1001 G15
1001 G14
1001 G13
Output Short-Circuit Current
vs Time
Output Swing vs Load Resistance
NEGATIVE SWING
Supply Current vs Supply Voltage
16
12
8
50
40
–55°C
2.0
1.5
1.0
0.5
30
25°C
125°C
25°C
–55°C
20
V
S
= ±15V
10
POSITIVE SWING
125°C
–10
–20
–30
–40
–50
125°C
25°C
4
–55°C
V
= ±15V
= 25°C
S
A
T
0
100
300
1000
3k
10k
±12
±3 ±6 ±9
±15 ±18 ±21
0
1
3
4
2
LOAD RESISTANCE (Ω)
SUPPLY VOLTAGE (V)
TIME FROM OPUTPUT SHORT (MINUTES)
1001 G17
1001 G16
1001 G18
5
LT1001
W
U
TYPICAL PERFORMANCE CHARACTERISTICS
Voltage Follower Overshoot
Small Signal Transient Response
Small Signal Transient Response
vs Capacitive Load
100
80
60
40
20
0
V
= ±15V
= 25°C
S
A
T
V
R
= 100mV
IN
> 50k
L
10,000
CAPACITIVE LOAD (PICOFARADS)
100,000
100
1000
AV = +1, CL = 1000pF
AV = +1, CL = 50pF
1001 G21
1001 G19
1001 G20
Maximum Undistorted
Output vs. Frequency
Large Signal Transient Response
Closed Loop Output Impedance
28
24
20
16
12
8
100
10
V
T
= ±15V
S
A
= 25°C
A
V
= 1000
1
A
V
= +1
0.1
I
= ±1mA
= ±15V
= 25°C
O
S
A
0.01
0.001
V
4
T
0
1
10
100
1000
1
10
100
1k
10k
100k
FREQUENCY (kHz)
FREQUENCY (Hz)
1001 G22
1001 G23
1001 G24
U
W U U
Unless proper care is exercised, thermocouple effects
caused by temperature gradients across dissimilar metals
at the contacts to the input terminals, can exceed the
inherent drift of the amplifier. Air currents over device
leads should be minimized, package leads should be
short, and the two input leads should be as close together
as possible and maintained at the same temperature.
APPLICATIONS INFORMATION
Application Notes and Test Circuits
The LT1001 series units may be inserted directly into
OP-07, OP-05, 725, 108A or 101A sockets with or without
removal of external frequency compensation or nulling
components. The LT1001 can also be used in 741, LF156
or OP-15 applications provided that the nulling circuitry is
removed.
Test Circuit for Offset Voltage and its Drift with Temperature
*50k
TheLT1001isspecifiedoverawiderangeofpowersupply
voltagesfrom±3Vto±18V. Operationwithlowersupplies
is possible down to ±1.2V (two Ni-Cad batteries). How-
ever, with ±1.2V supplies, the device is stable only in
closed loop gains of +2 or higher (or inverting gain of one
or higher).
+15V
–
2
3
7
LT1001
4
6
V
100Ω
*
*
O
+
*
RESISTORS MUST HAVE LOW
THERMOELECTRIC POTENTIAL.
50k
–15V
** THIS CIRCUIT IS ALSO USED AS THE BURN-IN
CONFIGURATION FOR THE LT1001, WITH SUPPL
V
= 1000V
OS
O
VOLTAGES INCREASED T±O20V.
1001 F01
6
LT1001
Offset Voltage Adjustment
TheinputoffsetvoltageoftheLT1001, anditsdriftwithtempera-
ture, are permanently trimmed at wafer test to a low level.
However, if further adjustment of Vos is necessary, nulling with
a 10k or 20k potentiometer will not degrade drift with tempera-
ture. Trimming to a value other than zero creates a drift of (Vos/
300)µV/°C, e.g., if Vos is adjusted to 300 µV, the change in drift
will be 1 µV/°C. The adjustment range with a 10k or 20k pot is
approximately ±2.5mV. If less adjustment range is needed, the
sensitivityandresolutionofthenullingcanbeimprovedbyusing
a smaller pot in conjunction with fixed resistors. The example
below has an approximate null range of ±100 µV.
0.1Hz to 10Hz Noise Test Circuit
0.1µF
VOLTAGE GAIN = 50,000
100kΩ
10Ω
–
+
2kΩ
LT1001
+
–
22µF
4.3k
LT1001
SCOPE
4.7 µF
× 1
DEVICE
UNDER
TEST
R
= 1MΩ
2.2µF
IN
100k
0.1 µF
110k
24.3k
Improved Sensitivity Adjustment
1001 F03
7.5k
(Peak-to-Peak noise measured in 10 sec interval)
+15V
1k
The device under test should be warmed up for three minutes and
shielded from air currents.
7.5k
1
8
–
2
3
7
6
OUTPUT
INPUT
LT1001
4
+
1001 F02
–15V
DC Stabilized
1000v/µsec Op Amp
+15V
2.2µF
TANTALUM
+
300
3.9k
.1µF
1N914
200Ω*
2N5486
200pf
2N5160
22µF TANTALUM
+
0.01 µF
2N3866
33
1k
2N4440
1.8k
30k
30k
R
IN
1k
–15V
6
10k
3
INPUT
+
.001
µF
390Ω
2N3904
2N3904
15pF
LT1001
2
–
.5Ω
.5Ω
OUTPUT
470
22
2N5160 2N3906
0.01µF
2N3866
2N4440
22µF TANTALUM
200pF
+
–
1.2k
3.9k
200Ω*
15-60pF
TUSONIX # 519-3188
300
1N914
0.1µF
–15V
1001 F04
1k
f
FULL POWER
BANDWIDTH 8MHz
*ADJUST FOR
R
BEST SQUARE WAVE
AT OUTPUT
7
LT1001
U
TYPICAL APPLICATIONS
Photodiode Amplifier
Microvolt Comparator with TTL Output
+5V
100pF
39.2 Ω 1%
1.21M
5k 5%
OUTPUT
500k 1%
1%
7
NON
INVERTING
INPUT
4.99k 1%
20k
–
+
8
2
2
3
–
LT1001
6
OUTPUT
1V/µA
5%
IN914
INVERTING
INPUT
2N3904
λ
LT1001
4
3
+
–5V
500k
1%
100pF
Positive feedback to one of the nulling terminals
creates 5 µ to 20 µV of hysteresis. Input offset
voltage is typically changed by less than 5 µV due
to the feedback.
1001 TA03
1001 TA04
Precision Current Sink
Precision Current Source
+
V
= 2 to 35V
5k
V
R
IN
R
C
I
=
5V
OUT
–4
V
3
IN
7
LT1001
4
RC ≈ 10
3
+
7
+
+
0 to (V – 1V)
6
6
2N3685
LT1001
4
2N3685
2
5k
V
2
–
IN
–
2N2219
–
2N2219
0 to (V + 1V)
10K
–5V
10k
1000pF
R
–
V
= –2 to –35V
V
R
IN
I
=
OUT
1001 TA05
1001 TA06
Strain Gauge Signal Conditioner with Bridge Excitation
+15V
+15V
8.2k
2.0k*
100Ω
3
2
+
–
REFERENCE OUT
TO MONITORING
A/D CONVERTER
2k
6
2N2219
LT1001
LM329
4.99k*
IN4148
350Ω BRIDGE
3
+
6
0 TO 10V
OUT
*
LT1001
10k
ZERO
2
301k
–
1µF
340k*
2
3
IN4148
2k
–
+
1.1k*
6
LT1001
2N2907
GAIN
TRIM
100Ω
5W
*RN60C FILM RESISTORS
1001 TA07
–15V
8
LT1001
Large Signal Voltage Follower
With 0.001% Worst-Case Accuracy
rejections. Worst-case summation of guaranteed
specifications is tabulated below.
OUTPUT ACCURACY
+12 to +18V
LT1001AM
/883
LT1001C
LT1001AM
/883
LT1001C
0 to 70
7
LT1001
4
2
3
–
+
OUTPUT
25
°C
25
Max.
°
C
–55 to 125
Max.
°C
°C
6
R
Error
Max.
Max.
S
–10 to +10V
INPUT
–10 to +10V
Offset Voltage
Bias Current
Common-Mode Rejection
Power Supply Rejection
Voltage Gain
15µV
20µV
20µV
18µV
22µV
60µV
40µV
30µV
30µV
25µV
60µV
40µV
30µV
36µV
33µV
110µV
55µV
50µV
42µV
40µV
0 to 10kΩ
–12 to –18V
1001 TA08
The voltage follower is an ideal example illustrating
theoverallexcellenceoftheLT1001.Thecontributing
error terms are due to offset voltage, input bias cur-
rent, voltage gain, common-mode and power-supply
Worst-case Sum
Percent of Full Scale
(=20V)
95µV
185µV
199µV
297µV
0.0005%
0.0009%
0.0010%
0.0015%
Thermally Controlled NiCad Charger
+15V
7
10V, 1.2 AMP HR
NICAD STACK
0.1µF
+ –
– +
IN4001
2k
3
2
+
BATTERY
AMBIENT
*
6
LT1001
620k
–15V
–
2N6387
IN4148
4
–15V
43k
CIRCUIT USES TEMPERATURE DIFFERENCE
BETWEEN BATTERY PACK MOUNTED
THERMOCOUPLE AND AMBIENT THERMO-
COUPLE TO SET BATTERY CHARGE
CURRENT. PEAK CHARGING
0.6Ω
5W
10Ω
1µF
CURRENT IS 1 AMP.
*
*
SINGLE POINT GROUND
THERMOCOUPLES ARE
4µ0V/°C CHROMEL-ALUMEL
(TYPE K)
*
1001 TA09
Precision Absolute Value Circuit
10k
10k
10k
0.1%
0.1%
0.1%
10k
IN4148
INPUT
2
3
2
–
–
–10 to 10V
0.1%
OUTPUT
6
6
LT1001
LT1001
0 to 10V
3
+
+
IN4148
10k
1001 TA10
0.1%
9
LT1001
Precision Power Supply with Two Outputs
(1) 0V to 10V in 100µV STEPS
(2) 0V to 100V in 1mV STEPS
22k*
+15V
43k*
(select)
100Ω
100Ω 5W
2
3
–
+
2k
2N2219
LT1001
OUTPUT 1
0-10V
25mA
6
IN
914
+15V
8.2k
TRIAD TY-90
VN-46
DIODES =
SEMTECH #
FF-15
LM399
KVD
00000 –
99999 + 1
+
OUTPUT
2
4
KELVIN-VARLEY
DIVIDER
ESI#DP311
0-100V, 25mA
90k*
VN-46
–15V
0.1
*JULIE RSCH. LABS
2.2
+
10k* (select)
#R-44
25k
TRIM–100V
100Ω
680pF
2
3
–
+
D
CLK
Q
Q
6
2N6533
2
3
LT301A
–
+
2k
6
LT1001
33k
+
IN914
74C74
22µF
15Ω
33k
33k
1.8k
+15
+15V
+15V
2N2907
5k
CLAMP SET
IN914
1001 TA11
Dead Zone Generator
BIPOLAR SYMMETRY IS EXCELLENT BECAUSE ONE DEVICE, Q2, SETS BOTH LIMITS
INPUT
Q4
**
V
SET
100k
10k*
DEAD ZONE
CONTROL INPUT
0 to 5V
**
100k
2
Q2
Q3
–
6
LM301A
47pF
10k*
8
3
4.7k
+
100k
2k
1
2
10k**
–
30pF
2N4393
Q1
10k**
10k
2
3
6
LT1001
–
+
3
6
LT1001
V
OUT
+
IN914
+15V
100k
10k
15pF
2N4393
Q6
4.7k
15pF
2
–
4.7k
1k
3.3k
V
V
OUT
6
IN914
SET
Q5
LM301A
3
+
V
IN
*
1% FILM
V
SET
** RATIO MATCH 0.05%
1001 TA12
–15V
Q2, 3, 4, 5 CA 3096 TRANSISTOR ARRAY
10
LT1001
Instrumentation Amplifier with ±300V
Common Mode Range and CMRR > 150dB
+15V
820Ω
820Ω
3
+
–
10k
6
LT1001
OUTPUT
2
+
330k*
0.1µF
S1
S2
S3
**
1µF
INPUT
0.2µF
**
909Ω*
200Ω
GAIN
TRIM
S4
(ACQUIRE)
01
(READ)
02
OUT
IN
OUT
A
74C906
IN
2k*
74C04
74C86
2k*
1
2
3
C
+
–
6
4022
R
LM301A
CLK
2
EN
1k
5.6k*
R1
10k
0.1µF
1k
LM329
A FLYING CAPACITOR CHARGED BY CLOCKED
PHOTO DRIVEN FET SWITCHES CONVERTS A
DIFFERENTIAL SIGNAL AT A HIGH COMMON
MODE VOLTAGE TO A SINGLE ENDED SIGNAL
AT THE LT1001 OUTPUT.
1) ALL DIODES IN4148
2) S1–S4 OPTO MOS SWITCH OFM-1A, THETA-J CORP.
3) *FILM RESISTOR
4) **POLYPROPYLENE CAPACITORS
5) ADJUST R1 for 93 Hz AT TEST POINT
1001 TA13
A
Information furnished by Linear Technology Corporation is believed to be accurate and
reliable. However, no responsibility is assumed for its use. Linear Technology Corpora-
tion makes no representation that the interconnection of its circuits as described herein
will not infringe on existing patent rights.
11
LT1001
W
W
SCHE ATIC DIAGRA
V+
7
6k
6k
1
Q29
8
Q27
Q24
Q25
Q28
40k
Q5
40k
1.5k
25k
Q13
Q14
Q11
Q12
Q6
Q4
3k
Q8
Q7
Q31
Q3
55pF
20pF
Q33
20Ω
OUT
30pF
Q1A Q1B
Q2B
Q2A
+
3
3k
500
500
Q26
Q34
6
Q21
20Ω
Q16
2k
Q10
–
2
Q15
Q32
Q22
T1
2k
Q23
180Ω
Q20
Q17
Q18
Q30
8k 120Ω
Q9
240Ω
Q19
–
V
1001 SS
4
U
PACKAGE DESCRIPTION Dimensions in inches (millimeters) unless otherwise noted.
N8 Package
H Package
J8 Package
8-Lead PDIP (Narrow 0.300)
(LTC DWG # 05-08-1510)
0.400*
8-Lead TO-5 Metal Can (0.200 PCD)
(LTC DWG # 05-08-1320)
8-Lead CERDIP (Narrow 0.300, Hermetic)
(LTC DWG # 05-08-1110)
0.405
CORNER LEADS OPTION
0.335 – 0.370
(8.509 – 9.398)
DIA
(10.287)
MAX
(10.160)
MAX
(4 PLCS)
0.005
(0.127)
MIN
8
7
6
5
0.305 – 0.335
(7.747 – 8.509)
0.040
8
7
6
5
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
0.050
(1.016)
MAX
0.255 ± 0.015*
(6.477 ± 0.381)
0.025
(0.635)
RAD TYP
0.220 – 0.310
0.165 – 0.185
(4.191 – 4.699)
(1.270)
MAX
(5.588 – 7.874)
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
REFERENCE
PLANE
SEATING
PLANE
GAUGE
PLANE
1
2
3
4
0.500 – 0.750
(12.700 – 19.050)
0.200
(5.080)
MAX
1
2
3
4
0.300 BSC
(0.762 BSC)
0.010 – 0.045*
(0.254 – 1.143)
0.130 ± 0.005
0.300 – 0.325
0.045 – 0.065
(1.143 – 1.651)
(3.302 ± 0.127)
(7.620 – 8.255)
0.016 – 0.021**
(0.406 – 0.533)
0.015 – 0.060
(0.381 – 1.524)
0.065
(1.651)
TYP
0.027 – 0.045
(0.686 – 1.143)
0.008 – 0.018
(0.203 – 0.457)
0.009 – 0.015
(0.229 – 0.381)
45°TYP
0° – 15°
0.125
(3.175)
MIN
0.027 – 0.034
(0.686 – 0.864)
0.005
(0.127)
MIN
0.015
(0.380)
MIN
+0.025
–0.015
0.045 – 0.068
(1.143 – 1.727)
0.325
0.385 ± 0.025
(9.779 ± 0.635)
0.125
3.175
MIN
0.200
(5.080)
TYP
+0.635
8.255
(
)
–0.381
0.100 ± 0.010
(2.540 ± 0.254)
0.018 ± 0.003
(0.457 ± 0.076)
0.014 – 0.026
(0.360 – 0.660)
0.100 ± 0.010
(2.540 ± 0.254)
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
N8 0695
0.110 – 0.160
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS.
J8 0694
(2.794 – 4.064)
INSULATING
STANDOFF
H8(TO-5) 0.200 PCD 0595
Tjmax
150°C 100°C/W
θja
Tjmax
150°C 130°C/W
θja
*LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE
AND 0.045" BELOW THE REFERENCE PLANE
0.016 – 0.024
**FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS
(0.406 – 0.610)
Tjmax
θja
θjc
S8 Package
150°C 150°C/W 45°C/W
8-Lead Plastic Small Outline (Narrow 0.150)
0.189 – 0.197*
(4.801 – 5.004)
(LTC DWG # 05-08-1610)
0.010 – 0.020
(0.254 – 0.508)
8
7
6
5
× 45°
0.053 – 0.069
(1.346 – 1.752)
0.004 – 0.010
0.008 – 0.010
(0.203 – 0.254)
(0.101 – 0.254)
0°– 8° TYP
Tjmax
150°C 150°C/W
θja
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
0.016 – 0.050
0.406 – 1.270
0.014 – 0.019
(0.355 – 0.483)
0.050
(1.270)
BSC
* DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
1
2
3
4
SO8 0695
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
LT/GP 0396 2K REV A • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
12
●
●
(408) 432-1900 FAX: (408) 434-0507 TELEX: 499-3977
LINEAR TECHNOLOGY CORPORATION 1983
相关型号：
LT1001AMJG
OP-AMP, 60uV OFFSET-MAX, 0.8MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERAMIC, DIP-8
TI
©2020 ICPDF网 联系我们和版权申明