LSK170B-TO-92-3L [Linear]
Transistor,;
| 型号： | LSK170B-TO-92-3L |
| 厂家： | 
Linear |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LSK170
ULTRA LOW NOISE
SINGLE N-CHANNEL JFET
FEATURES
ULTRA LOW NOISE (f=1kHz)
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
en = 0.9NV/√HZ
BVGSS=40V max
Yfs=22mS (typ)
IG= -500pA max
22pF max
HIGH INPUT IMPEDENCE
LOW CAPACITANCE
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
-55 to +135 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation@+25°C
Maximum Currents
400mW
Gate Forward Current
Maximum Voltages
IG(F)= 10mA
*For equivalent monolithic dual, see LSK389 family.
Gate to Source
VGSS = 40V
VGDS = 40V
Gate to Drain
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BVGSS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
Gate to Source Operating Voltage
-40
V
V
V
VDS = 0, ID = 100µA
VDS = 10V, ID = 1nA
VDS = 10V, ID = 1mA
VGS(OFF)
VGS
-0.2
-2
0.5
LSK170A
LSK170B
LSK170C
2.6
6
10
6.5
12
20
Drain to Source
Saturation Current
IDSS
mA
VGS = 10V, VGS = 0
LSK170D
18
30
-0.5
-1
IG
Gate Operating Current
nA
nA
VDG = 10V, ID = 1mA
IGSS
GfS
GfS
Gate to Source Leakage Current
Full Conduction Transconductance
Typical Conduction Transconductance
VGS = -10V, VDS = 0
22
10
mS
mS
VGD = 10V, VGS = 0, f = 1kHz
VDG = 15V, ID = 1mA
VDS = 10V, ID = 2mA, f = 1kHz,
NBW=1Hz
VDS = 10V, ID = 2mA, f = 10 Hz,
NBW=1Hz
en
en
Noise Voltage
Noise Voltage
0.9
2.5
1.9 nV/√Hz
4
nV/√Hz
CISS
Common Source Input Capacitance
20
5
pF
pF
VDS = 15V, ID = 100µA, f = 1MHz
CRSS
Common Source Reverse Transfer Cap.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201110 06/26/13 Rev#A13 ECN# LSK170
SOT-23
0.89
1.03
0.37
0.51
1
3
2
1.78
2.05
2.80
3.04
1.20
1.40
0.89
1.12
2.10
2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
3. All characteristics MIN/TYP/MAX numbers are absolute values. Negative values indicate electrical polarity only.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201110 06/26/13 Rev#A13 ECN# LSK170
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