LS844-TO-71-6L-ROHS [Linear]
Small Signal Field-Effect Transistor, N-Channel, Junction FET,;
| 型号： | LS844-TO-71-6L-ROHS |
| 厂家： | 
Linear |
| 描述： | Small Signal Field-Effect Transistor, N-Channel, Junction FET, |
| 文件： | 总2页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS843 LS844 LS845
ULTRA LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
ULTRA LOW NOISE
LOW LEAKAGE
LOW DRIFT
en=3nV/Hz TYP.
SOIC-A
IG=15pA TYPs.
I VGS1-2/TI=5µV/ºC max.
TO-71
TOP VIEW
ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max.
ABSOLUTE MAXIMUM RATINGS1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55º to +150°C
-55º to +150°C
SOT-23
TOP VIEW
Operating Junction Temperature
•
Maximum Voltage and Current for Each Transistor1
-VGSS Gate Voltage to Drain or Source 60V
IG(f)
Gate Forward Current
50mA
Maximum Power Dissipation2
Device Dissipation2 @ Free Air - Total
400mW TA=+25°C
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC
LS843 LS844 LS845 UNITS CONDITIONS
I VGS1-2 / TI max.
Drift vs. Temperature
5
10
25
µV/ºC
VDG= 10V
ID= 500µA
ID= 500µA
TA= -55ºC to +125ºC
VGS= 10V
IVGS1-2I max.
Offset Voltage
1
5
15
mV
SYMBOL
BVGSS
CHARACTERISTIC3
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
MIN.
-60
TYP. MAX. UNITS CONDITIONS
--
--
--
--
V
V
VDS= 0
ID= -1nA
BVGGO
±60
IGGO= ±1µA ID= 0
IS= 0
Gfss
Gfs
1500
1000
--
--
--
--
3
µS
µS
%
VDS= 15V VGS= 0
f = 1kHz
Typical Conduction
Mismatch
1500
0.6
VDS= 15V ID= 500µA
│Gfs1-2/Gfs1
│
DRAIN CURRENT
Full Conduction
IDSS
1.5
--
5
1
15
5
mA
%
VDS= 15V VGS= 0
│IDSS1-2/IDSS
│
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
VGS(off)
VGS
-1
--
--
-3.5
-3.5
V
V
VDS= 15V ID= 1nA
-0.5
VDS= 15V ID= 500µA
-IG
--
--
--
--
15
--
50
50
pA
nA
pA
pA
VDG= 15V ID= 500µA
-IG
High Temperature
Reduced VDG
VDG= 15V ID= 500µA TA=+125ºC
VDG= 3V ID= 500µA
VGS= 15V VGS= 0
-IG
5
30
-IGSS
At Full Conduction
--
100
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201144 07/02/2013 Rev#A11 ECN# LS843 LS844 LS845
SYMBOL
CHARACTERISTIC
OUTPUT CONDUCTANCE
Full Conduction
MIN.
TYP. MAX. UNITS CONDITIONS
GOSS
--
--
--
--
40
2.7
0.2
µS
µS
µS
VDS= 15V
VDS= 15V
VGS= 0
GOS
Operating
2.0
ID= 200µA
│GOS 1-2
│
Differential
0.02
COMMON MODE REJECTION
CMRR
CMRR
90
--
100
85
--
--
dB
dB
VDS= 10 to 20V
VDS= 5 to 10V
ID= 500µA
ID= 500µA
-20 log │∆V GS1-2/ ∆V DS
│
NOISE
NF
en
Figure
--
--
--
--
--
--
0.5
7
dB
VDS= 15V
f= 100Hz
VGS= 0
RG= 10MΩ
NBW= 6Hz
Voltage
Voltage
nV/Hz VDS= 15V
NBW= 1Hz
ID= 500µA f= 1kHz
en
11
nV/Hz VDS= 15V
NBW= 1Hz
ID= 500µA f= 10Hz
CAPACITANCE
Input
CISS
CRSS
CDD
--
--
--
--
--
8
3
--
pF
pF
pF
VDS= 15V
VDD= 15V
ID= 500µA f= 1mHz
ID= 500µA f= 1mHz
Reverse Transfer
Drain-to-Drain
0.5
0.210
0.170
Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired
2. Derate 4mW/ºC above 25ºC
3. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201144 07/02/2013 Rev#A11 ECN# LS843 LS844 LS845
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