LS3958-TO-78-6L [Linear]
Transistor,;
| 型号： | LS3958-TO-78-6L |
| 厂家： | 
Linear |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS3954A LS3954 LS3955
LS3956 LS3958
LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW DRIFT
IΔVGS1-2/ΔT│=5µV/°C max.
IG=20pA TYP.
LOW LEAKAGE
LOW NOISE
en=10Nv/√Hz TYP.
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-55 to +150°C
-55 to +150°C
Maximum Voltage and Current for Each Transistor1
-VGSS
-IG(f)
Gate Voltage to Drain or Source 60V
Gate Forward Current 50mV
Top View
SOIC
Top View
TO-71 & TO-78
Maximum Power Dissipation
400mW @ 25ºC2
Device Dissipation @ Free Air - Total
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL CHARACTERISTIC LS3954A LS3954 LS3955 LS3956 LS3958 UNITS CONDITIONS
│∆VGS1-2/∆T│max. Drift vs. Temperature
5
5
10
5
25
10
50
15
100
25
µV/ºC
mV
VDG = 20V, ID=200µA
TA = -55ºC to +125ºC
VDG =20V, ID=200µA
│VGS1-2│max.
Offset Voltage
SYMBOL
BVGSS
CHARACTERISTIC
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Differential
MIN.
TYP. MAX. UNITS CONDITIONS
60
60
--
--
--
--
V
V
VDS= 0
IG= 1µA
BVGGO
IGG= ±1µA
ID= 0
IS= 0
gfss
1000
500
--
2000 4000
µS
µS
%
VDG= 20V
VDG= 20V
VGS= 0
f = 1kHz
gfs
700
1250
±3
ID= 200µA
│gfs1-2/gfs│
±0.6
DRAIN CURRENT
Full Conduction
Differential
IDSS
0.5
--
2
5
mA
%
VDS= 20V
VGS= 0
│IDSS1-2/IDSS
│
±1
±5
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
VGS(off)
VGS
-1
-2
--
-4.5
-4
V
V
VDS= 20V
VDS= 20V
ID= 1nA
-0.5
ID= 200µA
-IG
--
--
--
--
20
--
50
50
--
pA
nA
pA
pA
VDG= 20V
VDG= 20V
VDG= 10V
VDG= 20V
ID= 200µA
-IG
High Temperature
Reduced VDG
ID= 200µA TA=+125 ºC
ID= 200µA
-IG
5
-IGSS
At Full Conduction
--
100
VDS= 0
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
06/05/2013 Rev#A8 ECN# LS3954A LS3954 LS3955 LS3956 LS3958
SYMBOL
CHARACTERISTIC
OUTPUT CONDUCTANCE
Full Conduction
MIN.
TYP. MAX.
UNITS
CONDITIONS
goss
--
--
--
--
5
1
µS
µS
µS
VDG= 20V VGS= 0
gos
Operating
0.1
VDG= 20V ID= 200µA
│gos1-2
│
Differential
0.01
0.1
COMMON MODE REJECTION
CMRR
CMRR
-20 log │ΔVGS1-2/ΔVDS
-20 log │ΔVGS1-2/ΔVDS
NOISE
│
--
--
100
75
--
--
dB
dB
ΔVDS= 10 to 20V
ΔVDS= 5 to 10V
ID=200µA
ID=200µA
│
NF
en
Figure
--
--
--
--
0.5
15
dB
VDS= 20V VGS= 0 RG=10MΩ
f= 100Hz NBW=6Hz
VDS= 20V ID= 200µA f= 10Hz
NBW=1Hz
Voltage
nV/√Hz
CAPACITANCE
Input
CISS
CRSS
CDD
--
--
--
--
--
6
2
--
pF
pF
pF
VDS= 20V VGS= 0 f= 1MHz
Reverse Transfer
Drain-to-Drain
0.1
VDG= 20V
ID= 200µA
0.210
0.170
All dimensions in inches.
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired
2. Derate 4mW/ºC above 25ºC
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
06/05/2013 Rev#A8 ECN# LS3954A LS3954 LS3955 LS3956 LS3958
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