LS3550B-TO-71-6L [Linear]
Transistor,;
| 型号： | LS3550B-TO-71-6L |
| 厂家： | 
Linear |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS3550 SERIES
MONOLITHIC DUAL
PNP TRANSISTORS
FEATURES
6 LEAD SOTꢀ23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING1
EXCELLENT THERMAL TRACKING1
ABSOLUTE MAXIMUM RATINGS2
@ 25 °C (unless otherwise stated)
Maximum Temperatures
*
SOTꢀ23
TOP VIEW
2mV
3ꢁV/°C
1
2
3
6
5
4
B1
E2
B2
C1
E1
C2
Storage Temperature
ꢀ55 to +150 °C
ꢀ55 to +150 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
PDIP
SOIC
TBD
50mA
60V
1
8
7
6
5
1
2
3
4
8
7
6
5
C1
B1
E1
NC
C2 C1
B2 B1
E2 E1
NC NC
C2
B2
E2
NC
2
3
4
Collector Current
Maximum Voltages
Collector to Collector Voltage
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS3550A
LS3550B
LS3550C
SYMBOL
CHARACTERISTIC
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
V
BE1 − VBE2
BE1 BE2
Base to Emitter Voltage Differential
2
3
5
5
10
15 ꢁV/°C
10 nA
1.0 nA/°C
mV
IC = ꢀ100ꢁA, VCE = ꢀ5V
V
−
V
Base to Emitter Voltage Differential
Change with Temperature
IC = ꢀ100ꢁA, VCE = ꢀ5V
TA = ꢀ40°C to +85°C
∆T
I
B1
−
I
B2
Base Current Differential
10
0.5
10
0.5
IC = ꢀ500ꢁA, VCE = ꢀ5V
I
B1 −IB2
Base Current Differential
Change with Temperature
IC = ꢀ500ꢁA, VCE = ꢀ5V
TA = ꢀ40°C to +85°C
∆T
h
FE1hFE2
Current Gain Differential
10
10
15
%
IC = ꢀ1mA, VCE = ꢀ5V
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
LS3550A
LS3550B
LS3550C
SYMBOL
CHARACTERISTIC
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
BVCBO
BVCEO
Collector to Base Breakdown Voltage
ꢀ45
ꢀ40
ꢀ40
ꢀ20
ꢀ20
15
16
IC = ꢀ10ꢁA, IE = 0A
IC = ꢀ5mA, IB = 0A
Collector to Emitter Breakdown Voltage ꢀ45
Collector to Collector Breakdown
Voltage
Emitter to Base Breakdown Voltage3
Collector to Emitter Saturation Voltage
BVCCO
BVEBO
±60
±60
ꢀ6.0
±60
ꢀ6.0
ICC = ꢀ±1ꢁA, IB=IC =0A
IE = ꢀ10ꢁA, IC = 0A
ꢀ6.0
V
IC = ꢀ10mA
IB = ꢀ1mA
VCE(SAT)
ꢀ0.50
ꢀ0.50
ꢀ1.2
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
11/17/2011 Rev#A3 ECN#LS3550
ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)
LS3550A
LS3550B
LS3550C
SYMBOL
CHARACTERISTIC
UNIT CONDITIONS
IC = ꢀ1mA, VCE = ꢀ5V
MIN MAX MIN MAX MIN MAX
150
120
100
100
80
50
40
30
hFE
DC Current Gain
IC = ꢀ10mA, VCE = ꢀ5V
IC = ꢀ50mA, VCE = ꢀ5V
IE = 0A, VCB = ꢀ30V
IE = 0A, VCB = ꢀ20V
IE = 0A, VCB = ꢀ3V
60
ꢀ0.35
ꢀ0.35
ICBO
Collector Cutoff Current
ꢀ0.35 nA
ꢀ0.35
IEBO
Emitter Cutoff Current
ꢀ0.35
±1
ꢀ0.35
±1
IC1C2
Collector to Collector Leakage Current
±1
2
ꢁA
pF
VCC = ±60V, IB=IC =0A
IE = 0A, VCB = ꢀ10V
COBO
fT
Output Capacitance
2
2
Gain Bandwidth Product (Current)
600
600
600 MHz IC = ꢀ1mA, VCE = ꢀ5V
IC = ꢀ100ꢁA, VCE = ꢀ5V
NF
Noise Figure (Narrow Band)
3
3
3
dB
BW = 200Hz
RB = 10ꢂ,
f
= 1kHz
PDIP
TO-78
SOT-23
0.335
0.370
0.305
0.060
1
2
3
4
8
7
6
5
0.95
0.100
0.35
0.50
1
2
3
6
5
4
0.335
0.375
MAX.
0.165
0.185
0.038
0.250
0.040
0.210
0.170
2.80
3.00
1.90
0.016
0.019
DIM. A
*
MIN. 0.500
0.016
0.021
DIM. B
SEATING
PLANE
1.50
1.75
2.60
3.00
0.200
0.145
0.170
0.90
1.30
0.100
0.029
0.045
0.295
0.320
0.09
0.20
DIMENSIONS IN
INCHES
3
7
2
1
5
6
SOIC
0.100
45°
0.10
0.60
0.00
0.15
0.014
0.018
0.028
0.034
DIMENSIONS IN
MILLIMETERS
1
2
3
4
8
0.050
7
0.189
0.196
6
5
0.021
0.150
0.157
0.0040
0.0098
* Standard package is SOT23 6 lead.
Other packages listed are optional. Contact factory regarding
availability of optional packages.
0.0075
0.0098
0.2284
0.2440
DIMENSIONS IN
INCHES
NOTES:
1. Maximum rating for LS3550A, SOT23ꢀ6.
2. Absolute maximum ratings are limiting values above which serviceability may be impaired.
3. The reverse BaseꢀtoꢀEmitter voltage must never exceed ꢀ6.0 Volts. The reverse BaseꢀtoꢀEmitter current must never exceed ꢀ10ꢁA.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-
quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco,
Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon
Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president
of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
11/17/2011 Rev#A3 ECN#LS3550
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