IT122-PDIP-8L-ROHS [Linear]
Transistor,;
Linear 
IT120A IT120 IT121 IT122
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT120 Series
Pin for Pin Compatible
C1
C2
ABSOLUTE MAXIMUM RATINGS NOTE 1
(TA= 25°C unless otherwise noted)
IC
Collector-Current
10mA
Maximum Temperatures
Storage Temperature Range
Operating Temperature Range
Maximum Power Dissipation
Device Dissipation TA=25°C
Linear Derating Factor
-65°C to +150°C
-55°C to +150°C
B1
E1 E2
26 X 29 MILS
B2
ONE SIDE
BOTH SIDES
500mW
TOP VIEW
250mW
2.3mW/°C
4.3W/°C
ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted)
SYMBOL CHARACTERISTIC IT120A IT120 IT121 IT122
UNITS CONDITIONS
BVCBO
BVCEO
BVEBO
BVCCO
hFE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
45
45
6.2
60
200
225
0.5
1
45
45
6.2
60
200
225
0.5
1
45
45
6.2
60
80
100
0.5
1
45
45
6.2
60
80
100
0.5
1
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
V
V
V
V
IC = 10µA
IC = 10µA
IE = 10µA
IE = 0A
IB = 0A
IC = 0A NOTE 2
ICCO = 10µA IB = IE = 0A
IC = 10µA VCE = 5V
IC = 1.0mA VCE = 5V
VCE(SAT) Collector Saturation Voltage
V
IC = 0.5mA IB = 0.05mA
IEBO
Emitter Cutoff Current
MAX. nA
MAX. nA
MAX. pF
MAX. pF
IC = 0
IE = 0
IE = 0
VCC = 0
VEB = 3V
VCB = 45V
VCB = 5V
ICBO
Collector Cutoff Current
Output Capacitance3
Collector to Collector Capacitance3
1
1
1
1
COBO
CC1C2
IC1C2
2
2
2
2
2
2
2
2
Collector to Collector Leakage Current ±500 ±500 ±500 ±500 MAX. nA
VCCO = ±60V IB = IE = 0A
IC = 1mA VCE = 5V
fT
Current Gain Bandwidth Product3
Narrow Band Noise Figure3
220
3
220
3
180
3
180
3
MIN. MHz
MAX. dB
NF
IC = 100µA VCE = 5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
IT120A IT120 IT121 IT122
UNITS CONDITIONS
│VBE1-VBE2
│
Base Emitter Voltage Differential
1
3
2
5
3
5
MAX. mV
IC = 10 µA
VCE = 5V
VCE = 5V
∆│(VBE1-VBE2)│/∆T Base Emitter Voltage Differential
10
20
MAX. µV/°C IC = 10 µA
Change with Temperature3
T = -55°C to +125°C
│IB1-IB2
│
Base Current Differential
2.5
5
25
25
MAX. nA
IC = 10 µA
VCE = 5V
TO-78
TO-71
Six Lead
0.230
0.335
0.370
0.305
DIA.
0.195
0.175
0.209
C1
B1
C2
B2
E2
DIA.
0.335
MAX.
0.030
MAX.
0.165
0.185
0.040
0.210
0.170
E1
0.016
0.019
DIM. A
N/C
N/C
MIN. 0.500
6 LEADS
0.016
0.021
DIM. B
0.500 MIN.
0.050
SEATING
PLANE
0.019
0.016
DIA.
0.200
0.100
0.100
0.029
0.045
C2
B2
E2
C1
B1
3
7
2
1
3
7
2
5
6
1
5
E1
6
0.100
N/C
45°
N/C
45°
0.028
0.046
0.036
0.048
0.028
0.034 Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. Not a production test.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122
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