DPAD10-TO-72-4L-ROHS [Linear]

Diode,;
DPAD10-TO-72-4L-ROHS
型号: DPAD10-TO-72-4L-ROHS
厂家: Linear    Linear
描述:

Diode,

测试
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中文:  中文翻译
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DPAD SERIES  
MONOLITHIC DUAL  
PICO AMPERE DIODES  
FEATURES  
Direct Replacement For SILICONIX DPAD SERIES  
HIGH ON ISOLATION  
DPAD1  
TO-78  
DPAD  
TO-72  
20fA  
Top View  
Case & Substrate  
Top View  
EXCELLENT CAPACITANCE MATCHING  
ABSOLUTE MAXIMUM RATINGS1  
@ 25°C (unless otherwise stated)  
Maximum Temperatures  
ΔCR≤0.2pF  
SSTDPAD  
Storage Temperature  
-55ºC to +150°C  
-55ºC to +150°C  
SOIC  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (DPAD)3  
Maximum Currents  
500mW  
50mA  
Forward Current (DPAD)  
* Case and Pin 4 must be floating on  
all TO-78 case devices  
COMMON ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise stated)  
SYMBOL  
CHARACTERISTIC  
MIN. TYP. MAX. UNITS CONDITIONS  
-45  
DPAD2,5,10,20,50,100 -45  
DPAD1  
Reverse Breakdown  
Voltage  
BVR  
IR= -1µA  
V
SSTDPAD5,50,100  
-30  
VF  
Forward Voltage  
Differential Capacitance  
(ΔCR)  
0.8  
1.5  
0.2  
0.5  
0.8  
2.0  
4.0  
IF= 1mA  
DPAD1  
ALL OTHERS  
DPAD1  
VR1 = VR2 = -5V, f=1MHz  
│CR1- CR2  
pF  
Crss  
Total Reverse Capacitance DPAD2,5,10,20,50,100  
SSTDPAD5,50,100  
VR = -5V, f=1MHz  
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise stated)  
SYMBOL  
CHARACTERISTIC  
DPAD2  
SSTDPAD2  
UNITS CONDITIONS  
(SST)DPAD1  
(SST)DPAD2  
(SST)DPAD5  
(SST)DPAD10  
(SST)DPAD20  
(SST)DPAD50  
(SST)DPAD100  
-1  
-2  
-5  
-5  
Maximum Reverse  
Leakage Current2  
IR  
-10  
-20  
-50  
-100  
pA  
VR = -20V  
-50  
-100  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 201145 5/16/2013 Rev#A4 ECN# DPAD Series  
Figure 1. Operational Amplifier Protection  
Input Differential Voltage limited to 0.8V (typ) by DPADs D1 and D2. Common  
Mode Input voltage limited by DPADs D3 and D4 to ±15V.  
Figure 2. Sample and Hold Circuit  
Typical Sample and Hold circuit with clipping. DPAD diodes reduce offset  
voltages fed capacitively from the JFET switch gate.  
FIGURE 1  
FIGURE 2  
DIMENSIONS IN  
INCHES  
All dimensions in inches  
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.  
2. The DPAD type number denotes its maximum reverse current value in pico amperes. Devices with IR values intermediate to those shown  
are available upon request.  
3. Derate 4 mW/ºC above 25ºC  
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;  
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Linear Integrated Systems. Revised 29 OCT 2006.  
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing  
high-quality discrete components. Expertise brought to LIS is based on processes and products developed  
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,  
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,  
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 201145 5/16/2013 Rev#A4 ECN# DPAD Series  

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