2N4416A-TO-72-4L-ROHS [Linear]

Transistor,;


型号：	2N4416A-TO-72-4L-ROHS
厂家：	Linear
描述：	Transistor,
文件：	总2页 (文件大小：294K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N/PN SST4416 2N4416A

N-CHANNEL JFET

HIGH FREQUENCY AMPLIFIER

FEATURES

Replacement For SILICONIX 2N/SST4416 & 2N4416A

VERY LOW NOISE FIGURE (400 MHz)

EXCEPTIONAL GAIN (400 MHz)

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

4 dB

10 dB

2N SERIES

PN SERIES* SST SERIES

SOT-23

TOP VIEW

Storage Temperature

-55 to +150 °C

-55 to +135 °C

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Currents

300mW

10mA

Gate Current

Maximum Voltages

Gate to Drain or Gate to Source 2N4416

Gate to Drain or Gate to Source 2N4416A

-30V

-35V

*Optional Package For 2N4416

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

2N/PN/SST4416 -30

Gate to Source

Breakdown Voltage

BV_GSS

I_G= -1µA, V_DS= 0V

V_DS= 15V, I_D= 1nA

2N4416A

2N/PN/SST4416

2N4416A

-35

-6

Gate to Source

Cutoff Voltage

V_GS(off)

I_DSS

-2.5

Gate to Source Saturation Current

V_DS= 15V, V_GS= 0V

V_GS= -20V, V_DS= 0V

V_GS= -15V, V_DS= 0V

PN/SST

-0.1

-1.0

7500

100

0.8

I_GSS

Gate Leakage Current

g_fs

g_os

Forward Transconductance

Output Conductance

4000

µS

V_DS= 15V, V_GS= 0V, f = 1kHz

C_iss

C_rss

C_oss

e_n

Input Capacitance²

Reverse Transfer Capacitance²

Output Capacitance²

V_DS= 15V, V_GS= 0V, f = 1MHz

Equivalent Input Noise Voltage

nV/√Hz V_DS= 10V, V_GS= 0V, f = 1kHz

Linear Integrated Systems

•

4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201133 06/19/13 Rev#A9 ECN# 2N4416

HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

100 MHz

400 MHz

SYMBOL

CHARACTERISTIC

UNITS CONDITIONS

MIN MAX MIN MAX

g_iss

b_iss

g_oss

b_oss

G_fs

Input Conductance²

Input Susceptance²

Output Conductance²

Output Susceptance²

Forward Transconductance²

Power Gain²

100

2500

1000

10000

100

µS

V_DS= 15V, V_GS= 0V

1000

4000

G_ps

V_DS= 15V, I_D= 5mA

Noise Figure²

V_DS= 15V, I_D= 5mA, R_G= 1kΩ

SOT-23

0.89

1.03

0.37

0.51

1.78

2.05

2.80

3.04

1.20

1.40

0.89

1.12

2.10

2.64

0.085

0.180

0.013

0.100

0.55

DIMENSIONS IN

MILLIMETERS

*Dimensions in inches

NOTES

1. Absolute maximum ratings are limiting values above which serviceability may be impaired.

2. Not production tested, guaranteed by design.

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its

use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Linear Integrated Systems.

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing

high-quality discrete components. Expertise brought to LIS is based on processes and products developed

at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,

a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,

co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.

Linear Integrated Systems

•

4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201133 06/19/13 Rev#A9 ECN# 2N4416

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