1N4737 [LUNSURE]
1W SILICON PLANAR ZENER DIODES; 1W的硅平面齐纳二极管型号: | 1N4737 |
厂家: | Lunsure Electronic |
描述: | 1W SILICON PLANAR ZENER DIODES |
文件: | 总3页 (文件大小:58K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CE
1N4728 THRU 1N4764
1W SILICON PLANAR ZENER DIODES
CHENYI ELECTRONICS
FEATURES
. Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high power rating.
. Standaards Zener voltage toerance is
10%
Add suffix"A" for 5% tolerance Other tolerance available upon
request
MECHANICAL DATA
. Case: DO-41 glass case
.weight: Approx. 0.35 gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 )
Symbols
Value
Units
Zener current see table "Characteristics"
Power dissipation at TA=25
Junction temperature
1 1)
175
Ptot
TJ
mW
-65 to +175
Storage temperature range
TSTG
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
ELECTRCAL CHARACTERISTICS(TA=25 )
Symbols
RthA
Min
Typ
Max
170 1)
1.2
Units
/W
Thermal resistance junction to ambient
Forward voltage at IF=200mA
VF
V
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
1N4728 THRU 1N4764
1W SILICON PLANAR ZENER DIODES
CHENYI ELECTRONICS
1N4728…1N4764 SILICON PLANAR ZENER DIODES
Nominal
Zener
Voltage 3)
at
Test
Surge
Maximum
regulator
Maximum
reverse leakage current
Maximum Zener Impedance 1)
Current
current
Type
Current 2)
at
IZT
ZZT
10
10
9
at
at TA=0.25
IR
IZT
ZZK
400
IZK
at VR
IZM
mA
276
252
234
217
193
178
162
146
133
121
110
100
91
VZ V
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
IZT mA
76
mA
IR A
100
V
mA
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
1N4728
1N4729
1N4730
1N4731
1N4732
1N4733
1N4734
1N4735
1N4736
1N4737
1N4738
1N4739
1N4740
1N4741
1N4742
1N4743
1N4744
1N4745
1N4746
1N4747
1N4748
1N4749
1N4750
1N4751
1N4752
1N4753
1N4754
1N4755
1N4756
1N4757
1N4758
1N4759
1N4760
1N4761
1N4762
1N4763
1N4764
1.0
69
1.0
64
50
1.0
58
9
1.0
1.0
53
8
500
550
600
1.0
49
7
1.0
45
5
2.0
41
2
3.0
10
37
3.5
4.0
4.5
5.0
7
4.0
34
5.0
5.0
31
6.0
28
7.0
700
25
7.6
11
23
8
8.4
83
12
21
9
9.1
76
13
19
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
9.9
69
15
17
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
61
16
15.5
14
57
18
50
20
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
45
750
22
41
24
38
27
34
30
30
0.25
33
27
1000
1500
2000
3000
5
36
25
39
23
43
22
47
19
51
90
18
56
80
16
62
70
14
68
65
13
75
60
12
82
55
11
91
50
10
100
45
9
Notes:1) The Zener impedance is derived from the 1KHz AC voltage which results when an AC current having an RMS calue equal to 10% of the Zener
current(IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units.
2)Valid provided that electrodes at a distance of 10mm from case are kept at ambient temperature
3)Measured under thermal equilibriun and DC test conditions.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
1N4728 THRU 1N4764
1W SILICON PLANAR ZENER DIODES
CHENYI ELECTRONICS
RATINGS AND CHARACTERISTIC CURVES 1N4728 THRI 1N4764
Admissible power dissipation versus ambient temperature
(Valid provided that leads at a distance of 10mm from case
are kept at ambient temperature)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3
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