GB-PT224A21C [LUCKY-LIGHT]
Phototransistor (3mm); 光电晶体管（3毫米）
| 型号： | GB-PT224A21C |
| 厂家： | 
LUCKY LIGHT ELECTRONIC |
| 描述： | Phototransistor (3mm) |
| 文件： | 总1页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GB-PT224 SERIES
Phototransistor
(3mm)
DESCRIPTION:
PACKAGE DIMENSIONS
The PT224 series consists of a NPN silicon phototransistor encapsulated in blue
transparent, dark blue or water clear plastic package.
Unit: mm
Tol: +/- 0.2mm
3.85
The dark blue plastic package which cuts the visible light is suitable for the detection
of infrared application.
φ3.0
5.3
ABSOLUTE MAXIMUM RATINGS: (Ta=25oC)
1.0
1.0 Max.
Max
100mW
Parameter
Power Dissipation
30V
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
25.4 Min.
5V
20mA
-40oC To +85oC
-55oC To +100oC
0.5
Operating Temperature Range
Storage Temperature Range
1.0
o
Lead Soldering Temperature 1.6mm(.06") from body 260 C for 5 seconds
2.54
NOTES : 1. All dimensions are in millimeters.
c
2. Lead spacing is measured where the leads emerge from the package.
3. Protuded resin under flange is 1.5 mm (0.059") Max.
4. Specifications are subject to change without notice.
b
e
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25oC)
Collector
Dark
Wave Length
of Peak
Sensitivity
λp (nm)
Range of
Collector-
Emitter
On State
Collector
Current
IC (on)
Angular
Response
∆θ(Deg)
Spectral
Bandwidth
λ 0.5 (nm)
Part No.
Lens Color
Current
ID (nA)
Saturation
Voltage
Typ
Typ
Max
Max
Min Typ Max
Typ
+20
GB-PT224A21C
GB-PT224A21BT
GB-PT224A21DB
GB-PT224A22C
GB-PT224A22BT
GB-PT224A22DB
GB-PT224B21C
GB-PT224B21BT
GB-PT224B21DB
GB-PT224B22C
GB-PT224B22BT
GB-PT224B22DB
Water Clear
Blue Transparent
Dark Blue
400~1200
840~1200
0.70 1.30 1.90
0.54 1.00 1.46
0.4
100
980
Water Clear
400~1200
840~1200
1.40 4.00 6.80
1.08 3.08 5.23
0.4
0.4
0.4
100
100
100
+20
+20
+20
980
860
860
Blue Transparent
Dark Blue
Water Clear
400~1200
840~1200
0.70 1.30 1.90
0.54 1.00 1.46
Blue Transparent
Dark Blue
Water Clear
400~1200
840~1200
0.70 2.00 3.40
0.54 1.54 2.62
Blue Transparent
Dark Blue
TESTING CONDITION FOR EACH PARAMETER(Ta=25oC)
0o
10o
20o
30o
Parameter
Symbol
Unit
Test Condition
Ic=100µA
Ee=0mW/cm2
Collector-Emitter Breakdown Voltage
VBR CEO
V
40o
IE=100µA
Ee=0mW/cm2
IC=0.1mA
Emitter-Collector Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Dark Current
VBR ECO
VCE (SAT)
ID
V
V
1.0
0.9
0.8
50o
60o
H=2.5mW/cm2
VCE=10V
nA
Ee=0m/W/cm2
VCC=5V
0.7
70o
80o
90o
Rise Time
Fall Time
TR
TF
µs
µs
IC=1mA
RL=100Ω
0.5
0.3 0.1
0.2
0.4
0.6
VCE=5V
Ee=1mW/cm2
SPATIAL DISTRIBUTION
On State Collector Current
Angular Response
IC(ON)
mA
λ=940nm
∆θ
Deg
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