MUN5130DW1 [LRC]

Dual Bias Resistor Transistors; 双偏置电阻晶体管
MUN5130DW1
型号: MUN5130DW1
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Dual Bias Resistor Transistors
双偏置电阻晶体管

晶体 晶体管
文件: 总11页 (文件大小:281K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
Dual Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
MUN5111DW1T1  
Series  
with Monolithic Bias Resistor Network  
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base–emitter resistor. These  
digital transistors are designed to replace a single device and its external resistor bias network.  
The BRT eliminates these individual components by integrating them into a single device. In  
the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which  
is ideal for low–power surface mount applications where board space is at a premium.  
. Simplifies Circuit Design  
6
5
4
1
2
3
. Reduces Board Space  
SOT 363  
. Reduces Component Count  
CASE 419B STYLE1  
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
6
5
4
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )  
R1  
R2  
Q2  
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V CBO  
V CEO  
I C  
–50  
–50  
R2  
Q1  
R1  
–100 mAdc  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
(One Junction Heated)  
Total Device Dissipation  
T A = 25°C  
Symbol  
Max  
Unit  
6
5
4
P D  
187 (Note 1.)  
256 (Note 2.)  
mW  
XX  
1.5 (Note 1.)  
2.0 (Note 2.)  
670 (Note 1.)  
490 (Note 2.)  
mW/°C  
°C/W  
Derate above 25°C  
1
2
3
Thermal Resistance –  
Junction-to-Ambient  
R θJA  
xx = Device Marking  
= (See Page 2)  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
DEVICE MARKING  
INFORMATION  
See specific marking information in  
the device marking table on page 2 of  
this data sheet.  
Total Device Dissipation  
T A = 25°C  
P D  
250 (Note 1.)  
385 (Note 2.)  
2.0 (Note 1.)  
3.0 (Note 2.)  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance –  
Junction-to-Ambient  
Thermal Resistance –  
Junction-to-Lead  
R θJA  
R θJL  
493 (Note 1.)  
325 (Note 2.)  
188 (Note 1.)  
208 (Note 2.)  
°C/W  
°C/W  
Junction and Storage  
Temperature  
T J , T stg  
–55 to +150  
°C  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
MUN5111dw–1/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Package  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
Marking  
0A  
R 1(K)  
10  
R 2(K)  
10  
Shipping  
MUN5111DW1T1  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
MUN5112DW1T1  
0B  
22  
22  
MUN5113DW1T1  
0C  
47  
47  
MUN5114DW1T1  
0D  
10  
47  
MUN5115DW1T1 (Note 3.)  
MUN5116DW1T1 (Note 3.)  
MUN5130DW1T1 (Note 3.)  
MUN5131DW1T1 (Note 3.)  
MUN5132DW1T1 (Note 3.)  
MUN5133DW1T1 (Note 3.)  
MUN5134DW1T1 (Note 3.)  
MUN5135DW1T1 (Note 3.)  
MUN5136DW1T1 (Note 3.)  
MUN5137DW1T1 (Note 3.)  
0E  
10  
0F  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
0G  
0H  
1.0  
2.2  
4.7  
47  
0J  
0K  
0L  
47  
0M  
0N  
2.2  
100  
47  
47  
100  
22  
0P  
ELECTRICAL CHARACTERISTICS  
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2  
Characteristic  
)
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Base Cutoff Current (V CB = –50 V, I E = 0)  
Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0)  
I CBO  
I CEO  
I EBO  
–100  
–500  
nAdc  
nAdc  
–0.5 mAdc  
–0.2  
Emitter-Base Cutoff Current  
(V EB = –6.0 V, I C = 0)  
MUN5111DW1T1  
MUN5112DW1T1  
MUN5113DW1T1  
MUN5114DW1T1  
MUN5115DW1T1  
MUN5116DW1T1  
MUN5130DW1T1  
MUN5131DW1T1  
MUN5132DW1T1  
MUN5133DW1T1  
MUN5134DW1T1  
MUN5135DW1T1  
MUN5136DW1T1  
MUN5137DW1T1  
–0.1  
–0.2  
–0.9  
–1.9  
–4.3  
–2.3  
–1.5  
–0.18  
–0.13  
–0.2  
–0.05  
–0.13  
Collector-Base Breakdown Voltage (I C = –10 µA, I E = 0)  
V (BR)CBO  
–50  
Vdc  
Vdc  
Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO  
–50  
ON CHARACTERISTICS (Note 4.)  
Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA)  
(I C= –10mA, I B= –5mA) MUN5130DW1T1/MUN5131DW1T1  
(I C= –10mA, IB= –1mA) MUN5115DW1T1/MUN5116DW1T1  
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1  
V CE(sat)  
–0.25  
Vdc  
3. New resistor combinations. Updated curves to follow in subsequent data sheets.  
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%  
MUN5111dw–2/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
ELECTRICAL CHARACTERISTICS  
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)  
(Continued)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS(Note 5.)  
DC Current Gain  
h FE  
35  
60  
MUN5111DW1T1  
MUN5112DW1T1  
MUN5113DW1T1  
MUN5114DW1T1  
MUN5115DW1T1  
MUN5116DW1T1  
MUN5130DW1T1  
MUN5131DW1T1  
MUN5132DW1T1  
MUN5133DW1T1  
MUN5134DW1T1  
MUN5135DW1T1  
MUN5135DW1T1  
MUN5135DW1T1  
60  
100  
140  
140  
250  
250  
5.0  
15  
(V CE = –10 V, I C = –5.0 mA)  
80  
80  
160  
160  
3.0  
8.0  
15  
27  
80  
140  
130  
140  
130  
140  
80  
80  
80  
80  
Output Voltage (on)  
V OL  
Vdc  
MUN5111DW1T1  
MUN5112DW1T1  
MUN5114DW1T1  
MUN5115DW1T1  
MUN5116DW1T1  
MUN5130DW1T1  
MUN5131DW1T1  
MUN5132DW1T1  
MUN5133DW1T1  
MUN5134DW1T1  
MUN5135DW1T1  
MUN5113DW1T1  
MUN5136DW1T1  
MUN5137DW1T1  
(V CC = –5.0 V, V B = –2.5 V, R L = 1.0 k)  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
–0.2  
(V CC = –5.0 V, V B = –3.5 V, R L = 1.0 k)  
(V CC = –5.0 V, V B = –5.5 V, R L = 1.0 k)  
(V CC = –5.0 V, V B = –4.0 V, R L = 1.0 k)  
–4.9  
–0.2  
V OH  
Vdc  
Output Voltage (off) (V CC = –5.0 V, V B = –0.5 V, R L = 1.0 k)  
(V CC = –5.0 V, V B = –0.05 V, R L = 1.0 k) MUN5130DW1T1  
(V CC = –5.0 V, V B = –0.25 V, R L = 1.0 k) MUN5115DW1T1  
MUN5116DW1T1  
MUN5131DW1T1  
MUN5133DW1T1  
MUN5111dw–3/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
ELECTRICAL CHARACTERISTICS  
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS(Note 5.)  
Input Resistor  
MUN5111DW1T1  
MUN5112DW1T1  
MUN5113DW1T1  
MUN5114DW1T1  
MUN5115DW1T1  
MUN5116DW1T1  
MUN5130DW1T1  
MUN5131DW1T1  
MUN5132DW1T1  
MUN5133DW1T1  
MUN5134DW1T1  
MUN5135DW1T1  
MUN5136DW1T1  
MUN5137DW1T1  
R 1  
7.0  
10  
13  
kΩ  
15.4  
32.9  
7.0  
22  
28.6  
61.1  
13  
47  
10  
7.0  
10  
13  
3.3  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
6.1  
0.7  
1.3  
1.5  
2.9  
3.3  
6.1  
3.3  
6.1  
15.4  
1.54  
70  
28.6  
2.86  
130  
61.1  
2.2  
100  
47  
32.9  
Resistor Ratio  
MUN5111DW1T1/MUN5112DW1T1/ R 1 /R 2  
MUN5113DW1T1/MUN5136DW1T1  
MUN5114DW1T1  
0.8  
0.17  
1.0  
0.21  
1.2  
0.25  
MUN5115DW1T1/MUN5116DW1T1  
0.8  
1.0  
1.2  
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1  
MUN5133DW1T1  
0.055 0.1  
0.38 0.47  
0.185  
0.56  
MUN5134DW1T1  
0.038 0.047 0.056  
1.7 2.1 2.6  
MUN5135DW1T1  
MUN5137DW1T1  
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%  
300  
250  
200  
150  
100  
50  
0
–50  
0
50  
100  
150  
T A , AMBIENT TEMPERATURE (°C)  
Figure 1. Derating Curve  
MUN5111dw–4/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111DW1T1  
1000  
100  
10  
1
0.1  
0.01  
0
20  
40  
50  
1
10  
100  
I C , COLLECTOR CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 3. DC Current Gain  
Figure 2. V CE(sat) versus I C  
100  
10  
4
3
2
1
1
0.1  
0.01  
0.001  
0
0
0
1
2
3
4
5
6
7
8
9
10  
10  
20  
30  
40  
50  
V R , REVERSE BIAS VOLTAGE (VOLTS)  
V in , INPUT VOLTAGE (VOLTS)  
Figure 4. Output Capacitance  
Figure 5. Output Current versus Input Voltage  
100  
10  
1
0.1  
0
10  
20  
30  
40  
50  
I C , COLLECTOR CURRENT (mA)  
Figure 6. Input Voltage versus Output Current  
MUN5111dw–5/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5112DW1T1  
1000  
100  
10  
10  
1
0.1  
0.01  
0
20  
40  
50  
1
10  
100  
I C , COLLECTOR CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 7. V CE(sat) versus I C  
Figure 8. DC Current Gain  
100  
10  
4
3
2
1
1
0.1  
0.01  
0.001  
0
0
0
1
2
3
4
5
6
7
8
9
10  
10  
20  
30  
40  
50  
V R , REVERSE BIAS VOLTAGE (VOLTS)  
V in , INPUT VOLTAGE (VOLTS)  
Figure 9. Output Capacitance  
Figure 10. Output Current versus Input voltage  
100  
10  
1
0.1  
0
10  
20  
30  
40  
50  
I C ,COLLECTOR CURRENT (mA)  
Figure 11. Input Voltage versus Output Current  
MUN5111dw–6/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5113DW1T1  
1000  
100  
10  
1
0.1  
0.01  
0
20  
40  
50  
1
10  
100  
I C , COLLECTOR CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 12. V CE(sat) versus I C  
Figure 13. DC Current Gain  
1
100  
10  
0.8  
0.6  
0.4  
0.2  
0
1
0.1  
0.01  
0.001  
0
1
2
3
4
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
V R , REVERSE BIAS VOLTAGE (VOLTS)  
V in , INPUT VOLTAGE (VOLTS)  
Figure 14. Output Capacitance  
Figure 15. Output Current versus Input oltage  
100  
10  
1
0.1  
0
10  
20  
30  
40  
50  
I C , COLLECTOR CURRENT (mA)  
Figure 16. Input Voltage versus Output Current  
MUN5111dw–7/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5114DW1T1  
1
180  
160  
140  
120  
100  
80  
0.1  
0.01  
0.001  
60  
40  
20  
0
0
20  
40  
60  
80  
1
2
3
4
5
10 15 20 40 50 60 70 80 90 100  
I C , COLLECTOR CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 17. V CE(sat) versus I C  
Figure 18. DC Current Gain  
4.5  
4
100  
3.5  
3
2.5  
2
10  
1.5  
1
0.5  
0
0
1
0
1
2
3
4
5
6
7
8
9
10  
2
4
6
8
10 15 20 25 30 35 40 45 50  
V R , REVERSE BIAS VOLTAGE (VOLTS)  
V in , INPUT VOLTAGE (VOLTS)  
Figure 19. Output Capacitance  
Figure 20. Output Current versus Input oltage  
10  
1
0.1  
0
10  
20  
30  
40  
50  
I C ,COLLECTOR CURRENT (mA)  
Figure 21. Input Voltage versus Output Current  
MUN5111dw–8/11  
LESHAN RADIO COMPANY, LTD.  
MUN5311DW1T1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5115DW1T1  
1000  
100  
1
10  
100  
I C , COLLECTOR CURRENT (mA)  
Figure 22. DC Current Gain  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5116DW1T1  
1000  
100  
1
10  
100  
I C , COLLECTOR CURRENT (mA)  
Figure 23. DC Current Gain  
MUN5111dw–9/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5136DW1T1  
1000  
100  
10  
1
0.1  
1
0.01  
0
1
2
3
4
5
6
7
1
10  
100  
I C , COLLECTOR CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 25. DC Current Gain  
Figure 24. Maximum Collector Voltage versus  
Collector Current  
100  
10  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1
0.1  
0
1
2
3
4
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
60  
V R , REVERSE BIAS VOLTAGE (VOLTS)  
V in , INPUT VOLTAGE (VOLTS)  
Figure 26. Output Capacitance  
Figure 27. Output Current versus Input oltage  
100  
10  
1
0
2
4
6
8
10  
12  
14  
16  
18  
20  
I C , COLLECTOR CURRENT (mA)  
Figure 28. Input Voltage versus Output Current  
MUN5111dw–10/11  
LESHAN RADIO COMPANY, LTD.  
MUN5111DW1T1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5137DW1T1  
1000  
100  
10  
1
0.1  
0.01  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
1
10  
100  
I C , COLLECTOR CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 29. Maximum Collector Voltage versus  
Collector Current  
Figure 30. DC Current Gain  
1.4  
100  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
10  
1
0.1  
0.01  
0.001  
0
1
2
3
4
5
6
7
8
9
10  
11  
0
10  
20  
30  
40  
50  
60  
V in , INPUT VOLTAGE (VOLTS)  
V R , REVERSE BIAS VOLTAGE (VOLTS)  
Figure 32. Output Current versus Input oltage  
Figure 31. Output Capacitance  
100  
10  
1
0
5
10  
15  
20  
25  
I C , COLLECTOR CURRENT (mA)  
Figure 33. Input Voltage versus Output Current  
MUN5111dw–11/11  

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