MUN2133RT1 [LRC]
Bias Resistor Transistor; 偏置电阻晶体管
| 型号： | MUN2133RT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor |
| 文件： | 总7页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
PNP SILICON
BIAS RESISTOR
TRANSISTOR
Use the Device Number to order the 7 inch/3000 unit reel.
3
PIN3
Collector
PIN2
base
R1
(Output)
2
(Input)
R2
1
PIN2
Emitter
(Ground)
CASE 318–03 , STYLE 1
( SC – 59 )
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Symbol
VCBO
V CEO
IC
Value
Unit
Vdc
Collector-Base Voltage
50
50
Collector-Emitter Voltage
Vdc
Collector Current
Total Power Dissipation @ T A = 25°C (1)
100
200
1.6
mAdc
mW
P D
Derate above 25°C
mW/°C
THERMALCHARACTERISTICS
Rating
Symbol
R θ JA
Value
625
Unit
°C/W
°C
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
T J , T stg
–65 to +150
260
°C
T L
10
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
6A
6B
R1 (K)
10
22
47
10
R2 (K)
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1(2)
MUN2116RT1(2)
MUN2130RT1(2)
MUN2131RT1(2)
MUN2132RT1(2)
MUN2133RT1(2)
MUN2134R T1(2)
10
22
47
47
6C
6D
6E
6F
6G
6H
6J
6K
6L
10
4.7
1.0
2.2
4.7
4.7
22
1.0
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
P1–1/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICBO
I CEO
I EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
nAdc
nAdc
mAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN2111RT1
-
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
-
-
-
-
-
-
-
-
-
-
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
V(BR)CEO
50
50
Vdc
Vdc
(3)
Collector-Emitter Breakdown Voltage (IC=2.0mA, IB=0)
-
(3)
ON CHARACTERISTICS
DC Current Gain
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
hFE
35
60
60
100
140
140
250
250
5.0
15
-
-
-
-
-
-
-
-
-
-
-
(VCE = 10 V, IC = 5.0 mA)
80
80
160
160
3.0
8.0
15
27
80
140
130
80
Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA)
(IC = 10 mA, IB = 0.3 mA) MUN2111RT1 MUN2112RT1
MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2130RT1
VCE(sat)
Vdc
-
-
-
-
-
-
0.25
0.25
0.25
(IC = 10 mA, IB = 5.0 mA)
(IC = 10 mA, IB = 1.0 mA)
MUN2131RT1
MUN2116RT1 MUN2132RT1
MUN2134RT1
Output Voltage (on)
VOL
Vdc
(VCC=5.0V,VB=2.5V, RL=1.0kΩ)
MUN2111RT1
MUN2112RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1
-
-
-
-
0.2
0.2
MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
MUN2134RT1
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ)
MUN2113RT1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
P1–2/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, RL = 1.0kΩ)
VOH
4.9
—
—
Vdc
(VCC= 5.0V, VB = 0.050 V, RL =1.0kΩ)
(VCC= 5.0V, VB = 0.25 V, RL =1.0kΩ)
MUN2130RT1
MUN2115RT1
MUN2116RT1
MUN2131RT1
MUN2132RT1
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Input Resistor
R 1
7.0
15.4
32.9
7.0
10
22
13
28.6
61.1
13
kΩ
47
10
7.0
10
13
3.3
4.7
1.0
2.2
4.7
4.7
22
6.1
0.7
1.3
1.5
2.9
3.3
6.1
3.3
6.1
15.4
0.8
28.6
1.2
Resistor Ratio MUN2111RT1 MUN2112RT1 MUN2113RT1
MUN2114RT1
R 1 /R 2
1.0
0.21
—
0.17
—
0.25
—
MUN2115RT1 MUN2116RT1
MUN2130RT1 MUN2131RT1 MUN2132RT1
MUN2133RT1
0.8
1.0
0.1
0.47
1.2
0.055
0.38
0.185
0.56
MUN2134RT1
P1–3/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2111RT1
250
200
150
100
50
1
I
C /I B =10
T
A = –25°C
25°C
75°C
0.1
R
θJA = 625°C/W
0
0.01
–50
0
50
10
150
0
20
40
60
80
AMBIENTTEMPERATURE(°C)
I C , COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. V
versus I
CE(sat)
C
1000
100
10
4
3
2
1
0
V
CE = 10 V
f = 1 MHz
E = 0 V
A = 25°C
l
T
T
A =75°C
25°C
–25°C
1
10
100
0
10
20
30
40
50
V R , REVERSE BIAS VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 4. Output Capacitance
Figure 3. DC Current Gain
100
100
10
25°C
75°C
V
O = 0.2 V
T
A = –25°C
10
1
T
A = –25°C
75°C
25°C
0.1
1
0.01
V
O = 5 V
0.001
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P1–4/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2112RT1
10
1000
V
CE = 10 V
I
C /I B =10
T
A = –25°C
25°C
T
A =75°C
75°C
25°C
1
100
–25°C
0.1
0.01
10
0
20
40
60
80
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
Figure 7. V CE(sat) versus I C
4
3
2
1
0
100
25°C
75°C
f = 1 MHz
E = 0 V
T
A = –25°C
l
10
1
T
A = 25°C
0.1
0.01
V
O = 5 V
9
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O = 0.2 V
T
A = –25°C
25°C
10
75°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
P1–5/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2113RT1
1
1000
I
C /I B =10
T
A =75°C
T
A = –25°C
75°C
25°C
25°C
–25°C
0.1
100
0.01
10
0
10
20
30
40
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
Figure 12. V CE(sat) versus I C
1
0.8
0.6
0.4
0.2
0
100
25°C
T
A = 75°C
f = 1 MHz
E = 0 V
A = 25°C
l
–25°C
10
1
T
0.1
0.01
V
O = 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O = 0.2 V
T
A=–25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
P1–6/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2114RT1
1
180
160
140
120
100
80
T
A =75°C
I
C /I B =10
V
CE= 10V
T
A = –25°C
25°C
–25°C
25°C
75°C
0.1
60
40
20
0.01
0
0
10
20
30
40
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
Figure 17. V CE(sat) versus I C
100
4.5
4
f = 1 MHz
E = 0 V
A= 25°C
T
A = 75°C
25°C
l
3.5
3
T
–25°C
2.5
2
10
1.5
1
V
O = 5 V
0.5
0
1
0
2
4
6
8
10 15
20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
12 V
10
T
A = –25°C
V
O = 0.2 V
25°C
Typical Application
for PNP BRTs
75°C
1
LOAD
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 22. Inexpensive, Unregulated Current
Source
Figure 21. Input Voltage versus Output Current
P1–7/7
相关型号：
MUN2133T3
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN, BIP General Purpose Small Signal
ONSEMI
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