LRB751BS-40T3G [LRC]
SCHOTTKY BARRIER DIODE;型号: | LRB751BS-40T3G |
厂家: | LESHAN RADIO COMPANY |
描述: | SCHOTTKY BARRIER DIODE 二极管 |
文件: | 总3页 (文件大小:430K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
SCHOTTKYBARRIERDIODE
LRB751BS-40T5G
S-LRB751BS-40T5G
zApplications
Low current rectification
Features
z
Extremelysmall surface mounting type. (SOD882)
1
V
F
Low
High reliability.
We declare that the material of product
compliance with RoHS requirements.
2
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
SOD882
z
Construction
Silicon epitaxial planar
2
1
Anode
Cathode
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LRB751BS-40T1G
S-LRB751BS-40T1G
5
5000/Tape&Reel
LRB751BS-40T3G
5
5
8000/Tape&Reel
10000/Tape&Reel
S-LRB751BS-40T3G
LRB751BS-40T5G
S-LRB751BS-40T5G
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
40
30
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
30
200
125
Io
IFSM
Tj
mA
mA
℃
Storage temperature
-40 to +125
Tstg
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Conditions
Symbol
Min.
Typ.
2
Max.
0.37
0.5
-
Unit
V
VF
IR
IF=1mA
-
-
-
Reverse current
VR=30V
µA
pF
Capacitance between terminals
VR=1V , f=1MHz
Ct
Rev.B 1/3
LESHAN RADIO COMPANY, LTD.
LRB751BS-40T5G , S-LRB751BS-40T5G
zElectrical characteristic curves
100
100000
10000
1000
100
Ta=125℃
Ta=75℃
Ta=75℃
10
Ta=125℃
1
Ta=25℃
Ta=25℃
Ta=-25℃
0.1
0.01
Ta=-25℃
10
0.001
1
0
100 200 300 400 500 600 700 800
0
5
10 15 20 25 30 35 40
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
f=1MHz
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Rev.B 2/3
LESHAN RADIO COMPANY, LTD.
LRB751BS-40T5G , S-LRB751BS-40T5G
OUTLINE AND DIMENSIONS
SOLDERING FOOTPRINT
Rev.B 3/3
相关型号:
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