L2SD1781KQLT1G_11 [LRC]

Medium Power Transistor (32V, 0.8A) High current capacity in compact; 在紧凑型中等功率晶体管( 32V , 0.8A ),高电流能力
L2SD1781KQLT1G_11
型号: L2SD1781KQLT1G_11
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Medium Power Transistor (32V, 0.8A) High current capacity in compact
在紧凑型中等功率晶体管( 32V , 0.8A ),高电流能力

晶体 晶体管
文件: 总4页 (文件大小:115K)
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L2SD1781KQLT3G

Medium Power Transistor (32V, 0.8A) High current capacity in compact

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0 LRC

L2SD1781KRLT1

Medium Power Transistor(32V, 0.8A)

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10 LRC

L2SD1781KRLT1G

Medium Power Transistor(32V, 0.8A)

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25 LRC

L2SD1781KRLT3G

Medium Power Transistor (32V, 0.8A) High current capacity in compact

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0 LRC

L2SD2114KLT1

Epitaxial planar type NPN silicon transistor

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11 LRC

L2SD2114KLT1

Epitaxial planar type NPN silicon transistor

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9 LRC

L2SD2114KVLT1

Epitaxial planar type NPN silicon transistor

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8 LRC

L2SD2114KVLT1

Epitaxial planar type NPN silicon transistor

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18 LRC

L2SD2114KVLT1G

Epitaxial planar type NPN silicon transistor

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17 LRC

L2SD2114KVLT1G

Epitaxial planar type NPN silicon transistor

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1 LRC

L2SD2114KVLT1G_11

Epitaxial planar type NPN silicon transistor High DC current gain

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11 LRC

L2SD2114KVLT3G

Epitaxial planar type NPN silicon transistor High DC current gain

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16 LRC

L2SD2114KWLT1

Epitaxial planar type NPN silicon transistor

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23 LRC

L2SD2114KWLT1

Epitaxial planar type NPN silicon transistor

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19 LRC

L2SD2114KWLT1G

Epitaxial planar type NPN silicon transistor

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14 LRC