L2SC4081ST3G [LRC]
General Purpose Transistors NPN Silicon;
| 型号： | L2SC4081ST3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors NPN Silicon |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L2SC4081QT1G Series
FEATURE
ƽLow Cob,Cob=2pF(Typ.).
ƽEpitaxial planar type.
ƽPNP complement:L2SA1576A
3
ƽ
We declare that the material of product compliance with RoHS requirements.
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
SC-70/SOT– 323
L2SC4081QT1G
BQ
3000/Tape&Reel
L2SC4081QT3G
L2SC4081RT1G
L2SC4081RT3G
BQ
BR
BR
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3
COLLECTOR
1
BASE
L2SC4081ST1G
BS
BS
2
EMITTER
L2SC4081ST3G
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
50
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
60
V
7.0
V
150
0.15
150
mAdc
W
P C
T j
°C
T stg
-
55
~
+150
°C
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
V (BR)CEO
50
—
—
V
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
V (BR)EBO
V (BR)CBO
I CBO
7
—
—
—
—
—
V
V
60
—
—
—
0.1
0.1
µA
µA
Emitter cutoff current
I EBO
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
V CE(sat)
h FE
—
—
0.4
V
120
––
560
––
f T
—
—
180
2.0
––
MHz
pF
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
C ob
3.5
(V CB = 12 V, I E= 0A, f =1MHz )
hFE
values are classified as follows:
Q
R
S
*
hFE
120~270
180~390
270~560
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
0.50mA
50
100
VCE= 6 V
TA = 25°C
20
10
50
80
60
40
20
0
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V
BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
10
500
8
6
4
2
0
200
100
50
20
10
0
4
8
12
16
20
0.2
0.5
1
2
5
10
20
50
100
200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
collector current
Fig.5 DC current gain vs. collector current ( )
0.5
500
0.2
200
100
50
0.1
0.05
0.02
0.01
20
10
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
5
200
100
50
2
1
–0.5
–1
–2
–5
–10
–20
–50
–100
0.2
0.5
1
2
5
10
20
50
I E, EMITTER CURRENT (mA)
V CB, COLLECTOR TO BASE VOLTAGE (V)
EB, EMITTER TO BASE VOLTAGE (V)
V
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
SC
-70 / SOT-323
D
NOTES:
e1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
H
E
c
2.00
2.40
0.079
0.095
A2
A
0.05 (0.002)
L
GENERIC
A1
MARKING DIAGRAM
SOLDERING FOOTPRINT*
M
XX
0.65
0.025
0.65
0.025
1
XX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
1.9
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
Rev.O 5/5
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