BI-DORECTIONAL [LRC]

DO-35 GLASS-SEALED BI-DIRECTIONAL TRIGGER DIODES; DO- 35玻封双向触发二极管
BI-DORECTIONAL
型号: BI-DORECTIONAL
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

DO-35 GLASS-SEALED BI-DIRECTIONAL TRIGGER DIODES
DO- 35玻封双向触发二极管

二极管 双向触发二极管
文件: 总2页 (文件大小:109K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
BI-DIRECTIONAL  
TRIGGER DIODES  
DO-35  
DO-35 GLASS-SEALED BI-DIRECTIONAL TRIGGER DIODES  
Min  
Typ  
Max  
Unit  
Package  
mm  
Parameter  
Symbol  
Test Condition  
Type  
DB-3  
36  
28  
32  
V
DB-4  
DB-6  
DB-3  
DB-4  
DB-6  
DB-3  
DB-4  
DB-6  
45  
70  
3
35  
56  
40  
60  
V BO  
Breakdown Voltage  
See Fig 1  
See Fig 1  
Breakover Voltage  
Symmetry  
V
V
3
+VBO – –VBO  
4
5
5
I =  
IBO toIF=10mA  
± V  
V O  
I BO  
t r  
Dynamic Breakback  
Voltage  
10  
See Fig 1  
5
V
See Fig 2  
Output Voltage  
Breakdown Current  
Rise Time  
100  
µA  
µS  
1.5  
See Fig 3  
Vm=0.5VBO(Max)  
DO – 35  
(mm)  
10  
µA  
I B  
Leakage Current  
See Fig 1  
LIMITING VALUES  
Value  
Unit  
Parameter  
Symbol  
t a =50  
°C  
150  
mW  
A
Power Dissipation  
P C  
I Fmax  
T r  
t p =10  
120pps  
T a < 40°C  
µs  
DB-3  
DB-4  
DB-6  
2.0  
2.0  
16  
Peak Pulse Current  
40 to 125  
40 to 110  
°C  
Storage and Operating Junction Temperatuer Range  
T J  
9B–1/2  
LESHAN RADIO COMPANY, LTD.  
DO-35  
DO-35 GLASS-SEALED BI-DIRECTIONAL TRIGGER DIODE  
+IF  
IP  
90%  
10mA  
10K500KΩ  
0.1µF  
DIAC  
VO  
10%  
IBO  
IB  
220V  
50Hz  
+V  
-V  
20Ω  
0.5VBO  
V  
tr  
VBO  
FIG-3  
2,  
R,  
IP=0.5A  
FIG-2  
-IF  
Test circuit see diagram 2. Adjust  
R for I =0.5A  
Test circuit for output voltage  
FIG-1 I - V  
Current - voltage characterisitics  
mW  
160  
load up to 1500 watts  
120  
60  
TRIAC  
3.3KΩ  
200KΩ  
120V  
50Hz  
DIAC  
40  
Tamp(°C)  
0
0
0.1µF  
100V  
50  
100  
FIG-5  
FIG-4  
DIAC-TRIAC  
Power dissipation versus ambient temperature(maximum values)  
Typical DIAC-TRIAC full-wave Phase control  
1.1  
1.08  
1.06  
1.04  
VBO ( TJ ) I VBO ( TJ =25°C )  
2
F=100Hz  
TJ=25°C  
1
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
tpµs  
1.02  
1
T(°C)  
10  
102  
103  
104  
25  
50  
75  
100  
FIG-7  
FIG-6 VBO  
Peak pulse Current versus pulse duration  
(maximum values)  
Relative variation of VBO versus junction temperature  
(typical values)  
9B–2/2  

相关型号:

BI-UM-1-2

INSULATOR FOR LARGE C&D BATTERY
ETC

BI-UM-3-4

BATTERY INSULATOR
ETC

BI10

LED Bar-Graph Display
ETC

BI15-005

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-01

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-02

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-04

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-05

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-06

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-08

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-10

One-Phase Si-Bridge Rectifiers
SEMIKRON

BI15-12

One-Phase Si-Bridge Rectifiers
SEMIKRON