BCW61DLT1 [LRC]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | BCW61DLT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总6页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
GeneralPurposeTransistors
PNP Silicon
BCW61BLT1
BCW61CLT1
BCW61DLT1
3
COLLECTOR
1
BASE
3
2
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
– 32
Unit
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
– 32
Vdc
– 5.0
– 100
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0 )
V (BR)CEO
– 32
—
—
Vdc
Vdc
Emitter–Base Breakdown Voltage
(I E= –1.0 µAdc, I C = 0)
V (BR)EBO
I CES
– 5.0
Collector Cutoff Current
(VCE = –32 Vdc, )
—
—
–20
–20
nAdc
(VCE = –32 Vdc, TA = 150°C)
µAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M10–1/6
LESHAN RADIO COMPANY, LTD.
BCW61BLT1 BCW61CLT1 BCW61DLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
—
( IC= – 10 µAdc, VCE = – 5.0 Vdc )
BCW61B
BCW61C
BCW61D
30
40
100
—
—
—
( IC= – 2.0 mAdc, VCE = – 5.0 Vdc )
( IC= – 50 mAdc, VCE = – 1.0 Vdc )
hFE
hFE
hFE
—
—
—
BCW61B
BCW61C
BCW61D
140
250
380
310
460
630
BCW61B
BCW61C
BCW61D
80
100
100
—
—
—
AC Current Gain
( VCE = – 5.0Vdc, IC= – 2.0 mAdc,
f= 1.0 kHz )
BCW61B
BCW61C
BCW61D
175
250
350
350
500
700
Collector–Emitter Saturation Voltage
( IC = – 50 mAdc, IB = – 1.25 mAdc )
( IC = – 10 mAdc, IB = – 0.25 mAdc )
Base–Emitter Saturation Voltage
( IC = – 50 mAdc, IB = – 1.25 mAdc )
( IC = – 10 mAdc, IB = – 0.25 mAdc )
Base–Emitter On Voltage
V CE(sat)
V BE(sat)
V BE(on)
Vdc
Vdc
Vdc
—
—
– 0.55
– 0.25
– 0.68
–0.6
– 1.05
– 0.85
( IC = – 2.0 mAdc, VCE = – 5.0 Vdc )
– 0.6
– 0.75
SMSMALL–SIGNAL CHARACTERISTICS
Output Capacitance
C obo
NF
—
—
6.0
6.0
pF
dB
(VCE = – 10 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
(V CE = – 5.0 Vdc, I C = – 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time
t on
t off
—
—
150
800
ns
ns
(I C = – 10 mAdc, I B1 = – 1.0 mAdc)
Turn–Off Time
(I B2 =– 1.0 mAdc, V BB = – 3.6 Vdc, R 1 = R 2 = 5.0 kΩ, R L = 990 Ω)
M10–2/6
LESHAN RADIO COMPANY, LTD.
BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL NOISE CHARACTERISTICS
(V CE = –5.0 Vdc, T A = 25°C)
1.0
10
7.0
5.0
3.0
2.0
1.0
BANDWIDTH = 1.0 Hz
7.0
5.0
3.0
2.0
BANDWIDTH = 1.0 Hz
~
~
RS
~
R S
0
~
IC=1.0mA
IC=10 µA
30µA
300µA
100µA
1.0
0.7
0.5
100µA
300µA
1.0mA
30µA
10µA
0.3
0.2
0.1
10
20
50 100
200
500 1.0k 2.0k
5.0k 10 k
10
20
50 100
200
500 1.0k 2.0k
5.0k 10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V CE = –5.0 Vdc, T A = 25°C)
1.0M
1.0M
500k
200k
100k
50k
500k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
20k
10k
5.0k
0.5 dB
10k
5.0k
2.0k
0.5 dB
1.0 dB
1.0 dB
2.0k
1.0k
1.0k
500
2.0 dB
2.0 dB
3.0 dB
500
3.0 dB
5.0dB
200
100
200
100
5.0 dB
10
20 30
50 70 100
200 300 500 700 1.0K
10
20 30
50 70 100
200 300 500 700 1.0K
I C , COLLECTOR CURRENT (µA)
I C , COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
1.0M
500k
10 Hz to 15.7KHz
200k
100k
Noise Figure is Defined as:
50k
20k
e n 2 +4KTRS +In2 R S
2
1/ 2
NF = 20 log 10 ( –––––––––––––––)
4KTR S
10k
5.0k
2.0k
0.5 dB
e n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I n = Noise Current of the Transistor referred to the input. (Figure 4)
1.0 dB
2.0 dB
1.0k
500
K
T
= Boltzman’s Constant (1.38 x 10 –23 j/°K)
3.0 dB
5.0 dB
= Temperature of the Source Resistance (°K)
200
100
R s = Source Resistance ( Ω )
10
20 30
50 70 100
200 300 500 700 1.0K
IC , COLLECTOR CURRENT (µA)
Figure 5. Wideband
M10–3/6
LESHAN RADIO COMPANY, LTD.
BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL STATIC CHARACTERISTICS
100
80
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0
I B= 400 µA
T A = 25°C
PULSE WIDTH =300 µs
DUTY CYCLE
TA= 25°C
BCW61
350µA
<2.0%
300µA
250µA
50 mA
100 mA
I C= 1.0 mA
10 mA
200µA
150µA
100µA
50 µA
0
5.0
10
15
20
25
30
35
40
0.002 0.0050.010.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
I B , BASE CURRENT (mA)
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
TJ = 25°C
*APPLIES for I C / I B<h FE / 2
0.8
0
25°C to 125°C
–55°C to 25°C
θ VC for V CE(sat)
V BE(sat) @ I C /I B = 10
V BE(on)@ V CE= 1.0 V
–0.8
–1.6
–2.4
25°C to 125°C
–55°C to 25°C
θ
VB for V BE
V
CE(sat) @ I C /I B = 10
0.2 0.5 1.0
0.1
2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
M10–4/6
LESHAN RADIO COMPANY, LTD.
BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
1000
VCC= –3.0 V
IC /I B= 10
IB1=IB2
V CC= 3.0 V
IC /I B= 10
700
500
t s
T
J
= 25°C
300
200
J
T = 25°C
100
70
100
50
70
50
30
20
t f
t f
30
20
td @ V BE(off)= 0.5 V
10
7.0
5.0
10
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
Figure 11. Turn–Off Time
10.0
500
300
200
J
T = 25°C
T J = 25°C
7.0
5.0
V CE=20 V
C ib
5.0 V
3.0
2.0
100
70
C ob
1.0
50
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.5
0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 13. Capacitance
Figure 12. Current–Gain — Bandwidth Product
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
FIGURE 19A
DUTY CYCLE, D = t 1 / t 2
0.05
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P(pk)
0.02
0.01
0.03
0.02
READ TIME AT t 1 (SEE AN–569)
t 1
Z
θJA(t) = r(t) • RθJA
SINGLE PULSE
t 2
T J(pk) – TA = P (pk) Z θJA(t)
0.01
0.01
0.02
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500 1.0k 2.0k
5.0k 10k 20k
50k
100k
t, TIME (ms)
Figure 14. Thermal Response
M10–5/6
LESHAN RADIO COMPANY, LTD.
BCW61BLT1 BCW61CLT1 BCW61DLT1
104
103
102
101
100
10–1
10–2
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 15. Using the model and the device
thermal response the normalized effective transient thermal re-
sistance of Figure 14 was calculated for various duty cycles.
To find Z θJA(t) , multiply the value obtained from Figure 14 by
V CC = 30 V
I CEO
I
CBO
the steady state value R θJA
Example:
.
AND
I CEX @ VBE(off) = 3.0 V
The MPS3905 is dissipating 2.0 watts peak under the follow-
ing conditions:
t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
–4
–2
0
+20
+40
+60
+80 +100 +120 +140 +160
The peak rise in junction temperature is therefore
∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
T J , JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
M10–6/6
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