BC646BDW1T1 [LRC]
Dual General Purpose Transistors(NPN Duals); 双路通用晶体管（ NPN对偶）
| 型号： | BC646BDW1T1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Dual General Purpose Transistors(NPN Duals) |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
6
Q2
1
5
4
6
5
4
See Table
Q1
1
2
3
3
2
SOT 363 /SC 88
CASE 419B STYLE1
MAXIMUM RATINGS
Rating
Symbol BC846
BC847 BC848
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
I C
65
80
45
50
30
30
V
6.0
100
6.0
100
5.0
100
V
Collector Current
-Continuous
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Per Device
P D
380
250
mW
mW
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
3.0
328
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
R θJA
T J , T stg
–55 to +150
ORDERING INFORMATION
Device
Package
Shipping
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
BC846b–1/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
Symbol
Min
Typ
Max
Unit
V (BR)CEO
V
(I C = 10 mA)
BC846 Series
65
45
30
—
—
—
—
—
—
BC847 Series
BC848 Series
Collector–Emitter Breakdown Voltage
(I C = 10 µA, V EB = 0) BC846 Series
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
V
V
V
80
50
30
—
—
—
—
—
—
BC847 Series
BC848 Series
Collector–Base Breakdown Voltage
(I C = 10 µA) BC846 Series
80
50
30
—
—
—
—
—
—
BC847 Series
BC848 Series
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
BC846 Series
6.0
6.0
5.0
—
—
—
—
—
—
—
—
BC847 Series
BC848 Series
—
Collector Cutoff Current
(V CB = 30 V)
15
5.0
nA
(V CB = 30 V, T A = 150°C)
—
µA
ON CHARACTERISTICS
DC Current Gain
h FE
—
(I C = 10 µA, V CE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
150
270
—
—
(I C = 2.0 mA, V CE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
200
420
—
290
520
—
450
800
0.25
0.6
—
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat)
Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA)
V
V
—
—
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
V BE(sat)
—
0.7
0.9
660
—
—
—
V BE(on)
580
—
700
770
mV
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
MHz
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Noise Figure (I C = 0.2 mA,
C obo
NF
4.5
pF
dB
V CE = 5.0 V dc, R S = 2.0 kΩ, BC846B, BC847B, BC848B
—
—
—
—
10
f = 1.0 kHz, BW = 200 Hz)
BC847C, BC848C
4.0
BC846b–2/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.2 0.3 0.50.7 1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
2.0
1.6
1.2
0.8
0.4
0
0.2
1.0
10
100
0.02
0.1
1.0
10
20
I C , COLLECTOR CURRENT (mA)
I B , BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
Figure 3. Collector Saturation Region
BC846b–3/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
10
400
300
7.0
200
5.0
100
80
3.0
2.0
60
40
30
1.0
20
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
0.4 0.6 0.81.0
2.0
4.0 6.0 8.0 10
20
40
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
Figure 5. Capacitances
1.0
0.8
0.6
0.4
0.2
0
2.0
1.0
0.5
0.2
0.1 0.2
1.0
10
100
0.2
0.5 1.0
2.0
5.0
10
20
50
100 200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
2.0
1.6
1.2
0.8
0.4
0
0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
0.2
0.5 1.0
2.0
5.0
10
20
50
100 200
I
C , COLLECTOR CURRENT (mA)
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
BC846b–4/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
Z
θJA (t) = r(t) R θJA
P (pk)
R
θJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
0.01
t 1
0.01
t 2
DUTY CYCLE, D = t 1 /t 2
T J(pk) – T C = P (pk)
R θJC (t)
SINGLE PULSE
0.001
0
1.0
10
100
1.0K
10K
100K
1.0M
t, TIME (ms)
Figure 11. Thermal Response
-200
The safe operating area curves indicate I C –V CE limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
-100
-50
The data of Figure 12 is based upon T J(pk) = 150°C; T C or
T A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T J(pk)
< 150°C. T J
-10
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
-5.0
-2.0
-1.0
-5.0
-10
-30
-45 -65
-100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
BC846b–5/5
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