BAV99LT1 [LRC]

Dual Series Switching Diode; 双系列开关二极管
BAV99LT1
型号: BAV99LT1
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Dual Series Switching Diode
双系列开关二极管

二极管 开关 光电二极管
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中文:  中文翻译
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LESHAN RADIO COMPANY, LTD.  
Dual Series Switching Diode  
BAV99LT1  
2
1
3
CATHODE  
ANODE  
3
1
CAHODE/ANODE  
2
DEVICE MARKING  
CASE 318–08, STYLE 11  
SOT–23 (TO–236AB)  
BAV99LT1 = A7  
MAXIMUM RATINGS (EACH DIODE)  
Rating  
Symbol  
Value  
70  
Unit  
Vdc  
Reverse Voltage  
V R  
I F  
Forward Current  
215  
500  
70  
mAdc  
mAdc  
V
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I FM(surge)  
V RRM  
Average Rectified Forward Current (1)  
(averaged over any 20 ms period)  
Repetitive Peak Forward Current  
Non–Repetitive Peak Forward Current  
t = 1.0 µ s  
I F(AV)  
715  
450  
mA  
I FRM  
I FSM  
mA  
A
2.0  
1.0  
0.5  
t = 1.0 ms  
t = 1.0 S  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P D  
225  
mW  
FR–5 Board, (1) T A = 25°C  
Derate above 25°C  
1.8  
mW/°C  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
556  
300  
°C/W  
mW  
Alumina Substrate, (2) T A = 25°C  
Derate above 25°C  
2.4  
mW/°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
°C/W  
°C  
T J , T stg  
–65 to +150  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage(I(BR) = 100 µA)  
Reverse Voltage Leakage Current (V R = 70 Vdc)  
(V R = 25 Vdc, T J = 150°C)  
(V R = 70 Vdc, T J = 150°C)  
Diode Capacitance  
V (BR)  
I R  
70  
––  
––  
2.5  
30  
50  
Vdc  
µAdc  
C D  
V F  
1.5  
pF  
(V R = 0, f = 1.0 MHz)  
Forward Voltage (I F = 1.0 mAdc)  
(I F = 10 mAdc)  
––  
––  
––  
715  
855  
mVdc  
(I F = 50 mAdc)  
1000  
1250  
(I F = 150 mAdc)  
Reverse Recovery Time  
t rr  
6.0  
ns  
V
(I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100) (Figure 1)  
Forward Recovery Voltage  
(I F = 10 mA, t r = 20 ns)  
V FR  
1.75  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
G7–1/2  
LESHAN RADIO COMPANY, LTD.  
BAV99LT1  
2.0 k  
100 µH  
0.1 µF  
820 Ω  
+10 V  
I F  
t r  
t p  
t
0.1µF  
I F  
t rr  
t
10%  
90%  
D.U.T.  
i R(REC) = 1.0 mA  
50 INPUT  
SAMPLING  
OSCILLOSCOPE  
50 OUTPUT  
PULSE  
GENERATOR  
I R  
OUTPUT PULSE  
(I F = I R = 10 mA; MEASURED  
at i R(REC) = 1.0 mA)  
INPUT SIGNAL  
V R  
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I F ) of 10mA.  
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.  
Notes: 3. t p » t rr  
Figure 1. Recovery Time Equivalent Test Circuit  
CURVES APPLICABLE TO EACH DIODE  
100  
10  
10  
T A = 150°C  
T A = 85°C  
T A = 125°C  
1.0  
0.1  
T
A = – 40°C  
T A = 85°C  
T A = 55°C  
1.0  
0.1  
T A = 25°C  
0.01  
0.001  
T A = 25°C  
20  
0
10  
30  
40  
50  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V R , REVERSE VOLTAGE (VOLTS)  
V F , FORWARD VOLTAGE (VOLTS)  
Figure 3. Leakage Current  
Figure 2. Forward Voltage  
0.68  
0.64  
0.60  
0.56  
0.52  
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)  
Figure 4. Capacitance  
G7–2/2  

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