BAV70LT1 [LRC]
Monolithic Dual Switching Diode Common Cathode; 单片双开关二极管共阴极
| 型号： | BAV70LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Monolithic Dual Switching Diode Common Cathode |
| 文件： | 总1页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Cathode
BAV70LT1
3
1
ANODE
1
3
CATHODE
2
2
ANODE
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Symbol
V R
Value
70
Unit
Vdc
I F
200
mAdc
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
I FM(surge)
500
mAdc
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
P D
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
T J , T stg
–55 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
Symbol
Min
Max
Unit
V (BR)
I R
70
—
Vdc
Reverse Voltage Leakage Current
(V R = 25 Vdc, T J = 150°C)
(V R = 70 Vdc)
µAdc
—
—
—
60
2.5
100
(V R = 70 Vdc, T J = 150°C)
Diode Capacitance
C D
V F
—
1.5
pF
(V R = 0, f = 1.0 MHz)
Forward Voltage
mVdc
(I F = 1.0 mAdc)
—
—
—
—
715
855
(I F = 10 mAdc)
(I F = 50 mAdc)
1000
1250
(I F = 150 mAdc)
Reverse Recovery Time
R L = 100 Ω
t rr
—
6.0
ns
(I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC) = 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G5–1/1
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