BA159G [LRC]
FAST GPP DIODES; FAST GPP二极管
| 型号： | BA159G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | FAST GPP DIODES |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
BA157G – BA159G
FAST GPP DIODES
Maximum Average
Maximum
Maximum
Maximum
Forward
Package
Maximum
Peak Reverse
Voltage
Rectified Current
@ Half-Wave
Forward Peak
Surge Current @
Reverse
Current @ PRV
@ TA=25ºC
Maximum
Reverse
TYPE
Dimensions
Voltage
Resistive Load 60Hz 8.3ms Superimposed
@ TA=25ºC
Recovery Time
PRV
V PK
I O @ T L
AAV ºC
I FM (Surge)
A PK
I
I FM
V FM
V PK
Trr
ns
R
µAdc
A PK
150
250
500
500
BA157G
BA158G
400
600
1.0
55
20
5.0
1.0
1.3
DO – 41
BA159DG 800
BA159G 1000
Trr
I F = 0.5A, I R = 1.0A, I RR = 0.25A
Trr Test Conditions: I F = 0.5A, I R = 1.0A, I RR = 0.25A
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7)
.080(2.0)
DIA
DO – 41
35A–1/2
LESHAN RADIO COMPANY, LTD.
BA157G-BA159G
GPP
RATING & CHARACTERISTIC CURVES OF FAST GPP DIODE
FIG.1 – TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
50 Ω
10 Ω
NONINDUCTIVE
NONINDUCTIVE
Trr
+0.5A
(-)
D.U.T.
(+)
25Vdc
(APPROX)
(-)
PULSE
G E N E R AT O R
( N O T E 2 )
0
1Ω
OSCILLOSCOPE
(NOTE 1)
-0.25A
N O N .
INDUCTIVE
(+)
NOTES:1.Rise Time=7ns max.
-1.0A
Input Impedance=1megohm.22pF.
1cm
2.Rise Time=10ns max.
Source Impedance=50 ohms.
SET TIME
BASE FOR 10 ns/cm
FIG. 2 – TYPICAL FORWARD
CURRENT DERATING CURVE
FIG.3 – TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
1.0
0.8
0.6
0.4
0.2
0
TJ =25ºC
Pulse Width=300µs
1% Duty Cycle
1
IPK/IAV =π
Resistive or
Inductive Load
0.375”(9.5mm)
Lead lengths
.1
.01
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
AMBIENT TEMPER ATURE, (ºC)
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5 – MAXIMUM NON-REPETITIVE PEAK
FIG.4 – TYPICAL JUNCTION CAPACITANCE
FORWARD SURGE CURRENT
20
100
15
10
5
10
TJ = 25 ºC
f =1MHz
sing
p-p
V
=50MV
TJ =55ºC
8.3ms Single Halt Sine
Wave (JEDEC Method)
1
0
1
5
10
50
100
1
2
4
6
10
20
40
60
100
REVERSE VOLTAGE,(V)
NUMBER OF CYCLES AT 60Hz
35A–2/2
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