3QL150AO [LRC]
Package with screw terminals Glass passivated chips; 带有螺钉端子玻璃钝化芯片封装
| 型号： | 3QL150AO |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Package with screw terminals Glass passivated chips |
| 文件： | 总4页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3QL150AK Thru 3QL150AS
1. 外型尺寸Feature & Dimension
Features
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Package with screw terminals
Isolation voltage 3000 V~
Glass passivated chips
Blocking voltage up to 1600 V
Low forward voltage drop
UL registered E231047
Applications
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Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
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Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
2. 产品性能Product Characteristic
ELECTRICAL AND THERMAL CHARACTERISTICS
TC=25°C unless otherwise specified
Item
Symbol
VRM
3QL150AK 3QL150AO 3QL150AQ 3QL150AS
Unit
V
Maximum repetitive voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
800
560
800
1200
840
1400
980
1600
1120
1600
VRMS
VDC
V
1200
1400
V
≤10
≤20
uA
mA
Peak Reverse Current (per leg) @Tj = 25°C
At Rated DC Blocking Voltage @Tj = 150°C
IR
Io
Average recified forward current 60Hz sine
150
A
wave,R-load with heatsink Tc=100℃
TJ=45℃VR=0
t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
1500
1700
1350
1500
IFSM
A
TJ=150℃ VR=0 t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
TJ=45℃VR=0
t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
11250
14450
9100
I2t
A2s
TJ=150℃ VR=0 t=10ms (50Hz),sine
t=8.3ms(60Hz),sine
11250
2
3QL150AK Thru 3QL150AS
Storage temperature
Tstg
-40 to +150
℃
50/60Hz RMS t=1 min
IISOL≤1mA t=1 s
2500
3000
VISOL
V~
Mounting torque(M5)
Md
N·m
（Recommended Value 1.5~2.5）5±15%
Terminal connection torque(M5)
typical
Weight
VF
270
1.3
0.8
g
V
V
IF=200A TJ=25℃
For power-loss calculations only
VT0
per diode DC current
Per module
0.6
0.1
k/w
k/w
k/w
k/w
RthJC
per diode DC current(typ.)
per module(typ.)
0.18
0.03
RthCS
Creeping distance on surface
Creeping distance in air
dS
dA
a
10
9.4
50
mm
mm
m/s2
Max. allowable acceleration
3
3QL150AK Thru 3QL150AS
3. 特性曲线Characteristic Curve
Fig.1.Power dissipaꢀon vs. out put cur rent F
Fig.3.Surge overload characterisꢀcs vs. ꢀme
Fig.5.Transient thermal impedance vs. ꢀme
i g. 2. Powe r di ssi paꢀon vs. Power Dis si paꢀon
Fig.4.Forward characterisꢀcs of a di ode arm
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3QL150AK Thru 3QL150AS
4. 印字规范Marking Identification
Note：
型号： 3 QL
150 AS
Bridge reverse voltage=1600V
Average rectified forward Current=150A
mean：QL series bridge
mean：Three phase bridge
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相关型号：
3QL5-400KV2.5A
High voltage bridge rectifier 3QL5~400KV/2.5A adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
HVDIODE
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