1N5819 [LRC]
SCHOTTKY BARRIER DIODES; 肖特基势垒二极管型号: | 1N5819 |
厂家: | LESHAN RADIO COMPANY |
描述: | SCHOTTKY BARRIER DIODES |
文件: | 总2页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
1N5817–1N5819
SCHOTTKY BARRIER DIODES
Maximum
Maximum Average
Rectified Current
@ Half-Wave
Resistive Load
60Hz
Maximum
Maximum
Reverse
Current
@ PRV
@ TA=25ºC
Package
Maximum
Peak
Forward
Voltage
Forward Peak
Surge Current
@ 8.3ms
TYPE
Dimensions
Reverse
Voltage
@ TA=25ºC
Superimposed
I R
PRV
VPK
IO @ TL
I
FM(Surge)
APK
I FM
V
V
FM
PK
mAdc
AAV
ºC
A PK
1N5817
1N5818
1N5819
20
30
40
90
90
90
25
25
25
1.0
1.0
1.0
0.45
0.55
0.60
1.0
1.0
DO – 41
1.0(25.4)
MIN
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA
.107(2.7)
DIA
.080(2.0)
DO – 41
3A–1/2
LESHAN RADIO COMPANY, LTD.
1N5817-1N5819
SCHOTTKY DIODE RATING & CHARACTERISTIC CURVES
FIG.2 - MAXIMUM NON-REPETITIVE FOWARD
SURGE CURRENT
FIG.1-FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5
1.00
.75
TJ=TJMAX.
8.3ms Single Half Sine-Wave
(JEDEC Method)
.50
.25
Resistive or inductive load
0.375’’(9.5mm)leadlength
0
0
20
40
60
80
100
120
140
LEAD TEMPERATURE, ( ºC )
1
2
4
6
8
10
20
40
60 80100
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICALREVERSECHARACTERISTICS
50
10
10
TJ = 125 ºC
TJ =125 ºC
1.0
1
TJ = 75 ºC
.1
TJ=25 ºC
.1
TJ = 25 ºC
Pulse Width=300µs
.01
1% Duty Cycle
.01
.001
0
.2
.4
.6
.8
1
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
400
TJ = 25 ºC
f = 1.0MHz
Vsing = 50mVp-p
10
100
1
.1
10
.01
.1
1
10
100
.1
1
10
100
t , PULSE DURATION , sec.
REVERSE VOLTAGE, (V)
3A–2/2
相关型号:
1N5819-13
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
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1N5819-B
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PALSTIC PACKAGE-2
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1N5819-BP
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MCC
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