1N4947 [LRC]
FAST GPP DIODES; FAST GPP二极管
| 型号： | 1N4947 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | FAST GPP DIODES |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
1N4942 – 1N4948
FAST GPP DIODES
Maximum Average
Maximum
Maximum
Maximum
Forward
Package
Maximum
Peak Reverse
Voltage
Rectified Current
@ Half-Wave
Forward Peak
Surge Current @
Reverse
Current @ PRV
@ TA=25ºC
Maximum
Reverse
TYPE
Dimensions
Voltage
Resistive Load 60Hz 8.3ms Superimposed
@ TA=25ºC
Recovery Time
PRV
V PK
I O @ T L
AAV ºC
I FM (Surge)
A PK
I
I FM
V FM
V PK
Trr
ns
R
µAdc
A PK
150
150
250
250
500
1N4942
1N4944
1N4946
1N4947
1N4948
200
400
600
800
1000
1.0
75
25
5.0
1.0
1.3
DO – 41
Trr
I F = 0.5A, I R = 1.0A, I RR = 0.25A
Trr Test Conditions: I F = 0.5A, I R = 1.0A, I RR = 0.25A
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7)
.080(2.0)
DIA
DO – 41
37A–1/2
LESHAN RADIO COMPANY, LTD.
1N4942-1N4948
GPP
RATING & CHARACTERISTIC CURVES OF FAST GPP DIODE
FIG.1–TEST CIRCUIT DIAGRAM AND
FIG. 2 – TYPICAL FORWARD
CURRENT DERATING CURVE
REVERSE RECOVERY TIME CHARACTERISTIC
1.25
50 Ω
10 Ω
Single Phase
Trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
Half Wave 60Hz
Resistive or
Inductive Load
1.00
0.75
0.50
0.25
0
(-)
D.U.T.
(+)
25Vdc
(APPROX)
(-)
PULSE
G E N E R ATO R
( N O T E 2 )
0
-0.25A
1Ω
OSCILLOSCOPE
(NOTE 1)
N O N .
INDUCTIVE
(+)
NOTES:1.Rise Time=7ns max.
-1.0A
25
50
75
100
125
150 175
1cm
Input Impedance=1megohm.22pF.
SET TIME
BASE FOR 50/100ns/cm
2.Rise Time=10ns max.
AMBIENT TEMPER ATURE, (ºC)
Source Impedance=50 ohms.
FIG. 4 – TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 3 – TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
0
20
10
TJ =150ºC
TJ =50ºC
TJ =25ºC
TJ =25ºC
1.0
.1
Pulse Width=300µs
1% Duty Cycle
.01
.4
.6
.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG. 5 – MAXINUM NON-REPETITIVE
FOWARD SURGE CURRENT
FIG. 6 – TYPICAL JUNCTION CAPACITANCE
200
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
60
40
40
30
20
10
0
20
10
TJ =25ºC
6
4
2
1
.1
.2
.4
1.0
2
4
10 20
40
100
1
5
10
50
100
REVERSE VOLTAGE,(V)
NUMBER OF CYCLES AT 60Hz
37A–2/2
相关型号：
1N4947-G
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
SENSITRON
1N4947-T3
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
SENSITRON
1N4947E3
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS, A, 2 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明