S16RIA [LIUJING]
可控硅、晶闸管;
浙江柳晶整流器有限公司 
S16RIA
Medium Power Thyristors
STUD VERSION
Liujing rectifier co., Ltd.
FEATURES
TYPICAL APPLICATIONS
1). Improved glass passivation for high reliability
and exceptional stability at high temperature
2). High di/dt and dv/dt capabilities
3). Standard package
1). Medium power switching
2). Phase control applications
3). Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
4). Low thermal resistance
5). Metric threads version available
6). Types up to 1600V VDRM/ VRRM
MAJOR RATINGS AND CHARACTERISTICS
S16RIA
Parameters
Unit
10 to 120
16
140 to 160
16
A
℃
A
IF(AV)
IF(RMS)
IFSM
@ TC
85
85
35
35
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
340
360
574
524
225
A
235
A
255
A2s
A2s
V
I2t
235
V
DRM/VRRM
100 to 1200 1400 to 1600
μ
s
Tq
TJ
typical
110
℃
- 65 to 125
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
V
DRM/VRRM, maximum
repetitive peak
reverse voltage *(1)
V
VRSM, maximum non-
I
DRM/IRRM max.
repetitive peak
reverse voltage
Type number
Voltage Code
@ TJ = TJ max
*(2)
V
mA
20
10
20
100
200
150
300
40
400
500
60
600
700
80
800
900
S16RIA
10
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
μ
*(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/
s
*(2) For voltage pulses with tp ≤ 5ms
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1 / 7
S16RIA
2). Forward Conduction
S16RIA
Parameters
Unit
Conditions
10 to 120 140 to 160
Max. average forward current
@ Case temperature
16
85
16
85
A
℃
A
°
180 conduction, half sine wave
IT(AV)
IT(RMS) Max. RMS forward current
35
35
340
360
285
300
574
524
405
375
5740
0.97
1.24
17.9
13.6
1.75
-
225
235
190
200
255
235
180
165
2550
1.14
1.31
14.83
12.03
-
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
Max. peak, one-cycle forward,
ITSM
A
non-repetitive surge current
Sinusoidal half
wave, Initial
TJ = TJ max.
I2t
Maximum I2t for fusing
A2s
2
I
2
2
√
√
√
t
Maximum I t for fusing
A
s
t = 0.1 to 10ms, no voltage reapplied
π π
(16.7%x x IF(AV)<I< x IF(AV)), TJ=TJ max.
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
V
π
(I > x IF(AV)), TJ = TJ max.
π π
(16.7% x x IF(AV)<I< xIF(AV)), TJ=TJ max.
rt1
rt2
Low level value of forward slope resistance
High level value of forward slope resistance
Ω
m
π
(I >
x IF(AV)), TJ = TJ max.
℃
Ipk= 50A, TJ = 25 tp = 10ms sine pulse
VTM Max. forward voltage drop
V
1.80
°
TJ = 25 C, anode supply 12V
IH
IL
Maximum holding current
Typical latching current
Max. rate of rise of turned-on current
VDRM ≤ 600V
130
200
mA
resistive load
200
180
160
150
0.9
4
TJ = TJ max., VDM = rated VDRM
μ
Ω μ
Gate pulse = 20V, 15 , tp = 6 s,
di/dt VDRM ≤ 800V
VDRM ≤ 1000V
A/
s
μ
tr = 0.1 s max. ITM = (2x rated di/dt) A
VDRM ≤ 1600V
℃ ℃
TJ=25 , at = rated VDRM/VRRM, TJ=125
tgt
trr
Typical turn-on time
μ
μ
s
Typical reverse recovery time
TJ=TJ max., ITM=IT(AV), tp>200 s, di/dt = -10A/
μ
μ
TJ = TJ max., ITM = IT(AV), tp > 200 s,
s
μ
μ
s
tq
Typical turn-off time
110
100
VR = 100V, di/dt = -10A/ s, dv/dt = 20V/
linear to 67% VDRM, gate bias 0V-100W
Max. critical rate of rise of
off-state voltage
TJ = TJ max. linear to 100% rated VDRM
TJ = TJ max. linear to 67% rated VDRM
μ
s
dv/dt
V/
300 (*)
μ
μ
(*) tq = 10 sup to 600V, tq = 30 s up to 1600V available on special request.
μ
(**) Available with: dv/dt = 1000V/ s, to complete code add S90 i.e. S16RIA120S90.
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2 / 7
S16RIA
3). Triggering
Parameters
S16RIA
8.0
2.0
1.5
10
Unit
W
Conditions
PGM Maximum peak gate power
TJ = TJ max.
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
-VGM Maximum peak negative gate voltage
A
V
TJ = TJ max.
TJ = TJ max.
℃
90
TJ = - 65
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
℃
IGT
DC gate current required to trigger
60
mA
TJ = 25
℃
35
TJ = 125
TJ = - 65
℃
3.0
2.0
1.0
2.0
℃
VGT DC gate voltage required to trigger
V
V
TJ = 25
℃
TJ = 125
IGD
DC gate current not to trigger
mA
TJ = TJ max., VDRM = rated value
Max. gate current/ voltage
TJ = TJ max.
not to trigger is the max.
value which. will not trigger
any unit with rated VDRM
anode-to-cathode applied
VGD DC gate voltage not to trigger
0.2
V
VDRM = rated value
℃
℃
TJ
Max. operating temperature range
Max. storage temperature range
- 65 to 125
- 65 to 125
0.86
T
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
K/W DC operation
0.35
K/W Mounting surface, smooth, flat and greased
to nut
to device
25
20(27.5)
0.23(0.32)
2.3(3.1)
lbf-in Lubricated threads
kgf.m (Non-lubricated threads)
Nm
T
Mounting torque
0.29
2.8
wt
Approximate weight
Case style
14 (0.49)
TO-48
g (oz) See Outline Table
Δ
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction
Rectangular conduction
Units
Conditions
°
°
180
0.21
0.25
0.31
0.45
0.76
0.15
0.25
0.34
0.47
0.76
120
°
90
60
30
K/W
TJ = TJ max.
°
°
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3 / 7
S16RIA
PERFORMANCE CURVES FIGURE
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