KP500A400-1000V Y35KPC [LIUJING]
可控硅、晶闸管;型号: | KP500A400-1000V Y35KPC |
厂家: | 浙江柳晶整流器有限公司 |
描述: | 可控硅、晶闸管 可控硅 |
文件: | 总3页 (文件大小:471K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KP500A400~1000V
Y35KPC
国标型 普通晶闸管 平板式
-
(
)
Chinese Type Phase Control Thyristors (Capsule Version)
Liujing rectifier co., Ltd.
FEATURES
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
TYPICAL APPLICATIONS
IT(AV)
1076A
1). AC controllers
VDRM/VRRM 400~1000V
2). DC and AC motor control
3). Controlled rectifiers
ITSM
I2t
11 KA
605 103A2S
THE MAIN PARAMETERS
VALUE
℃
SYMBOL
IT(AV)
CHARACTERISTIC
TEST CONDITIONS
Tj(
)
UNIT
A
Min Type Max
O
℃
Ths=55
1076
500
180 half sine wave 50Hz
Double side cooled,
Mean on-state current
125
℃
Ths=102
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM&VRRM,tp=10ms
DSM&VRSM= VDRM&VRRM+100V
125 3100
125
1000
V
V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VD= VDRM
VR= VRRM
40
mA
KA
ITSM
I2t
Surge on-state current
I2T for fusing coordination
Threshold voltage
11.0
605 A2s*103
10ms half sine wave
VR=0.6VRRM
125
VTO
rT
0.80
0.40
1.80
1000
V
125
Ω
m
On-state slop resistance
Peak on-state voltage
ITM=1500A, F=15KN
VDM=0.67VDRM
VTM
dv/dt
125
125
V
μ
Critical rate of rise of off-state voltage
V/
s
s
VDM= 67%VDRM to1300A,
μ
125
500
A/
di/dt
Critical rate of rise of on-state current
μ
Gate pulse tr ≤0.5 s IGM=1.5A
Irm
trr
Reverse recovery current
Reverse recovery time
Recovery charge
137
15
A
μ
ITM=700A,tp=1000 s,
μ
di/dt=-20A/ s,
μ
125
s
VR=50V
μ
Qrr
IGT
VGT
IH
1027
250
2.5
C
Gate trigger current
Gate trigger voltage
Holding current
35
mA
V
VA=12V, IA=1A
VDM=0.67VDRM
25
0.8
20
200
mA
V
VGD
Non-trigger gate voltage
125
0.3
°
At 180 sine, double side cooled
Clamping force 15KN
Thermal resistance
Junction to heatsink
℃
0.035
/W
Rth(j-h)
Fm
Mounting force
Stored temperature
Weight
10
20
KN
℃
g
T
stg
-40
140
Wt
260
Size
Package box size
×
×
95 95 50
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KP500A400~1000V
PERFORMANCE CURVES FIGURE
Peak On-state Voltage Vs.Peak On-state Current
Max. junction To heatsink Thermai Impedance Vs.Time
ꢀꢁꢀꢆ
ꢀꢁꢀꢂ
ꢀꢁꢀꢅ
ꢀꢁꢀꢄ
ꢀ
ꢆ
ꢂꢁꢃ
TJ=125eC
ꢂ
ꢅꢁꢃ
ꢅ
ꢄꢁꢃ
ꢄ
ꢀꢁꢃ
ꢀꢁꢀꢀꢄ
ꢀꢁꢀꢄ
ꢀꢁꢄ
Time,seconds
ꢄ
ꢄꢀ
ꢄꢀꢀ
ꢄꢀꢀꢀ
Instantaneous on-state currant,amperes
ꢄꢀꢀꢀꢀ
Fig.1
Fig.2
Max. Power Dissipation Vs.Mean On-state Current
Max. heatsink Temperature Vs.Mean On-state Current
ꢄꢆꢀ
ꢄꢅꢀ
ꢄꢀꢀ
ꢉꢀ
ꢅꢆꢀꢀ
ꢄꢅꢀ
ꢋꢀ
ꢄꢉꢀ
ꢅꢄꢀꢀ
ꢄꢉꢀꢀ
ꢄꢃꢀꢀ
ꢄꢅꢀꢀ
ꢋꢀꢀ
ꢈꢀꢀ
ꢂꢀꢀ
ꢀ
ꢈꢀ
ꢀ
ꢄꢉꢀ
ꢀ
ꢄꢉꢀ
Conduction Angle
Conduction Angle
ꢂꢀ
ꢈꢀ
ꢆꢀ
ꢂꢀ
ꢈꢀ
ꢋꢀ
ꢄꢅꢀ
ꢄꢉꢀ
ꢅꢀ
ꢀ
ꢀ
ꢅꢀꢀ
ꢆꢀꢀ
ꢈꢀꢀ
ꢉꢀꢀ
ꢄꢀꢀꢀ
ꢄꢅꢀꢀ
ꢀ
ꢅꢀꢀ
ꢆꢀꢀ
ꢈꢀꢀ
ꢉꢀꢀ ꢄꢀꢀꢀ ꢄꢅꢀꢀ ꢄꢆꢀꢀ
Mean on-state current,amperes
Mean on-state current,amperes
Fig.3
Fig.4
Max. heatsink Temperature Vs.Mean On-state Current
Max. Power Dissipation Vs.Mean On-state Current
ꢄꢆꢀ
ꢄꢅꢀ
ꢄꢀꢀ
ꢉꢀ
ꢄꢅꢀꢀ
ꢄꢀꢀꢀ
ꢉꢀꢀ
ꢈꢀꢀ
ꢆꢀꢀ
ꢅꢀꢀ
ꢀ
'&
360
360
ꢅꢊꢀ
ꢄꢉꢀ
ꢄꢅꢀ
Conduction Angle
Conduction Angle
ꢋꢀ
ꢈꢀ
ꢈꢀ
ꢂꢀ
ꢆꢀ
ꢅꢀ
ꢂꢀ
ꢈꢀ ꢋꢀ ꢄꢅꢀ ꢄꢉꢀ ꢅꢊꢀ '&
ꢀ
ꢀ
ꢆꢀꢀ
ꢉꢀꢀ
ꢄꢅꢀꢀ
ꢄꢈꢀꢀ
ꢅꢀꢀꢀ
ꢀ
ꢅꢀꢀ
ꢆꢀꢀ
ꢈꢀꢀ
ꢉꢀꢀ
ꢄꢀꢀꢀ
Mean on-state current,amperes
Fig.6
Mean on-state current,amperes
Fig.5
2
I t Vs.Time
Surge Current Vs.Cycles
700
600
500
400
300
200
100
ꢄꢅ
ꢄꢀ
ꢉ
ꢈ
ꢆ
ꢅ
ꢄ
ꢄꢀ
ꢄꢀꢀ
1
10
Cycles at 50Hz
Time,m.seconds
Fig.8
Fig.7
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KP500A400~1000V
Gate characteristic at 25eC junction temperature
Gate Trigger Zone at varies temperature
ꢂ
ꢊꢆꢈ
ꢊ
ꢅꢄ
ꢅꢃ
ꢅꢂ
ꢅꢁ
ꢅꢀ
ꢄ
-30eC
-10eC
PGM=100W
(100嘕s spulse
25
eC
ꢇ
PD[ꢆ
ꢁꢆꢈ
ꢁ
125eC
PLQꢆ
ꢅꢆꢈ
ꢅ
ꢃ
3*ꢁ:
ꢂ
ꢀꢆꢈ
ꢀ
ꢁ
ꢀ
ꢀ
ꢂ
ꢄ
ꢅꢁ
ꢅꢃ
ꢁꢀ
ꢀ
ꢅꢀꢀ
ꢁꢀꢀ
ꢊꢀꢀ
ꢂꢀꢀ
ꢈꢀꢀ
ꢃꢀꢀ
Gate current,IGT,A
ˈ
Gate current,IGT mA
Fig.10
Fig.9
OUTLINE
E-mail: rectifier@163.com
thyristors@yahoo.cn
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
打造最具竞争力的电力半导体产品
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
To be the most competitive Power Semiconductor
Devices manufactory.
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: thristors@hotmail.com
LIUJING reserves the right to change limits, test conditions and dimensions.
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