SP3374NUTG [LITTELFUSE]

Trans Voltage Suppressor Diode, 1000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, MO-229, DFN-10, 10 PIN;


型号：	SP3374NUTG
厂家：	LITTELFUSE
描述：	Trans Voltage Suppressor Diode, 1000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, MO-229, DFN-10, 10 PIN 局域网光电二极管
文件：	总5页 (文件大小：914K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Lowꢀoperatingꢀandꢀ

(5/50ns)

•ꢀ

Providesꢀprotectionꢀforꢀ

two differential data pairs

(4 channels) up to 40A

TVS Diode Arrays (SPA^®Diodes)

Lightning Surge Protection - SP3374NUTG

RoHS

GREEN

SP3374NUTG 3.3V 40A Diode Array

Description

The SP3374NUTG is a low-capacitance, TVS Diode Array

designed to provide protection against ESD (electrostatic

discharge), CDE (cable discharge events), EFT (electrical

fast transients), and lightning induced surges for high-

speed, differential data lines. It’s packaged in a µDFN

package (3.0 x 2.0mm) and each device can protect up 4

channels or 2 differential pairs, up to 40A (IEC 61000-4-

5 2^ndedition,) and up to 30kV ESD (IEC 61000-4-2). The

“ﬂow-through” design minimizes signal distortion, reduces

voltage overshoot, and provides a simpliﬁed PCB design.

The SP3374NUTG with its low capacitance and low

clamping voltage makes it ideal for high-speed data

interfaces such as 1GbE applications found in notebooks,

switches, etc.

Pinout

Features

•ꢀ ESD,ꢀIECꢀ61000-4-2,ꢀ

•ꢀ μDFN-10ꢀpackageꢀisꢀ

optimized for high-speed

data line routing

30kV contact, 30kV air

•ꢀ EFT,ꢀIECꢀ61000-4-4,ꢀ40Aꢀ

•ꢀ Lightning,ꢀIECꢀ61000-

4-5 2^ndedition, 40A

(t_P=8/20μs)

clamping voltage

•ꢀ Lowꢀcapacitanceꢀofꢀ

3.5pF@0V (TYP) per I/O

•ꢀꢀAEC-Q101ꢀqualiﬁed

•ꢀ Lowꢀleakageꢀcurrentꢀofꢀ

0.1μA (TYP) at 3.3V

•ꢀꢀHalogenꢀfree,ꢀLeadꢀfreeꢀ

andꢀRoHSꢀcompliant

Functional Block Diagram

Applications

•10/100/1000ꢀEthernet

•ꢀWAN/LANꢀEquipment

•ꢀLVDSꢀInterfaces

•ꢀIntegratedꢀMagnetics

•ꢀSmartꢀTV

LINE1 IN (Pin 1)

LINE2 IN (Pin 2)

LINE1 OUT (Pin 10)

LINE2 OUT (Pin 9)

•ꢀDesktops,ꢀServersꢀandꢀ

Notebooks

Application Example

GND

RJ-45 Connector

Ethernet PHY

TP0+

TP0-

LINE3 IN (Pin 4)

LINE4_IN (Pin 5)

LINE3 OUT (Pin 7)

LINE4_OUT (Pin 6)

TP1+

TP1-

TP2+

TP2-

TP3+

TP3-

LifeꢀSupportꢀNote:

Not Intended for Use in Life Support or Life Saving Applications

SP2574N

SP3374

The products shown herein are not designed for use in life sustaining or life saving

applications unless otherwise expressly indicated.

Speciﬁcations are subject to change without notice.

Revision: 06/07/16

TVS Diode Arrays (SPA^®Diodes)

Lightning Surge Protection - SP3374NUTG

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

I_PP

Peak Current (t_p=8/20μs)

Peak Pulse Power (t_p=8/20μs)

OperatingTemperature

StorageTemperature

P_Pk

1000

T_OP

-40 to 125

-55 to 150

°C

T_STOR

°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of

the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Characteristics (T_OP=25ºC)

Parameter

Reverse Standoff Voltage

ReverseꢀLeakageꢀCurrent

Snap Back Voltage

Symbol

V_RWM

I_R

Test Conditions

I_R≤ 1µA

Min

Typ

0.1

Max

3.3

Units

V_RWM= 3.3V, T = 25°C

I_SB= 50mA

0.5

µA

V_SB

2.8

I_PP= 1A, t = 8/20μs

Any I/O t^po Ground

5.5

10.5

18.0

I_PP= 10A, t_p= 8/20μs

Any I/O to Ground

Clamp Voltage

V_C

I_PP= 25A, t_p= 8/20μs

Any I/O to Ground

I_PP= 40A, t_p= 8/20μs

Line-to-Line¹, two I/O Pins

connected together on each line

25.0

Dynamic Resistance²

R_DYN

V_ESD

TLP,ꢀt_p=100ns, Any I/O to Ground

IEC 61000-4-2 (Contact)

IEC 61000-4-2 (Air)

0.15

Ω

ESDꢀWithstandꢀVoltage

Between I/O Pins and Ground

C_{I/O to GND}

C_{I/O to I/O}

3.5

1.7

5.0

V_Rꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz

Diode Capacitance

Between I/O Pins

V_Rꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz

Notes:

1. Rating with 2 pins connected together per sugguested diagram ( For example, pin1 is connected to pin 10,

pin 2 is connected to Pin 9, Pin 4 is connected to pin 7 and pin 5 is connected to pin 6)

2.ꢀTransmissionꢀLineꢀPulseꢀ(TLP)ꢀwithꢀ100nsꢀwidth,ꢀ2nsꢀriseꢀtime,ꢀandꢀaverageꢀwindowꢀt1=70nsꢀtoꢀt2=ꢀ90ns

Speciﬁcations are subject to change without notice.

Revision: 06/07/16

TVS Diode Arrays (SPA^®Diodes)

Lightning Surge Protection - SP3374NUTG

Capacitance vs. Reverse Bias

ClampingVoltage vs. I_PP(I/O to GND)

15.0

12.0

9.0

6.0

3.0

0.0

0.5

1.5

2.5

3.5

Peak Pulse Current-I_PP(A)

Bias Voltage (V)

ClampingVoltage vs. I_PP(Line-to-Line)

8/20μS PulseWaveform

110%

100%

90%

80%

70%

60%

50%

40%

30%

20%

10%

0.0

5.0

10.0

15.0

20.0

25.0

30.0

Time (μs)

Peak Pulse Current-I_PP(A)

Transmission Line Pulsing(TLP) Plot

TLP Voltage (V)

Speciﬁcations are subject to change without notice.

Revision: 06/07/16

TVS Diode Arrays (SPA^®Diodes)

Lightning Surge Protection - SP3374NUTG

Soldering Parameters

Reﬂow Condition

Pb – Free assembly

t_P

T_P

Critical Zone

TL to TP

-ꢀTemperatureꢀMinꢀ(T_s(min)

)

150°C

Ramp-up

T_L

T_S(max)

PreꢀHeat -ꢀTemperatureꢀMaxꢀ(T_s(max)

)

200°C

t_L

-Time (min to max) (t_s)

60 – 180 secs

Ramp-down

Preheat

Averageꢀrampꢀupꢀrateꢀ(Liquidus)ꢀꢀTempꢀ(T_L)

to peak

3°C/second max

T_S(min)

t_S

T_S(max)toT_L- Ramp-up Rate

3°C/second max

217°C

-Temperature (T_L)ꢀ(Liquidus)

Reﬂow

time to peak temperature

Time

-Temperature (t_L)

60 – 150 seconds

260^+0/-5°C

PeakTemperature (T_P)

Time within 5°C of actual peak

Temperature (t_p)

20 – 40 seconds

Product Characteristics

Lead Plating

Ramp-down Rate

6°C/second max

8ꢀminutesꢀMax.

260°C

Pre-Plated Frame

Copper Alloy

Time 25°C to peakTemperature (T_P)

Do not exceed

Lead Material

Lead Coplanarity

Substrate material

Body Material

Flammability

0.004 inches(0.102mm)

Silicon

Ordering Information

MoldedꢀEpoxy

ULꢀ94ꢀV-0

Part Number

SP3374NUTG

Package

Marking

bG4

Min.ꢀOrderꢀQty.

µDFN-10

(3.0x2.0mm)

3000

MSL Rating

Levelꢀ1

Part Numbering System

Part Marking System

U T G

SP3374N

TVS Diode Arrays

(SPA^®Diodes)

G= Green

T= Tape & Reel

bG4

Series

Package

μDFN-10 (3.0x2.0mm)

Speciﬁcations are subject to change without notice.

Revision: 06/07/16

TVS Diode Arrays (SPA^®Diodes)

Lightning Surge Protection - SP3374NUTG

Package Dimensions — µDFN-10 (3.0x2.0mm)

Package

JEDEC

µDFN-10 (3.0x2.0mm)

MO-229

Millimeters

Inches

Nom

Symbol

Min

Nom

Max

Min

Max

0.50

0.00

0.60

0.03

0.65

0.05

0.020

0.000

0.024

0.001

0.026

0.002

PIN1 INDICATOR

0.15 Ref

0.20

0.006 Ref

0.008

0.15

0.25

2.90

1.90

0.25

0.45

3.10

2.10

0.006

0.010

0.114

0.075

0.010

0.018

0.122

0.083

0.35

0.014

3.00

0.118

0.95mm

0.25mm

0.95mm

0.25mm

2.00

0.079

0.60 BSC

0.65 BSC

0.95 BSC

0.30

0.024 BSC

0.026 BSC

0.037

0.25

0.95

0.35

1.05

0.010

0.037

0.012

0.014

0.041

1.00

0.039

0.40mm

Notesꢀ:ꢀ

1. All dimensions are in millimeters

2. Dimensions include solder plating.

0.60mm 0.65mm 0.65mm 0.60mm

3. Dimensions are exclusive of mold ﬂash & metal burr.

Recommended Soldering Pads Layout

Recommended Stencil Apertures

4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.

5. Package surface matte ﬁnish VDI 11-13.

Recommended Stencil thickness 5mils

Tape & Reel Speciﬁcation — µDFN-10 (3.0x2.0mm)

Package

Symbol

µDFN-10 (3.0x2.0mm)

ø1.55 0.05

Device Orientation in Tape

Millimeters

2.30 +/- 0.10

3.20 +/- 0.10

1.75 +/- 0.10

3.50 +/- 0.05

1.0 +/- 0.10

Top

Cover

Tape

5° Max

4.00 +/- 0.10

2.00 +/- 0.10

0.3 +/- 0.05

Pin1 Location

ø1.0 0.1

8.00 +0.30/- 0.10

Speciﬁcations are subject to change without notice.

Revision: 06/07/16

SP3374NUTG [LITTELFUSE]

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