SMF13A-T13 [LITTELFUSE]
Trans Voltage Suppressor Diode, 200W, 13V V(RWM), Unidirectional, 1 Element, Silicon, SMF, 2 PIN;
| 型号： | SMF13A-T13 |
| 厂家： | 
LITTELFUSE |
| 描述： | Trans Voltage Suppressor Diode, 200W, 13V V(RWM), Unidirectional, 1 Element, Silicon, SMF, 2 PIN 局域网 光电二极管 |
| 文件： | 总6页 (文件大小：929K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransientVoltage Suppression Diodes
Surface Mount – 200W > SMF Series
Pb e3
RoHS
SMF Series
Description
Uni-directional
The SMF series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
SMF package is 50% smaller in footprint when compare
to SMA package and deliverying one of the low height
profiles (1.1mm) in the industry.
Features
• 200W peak pulsepower
capability at 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
•Compatible with
industrial standard
package SOD-123FL
• Low profile: maximum
height of 1.1mm.
• Low inductance, excellent
clamping capability
• For surface mounted
applications to optimize
board space
• High temperature
to reflow soldering
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Fast response time:
typically less than 1.0ns
from 0 Volts to VBR min
• Glass passivated junction
• Built-in strain relief
• Plastic package is
flammability rated
V-0 per Underwriters
Laboratories
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260°C
• Matte tin lead–free plated
• Halogen-free and RoHS
compliant
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings andThermal Characteristics
(TA=25OC unless otherwise noted)
Parameter
Symbol
PPPM
Value
200
Unit
W
Peak Pulse Power Dissipation at
TA=25ºC by 10/1000µs (Note 1)
Thermal Resistance Junction- to-
Ambient
RθJA
RθJL
TJ
220
°C/W
°C/W
°C
guaranteed: 260°C/40sec
Thermal Resistance Junction- to-
Lead
100
•Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
OperatingTemperature Range
StorageTemperature Range
-65 to 150
-65 to 175
TSTG
°C
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/ JEDEC J-STD-
609A.01)
Notes:
1. Non-repetitive current pulse, per Fig. 4 and derated aboveTJ (initial) =25ºC per Fig. 3.
30kV(Air), 30kV (Contact)
Applications
Functional Diagram
SMF devices are ideal for the protection of I/O interfaces,
CC bus and other vulnerable circuit used in cellular
phones, portable devices, business machines, power
supplies and other consumer applications.
V
Cathode
Anode
Uni-directional
Additional Infomarion
Datasꢀeet
Saꢀples
ꢀesourꢁes
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/06/17
TransientVoltage Suppression Diodes
Surface Mount – 200W > SMF Series
Electrical Characteristics (TA=25°C unless otherwise noted)
Breakdown
Voltage VBR
(Volts) @ IT
Test
Current
IT
Maximum
Reverse
Leakage @ VR
IR (µA)
Maximum
Peak Pulse
Maximum
Clamping
Agency
Approval
Part
Number
Marking
Code
Reverse Stand
off Voltage
VR (V)
Current Ipp Voltage @Ipp
(A)
VC (V)
(mA)
MIN
MAX
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A
SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
SMF54A
SMF58A
SMF60A
SMF64A
SMF70A
SMF75A
SMF78A
SMF85A
SMF90A
SMF100A
AE
AG
AK
AM
AP
AR
AT
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.00
11.10
7. 0 0
7.37
7.98
8.60
9.21
9.83
10.40
11.10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
400
400
250
100
50
25
10
5
21.7
19.4
17. 9
16.7
15.5
14.7
13.9
13.0
11.8
11.0
10.1
9.3
8.6
8.2
7. 7
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17. 0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
DE
RG
RK
RM
RP
RR
RT
12.30
13.50
14.70
15.90
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
49.10
52.80
55.30
58.90
62.70
66.30
71.20
73.70
78.60
86.00
92.10
95.80
104.00
111.00
123.00
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
12.20
13.30
14.40
15.60
16.70
17.80
18.90
20.0 0
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
44.40
47.80
50.00
53.30
56.70
60.00
64.40
66.70
71.10
77.80
83.30
86.70
94.40
100.00
111.00
11
12
13
14
15
16
17
7. 2
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
6.8
6.2
5.6
5.1
4.8
4.4
4.1
3.8
3.4
3.1
2.9
2.8
2.6
2.4
2.3
2.1
1.8
1.7
1.5
1.4
1.4
1.3
1.2
1.1
82.4
87.1
93.6
96.8
103.0
113.0
121.0
126.0
137.0
146.0
162.0
RV
RW
RX
Notes:
1. VBR measured after IT applied for 300µs, IT = square wave pulse or equivalent.
2. Surge current waveform per 10/1000µs exponential wave and derated per Fig.2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/06/17
TransientVoltage Suppression Diodes
Surface Mount – 200W > SMF Series
I-V Curve Characteristics
Uni-directional
Vc VBR
VR
V
IR
IT
VF
Ipp
PPPM Peak Pulse Power Dissipation -- Max power dissipation
VR Stand-off Voltage -- Maximum voltage that can be applied to theTVS without operation
VBR Breakdown Voltage -- Maximum voltage that flows though theTVS at a specified test current (IT)
VC Clamping Voltage -- Peak voltage measured across theTVS at a specified Ippm (peak impulse current)
IR Reverse Leakage Current -- Current measured at VR
VF Forward Voltage Drop for Uni-directional
Ratings and Characteristic Curves (TA=25°C unless otherwise noted)
Figure 1 -TVSTransients ClampingWaveform
Figure 2 - Peak Pulse Power Rating Curve
Voltage Transients
10
Voltage Across TVS
1
Current Through TVS
0.1
0.000001
0.00001
0.0001
0.001
td-Pulse Width (sec.)
Time
continues on next page.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/06/17
TransientVoltage Suppression Diodes
Surface Mount – 200W > SMF Series
Ratings and Characteristic Curves (TA=25°C unless otherwise noted) (Continued)
Figure 3 - Peak Pulse Power Derating Curve
Figure 4 - PulseWaveform - 10/1000µS
100
150
t =10µsec
r
T
=25°C
J
Pulse Width(td) is defined
as the point where the peak
80
60
40
20
0
current decays to 50% of I
PPM
Peak Value
I
100
PPM
Half Value
I
PPM
I
PPM
( )
2
50
0
10/1000µsec. Waveform
as defined by R.E.A
t
d
0
25
50
75
100
125 150
175
1.0
2.0
t-Time (ms)
3.0
4.0
0
TJ - Initial Junction Temperature (ºC)
Figure 6 -Typical Junction Capacitance
Figure 5 - ForwardVoltage
10000
0.9
0.8
0.7
0.6
0.5
0.4
0
1000
Measured@Vr=0v
Measured@50%Vr
100
-55
10
75
140
Temperature (ºC)
Figure 7 - Peak ForwardVoltage Drop vs.
Peak Forward Current
Figure 8 - Maximum Non-Repetitive Forward Surge
Current Uni-Directional Only
35
30
25
20
15
10
5
10
1
0.1
0.01
0
0
0.5
1
1.5
2
2.5
3
3.5
4
1
10
100
V
-Peak Forward Voltage(V)
F
Number of Cycles at 60 Hz
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/06/17
TransientVoltage Suppression Diodes
Surface Mount – 200W > SMF Series
Soldering Parameters
Lead–free
assembly
Reflow Condition
tp
TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
Critical Zone
T
to T
Pre Heat -Temperature Max (Ts(max)
)
200°C
L
P
TL
tL
-Time (min to max) (ts)
60 – 180 secs
Ts(max)
Average ramp up rate (LiquidusTemp (TA)
to peak
3°C/second max
Ramp-down
Ts(min)
ts
Preheat
TS(max) toTA - Ramp-up Rate
3°C/second max
217°C
-Temperature (TA) (Liquidus)
Reflow
25˚C
t 25˚C to Peak
-Time (min to max) (ts)
60 – 150 seconds
260+0/-5 °C
Time (t)
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
8 minutes Max.
260°C
Environmental Specifications
Time 25°C to peakTemperature (TP)
Do not exceed
HighTemp. Storage
JESD22-A103
JESD22-A108
JESD22-A104
HTRB
Physical Specifications
Temperature Cycling
SOD-123FL plastic over glass passivated
junction
Case
MSL
JEDEC-J-STD-020, Level 1
JESD22-A101
Color band denotes cathode except
bipolar
Polarity
Terminal
H3TRB
RSH
Matte tin-plated leads, solderable per
JESD22-B102
JESD22-A111
Dimensions - SOD-123FL Package
Millimeters
Min Max
2.50
Inches
Dimensions
Min
Max
A
B
C
D
E
F
2.90
3.90
1.20
2.00
0.90
0.26
0.10
1.10
0.0984
0.1339
0.0275
0.0591
0.0138
0.0020
0.000
0.1142
0.1535
0.0472
0.0787
0.0354
0.0102
0.0039
0.0433
3.40
0.70
1.50
0.35
0.05
0.00
0.95
F
C
D
G
H
0.0374
Mounting Pad Layout
1.3 (0.051)
1.6 (0.062)
1.4 (0.055)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/06/17
TransientVoltage Suppression Diodes
Surface Mount – 200W > SMF Series
Part Numbering System
Part Marking System
SMF xx A
Cathode Band
F
L
(for uni-directional products only)
XX
Marking Code
5% VBR VOLTAGETOLERANCE
YM
Trace Code Marking
Y:Year Code
M: Month Code
VR VOLTAGE
SERIES
Packaging Options
Component
Package
Packaging
Part number
SMFXXX
Quantity
3000
Packaging Option
Specification
SOD-123FL
SOD-123FL
Tape & Reel – 8mm tape/7” reel
Tape & Reel – 8mm tape/13” reel
EIA RS-481
EIA RS-481
SMFXXX-T13
10000
Tape and Reel Specification
0.157
(4.0)
Cathode
0.31
(8.0)
0.157
(4.0)
0.059
(1.5)
Cover tape
DIA
7.0 (178)
Dimensions are in inches
(and millimeters).
0.80 (20.2)
Arbor Hole Dia.
Direction of Feed
0.33
(8.5)
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/06/17
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