S1006D [LITTELFUSE]
Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-252AA, DPAK-3;型号: | S1006D |
厂家: | LITTELFUSE |
描述: | Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-252AA, DPAK-3 栅 栅极 |
文件: | 总6页 (文件大小:425K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
D-PAK
V-PAK
TO-252AA
TO-251AA
A
K
G
D-PAK SCRs
(6 – 12 Amps)
G11eneral Description
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Features
•
•
Surface mount package TO-252AA and through
hole TO-251AA
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Glass-passivated junctions ensure long device
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reliability and parameter stability
Voltage capability — up to 800 Volts
Surge capability — up to 120 Amps
•
•
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2001Teccor Electronics
http://www.teccor.com
- 1
+1 972-580-7777
Thyristor Product Catalog
Electrical Specifications
Part No.
VDRM &
VRRM
IT
IGT
IDRM & RRM
I
VTM
VGT
Surface Mount
Through Hole
Repetitive
Peak
Maximum
On-State
Current
DC Gate
Trigger
Peak
Peak Off-State
Current
DC Gate
On-State
Trigger Voltage
Blocking
Voltage
Current
D = 12VDC
RL = 60Ω
(8)
Voltage at
Max Rated
RMS Current
Gate Open
VDRM = Max
Rated Value
(5)
V
D = 12VDC
RL = 60Ω
(7)
V
(1)
TYPE
T
C = 25°C
Amps
mAmps
Volts
TO-252AA
D-PAK
TO-251AA
V-PAK
Non Isolated
TC
=
TC
=
TC
=
TC =
I
I
Volts
MIN
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
mAmps
MIN MAX
25°C
MAX
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
125°C
MAX
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Volts
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
125°C
MIN
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
25°C
MAX
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
T(RMS)
T(AV)
Non Isolated
S1006D
S2006D
S4006D
S6006D
S8006D
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
10
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
5.1
5.1
5.1
5.1
5.1
5.1
5.1
5.1
5.1
5.1
6.4
6.4
6.4
6.4
6.4
6.4
6.4
6.4
6.4
6.4
7.6
7.6
7.6
7.6
7.6
7.6
7.6
7.6
7.6
7.6
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
20
20
20
20
20
20
20
20
20
20
6 Amps
S1006V
S2006V
S4006V
S6006V
S8006V
S1008D
S2008D
S4008D
S6008D
S8008D
8 Amps
S1008V
S2008V
S4008V
S6008V
S8008V
S1010D
S2010D
S4010D
S6010D
S8010D
10
10
10
10 Amps
10
S1010V
S2010V
S4010V
S6010V
S8010V
10
10
10
10
10
S1012D
S2012D
S4012D
S6012D
S8012D
12
12
12
12
12 Amps
12
S1012V
S2012V
S4012V
S6012V
S8012V
12
12
12
12
12
http://www.teccor.com
- 2
2001Teccor Electronics
+1972-580-7777
Thyristor Product Catalog
IH
IGTM
PGM
PG(AV)
ITSM
tgt
tq
dv/dt
I2t
di/dt
Peak
One
Gate
Controlled
Turn-On
Peak
Gate
Holding
Current
Peak
Gate
Average
Gate
Critical Rate-of-
Applied Voltage
Circuit
Commulated
Turn-Off
Time
RMS Surge
(Non-
Cycle
Surge
(1) (6)
Maximum
Rate-of-
Power
Gate Open
Initial on State
Current =
200mA
Trigger
Current
(3)
Power
Time
Dissipation
Repetitive)
On-State
Current
Dissipation
Change of
On-State
Current
Gate
I
GT ≤ IGTM
Pulse=100mA
Min. Width=15µs
(2)
(3)
for Period of
8.3ms
(4)(9)
I
GT = 150mA
With 0.1µs
Rise Time
I
GT = 50mA
Amps
Volts/µSec
0.1µs
for Fusing
Rise Time
TC
=
mAmps
MAX
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
40
40
40
40
40
Amps
Watts
Watts
60Hz
50Hz
125°C
MIN
250
250
250
225
200
250
250
250
225
200
250
250
250
225
200
250
250
250
225
200
250
250
250
225
200
250
250
250
225
200
250
250
250
225
200
250
250
250
225
200
Amps2Sec
Amps/µSec
µSec
TYP
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
µSec
MAX
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
120
120
120
120
120
120
120
120
120
120
83
83
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
60
60
60
60
60
60
60
60
60
60
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
100
100
100
100
100
100
100
100
100
100
2001Teccor Electronics
http://www.teccor.com
- 3
+1 972-580-7777
Thyristor Product Catalog
Electrical Specifications
Electrical Specification Notes
General Notes
(1) See Figure 1.3 and 1.4 for current rating at specified operating
•
All measurements are made at 60Hz with a resistive load at an
ambient temperature of +25°C unless otherwise specified.
case temperature.
(2) Test conditions are as follows: I = 2A . Pulse duration = 50µs, dv/
T
•
•
•
Operating temperature range (T ) is -40°C to +125°C
J
dt = 20V/µs, di/dt = -30A/µS, I = 200mA at turn-on.
GT
Storage temperature range (T ) is -65°C to +150°C
S
(3) Pulse width ≤ 10µs.
(4) Initial on-state current = 200mA(DC)
Lead solder temperature is a maximum of 230°C for 10 seconds
maximum; 1/16" (1.59mm) from case.
(5)
(6) For more than one full cycle rating, see Figure 1.2
(7) See Figure 1.1 for V vs T
T = T for test conditions in off-state.
C J
•
The case temperature (T ) is measured as shown on dimensional
C
outline drawings. See mechanical specifications on page 5 of this
data sheet.
GT
C
(8) See Figure 1.6 for I vs T
GT
C
(9) See Figure 1.5 for I vs T
H
C
1.5
1.0
.5
130
120
110
100
90
8 AMP
80
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180º
CASE TEMPERATURE: Measure as
shown on dimensional drawings
70
60
0
50
-40
-15
+25
+65
+105 +125
0
2
4
6
8
10
12
RMS On-State Current [I
] - Amps
Case Temperature (T ) - ˚C
T(RMS)
C
Figure 1.1
Normalized DC Gate-Trigger Voltage vs
Case Temperature
Figure 1.3
Maximum Allowable Case Temperatrue vs
RMS On-State Current
1000
800
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: [I
Rated Value at Specified Case Temperature
]: Max-
600
500
T(RMS)
130
400
300
120
110
100
90
200
100
80
60
50
40
30
20
8
A
M
P
80
70
60
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180º
CASE TEMPERATURE: Measure as
shown on dimensional drawings
10
8
6
5
4
GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL.
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE.
3
50
2
1
4
6
8
2
0
Average On-State Current [I
] - Amps
T(AV)
1
2
3
4
5
6
7 8 10
20 30 40 60 80 100
200 300 400 600
1000
Surge Current Duration - Full Cycles
Figure 1.4
Maximum Allowable Case Temperatrue vs
Average On-State Current
Figure 1.2
Peak Surge Current vs Surge Current Duration
http://www.teccor.com
- 4
2001Teccor Electronics
+1972-580-7777
Thyristor Product Catalog
Mechanical Specifications
TO-252AA D-PAK Surface Mount
TO-251AA V-PAK Through Hole
INCHES
MILLIMETERS
INCHES
MILLIMETERS
DIM
A
B
C
D
E
MIN
MAX
MIN
MAX
DIM
A
B
C
D
E
MIN
MAX
MIN
MAX
.236
.244
6.00
6.20
.040
.050
1.02
6.00
8.89
5.21
6.38
0.69
2.21
2.18
0.46
0.91
0.46
1.27
.379
.176
.035
.087
.027
.205
.251
.040
.086
.026
.018
.170
.002
.018
.409
.184
.050
.093
.033
.213
.261
.050
.094
.036
.023
.180
.010
.023
9.63
4.47
0.89
2.21
0.69
5.21
6.38
1.02
2.18
0.66
0.46
4.32
0.05
0.46
10.39
4.67
1.27
2.36
0.84
5.41
6.63
1.27
2.39
0.91
0.58
4.57
0.25
0.58
.236
.350
.205
.251
.027
.087
.086
.018
.036
.018
.244
.375
.213
.261
.033
.093
.094
.023
.042
.023
6.20
9.53
5.41
6.63
0.84
2.36
2.39
0.58
1.07
0.58
F
F
G
H
J
G
H
J
K
L
K
L
M
N
O
P
2.0
1.5
1.0
.5
2.0
1.5
1.0
.5
INITIAL ON-STATE
CURRENT = 200 mA (DC)
FOR 6-12 AMP DEVICES
0
0
-40
-15
+25
+65
+105 +125
-40
-15
+25
+65
+105 +125
Case Temperature (T ) - ˚C
Case Temperature (T ) - ˚C
C
C
Figure 1.6
Normalized DC Gate - Trigger Current vs
Case Temperature
Figure 1.5
Normalized DC Holding Current vs Case Temperature
2001Teccor Electronics
http://www.teccor.com
- 5
+1 972-580-7777
Notes
TECCOR ELECTRONICS
1800 Hurd Drive
Irving, Texas 75038-4385
United States of America
Phone: +1 972-580-7777
Fax: +1 972-550-1309
Web site: http://www.teccor.com
E-mail: sidactor.techsales@teccor.com
Please contact the factory for further information.
Data Sheet: Preliminary D-Pak SCR 050901
An Invensys company
http://www.teccor.com
- 6
2001Teccor Electronics
+1972-580-7777
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