P4202ACL [LITTELFUSE]
Two-chip SIDACtor; 双芯片的SIDACtor
| 型号： | P4202ACL |
| 厂家： | 
LITTELFUSE |
| 描述： | Two-chip SIDACtor |
| 文件： | 总3页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Two-chip SIDACtor® Device
RoHS
The two-chip SIDACtor design provides a through-hole technology protection solution. It is
intended for telecom applications that do not require a balanced solution. For primary
protection applications, devices with higher holding current and integrated failsafe options
are available.
1
3
(T)
2
(G)
(R)
SIDACtor devices enable equipment to comply with various regulatory requirements
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A
(formerly known as FCC Part 68).
Electrical Parameters
V
V
V
V
S
DRM
S
DRM
Volts
Volts
Volts
Volts
Part
V
I
I
S
I
I
H
T
DRM
T
Number *
Pins 1-2, 3-2
Pins 1-3
Volts
µAmps
mAmps
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
mAmps
P0602A_L
P1402A_L
P1602A_L
P2202A_L
P2702A_L
P3002A_L
P3602A_L
P4202A_L
P4802A_L
P6002A_L
25
58
40
50
80
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
800
50
77
116
130
180
240
280
340
380
440
550
154
190
260
320
360
440
500
600
700
800
150
150
150
150
150
150
150
150
150
65
95
800
90
130
160
180
220
250
300
350
800
120
140
170
190
220
275
800
800
800
800
800
800
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For individual “AA”, “AB”, and “AC” surge ratings, see table below.
General Notes:
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
V
is measured at I
DRM.
is measured at 100 V/µs.
DRM
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
DRM H
S
Surge Ratings in Amps
I
PP
0.2x310 * 2x10 *
8x20 *
10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 *
I
TSM
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
di/dt
Amps/µs
500
Amps
20
Amps
150
Amps
150
Amps
90
Amps
50
Amps
75
Amps
75
Amps
45
Amps
75
Amps
20
A
B
C
25
250
250
150
200
100
150
100
200
125
175
80
100
200
30
500
50
500
400
100
50
500
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 45
www.littelfuse.com
Two-chip SIDACtor® Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
50
Unit
°C
T
J
Modified
TO-220
T
°C
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
PIN 1
PIN 3
PIN 2
Capacitance Values
pF
pF
Pin 1-2 / 3-2
Tip-Ground, Ring-Ground
Pin 1-3
Tip-Ring
Part Number
P0602AAL
P0602ABL
P0602ACL
P1402AAL
P1402ABL
P1402ACL
P1602AAL
P1602ABL
P1602ACL
P2202AAL
P2202ABL
P2202ACL
P2702AAL
P2702ABL
P2702ACL
P3002AAL
P3002ABL
P3002ACL
P3602AAL
P3602ABL
P3602ACL
P4202AAL
P4202ABL
P4202ACL
P4802AAL
P4802ABL
P4802ACL
P6002AAL
P6002ABL
P6002ACL
MIN
MAX
145
250
250
60
MIN
10
10
10
20
20
30
20
20
25
15
15
25
15
15
20
15
15
20
10
10
15
10
10
15
10
10
15
10
10
15
MAX
90
145
145
35
90
90
35
85
85
30
65
65
25
60
60
25
55
55
20
50
50
20
50
50
20
50
50
20
45
45
15
15
25
40
40
55
35
35
45
30
30
45
25
25
40
25
25
35
25
25
35
25
25
30
20
20
30
20
20
30
155
155
60
145
145
50
115
115
45
105
105
40
95
95
35
90
90
35
85
85
35
85
85
35
80
80
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.
O
www.littelfuse.com
3 - 46
© 2006 Littelfuse • Telecom Design Guide
Two-chip SIDACtor® Device
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
0
IS
IH
Waveform = tr x td
IDRM
-V
+V
Half Value
VDRM
VT
VS
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Waveform
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-40 -20
0
20 40 60 80 100 120 140 160
-8
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
Telecom Design Guide • © 2006 Littelfuse
3 - 47
www.littelfuse.com
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