P3406UB [LITTELFUSE]
Silicon Surge Protector, 30A, MODIFIED MS-013, SOIC-6;型号: | P3406UB |
厂家: | LITTELFUSE |
描述: | Silicon Surge Protector, 30A, MODIFIED MS-013, SOIC-6 双向触发二极管 |
文件: | 总3页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Multiport Balanced SIDACtor® Device
RoHS
¨
This six-pin SMT package offers a guaranteed balanced protection, based on a Littelfuse
patent (US Patent 4,905,119). The ‘Y’ configuration offers identical metallic and longitudinal
protection all in one package. SIDACtor devices enable equipment to comply with various
regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950,
UL 60950, and TIA-968-A (formerly known as FCC Part 68).
1
2
3
6
5
4
Electrical Parameters
V
V
S
V
DRM
V
S
DRM
Volts
Volts
Volt
Volts
Part
V
I
I
I
T
I
H
T
DRM
S
Number *
Pins 1-2, 2-3, 1-3
Pins 4-5, 5-6, 4-6
Volts
µAmps
mAmps
Amps
mAmps
P1556U_L
P1806U_L
P2106U_L
P2356U_L
P2706U_L
P3206U_L
P3406U_L
P5106U_L
130
150
170
200
230
270
300
420
180
210
250
270
300
350
400
600
130
150
170
200
230
270
300
420
180
210
250
270
300
350
400
600
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
V
Volts
V
Volts
V
DRM
Volt
V
S
Volts
DRM
S
Part
V
I
I
I
T
I
H
T
DRM
S
Number *
Pins 1-2, 2-3, 4-5, 5-6
Pins 4-6, 1-3
Volts
µAmps
mAmps
Amps
mAmps
A2106U_6L
A5030U_6L
170
400
250
550
50
80
3.5
5
5
800
2.2
120
270
340
3.5
800
2.2
150
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For individual “UA”, “UB”, and “UC” surge ratings, see table below.
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
V
is measured at I
DRM.
is measured at 100 V/µs.
DRM
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
DRM H
S
Device is designed to meet balance requirements of GTS 8700 and GR 974.
Surge Ratings in Amps
I
PP
0.2x310 * 2x10 *
8x20 *
10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 *
I
TSM
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
di/dt
Amps/µs
500
Amps
20
Amps
150
Amps
150
Amps
90
Amps
50
Amps
75
Amps
75
Amps
45
Amps
75
Amps
20
A
B
C
25
250
250
150
200
100
150
100
200
125
175
80
100
200
30
500
50
500
400
100
50
500
* Current waveform in µs
** Voltage waveform in µs
www.littelfuse.com
3 - 40
© 2006 Littelfuse • Telecom Design Guide
Multiport Balanced SIDACtor® Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +125
-65 to +150
60
Unit
°C
Modified MS-013
T
J
T
°C
S
6
5
4
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
1
2
3
Capacitance Values
pF
pF
Pin 1-2 / 3-2 (4-5 / 6-5)
Tip-Ground, Ring-Ground
Pin 1-3 (4-6)
Tip-Ring
Part Number
P1556UAL
P1556UBL
P1556UCL
P1806UAL
P1806UBL
P1806UCL
P2106UAL
P2106UBL
P2106UCL
P2356UAL
P2356UBL
P2356UCL
P2706UAL
P2706UBL
P2706UCL
P3206UAL
P3206UBL
P3206UCL
P3406UAL
P3406UBL
P3406UCL
P5106UAL
P5106UBL
P5106UCL
A2106UA6L
A2106UB6L
A2106UC6L
A5030UA6L
A5030UB6L
A5030UC6L
MIN
MAX
30
60
60
55
55
55
55
55
55
50
50
50
50
50
50
45
45
45
45
45
45
45
45
45
30
30
45
45
45
35
MIN
10
25
30
20
25
30
15
20
30
15
20
25
15
20
25
15
20
45
15
15
20
15
15
25
20
20
20
15
15
25
MAX
45
95
55
85
85
85
85
85
85
75
75
75
75
75
75
70
70
70
65
65
65
35
35
40
60
60
70
35
35
40
10
15
20
10
15
15
15
20
15
15
15
15
10
10
15
10
10
25
10
10
15
10
10
30
10
10
10
10
10
20
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.
O
Telecom Design Guide • © 2006 Littelfuse
3 - 41
www.littelfuse.com
Multiport Balanced SIDACtor® Device
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
100
50
0
Value
IS
IH
Waveform = tr x td
IDRM
-V
+V
Half Value
VDRM
VT
VS
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Waveform
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-40 -20
0
20 40 60 80 100 120 140 160
-8
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
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3 - 42
© 2006 Littelfuse • Telecom Design Guide
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