P0128SH10E [LITTELFUSE]
Silicon Controlled Rectifier,;
| 型号： | P0128SH10E |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总13页 (文件大小：1268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 20 Jun, 2019
Data Sheet Issue:- 1
Fast Turn-off Thyristor
Type P0128SH10# to P0128SH12#
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
1000-1200
V
V
V
V
1000-1200
1000-1200
1100-1300
MAXIMUM
LIMITS
128
OTHER RATINGS
UNITS
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
Maximum average on-state current, Tcase=55°C, (note 2)
Maximum average on-state current. Tcase=85°C, (note 2)
Nominal RMS on-state current, Tcase=25°C, (note 2)
D.C. on-state current, Tcase=25°C
A
A
83
260
A
206
A
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 3)
Peak non-repetitive surge tp=10ms, Vrm£10V, (note 3)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 3)
I2t capacity for fusing tp=10ms, Vrm£10V, (note 3)
Critical rate of rise of on-state current (repetitive), (Note 4)
Critical rate of rise of on-state current (non-repetitive), (Note 4)
Peak reverse gate voltage
1700
1950
19000
13700
500
A
ITSM2
I2t
A
A2s
A2s
A/µs
A/µs
V
I2t
(di/dt)cr
1000
5
VRGM
PG(AV)
PGM
Mean forward gate power
1.5
W
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Single phase; 50Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tj initial.
4) VD=67% VDRM, IFG=2A, tr£0.5µs, Tcase=125°C.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 1 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
VTM
VT0
rT
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
-
-
-
2.30 ITM=280A
2.60 ITM=384A
1.60
V
V
-
-
-
V
Slope resistance
-
-
2.49
mW
V/µs
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage
200
-
-
VD=80% VDRM, Linear ramp, Gate o/c
IDRM
IRRM
VGT
IGT
VGD
IH
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
-
-
-
-
-
20
Rated VDRM
Rated VRRM
-
20
-
3.0
200
Tj=25°C
VD=10V, IT=3A
Gate trigger current
-
mA
V
Gate non-trigger voltage
Holding current
-
0.25 Rated VDRM
600 Tj=25°C
1.0
-
mA
tgd
Gate controlled turn-on delay time
Turn-on time
0.4
0.8
50
25
15
3.0
VD=67% VDRM, ITM=500A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
tgt
-
-
-
-
-
2.0
Qrr
Qra
Irm
Recovered charge
-
45
-
µC
µC
A
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V
trr
-
µs
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
10
20
-
-
15
25
tq
Turn-off time (note 2)
µs
RthJ-C
RthJ-K
F
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Mounting torque
-
-
0.23 DC
0.08 DC
14.5
K/W
K/W
Nm
g
-
11.5
-
-
-
Wt
Weight
130
-
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 2 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
VRSM
V
1100
1300
VD VR
DC V
700
Voltage Grade
V
1000
1200
10
12
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 3 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
9.0 Frequency Ratings
The curves illustrated in figures 11 to 16 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn
off (tq) and for the off-state voltage to reach full value (tv), i.e.
1
f max =
tpulse+tq+tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
WAV = EP × f and TSINK (max.) =125 -
WAV × Rth
(
J -Hs
)
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150µs integration time i.e.
150µs
Qrr = irr .dt
ò
0
(iii)
t1
K Factor =
t2
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 4 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
TSINK (new) = TSINK (original) - E ×
k + f × Rth
(
J -Hs
)
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W =W(original) + E × f
(TOT)
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK
= TSINK
-
)
(
E × Rth × f
)
(
new
)
(
original
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
= Commutating source voltage
Vr
CS × di
R2 = 4×
Where: CS = Snubber capacitance
R
= Snubber resistance
dt
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 5 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
(ii)
the well established V0 and rs tangent used for rating purposes and
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A+ B×ln
(
IT + C × IT + D× IT
)
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
2.17025103
0.259583
2.93999×10-3
A
B
C
D
2.44502153
-0.3427962
1.10355×10-3
0.08830165
-0.0993591
16.2 D.C. Thermal Impedance Calculation
p=n
-t
æ
ö
t p
ç
p
÷
r = r × 1- e
å
t
ç
÷
p=1
è
ø
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
= Time Constant of rth term.
tp
D.C. Single Side Cooled
2
Term
rp
1
3
4
0.04349271
3.338537
0.09448932
0.850259
0.08616715
0.09835131
0.01286952
4.24×10-3
tp
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 6 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
1
P0128SH10#-12#
P0128SH10#-12#
Issue 1
Issue 1
SSC 0.23K/W
0.1
Tj = 125°C
Tj = 25°C
1000
0.01
0.001
100
0.0001
1E-05 0.0001 0.001 0.01
Time (Seconds)
1.5
2.5
3.5
4.5
5.5
6.5
0.1
1
10
100
Instantaneous on-state voltage - VT (V)
`
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
20
8
P0128SH10#-12#
P0128SH10#-12#
Issue 1
Issue 1
Tj=25°C
Tj=25°C
18
Max VG dc
16
14
12
10
6
Max VG dc
4
IGT, VGT
8
6
4
2
0
PG Max 30W dc
2
PG 1.5W dc
IGD, VGD
Min VG dc
Min VG dc
0.75
0
0
2
4
6
8
10
0
0.25
0.5
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 7 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
1000
1000
P0128SH10#-12#
P0128SH10#-12#
400A
300A
200A
100A
Issue 1
Issue 1
400A
Tj = 125°C
Tj = 125°C
300A
200A
100A
100
100
10
10
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
10
1000
P0128SH10#-12#
P0128SH10#-12#
Issue 1
Issue 1
Tj = 125°C
Tj = 125°C
400A
300A
200A
100A
100
400A
300A
200A
100A
1
10
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 8 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Figure 9 – Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
1.00E+01
100.00
P0128SH10#-12#
P0128SH10#-12#
Issue 1
Issue 1
Snubber value
Tj=125°C
= 0.25µF, 5W
Tj = 125°C
Vrm = 67% VRRM
1.00E+00
400A
300A
500A
400A
200A
10.00
300A
100A
1.00E-01
200A
100A
1.00E-02
1.00
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1
10
100
1000
Pulse width (s)
Commutation rate - di/dt (A/µs)
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+05
P0128SH10#-12#
Issue 1
P0128SH10#-12#
Issue 1
THs=55°C
THs=85°C
100% Duty Cycle
100A
200A
100% Duty Cycle
100A
200A
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E+04
1.00E+03
1.00E+02
1.00E+01
300A
400
300A
400A
500A
500A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (s)
Pulse width (s)
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 9 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
P0128SH10#-12#
P0128SH10#-12#
Issue 1
THs=55°C
Issue 1
THs=85°C
di/dt=100A/µs
di/dt=100A/µs
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
100A
100% Duty Cycle
100% Duty Cycle
1.00E+04
200A
300A
100A
400A
500A
200A
1.00E+03
1.00E+02
1.00E+01
300A
400A
500A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
P0128SH10#-12#
Issue 1
P0128SH10#-12#
Issue 1
di/dt=500A/µs
THs=85°C
di/dt=500A/µs
THs=55°C
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
100A
200A
100A
200A
300A
300A
400A
400A
500A
500A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 10 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E+02
1.00E+02
P0128SH10#-12#
P0128SH10#-12#
Issue 1
Issue 1
di/dt=100A/µs
Tj=125°C
di/dt=500A/µs
Tj=125°C
500A
500A
1.00E+01
1.00E+01
1.00E+00
1.00E-01
1.00E-02
400A
300A
400A
300A
1.00E+00
200A
100A
200A
100A
1.00E-01
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
10000
1000
100
1.00E+05
1.00E+04
1.00E+03
I2t: VRRM£10V
I2t: 60% VRRM
ITSM: VRRM£10V
ITSM: 60% VRRM
Tj (initial) = 125°C
50 100
1
3
5
10
1
5
10
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 11 of 12
June, 2019
WESTCODE
An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
P0128
S
H
¨ ¨
#
Fixed
Type Code
Fixed
Polarity Code
Fixed
Outline Code
Voltage Code
VDRM/100
10-12
tq Code
D=20µs, E=25µs
Typical order code: P0128SH10E – 1000V VDRM, VRRM, 25µs tq.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
IXYS Corporation
3540 Bassett Street
Westcode Semiconductors Inc
3270 Cherry Avenue
www.westcode.com
www.ixys.com
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.com
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 12 of 12
June, 2019
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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