IXTH30N50S [LITTELFUSE]
Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN;
| 型号： | IXTH30N50S |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
VDSS
ID25
RDS(on)
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N45 450 V 30 A 0.16 Ω
IXTH 30N50 500 V 30 A 0.17 Ω
TO-247 AD
Symbol
TestConditions
Maximum Ratings
D (TAB)
30N45
30N50
30N45
30N50
450
500
450
500
V
V
V
V
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
TO-247 SMD
( ...S )
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
30
120
A
A
C (TAB)
G
E
PD
TC = 25°C
360
W
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
*Add suffix letter "S" for TO-247 SMD
package option (EX:IXTH30N50S)
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Features
Md
1.13/10 Nm/lb.in.
• International standard package
JEDEC TO-247 AD
Weight
6
g
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
VDSS
VGS = 0 V, ID = 5 mA
30N50
30N45
500
450
V
V
%/k
• Switch-mode and resonant-mode
power supplies
BVDSS temperature coefficient
.087
• Motor control
• Uninterruptible Power Supplies (UPS)
• DC choppers
VGS(th)
VDS = VGS, ID = 250µA
VGS(th) temperature coefficient
2
4
V
%/k
-0.25
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = 0.8 • VDSS
GS = 0 V
TJ = 25°C
TJ = 125°C
200
3
µA
mA
Advantages
V
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
30N50
30N45
0.17
0.16
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
• High power density
© 1997 IXYS All rights reserved
94569D(5/97)
IXTH30N45 IXTH30N50
TO-247 AD Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
P
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS= 0 V, VDS = 25 V, f = 1 MHz
18
28
S
Ciss
Coss
Crss
5680
635
240
pF
pF
pF
td(on)
tr
td(off)
tf
35
42
110
26
ns
ns
ns
ns
VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 1 Ω, (External)
e
Dim.
Millimeter
Min.
Inches
Min. Max.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
Qgd
227
29
110
nC
nC
nC
VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.35 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.15
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
TO-247 SMD Outline
IS
VGS = 0
30
120
1.5
A
ISM
VSD
Repetitive; pulse width limited by TJM
A
V
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
850
ns
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
1.14
1.91
1.40
2.13
.045 .055
.075 .084
C
D
0.61
20.80
0.80
21.34
.024 .031
.819 .840
E
e
15.75
5.45
16.13
BSC
.620 .635
.215 BSC
L
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193 .201
.106 .114
.083 .091
L1
L2
L3
L4
.00
.004
.075 .083
ØP
Q
3.55
5.59
3.65
6.20
.140 .144
.220 .244
R
S
4.32
6.15
4.83
BSC
.170 .190
.242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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