IXFL82N60P [LITTELFUSE]

Power Field-Effect Transistor, 55A I(D), 600V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN;


型号：	IXFL82N60P
厂家：	LITTELFUSE
描述：	Power Field-Effect Transistor, 55A I(D), 600V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN 局域网开关脉冲晶体管
文件：	总6页 (文件大小：160K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 600V

I_D25= 55A

R_DS(on) 78m

IXFL82N60P

(Electrically Isolated Tab)

t_rr

 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

ISOPLUS264

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

600

V_DGR

Isolated Tab

= Drain

V_GSS

V_GSM

Continuous

Transient

30

40

G = Gate

S = Source

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

200

I_A

E_AS

T_C= 25C

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

Features

625

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

^Silicon Chip on Direct-Copper-Bond

Substrate

- High Power Dissipation

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



F_C

Mounting Force

40..120 / 9..27

N/lb.



V_ISOL

50/60 Hz, RMS t = 1 min

2500

3000



I_ISOL 1 mA

t = 1 s

Weight

Advantages



Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

AApplications

(T_J= 25C Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode



5.0



Power Supplies

AC Motor Control

High Speed Power Switching

Appliccation

200 nA



I_DSS

25 A

1 mA



T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 41A, Note 1

78 m

DS99531F(8/17)

IXFL82N60P

Symbol

Test Conditions

Characteristic Values

ISOPLUS264 (IXFL) OUTLINE

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 20V, I_D= 41A, Note 1

C_iss

C_oss

C_rss

1490

200

V_GS= 0V, V_DS= 25V, f = 1MHz

t_d(on)

Resistive Switching Times

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 41A

R_G= 1 (External)

t_r

t_d(off)

t_f

= Gate

2,4 = Drain

= Source

Q_g(on)

Q_gs

240

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 41A

Q_gd

R_thJC

R_thCS

0.20C/W

C/W

0.15

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

100

200

1.5

I_S

V_GS= 0V

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

t_rr

Q_RM

I_RM

200 ns

C

I_F= 25A, -di/dt = 100A/s

0.6

6.0

V_R= 100V, V_GS= 0V

Note

1. Pulse test, t  300s, duty cycle, d  2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,727,585

7,005,734 B2 7,157,338B2

7,063,975 B2

6,534,343

6,583,505

6,710,405 B2 6,759,692

6,710,463

6,771,478 B2 7,071,537

IXFL82N60P

Fig. 2. Extended Output Characteristics @ T_J= 25^oC

Fig. 1. Output Characteristics @ T_J= 25^oC

180

160

140

120

100

= 10V

0.5

1.5

2.5

3.5

4.5

5.5

150

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 41A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125^oC

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

= 10V

= 82A

= 41A

-50

-25

100

125

T_J- Degrees Centigrade

V_DS- Volts

Fig. 5. R_DS(on)Normalized to I_D= 41A Value vs.

Drain Current

Fig. 6. Maximum Drain Current vs. Case Temperature

3.2

2.8

2.4

= 10V

T = 125^oC

T = 25^oC

1.6

1.2

0.8

100

120

140

160

180

-50

-25

100

125

T_C- Degrees Centigrade

I_D- Amperes

IXFL82N60P

Fig. 8. Transconductance

Fig. 7. Input Admittance

160

140

120

100

120

100

= - 40^oC

= 125^oC

25^oC

- 40^oC

25^oC

125^oC

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

1.3

100

120

140

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode

Fig. 10. Gate Charge

250

200

150

100

= 300V

= 41A

= 10mA

= 125^oC

= 25^oC

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

100 120 140 160 180 200 220 240

Q_G- NanoCoulombs

V_SD- Volts

Fig. 12. Forward-Bias Safe Operating Area

Fig. 11. Capacitance

1,000

100

100,000

10,000

1,000

100

f = 1 MHz

Limit

DS(on)

iss

100μs

1ms

oss

10ms

T = 150^oC

= 25^oC

rss

Single Pulse

100

1000

V_DS- Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFL82N60P

Fig. 13. Maximum Transient Thermal Impedance

0.1

0.01

0.001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS REF: F_82N60P (9S) 2-01-06

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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

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