BTA25-600SW3G [LITTELFUSE]
Snubberless TRIAC,;
| 型号： | BTA25-600SW3G |
| 厂家： | 
LITTELFUSE |
| 描述： | Snubberless TRIAC, 三端双向交流开关 |
| 文件： | 总6页 (文件大小：466K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristors
Surface Mount – 800V > BTA25-600CW3G, BTA25-800CW3G
Pb
BTA25-600CW3G, BTA25-800CW3G
Description
Designed primarily for half-wave ac control applications,
such as motor controls, heating controls and power supply
crowbar circuits.
Features
• Blocking Voltage to 800 V
• On-State Current Rating
of 25 A RMS at 25°C
• Uniform GateTrigger
Currents inThree
Quadrants
• Industry StandardTO-
220AB Package
• High Commutating dI/
dt − 14 A/ms minimum at
125°C
• Internally Isolated (2500
VRMS
)
• High Immunity to dV/
dt − 500 V/µs minimum at
125°C
• These are Pb−Free
Devices and are RoHS
Compliant
• Minimizes Snubber
Networks for Protection
Pin Out
Functional Diagram
MT 2
MT 1
G
CASE 221A
STYLE 4
1
2
Additional Information
Samples
Datasheet
Resources
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/19
Thyristors
Surface Mount – 800V > BTA25-600CW3G, BTA25-800CW3G
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
VDRM
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
BTA25−600CW3G
BTA25−800CW3G
,
600
800
V
A
VRRM
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C)
IT
25
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25°C)
ITSM
250
260
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
A²sec
V
VDSM/ VRSM
+100
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/ VRSM
Peak Gate Current (TJ = 110°C, t ≤ 20μs)
Peak Gate Power (Pulse Width ≤ 20 µs, TC = 80°C)
Average Gate Power (TJ = 110°C)
IGM
PG(AV)
PG(AV)
TJ
4.0
20
W
W
W
°C
°C
V
1.0
Operating JunctionTemperature Range
StorageTemperature Range
-40 to +125
-40 to +125
2500
Tstg
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Unit
Junction−to−Case (AC)
Junction−to−Ambient
RƟJC
RƟJA
2.13
60
Thermal Resistance,
°C/W
Maximum LeadTemperature for Soldering Purposes, 1/8” from case for
10 seconds
TL
260
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
-
-
-
-
0.005
2.0
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM
IRRM
,
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
Forward On-State Voltage (Note 2) (ITM
=
22.5 A Peak)
VTM
−
−
1.55
V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
2.0
2.0
2.0
−
−
−
10
10
10
GateTrigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
IGT
IH
IL
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 500 mA)
−
−
20
mA
mA
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
−
−
−
−
−
25
30
25
1.3
1.3
1.3
−
Latching Current (VD = 12 V, IG = 12 mA)
GateTrigger Voltage (VD = 12 V, RL = 30 Ω)
−
−
0.5
0.5
0.5
0.2
0.2
0.2
VGT
V
V
Gate Non−Trigger Voltage (TJ = 110°C)
VGD
−
−
2. Indicates PulseTest: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/19
Thyristors
Surface Mount – 800V > BTA25-600CW3G, BTA25-800CW3G
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Rate of Change of Commutating Current, See Figure 10.
(Gate Open,TJ = 110°C, No Snubber)
(dI/dt)c
2.0
−
−
A/ms
Critical Rate of Rise of On−State Current
(TJ = 110°C, f = 120 Hz, IG = 20 mA, tr ≤100 ns)
dI/dt
−
−
−
50
−
A/µs
V/µs
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 110°C)
dV/dt
250
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM
IDRM
VRRM
IRRM
VTM
IH
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
+C urrent
Quadrant
Main Terminal 2
1
+
V
TM
on stat e
I
H
I
at V
RR M
RR M
Holding Current
+V oltage
DR M
off stat e
Quadrant Definitions for aTriac
I
I
at V
H
DR M
Quadrant
Main Terminal 2
3
V
TM
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT 2
(+) MT 2
Quadrant II
Quadrant I
(
) I
(+) I
GT
GT
GA TE
GA TE
MT 1
MT 1
RE F
RE F
I
+I
GT
GT
(
) MT 2
(
) MT 2
Quadrant III
Quadrant IV
(+) I
GT
(
) I
GT
GA TE
GA TE
MT 1
RE F
MT 1
RE F
MT2 NEGA TIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are used
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/19
Thyristors
Surface Mount – 800V > BTA25-600CW3G, BTA25-800CW3G
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
125
120
115
110
105
100
30
25
20
15
10
95
90
5
0
85
80
0
5
10
15
20
25
0
5
10
15
20
25
I , RMS ON-STATE CURRENT (A)
T(RMS)
I , ON-STATE CURRENT (A)
T(RMS)
Figure 3. On−State Characteristics
Figure 4.Thermal Response
1
0.1
0.01
4
0.1
1
10
100
1000
1· 10
t, TIME (ms)
Figure 5. Hold CurrentVariation
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/19
Thyristors
Surface Mount – 800V > BTA25-600CW3G, BTA25-800CW3G
Figure 6. GateTrigger CurrentVariation
Figure 7. GateTriggerVoltageVariation
Figure 8. Critical Rate of Rise of Off-StateVoltage
(ExponentialWaveform)
Figure 9. Latching CurrentVariation
Figure 10. SimplifiedTest Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/19
Thyristors
Surface Mount – 800V > BTA25-600CW3G, BTA25-800CW3G
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
C
T
S
BTA25-xCWG
YMAXX
4
3
Q
A
K
TO 220AB
CASE 221A
STYLE 12
12
U
1
2
H
3
Z
x
Y
=6 or 8
=Year
M =Month
R
L
A
=Assembly Site
XX =Lot Serial Code
V
G
J
G
=Pb-Free Package
D
N
Inches
Millimeters
Min
Pin Assignment
Dim
Min
0.590
0.380
0.178
0.025
0.142
0.095
0.110
0.018
0.540
0.060
0.195
0.105
0.085
0.045
0.235
0.000
0.045
---
Max
0.620
0.420
0.188
0.035
0.147
0.105
0.130
0.024
0.575
0.075
0.205
0.115
0.095
0.060
0.255
0.050
---
Max
15.75
10.67
4.78
0.89
3.73
2.67
3.30
0.61
14.61
1.91
5.21
2.92
2.41
1.52
6.47
1.27
---
1
2
3
4
MainTerminal 1
A
B
C
D
F
14.99
9.65
4.52
0.64
3.61
2.41
2.79
0.46
13.72
1.52
4.95
2.67
2.16
1.14
5.97
0.00
1.15
---
MainTerminal 2
Gate
No Connection
Ordering Information
G
H
J
Device
Package
Shipping
TO−220AB
(Pb−Free)
BTA25−600SW3G
500 Units / Rail
K
L
TO−220AB
(Pb−Free)
BTA25−800SW3G
500 Units / Rail
N
Q
R
S
T
U
V
Z
0.080
2.04
1. DIMENSIONING ANDTOLERANCING PER ANSIY14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/19
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