BTA08-800BW3G [LITTELFUSE]
Snubberless TRIAC, 800V V(DRM), 8A I(T)RMS, TO-220AB, LEAD FREE, CASE 221A-07, 3 PIN;
| 型号： | BTA08-800BW3G |
| 厂家： | 
LITTELFUSE |
| 描述： | Snubberless TRIAC, 800V V(DRM), 8A I(T)RMS, TO-220AB, LEAD FREE, CASE 221A-07, 3 PIN 局域网 PC 三端双向交流开关 |
| 文件： | 总7页 (文件大小：663K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Pb
RoHS
BTA08-600BW3G, BTA08-800BW3G
Description
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 8 A RMS at 80°C
• Uniform GateTrigger Currents inThree Quadrants
• High Immunity to dV/dt − 2000 V/s minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry StandardTO-220AB Package
• High Commutating dI/dt − 1.5 A/ms minimum at 125°C
• Internally Isolated (2500 VRMS
Pin Out
)
• These Devices are Pb−Free and are RoHS Compliant
Functional Diagram
TO 220AB
CASE 221A
STYLE 12
1
2
MT2
MT1
G
Additional Information
Samples
Datasheet
Resources
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Maximum Ratings † (TJ = 25°C unless otherwise noted)
Rating
Part Number
Symbol
Value
600
Unit
V
BTA08–600BW3G
VDRM,
VRRM
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
BTA08–800BW3G
800
8.0
On-State RMS Current
IT
A
(RMS)
(180° Conduction Angles;TC = 80°C)
Peak Non−Repetitive Surge Current
ITSM
90
36
A
(1/2 Cycle, Sine Wave, 60 Hz, TC = 80°C)
Circuit Fusing Considerations (t = 8.3 ms)
I2t
A2sec
VDSM,
VRSM
VDRM/VRRM
+100
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
V
Peak Gate Current (TJ = 125ºC, t = 20ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80ºC)
Average Gate Power (TJ = 125ºC)
IGM
PGM
PG(AV)
TJ
4.0
20
A
W
W
ºC
ºC
V
1.0
Operating JunctionTemperature Range
StorageTemperature Range
−40 to +125
−40 to +150
2500
Tstg
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25ºC)
Viso
† Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Maximum Ratings † (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case (AC)
°C/W
RΘ
2.5
JC
Thermal Resistance, Junction-to-Ambient
°C/W
°C
RΘ
63
JA
Maximum LeadTemperature for Soldering Purposes, 1/8” from
case for 10 seconds
TL
260
† Indicates JEDEC Registered Data
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Electrical Characteristics - OFF (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
-
-
0.005
TJ = 25°C
IDRM
,
Peak Repetitive Blocking Current
(VAK = VDRM = VRRM; Gate Open)
mA
IRRM
-
-
2.0
TJ = 125°C
Electrical Characteristics - ON
Characteristic
Symbol
VTM
Min
Typ
Max
Unit
Peak On-State Voltage (Note 2) (ITM
=
11 A Peak)
−
−
1.55
V
MT2(+), G(+)
2.5
2.5
2.5
−
−
−
50
50
50
MT2(+), G(−)
MT2(−), G(−)
GateTrigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
IGT
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 100 mA)
IH
IL
−
−
60
mA
mA
MT2(+), G(+)
MT2(+), G(−)
−
−
−
−
70
90
Latching Current (VD = 24 V, IG = 42 mA)
GateTrigger Voltage (VD = 12 V, RL = 30 Ω)
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
70
1.7
1.1
1.1
0.5
0.5
0.5
VGT
V
V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.2
0.2
0.2
−
−
−
−
−
−
tgt
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
(dl/dt)C
3.0
–
−
A/ms
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
dl/dt
−
−
–
50
−
A/µs
V/µs
Critical Rate−of−Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open,TJ = 125°C)
dv/dt(c)
1500
Voltage Current Characteristic of SCR
Symbol
VDRM
IDRM
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
I
I
VRRM
IRRM
I
VTM
IH
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
12
DC
10
180°
8
120°
6
4
60°
90°
α = 30°
2
0
I
, ON-STATE CURRENT (A)
T(RMS)
Figure 3. On−State Characteristics
Figure 4.Thermal Response
100
1
Typical @
Typical @ T
Typical @ T
= 25 ϒC
J
T
=
40 ϒC
J
= 125 ϒC
J
0.1
10
0.01
4
0.1
1
10
t, TIME (ms)
100
1000
1· 10
Figure 5. Holding CurrentVariation
1
Typical @ T
= 125 ϒC
J
Typical @ T
Typical @ T
= 25 ϒC
J
=
40 ϒC
J
0.1
00
.5
11
.5
22
.5
33
.5
44
.5
5
V , INSTANTANEOUS ON-STATE VOLTAGE (V)
T
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Typical Characteristics
Figure 6.Typical GateTrigger Current vs. PulseWidth
Figure 7. Typical GateTrigger Current vs. JunctionTemperature
Figure 8. Typical GateTriggerVoltage vs. JunctionTemperature
Figure 9. Typical Holding Current vs. JunctionTemperature
Figure 9. SimplifiedTest Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
L
1N4007
L
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
-
TRIGGER
200 V
CHARGE
+
MT2
1N914
51
MT1
G
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Dimensions
Part Marking System
SEATING
PLANE
B
F
C
T
S
4
3
TO 220AB
CASE 221A
STYLE 12
Q
A
K
1
2
12
U
H
Z
R
L
V
G
J
D
N
Inches
Millimeters
Min Max
Pin Assignment
Dim
Min
Max
1
2
3
4
MainTerminal 1
MainTerminal 2
Gate
A
B
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
C
MainTerminal 2
D
F
G
H
J
Ordering Information
Device
Package
Shipping
BTA08-600BW3G
K
L
TO-220AB
(Pb-Free)
50 Units / Retail
BTA08-800BW3G
N
Q
R
S
T
4.83
2.54
2.04
1.15
5.33
3.04
2.79
1.39
5.97
0.00
1.15
6.47
1.27
U
V
Z
−−−
2.04
0.080
−−−
1. DIMENSIONING ANDTOLERANCING PER ANSIY14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
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