B1201UC [LITTELFUSE]
Surge Protection Circuit, PDSO6, MS-013, 6 PIN;
| 型号： | B1201UC |
| 厂家： | 
LITTELFUSE |
| 描述： | Surge Protection Circuit, PDSO6, MS-013, 6 PIN 电信 光电二极管 电信集成电路 |
| 文件： | 总2页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Battrax Dual Negative SLIC Protector
Battrax Dual Negative SLIC Protector
This solid state Battrax protection device is referenced to a negative voltage source. Its
dual-chip package also includes internal diodes for transient protection from positive
surge events.
(G)
5
For a diagram of a Battrax application, see Figure 3.27.
1
2
3
(R)
(T) (-VREF
)
Electrical Parameters
Part
V
V
V
V
I
I
I
I
C
DRM
S
T
F
DRM
GT
T
H
O
Number *
Volts
Volts
Volts
Volts
µAmps
mAmps
100
Amps
mAmps
100
pF
50
50
50
B1101U_
B1161U_
B1201U_
|-V
|-V
|-V
| + |-1.2V|
| + |-1.2V|
| + |-1.2V|
|-V
|-V
|-V
| + |-10V|
| + |-10V|
| + |-10V|
4
4
4
5
5
5
5
5
5
1
1
1
REF
REF
REF
REF
REF
REF
100
100
160
200
* For individual “UA” and “UC” surge ratings, see table below.
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
I
I
is a repetitive surge rating and is guaranteed for the life of the product.
PP
PP
ratings assume a V
= -48 V.
REF
DRM.
V
V
is measured at I
DRM
is measured at 100 V/µs.
S
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.
V
maximum value for the B1101, B1161, and/or B1201 is -200 V.
REF
Surge Ratings
I
I
I
I
I
I
TSM
PP
PP
PP
PP
PP
2x10 µs
8x20 µs
10x160 µs
10x560 µs
10x1000 µs
60 Hz
Amps
di/dt
Series
Amps
Amps
Amps
Amps
Amps
Amps/µs
A
C
150
500
150
400
90
200
50
120
45
100
20
50
500
500
http://www.teccor.com
+1 972-580-7777
2 - 62
© 2003 Teccor Electronics
SIDACtor® Data Book and Design Guide
Battrax Dual Negative SLIC Protector
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +125
-65 to +150
60
Unit
°C
°C
Modified MS-013
T
J
6
5
4
T
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
1
2
3
+I
tr = rise time to peak value
td = decay time to half value
VF
Peak
Value
100
Waveform = tr x td
VDRM
VS
VT
-V
+V
50
0
Half Value
IDRM
IH
IS
tr
td
IT
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Wave-form
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-8
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
© 2003 Teccor Electronics
2 - 63
http://www.teccor.com
+1 972-580-7777
SIDACtor® Data Book and Design Guide
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