首页 |元器件品牌

0234010.MRET1P [LITTELFUSE]

Electric Fuse, Medium Blow, 10A, 250VAC, 200A (IR), Through Hole, 5x20mm, ROHS COMPLIANT;
0234010.MRET1P
型号： 0234010.MRET1P
厂家： LITTELFUSE    LITTELFUSE
描述：

Electric Fuse, Medium Blow, 10A, 250VAC, 200A (IR), Through Hole, 5x20mm, ROHS COMPLIANT

电路保护
文件： 总6页 (文件大小：307K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
TQM 7M4004  
(Preliminary data sheet)  
3V Dual-Band E-GSM/DCS Power Amplifier Module  
Description:  
Package Outline:  
Advanced dual-band, compact 3V power amplifier module  
designed for mobile handset applications. The small size  
and high performance is achieved with high-reliability  
InGaP HBT technology. The module is fully integrated,  
providing a simple 50 Ohms interface on all input and  
output ports. No external matching or bias components are  
required. Despite its very compact size, the module has  
exceptional efficiency in both bands. Band select and  
power control inputs on the module are CMOS compatible.  
Features:  
• Very compact size – 8×8×1.4 mm3.  
• High efficiency – typical E-GSM 55%, DCS  
50%.  
• Positive supply voltage – 3.2 to 4.8 V.  
• 50 Ω input and output impedances.  
• GPRS class 12 compatible.  
• CMOS band select and power control inputs.  
• High-reliability InGaP technology.  
• Ruggedness 10:1.  
• Few external components.  
Description:  
The module is a built around a highly integrated dual  
power amplifier InGaP die. By virtue of advanced design  
techniques, exceptional performance is achieved with only  
two stages in each amplifier. On-die interstage matching is  
employed using a high Q passives technology. Together  
these technologies allow an extremely compact size to be  
achieved with excellent electrical performance. The  
module includes a CMOS die to implement a band-select  
function and to provide a CMOS compatible input power  
control voltage range. The module construction is a low-  
profile overmolded land-grid array on laminate.  
Dimensions in mm  
Copyright © 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)  
All specifications subject to change without notice  
1
Absolute Maximum Ratings:  
Parameter  
Symbol  
Min.  
Max.  
Units  
Vcc  
Vdc  
Supply voltage  
-0.5  
6.0  
2.4  
2.0  
50  
Icc  
DC supply current  
A
V
%
ºC  
Vapc  
δ
Ta  
Power control voltage  
Duty cycle at max. power  
Operating case temperature  
-0.5  
-20  
-55  
85  
Ts  
Storage temperature  
150  
ºC  
Note: The amplifier will survive over the full range specified for any individual input, while  
other parameters are nominal and with no RF input.  
Operating Parameters:  
Parameter  
Supply voltage  
Symbol  
Min.  
3.2  
Typ.  
3.6  
1.6  
1
Max.  
4.8  
Units  
Vdc  
A
Vcc  
Icc  
Il  
DC supply current  
Leakage current  
Load impedances  
20  
µA  
Z0  
50  
Ω
Typical Performance:  
E-GSM Characteristics as a function of Vapc  
DCS Characteristics as a function of Vapc  
40.00  
60.00  
50.00  
40.00  
30.00  
20.00  
10.00  
0.00  
40  
30  
70.00  
60.00  
50.00  
40.00  
30.00  
20.00  
10.00  
0.00  
30.00  
20.00  
10.00  
0.00  
Pout  
Pout  
20  
Gain  
10  
Gain  
PAE  
0
PAE  
-10  
-20  
-30  
-40  
-10.00  
-20.00  
-30.00  
-40.00  
0.50  
1.00  
1.50  
2.00  
Vapc  
0.50  
1.00  
1.50  
2.00  
Vapc  
Copyright © 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)  
All specifications subject to change without notice  
2
E-GSM Electrical Characteristics:  
Test conditions (unless noted): Vcc = +3.6 V, Vapc = 1.8 V, Pin = 4 dBm, Duty Cycle =25%, Ta = 25ºC  
Parameter  
Frequency Range  
Symbol  
Min.  
880  
Typ.  
Max.  
915  
Units  
MHz  
Conditions  
f
Input Power for Pout max.  
Pin  
2.0  
4.0  
6.0  
dBm  
34.5  
35.0  
dBm  
Temp:  
-20ºC to  
+85ºC  
Pout  
Output Power  
Vcc = 3.2 V  
33.0  
34.0  
dBm  
Power Added Efficiency  
Power Control Voltage  
Power Control Current  
50  
55  
%
V
η
Vapc  
Iapc  
0.2  
1.8  
0.1  
mA  
Temp:  
-20ºC to  
+85ºC  
Pout/Vapc  
0 ≤ Pout ≤ 34.5 dBm  
-3 ≤ Pout ≤ 34.5 dBm  
Power Control Slope  
200  
dB/V  
dB  
Power Control Dynamic  
Range  
Input VSWR  
70  
2.0:1  
-35.0  
-16.0  
-7.0  
V
apc ≤ 0.2 V, Pin = - 5 dBm  
out ≤ 35.0 dBm  
Forward Isolation  
Iso  
Iso  
dBm  
dBm  
P
Cross-band Isolation  
2f0  
Temp:  
-20ºC to  
+85ºC  
P
out ≤ 34.5 dBm  
Harmonics  
3f0  
dBm  
-7.0  
> 3f0  
-7.0  
Rx noise power:  
925 - 935 MHz  
Rx noise power:  
935 - 960 MHz  
P
out ≤ 34.5 dBm, RBW = 100 kHz  
out ≤ 34.5 dBm, RBW = 100 kHz  
-72.0  
-84.0  
dBm  
dBm  
P
All phase angles,  
apc ≤ 1.8 V  
V
Stability  
8:1  
Pin = 4 dBm, Pout ≤ 35.0 dBm  
All phase angles,  
Vapc ≤ 1.8 V  
Ruggedness  
10:1  
Pin = 4 dBm, Pout ≤ 35.0 dBm  
Copyright © 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)  
All specifications subject to change without notice  
3
DCS Electrical Characteristics:  
Test conditions (unless noted): Vcc = +3.6 V, Vapc = 1.8 V, Pin = 4 dBm, Duty Cycle = 25%, Ta = 25ºC  
Parameter  
Frequency Range  
Symbol  
Min.  
1710  
Typ.  
Max.  
1785  
6.0  
Units  
Conditions  
f
MHz  
dBm  
dBm  
Input Power for Pout max.  
Pin  
2.0  
32.0  
4.0  
32.5  
Temp:  
-20ºC to  
+85ºC  
Pout  
Output Power  
Vcc = 3.2 V  
30.5  
31.0  
dBm  
Power Added Efficiency  
Power Control Voltage  
Power Control Current  
45  
50  
%
V
η
Vapc  
Iapc  
0.2  
1.8  
0.1  
mA  
Temp:  
-20ºC to  
+85ºC  
Pout/Vapc  
0 ≤ Pout ≤ 32.5 dBm  
-3 ≤ Pout ≤ 32 dBm  
Power Control Slope  
200  
dB/V  
dB  
Power Control Dynamic  
Range  
Input VSWR  
70  
3.0:1  
-32.0  
-7.0  
V
apc ≤ 0.2 V, Pin = - 5dBm  
Forward Isolation  
Iso  
2f0  
dBm  
Temp:  
-20ºC to  
+85ºC  
Pout ≤ 32 dBm  
Harmonics  
3f0  
dBm  
-7.0  
> 3f0  
-7.0  
Rx noise power:  
1805 - 1880 MHz  
P
out ≤ 32 dBm, RBW = 100 kHz  
-76.0  
dBm  
All phase angles,  
apc ≤ 1.8 V  
V
Stability  
8:1  
Pin = 4 dBm, Pout ≤ 32.5 dBm  
All phase angles,  
V
apc ≤ 1.8 V  
Ruggedness  
10:1  
Pin = 4 dBm, Pout ≤ 32.5 dBm  
Copyright © 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)  
All specifications subject to change without notice  
4
Pin Out:  
Top view  
Pin  
1
2
Symbol  
RFin - DCS  
Gnd.  
Description  
DCS power in  
Ground  
Vapc  
Gnd.  
Control voltage  
Ground  
3
4
Gnd.  
Ground  
5
Vbs  
Gnd.  
Band select voltage  
Ground  
6
7
RFin - E-GSM E-GSM power in  
Gnd. Ground  
8
9
Vcc1 - E-GSM E-GSM 1st stage input  
10  
11  
voltage  
Vcc2 - E-GSM E-GSM 2nd stage input  
voltage  
Gnd.  
Ground  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
RFout - E-GSM E-GSM power out  
Gnd.  
Gnd.  
Gnd.  
Gnd.  
Gnd.  
Ground  
Ground  
Ground  
Ground  
Ground  
Ground  
DCS power out  
Gnd.  
RFout - DCS  
Gnd.  
Vcc2 - DCS  
DCS 2nd stage input  
voltage  
22  
Vcc1 - DCS  
Gnd.  
DCS 1st stage input  
voltage  
Ground  
23  
24  
Copyright © 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)  
All specifications subject to change without notice  
5
Schematic:  
Copyright © 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)  
All specifications subject to change without notice  
6

相关型号：

0234010.MXE-

 234 Series, 5 x 20 mm, Medium-Acting Fuse
LITTELFUSE

0234010.MXEP

 234 Series, 5 x 20 mm, Medium-Acting Fuse
LITTELFUSE

0234010.MXP

 234 Series, 5 x 20 mm, Medium-Acting Fuse
LITTELFUSE

0234010.MXW

 Axial Lead and Cartridge Fuses - Designed to UL/CSA Standards
LITTELFUSE

0234010.MXW-

 Axial Lead and Cartridge Fuses - Designed to UL/CSA Standards
LITTELFUSE

0234010.MXW-ND

 Axial Lead and Cartridge Fuses - Designed to UL/CSA Standards
LITTELFUSE

0234010.XE

 Electric Fuse, Medium Blow, 10A, 250VAC, 200A (IR), Through Hole,
LITTELFUSE

0234010.XEP

 Electric Fuse, Medium Blow, 10A, 250VAC, 200A (IR), Through Hole, ROHS COMPLIANT
LITTELFUSE

0234010.XP

 暂无描述
LITTELFUSE

0234010.XW

 Axial Lead and Cartridge Fuses - Designed to UL/CSA Standards
LITTELFUSE

0234010XW

 Axial Lead and Cartridge Fuses - Designed to UL/CSA Standards
LITTELFUSE

023402.5

 5 x 20 mm Medium Acting Fuse 233/234 Series
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明