RH3845MK [Linear]
High Voltage Synchronous Step-Down Controller;
| 型号： | RH3845MK |
| 厂家： | 
Linear |
| 描述： | High Voltage Synchronous Step-Down Controller |
| 文件： | 总6页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DICE/DWF SPECIFICATION
RH3845MK
High Voltage Synchronous
Step-Down Controller
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Note 1)
The RH3845MK is a high voltage, synchronous, current
mode controller for medium to high power, high efficiency
supplies. It offers a wide 4V to 60V input range (7.5V
minimum start-up voltage). An onboard regulator sim-
plifies the biasing requirements by providing IC power
V ............................................................................65V
IN
BOOST ......................................................................80V
BOOST to SW............................................................24V
V , MODE................................................................24V
CC
+
+
–
SENSE , SENSE .......................................................40V
SENSE TO SENSE .................................................. 1V
SYNC, V , AND C ...................................................5V
directly from V .
IN
–
Additional features include an adjustable fixed operating
frequency synchronizable to an external clock for noise
sensitiveapplications,gatedriverscapableofdrivinglarge
N-channel MOSFETs, a precision undervoltage lockout,
low shutdown current, short-circuit protection, and a
programmable soft-start.
FB
SS
SHDN Pin Current....................................................1mA
Operating Junction Temperature Range...–55°C to 125°C
Storage Temperature Range................... –65°C to 150°C
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
DICE PINOUT
DIE CROSS REFERENCE
PAD FUNCTION
20
19
1
LTC® Finished
Order
1. VIN
2. SHDN
3. CSS
4. MODE
5. VFB
6. VC
7. SYNC
8. fSET
11. GND
12. SENSE–
13. SENSE+
14. PGND
15. BG
16. VCC
17. SW
18. TG
18
Part Number
Part Number
2
RH3845MK
RH3845MK
RH3845MK DICE
RH3845MK DWF*
17
16
Please refer to LTC standard product data sheet for
other applicable product information.
*DWF = DICE in wafer form.
3
4
15
5
14
9. GND
10. GND
19. BOOST
20. GND
6
7
13
10
8
11
9
12
113mils × 124mils,
Backside Metal: Alloyed Gold Layer
Backside Potential: GND
1
DICE/DWF SPECIFICATION
TABLE 1: DICE/DWF ELECTRICAL TEST LIMITS TA = 25°C
PARAMETER
CONDITIONS
MIN
MAX
7.5
4.0
200
100
2
UNITS
V
V
IN
V
IN
V
IN
V
IN
Minimum Start Voltage (Note 2)
UVLO Threshold (Falling)
Supply Current
3.6
V
V
V
> 9V
μA
μA
mA
mA
mA
V
CC
Shutdown Current
= 0.3V
SHDN
BOOST Supply Current (Note 3)
V
V
Supply Current
Current Limit
4.5
CC
CC
–40
1.30
100
SHDN Enable Threshold (Rising)
SHDN Hysteresis
1.4
150
1.250
50
mV
V
Reference Voltage
1.214
V
V
Input Bias Current
nA
ꢀS
ꢀA
ꢀA
mV
ꢀA
V
FB
FB
Error Amp Transconductance
350
35
Error Amp Sink/Source Current
MODE Pin Current (Note 4)
Peak Current Limit Sense Voltage
Soft-Start Charge Current
2
80
8
120
14
Sense Pins Common-Mode Range
Sense Pins Input Current
0
36
V
V
V
> 4V
400
120
12
ꢀA
mV
mV
kHz
kHz
SENSE(CM)
Reverse Protect Sense Voltage
Reverse Current Sense Voltage Offset
Switching Frequency
= 7.5V
MODE
MODE
= V
FB
R = 49.9k
T
270
100
350
500
Programmable Frequency Range
2
DICE/DWF SPECIFICATION
TABLE 2: ELECTRICAL CHARACTERISTICS (Pre-Irradiation)
T = 25°C
–55°C ≤ T ≥ 125°C
A
SUB-
SUB-
A
PARAMETER
CONDITIONS
GROUP
MIN
TYP
MAX
7.5
4.0
200
100
2
GROUP
MIN
TYP
MAX
UNITS
V
V
IN
V
IN
V
IN
V
IN
Minimum Start Voltage (Note 2)
UVLO Threshold (Falling)
Supply Current
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
7.5
4.0
800
200
3.5
4.5
3.6
3.8
130
65
3.6
3.8
V
V
V
> 9V
μA
μA
mA
mA
mA
V
CC
Shutdown Current
= 0.3V
SHDN
BOOST Supply Current (Note 3)
1.4
V
V
Supply Current
Current Limit
3.8
4.5
CC
CC
–40
1.30
100
–150
1.38
140
–40
1.30
100
SHDN Enable Threshold (Rising)
SHDN Hysteresis
1.5
150
1.250
50
1.5
180
mV
V
Reference Voltage
1.214
1.232
20
1.214
1.250
V
V
Input Bias Current
20
nA
ꢀS
ꢀA
mV
ꢀA
V
FB
FB
Error Amp Transconductance
350
35
90
8
450
50
340
20
85
8
540
Error Amp Sink/Source Current
Peak Current Limit Sense Voltage
Soft-Start Charge Current
Sense Pins Common-Mode Range
Sense Pins Input Current
Reverse Protect Sense Voltage
Reverse Current Sense Voltage Offset
Switching Frequency
105
12
120
16
125
16
0
36
0
36
V
V
V
> 4V
320
108
7
400
120
20
500
140
25
ꢀA
mV
mV
kHz
kHz
kHz
V
SENSE(CM)
= 7.5V
MODE
MODE
= V
FB
R = 49.9k
270
100
100
310
350
500
600
2
270
100
100
350
500
600
2
T
Programmable Frequency Range
External Sync Frequency Range
SYNC Voltage Threshold
Non-Overlap Time TG to BG
Non-Overlap Time BG to TG
TG Minimum On-Time
250
250
400
300
8.75
ns
ns
ns
TG Minimum Off-Time
ns
TG, BG Drive On Voltage
V
CC
= 10V
8
8
V
TG, BG Drive Off Voltage
0.1
0.1
V
TG, BG Drive Rise Time
C
C
= C = 3300pF
45
45
ns
TG
BG
TG, BG Drive Fall Time
= C = 3300pF
ns
TG
BG
3
DICE/DWF SPECIFICATION
TABLE 3: ELECTRICAL CHARACTERISTICS (Post-Irradiation)
10KRADS (Si) 20KRADS (Si) 50KRADS (Si) 100KRADS (Si) 200KRADS (Si)
PARAMETER
CONDITIONS
MIN MAX
MIN MAX MIN MAX
MIN
MAX
7.5
4
MIN
MAX
7.5
4
UNITS
V
V
IN
V
IN
V
IN
V
IN
Minimum Start Voltage (Note 2)
UVLO Threshold (Falling)
Supply Current
7.5
7.5
4
7.5
4
4
V
V
V
> 9V
200
200
100
2
200
100
2
200
100
2
200
100
2
μA
μA
mA
mA
mA
V
CC
Shutdown Current
= 0.3V
100
SHDN
BOOST Supply Current (Note 3)
2
4.5
V
CC
V
CC
Supply Current
Current Limit
4.5
4.5
4.5
4.5
–40
–40
1.30
100
–40
1.30
100
–40
1.30
100
–40
1.30
80
SHDN Enable Threshold (Rising)
SHDN Hysteresis
1.30
100
1.5
1.5
1.5
1.5
1.5
180
180
180
180
180
mV
V
Reference Voltage
1.214 1.250 1.210 1.246 1.208 1.244 1.204 1.240 1.187 1.223
V
V
Input Bias Current
50
100
120
250
350
nA
ꢀS
ꢀA
mV
ꢀA
V
FB
FB
Error Amp Transconductance
350
35
90
8
330
35
85
8
300
35
85
6
280
35
80
5
250
30
75
4
Error Amp Sink/Source Current
Peak Current Limit Sense Voltage
Soft-Start Charge Current
Sense Pins Common-Mode Range
Sense Pins Input Current
Reverse Protect Sense Voltage
Reverse Current Sense Voltage Offset
Switching Frequency
120
16
120
16
120
16
120
16
120
16
36
36
36
36
36
V
V
V
> 4V
400
120
10
400
120
10
400
120
10
400
120
10
400
120
10
ꢀA
mV
mV
kHz
kHz
ns
SENSE(CM)
= 7.5V
MODE
MODE
= V
FB
R = 49.9k
270
100
350
500
350
350
500
350
270
100
350
500
350
350
500
350
270
100
350
500
350
350
500
350
270
100
350
500
350
350
500
360
270
100
350
500
350
350
500
360
T
Programmable Frequency Range
Non-Overlap Time TG to BG
Non-Overlap Time BG to TG
TG Minimum On-Time
ns
ns
TG Minimum Off-Time
ns
TG, BG Drive On Voltage
V
CC
= 10V
8
8
8
8
8
V
TG, BG Drive Off Voltage
0.1
60
60
0.1
60
60
0.1
60
60
0.1
60
60
0.1
60
60
V
TG, BG Drive Rise Time
C
C
= C = 3300pF
ns
TG
BG
TG, BG Drive Fall Time
= C = 3300pF
ns
TG
BG
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability.
Note 3: Supply current specification does not include switch drive
currents. Actual supply currents will be higher.
Note 4: Connect the MODE pin to VFB for pulse-skipping mode or VCC
for forced continuous mode.
Note 2: VIN voltages below the start-up threshold (7.5V) are only
supported when the VCC is externally driven above 6.5V.
TABLE 4: ELECTRICAL TEST REQUIREMENTS
PDA Test Notes
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
1*, 2, 3
1, 2, 3
The PDA is specified as 5% based on failures from Group A, Subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of Group A, Subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in that
lot shall be used to determine the percent for the lot.
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group B and D for Class S,
End Point Electrical Parameters (Method 5005)
1, 2, 3
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
*PDA applies to subgroup 1. See PDA Test Notes.
4
DICE/DWF SPECIFICATION
TOTAL DOSE BIAS CIRCUIT — RUN MODE
R5
1k
R1
R8
V
BOOST
TG
IN
4.99k
750Ω
R6 200k
R7 200k
30V
3V
SHDN
R2
8.82k
C
SS
SW
R9
750Ω
MODE
V
CC
0.1ꢀF
0.1ꢀF
RH3845MK
R3
1k
V
FB
V
C
BG
20V
R10
750Ω
PGND
+
10V
SYNC
SENSE
R11
1.24k
–
f
SENSE
SET
R4
49.9k
GND
+
+
40V
5V
–
–
RH3845MK RUN MODE
TOTAL DOSE BIAS CIRCUIT — SHUTDOWN MODE
R4
1k
R7
V
BOOST
TG
IN
10k
R5 200k
R6 200k
R1
2k
30V
SHDN
2.5V
C
SS
SW
R8
10k
R2
2.49k
MODE
V
CC
RH3845MK
V
FB
V
C
BG
20V
R9
10k
0.1ꢀF
0.1ꢀF
PGND
+
10V
SYNC
SENSE
R10
10k
–
f
SENSE
SET
GND
R3
49.9k
+
+
40V
5V
–
–
RH3845MK SHDN MODE
BURN-IN CIRCUIT — RUN MODE
1k
1k
1W
V
GND
BOOST
TG
IN
100Ω
1k
SHDN
200k 499k
C
SS
4.87k
10V
1W
10V
1W
MODE
SW
RH3845MK
V
V
V
CC
FB
200k
BG
C
10V
1W
10V
1W
SYNC
PGND
+
f
SENSE
SET
–
10V
1W
10V
1W
GND
GND
SENSE
1k
+
10ꢀF
10V
+
3.3V
70V
–
–
GND
1ꢀF
150V
RH3845MK BURN IN-RUN
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
5
DICE/DWF SPECIFICATION
75V
1k
BURN-IN CIRCUIT — SHUTDOWN MODE
15V
1W
10k
V
GND
BOOST
TG
IN
20k
20k
SHDN
15V
1W
C
SS
MODE
SW
39.9k
RH3845MK
V
V
V
CC
FB
20V
1W
BG
C
SYNC
PGND
1k
+
40V
f
SENSE
SET
–
6.2V
5W
GND
GND
SENSE
0.1ꢀF
100V
10k
GND
RH3845MK BURN IN-SHDN
TYPICAL PERFORMANCE CHARACTERISTICS
Feedback Voltage Reference
Operating Switching Frequency
vs TID
VCC Supply Current vs TID
vs TID
1.4
1.3
1.2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
350
325
300
275
1.1
1.0
0.9
0.8
0.7
250
225
200
100
TOTAL DOSE (kRADS)
50
100
TOTAL DOSE (kRADS)
200
0
50
150
200
0
150
0
50
100
150
200
TOTAL DOSE (kRADS)
RH3845MK G01
RH3845MK G02
RH3845MK G03
Rad Hard die require special handling as compared to standard IC chips.
This wand can be made by pushing a small diameter Teflon tubing
onto the tip of a steel-tipped wand. The inside diameter of the Teflon
tip should match the die size for efficient pickup. The tip of the Teflon
should be cut square and flat to ensure good vacuum to die surface.
Ensure the Teflon tip remains clean from debris by inspecting under
stereoscope.
Rad Hard die are susceptible to surface damage because there is no
silicon nitride passivation as on standard die. Silicon nitride protects
the die surface from scratches by its hard and dense properties. The
passivation on Rad Hard die is silicon dioxide that is much “softer”
than silicon nitride.
During die attach, care must be exercised to ensure no tweezers touch
the top of the die.
LTC recommends that die handling be performed with extreme care so
as to protect the die surface from scratches. If the need arises to move
the die around from the chip tray, use a Teflon-tipped vacuum wand.
Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus
packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information
on dice performance and lot qualifications via lot sampling test procedures.
Dice data sheet subject to change. Please consult factory for current revision in production.
I.D.No. 66-13-3845
LT 0814 • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
6
●
●
© LINEAR TECHNOLOGY CORPORATION 2014
(408)432-1900 FAX: (408) 434-0507 www.linear.com
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