LSEG65062/S10-PF [LIGITEK]
BIPOLAR TYPE LED LAMPS; 双极型LED灯型号: | LSEG65062/S10-PF |
厂家: | LIGITEK ELECTRONICS CO., LTD. |
描述: | BIPOLAR TYPE LED LAMPS |
文件: | 总7页 (文件大小:140K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
BIPOLAR TYPE LED LAMPS
Pb
Lead-Free Parts
LSEG65062/S10-PF
DATA SHEET
LSEG65062/S10-PF
DOC. NO : QW0905-
REV.
: A
DATE
: 29 - Aug.- 2007
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/6
PART NO. LSEG65062/S10-PF
Package Dimensions
2.7
1.5
R1.38
4.0
1.0MAX
0.40TYP
0.45MAX
16.7±0.5
15.7±0.5
G
0.35TYP
SE
1.0MIN
1
2
2.0TYP
2
1
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
Directivity Radiation
LIGITEK ELECTRONICS CO.,LTD.
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Page
PART NO. LSEG65062/S10-PF
2/6
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SE
20
80
80
G
IF
30
Forward Current
mA
mA
mW
μA
℃
Peak Forward Current
Duty 1/10@10KHz
IFP
PD
120
100
Power Dissipation
Reverse Current @5V
Operating Temperature
Ir
10
Topr
-40 ~ +85
Tstg
Storage Temperature
-40 ~ +100
℃
Typical Electrical & Optical Characteristics (Ta=25 ℃)
Forward
voltage
@20mA(V) @10mA(mcd)
Luminous
intensity
Viewing
angle
2θ 1/2
(deg)
Peak Spectral
wave
halfwidth
△λnm
COLOR
length
PART NO MATERIAL
λPnm
Typ.
2.5
Emitted
Orange
Lens
Max.
Min. Min.
610
565
1.7 2.6 1.2
1.7 2.6 3.0
174
174
45
30
GaAsP/GaP
LSEG65062/S10-PF
White Diffused
Green
6.0
GaP
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
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Page
3/6
PART NO. LSEG65062/S10-PF
Typical Electro-Optical Characteristics Curve
SE CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
1000
100
10
3.0
2.5
2.0
1.5
1.0
1.0
0.1
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.4 Relative Intensity vs. Temperature
Fig.3 Forward Voltage vs. Temperature
3.0
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
700
750
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page4/6
PART NO. LSEG65062/S10-PF
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
3.0
2.5
2.0
1.5
1000
100
10
1.0
0.5
0.0
1.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
1.2
2.5
2.0
1.5
1.0
0.5
1.1
1.0
0.9
0.8
0.0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
1.0
0.5
0.0
500
550
600
650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSEG65062/S10-PF
Page 5/6
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One time only)
Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to body)
Temp(°C)
260°C3sec Max
260°
5°/sec
max
120°
2°/sec
25°
0°
max
0
50
150
Time(sec)
100
Preheat
60 Seconds Max
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSEG65062/S10-PF
Page
6/6
Reliability Test:
Reference
Description
Test Item
Test Condition
Standard
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hours.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105 ℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
Solderability Test
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