LSD1805-64V-XX [LIGITEK]
SINGLE DIGIT LED DISPLAY (1.8 Inch); 个位数LED显示屏（ 1.8英寸）
| 型号： | LSD1805-64V-XX |
| 厂家： | 
LIGITEK ELECTRONICS CO., LTD. |
| 描述： | SINGLE DIGIT LED DISPLAY (1.8 Inch) |
| 文件： | 总8页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
SINGLE DIGIT LED DISPLAY (1.8 Inch)
LSD1805/64V-XX
DATA SHEET
DOC. NO : QW0905-LSD1805/64V-XX
REV.
: A
DATE
: 09 - Jun. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LSD1805/64V-XX
Package Dimensions
37.8
(1.488")
10.8
(0.425")
55.8
(2.197")
48.26
(1.9")
44.8
(1.764")
ψ4.5
LSD1805/64V-XX
LIGITEK
7.3±0.5
ψ0.6
TYP
2.54X4=10.16(0.4")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO. LSD1805/64V-XX
Internal Circuit Diagram
LSD18054V-XX
1,5
F
A B
D E
DP
C
G
7 6 4 3
9 10 8
2
LSD18064V-XX
1,5
F
A B
D E
DP
C
G
7 6 4 3 2 9 10 8
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD1805/64V-XX
Page 3/7
Electrical Connection
PIN NO.
1
LSD18054V-XX
PIN NO.
1
LSD18064V-XX
Common Anode
Common Cathode
Cathode E
Anode E
Anode D
2
3
2
3
Cathode D
Cathode C
Common Anode
Cathode B
Cathode A
Cathode DP
Cathode F
Cathode G
Anode C
4
4
Common Cathode
5
5
Anode B
6
6
Anode A
7
7
Anode DP
8
8
Anode F
Anode G
9
9
10
10
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/7
PART NO. LSD1805/64V-XX
Absolute Maximum Ratings at Ta=25 ℃
Ratings
VR
Symbol
Parameter
UNIT
Forward Current Per Chip
IF
30
mA
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
100
IFP
Power Dissipation Per Chip
mW
PD
100
10
μA
Reverse Current Per Any Chip
Operating Temperature
Ir
Topr
Tstg
-25 ~ +85
-25 ~ +85
℃
℃
Storage Temperature
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
Electrical
common
cathode
or anode
CHIP
Material
λP △λ
Vf(v)
Typ.
Iv(mcd)
IV-M
2:1
PART NO
(nm)
(nm)
Typ.
Max. Min.
Emitted
Min.
Common
Cathode
LSD18054V-XX
LSD18064V-XX
4.5 5.4 7.2
GaAlAs
660
20
6.1 10.5
Red
Common
Anode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD1805/64V-XX
Page 5/7
Test Condition For Each Parameter
Symbol
Unit
volt
Test Condition
Parameter
Forward Voltage Per Chip
If=20mA
If=10mA
If=20mA
If=20mA
Vr=5V
Vf
Iv
Luminous Intensity Per Chip
Peak Wavelength
mcd
nm
λP
△λ
Ir
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
nm
μA
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD1805/64V-XX
Page6/7
Typical Electro-Optical Characteristics Curve
VR CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
1
0 1
1.0
2.0
3.0
4.0
5.0
1
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
1.2
3.0
2.5
2.0
1.1
1.0
0.9
0.8
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
100
-40 -20
0
20
40
60
80
100
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
700
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSD1805/64V-XX
Page 7/7
Reliability Test:
Reference
Standard
Description
Test Item
Test Condition
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
High Temperature
Storage Test
1.Ta=105℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hours.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
Solderability Test
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