SM5818 [LGE]
Surface Mount Schottky Barrier Rectifiers; 表面贴装肖特基二极管
| 型号： | SM5818 |
| 厂家： | 
LGE |
| 描述： | Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM5817-SM5819
Surface Mount Schottky Barrier Rectifiers
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
DO-213AB
Features
Metal-Semiconductor junction with guard ring
SOLDERABLE ENDS
＋0
－0.20
D2=D1
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
D2
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarityprotection applications
0.5± 0.1
0.5± 0.1
The plastic material carries U/L recognition 94V-0
4.9± 0.2
Mechanical Data
Case:JEDEC DO--213AB,molded plastic
Polarity: Color band denotes cathode
Weight: 0.0046 ounces,0.116 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SM5817
SM5818
SM5819
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS v oltage
20
14
20
30
21
30
40
28
40
V
V
V
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forw ard rectified current
@TA=90
1.0
A
IF(AV)
IFSM
VF
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
25
A
0.45
0.75
0.55
0.875
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
0.60
0.90
V
@ 3.0A
Maximum reverse current
@TA=25
@TA=100
1.0
mA
IR
at rated DC blocking voltage
10.0
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
110
CJ
pF
80
Rθ
/W
JA
Operating junction temperature range
- 55 ---- + 150
- 55 ---- + 150
TJ
Storage temperature range
TSTG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient,vertical PC board mounting,0.5"(12.7mm)lead length.
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SM5817-SM5819
Surface Mount Schottky Barrier Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD DERATING CURVE
FIG.2 -- PEAK FORWARD SURGE CURRENT
1.0
30
25
0.75
TJ
=T MAX
J
20
25
8.3ms Single Half
Sine-Wave
0.5
Resistive or
Inductive Load
10
5
0.375"(9.5mm)Lead
Length
0.25
0
0
1
10
100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
X -CHARACTERISTICS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
20
400
℃
TJ=25
10
SM5817
f=1.0MHz
Vsig=50mVp-p
SM5819
100
SM5818
1
TJ=25
Pulse width=300
1% Duty Cycle
s
10
.1
0.1
1
10
100
.2 .3
.4
.5
.6
.7
.8 .9
1.0 1.1 1.2
REVERSE VOLTAGE,VOLTS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
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mail:lge@luguang.cn
相关型号：
SM5818-W
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2
RECTRON
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