GBPC3501 [LGE]
Silicon Bridge Rectifiers; 硅桥式整流器
| 型号： | GBPC3501 |
| 厂家： | 
LGE |
| 描述： | Silicon Bridge Rectifiers |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBPC3500-GBPC3510
Silicon Bridge Rectifiers
PRV : 50 - 1000 Volts
Io : 35 Amperes
BR-35
0.728(18.50)
0.688(17.40)
Features
0.570(14.50)
0.530(13.40)
1.130(28.70)
1 120(28 40)
0.685(16.70)
0.618(15.70)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
0.197(5.00)
0.193(4.90)
0.658(16.70)
0.618(15.70)
0.028(0.71)
0.252(6.40)
0.248(6.30)
0.024(0.61)
0.094(2.40)
0.087(2.20)
φ
1.141 (29.0)
1.063 (27.0)
Mechanical Data
0.325 (8.25)
0.309 (7.85)
Case : Metal Case
Epoxy : UL94V-O rate flame retardant
Terminals : plated .25" (6.35 mm). Faston
Polarity : Polarity symbols marked on case
Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
Dimensions in inches and ( millimeters )
Weight : 15.6 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBPC GBPC GBPC GBPC GBPC GBPC GBPC
RATING
SYMBOL
UNIT
3500
3501
3502
3504
3506
3508
3510
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
100
200
400
600
800
1000
VRRM
VRMS
VDC
V
V
V
A
35
50
70
140
200
280
400
35
420
600
560
800
700
Maximum DC Blocking Voltage
100
1000
IF(AV)
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
400
IFSM
A
I2t
VF
A2S
V
660
Maximum Forward Voltage per Diode at IF = 17.5 A
1.1
10
200
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
μA
IR(H)
Ta = 100 °C
μA
1.5
°C/W
°C
RθJC
RθJA
TJ
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
10
- 40 to + 150
- 40 to + 150
°C
TSTG
°C
Note : (1) Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
http://www.luguang.cn
mail:lge@luguang.cn
GBPC3500-GBPC3510
Silicon Bridge Rectifiers
RATING AND CHARACTERISTIC CURVES ( KBPC3500 - KBPC3510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
42
35
600
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
500
TJ = 50 °C
400
28
21
14
300
200
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
7
0
(19cm x 9cm x 11.8cm)
Al.-Finned plate
100
0
1
4
6
10
20
40
60
100
2
0
25
50
75
100
125
150
175
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
10
TJ = 100 °C
1.0
10
Pulse Width = 300 μs
1 % Duty Cycle
0.1
1.0
TJ = 25 °C
TJ = 25 °C
0.01
0.1
0
20
40
60
80
100
120 140
PERCENT OF RATED
REVERSE VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
http://www.luguang.cn
mail:lge@luguang.cn
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