BY2000(G) [LGE]
暂无描述;型号: | BY2000(G) |
厂家: | LGE |
描述: | 暂无描述 |
文件: | 总2页 (文件大小:2390K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BY1600-BY2000
3.0 AMP. Silicon Rectifiers
DO-201AD
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
ꢀ
ꢀ
ꢀ
ꢀ
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C/10 seconds/.375”,(9.5mm) lead
Dimensions in inches and (millimeters)
lengths at 5 lbs., (2.3kg) tension
Weight: 1.2 grams
ꢀ
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
BY2000
Type Number
Symbol
VRRM
VRMS
VDC
BY1600
BY1800
1800
560
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
2000
910
V
V
V
1600
420
1800
2000
Maximum DC Blocking Voltage
1600
Maximum Average Forward Rectified
Current . 375 (9.5mm) Lead Length
I(AV)
3.0
A
o
@TA = 75 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
100
1.1
A
V
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
IR
o
uA
uA
Maximum DC Reverse Current @ TA=25 C
10.0
100
o
at Rated DC Blocking Voltage @ TA=125 C
Maximum Full Load Reverse Current, Full
Cycle Average .375”(9.5mm) Lead Length
@TL=75℃
HT
30
uA
IR
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Cj
RθJA
TJ
40
pF
o
40
C/W
o
-65 to +150
-65 to +150
C
o
Storage Temperature Range
TSTG
C
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
2. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
Notes:
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
BY1600-BY2000
3.0 AMP. Silicon Rectifiers
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT
DERATING CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
4
3
Tj=1250C
1
2
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
0.1
1
0
Tj=250C
0.01
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE. (oC)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
150
120
90
8.3ms Single Half Sine Wave
PER LEG. (JEDEC Method)
Tj=Tj max.
60
30
FIG.5- TYPICAL FORWARD
CHARACTERISTICS
100
0
0
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
30
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
50
3
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
1
Tj=250C
10
5
0.1
0.03
0.01
1
1
5
10
50
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
CARTON
SPQ/PCS
CARTON
SIZE/CM
CARTON
GW/KG
CARTON
NW/KG
PACKAGE
DO-27
SPQ/PCS
1250/AMMO
12500
40X26.5X30
14.00
12.00
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
相关型号:
BY203-12S-TAP
DIODE 0.25 A, 1200 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
VISHAY
BY203-12STR
Rectifier Diode, Avalanche, 1 Element, 0.25A, 1200V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY
BY203-16S-TAP
DIODE 0.25 A, 1600 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
VISHAY
BY203-16STAP
Rectifier Diode, Avalanche, 1 Element, 0.25A, 1600V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY
BY203-16STR
Rectifier Diode, Avalanche, 1 Element, 0.25A, 1600V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY
©2020 ICPDF网 联系我们和版权申明