BC857BWG [LGE]
PNP Silicon Epitaxial Planar Transistor;
| 型号： | BC857BWG |
| 厂家： | 
LGE |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总5页 (文件大小：1066K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
FEATURES
Pb
Lead-free
For AF input stages and driver applications.
High current gain.
Low collector-emitter saturation voltage.
Low noise between 30Hz and 15 kHz.
Complementary types:BC846W,BC847W,BC848W.
APPLICATIONS
General purpose switching and amplification application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
Package Code
BC856AW□/BC856BW□
BC857AW□/BC857BW□/BC857CW□
BC858AW□/BC858BW□/BC858CW□
3A/3B
3E/3F/3G
3J/3K/3L
SOT-323
SOT-323
SOT-323
□: none is for Lead Free package;
“G” is for Halogen Free package.
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
-80
-50
-30
-65
-45
-30
VCBO
V
Collector-Emitter Voltage
VCEO
V
VEBO
IC
Emitter-Base Voltage
Collector Current -Continuous
Peak Collector current
Peak Base current
-5
-100
V
mA
mA
mA
mW
℃
ICM
-200
IBM
-200
PC
Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-65 to +150
.
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Revision:20170701-P1
mail:lge@lgesemi.com
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
IC=-10μA,IE=0
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
-80
-50
-30
-65
-45
-30
Collector-base breakdown
voltage
V(BR)CBO
V
IC=-10mA,IB=0
Collector-emitter breakdown
voltage
V(BR)CEO
V
V
Emitter-base breakdown
voltage
V(BR)EBO
ICBO
IE=-1μA,IC=0
-5
Collector cut-off current
Emitter cut-off current
VCB=-30V,IE=0
-15
nA
μA
IEBO
VEB=-5V,IC=0
-0.1
VCE=-5V,IC=-10μA
BC856AW,BC857AW,BC858AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
140
250
480
DC current gain
hFE
VCE=-5V,IC=-2mA
BC856AW,BC857AW,BC858AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
125
220
420
180
290
520
250
475
800
Collector-emitter saturation
voltage
IC=-10mA, IB= -0.5mA
IC=-100mA, IB= -5mA
IC=-10mA, IB= -0.5mA
IC=-100mA, IB= -5mA
IC=-2mA, VCE=5V
-0.075 -0.3
-0.25 -0.65
-0.7
VCE(sat)
V
V
Base-emitter saturation voltage VBE(sat)
-0.85
-0.6
-0.75
Base-emitter voltage
VBE(on)
fT
V
MHz
pF
IC=-10mA, VCE=5V
-0.82
Transition frequency
VCE=-5V,IC=-20mA,f=100MHz
VCB=-10V,f=1MHz
250
Collector-base capacitance
Emitter-base capacitance
Ccb
3
5
Ceb
VEB=-0.5V,f=1MHz
10
15
pF
.
http://www.lgesemi.com
Revision:20170701-P2
mail:lge@lgesemi.com
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
http://www.lgesemi.com
Revision:20170701-P3
mail:lge@lgesemi.com
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
.
http://www.lgesemi.com
Revision:20170701-P4
mail:lge@lgesemi.com
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
C
A
Dim
Min
2.00
1.15
0.90
0.15
0.25
1.20
0.02
0.05
2.20
Max
2.20
1.35
1.10
0.35
0.40
1.40
0.10
0.15
2.40
A
B
C
D
E
D
J
G
H
J
G
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.65 0.65
1.90
0.90
0.70
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
3000/Tape&Reel
BC856W/BC857W/BC858W SOT-323
.
http://www.lgesemi.com
Revision:20170701-P5
mail:lge@lgesemi.com
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